n-channel t SC 5μs, T J(max) = 175 C V CE(on) typ. = 1.65V

Transcription

1 IRGP463DPbF IRGP463D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 C 5 μs short circuit SOA Square RBSOA G 1% of the parts tested for 4X rated current (I LM ) Positive V CE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C E n-channel V CES = 6V I C = 48A, T C = 1 C t SC 5μs, T J(max) = 175 C V CE(on) typ. = 1.65V Benefits High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to Low V CE (ON) and Low Switching losses Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI C G CE IRGP463DPbF G E C G IRGP463D-EPbF G C E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I T C = 25 C Continuous Collector Current 96 I T C = 1 C Continuous Collector Current 48 I CM Pulse Collector Current 2 I LM Clamped Inductive Load Current c 192 A I T C = 25 C Diode Continous Forward Current 96 I T C = 1 C Diode Continous Forward Current 48 I FM Diode Maximum Forward Current e 192 V GE Continuous Gate-to-Emitter Voltage ±2 V Transient Gate-to-Emitter Voltage ±3 P T C = 25 C Maximum Power Dissipation 33 W P T C = 1 C Maximum Power Dissipation 17 T J Operating Junction and -55 to +175 T STG Storage Temperature Range C Soldering Temperature, for 1 sec. 3 (.63 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 1 lbf in (1.1 N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT).45 C/W R θjc (Diode) Thermal Resistance Junction-to-Case-(each Diode).92 R θcs Thermal Resistance, Case-to-Sink (flat, greased surface).24 R θja Thermal Resistance, Junction-to-Ambient (typical socket mount) International Rectifier March 15, 213

2 IRGP463DPbF/IRGP463D-EPbF Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = 15μA f CT6 ΔV (BR)CES /ΔT J Temperature Coeff. of Breakdown Voltage.3 V/ C V GE = V, I C = 1mA (25 C-175 C) CT I C = 48A, V GE = 15V, T J = 25 C 5,6,7 V CE(on) Collector-to-Emitter Saturation Voltage 2. V I C = 48A, V GE = 15V, T J = 15 C 9,1, I C = 48A, V GE = 15V, T J = 175 C V GE(th) Gate Threshold Voltage V V CE = V GE, I C = 1.4mA 9, 1, ΔV GE(th) /ΔTJ Threshold Voltage temp. coefficient -21 mv/ C V CE = V GE, I C = 1.mA (25 C C) 11, 12 gfe Forward Transconductance 32 S V CE = 5V, I C = 48A, PW = 8μs I CES Collector-to-Emitter Leakage Current μa V GE = V, V CE = 6V 45 1 V GE = V, V CE = 6V, T J = 175 C V FM Diode Forward Voltage Drop V I F = 48A I F = 48A, T J = 175 C I GES Gate-to-Emitter Leakage Current ±1 na V GE = ±2V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig Q g Total Gate Charge (turn-on) I C = 48A 24 Q ge Gate-to-Emitter Charge (turn-on) nc V GE = 15V CT1 Q gc Gate-to-Collector Charge (turn-on) V CC = 4V E on Turn-On Switching Loss I C = 48A, V CC = 4V, V GE = 15V CT4 E off Turn-Off Switching Loss μj R G = 1Ω, L = 2μH, L S = 15nH, T J = 25 C E total Total Switching Loss Energy losses include tail & diode reverse recovery t d(on) Turn-On delay time 6 78 I C = 48A, V CC = 4V, V GE = 15V CT4 t r Rise time 4 56 ns R G = 1Ω, L = 2μH, L S = 15nH, T J = 25 C t d(off) Turn-Off delay time t f Fall time E on Turn-On Switching Loss 1625 I C = 48A, V CC = 4V, V GE =15V 13, 15 E off Turn-Off Switching Loss 1585 μj R G =1Ω, L=2μH, L S =15nH, T J = 175 C f CT4 E total Total Switching Loss 321 Energy losses include tail & diode reverse recovery WF1, WF2 t d(on) Turn-On delay time 55 I C = 48A, V CC = 4V, V GE = 15V 14, 16 t r Rise time 45 ns R G = 1Ω, L = 2μH, L S = 15nH CT4 t d(off) Turn-Off delay time 165 T J = 175 C WF1 t f Fall time 45 WF2 C ies Input Capacitance 325 pf V GE = V 23 C oes Output Capacitance 245 V CC = 3V C res Reverse Transfer Capacitance 9 f = 1.Mhz T J = 175 C, I C = 192A 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 48V, Vp =6V CT2 Rg = 1Ω, V GE = +15V to V SCSOA Short Circuit Safe Operating Area 5 μs V CC = 4V, Vp =6V 22, CT3 Rg = 1Ω, V GE = +15V to V Erec Reverse Recovery Energy of the Diode 845 μj T J = 175 C 17, 18, 19 t rr Diode Reverse Recovery Time 115 ns V CC = 4V, I F = 48A 2, 21 I rr Peak Reverse Recovery Current 4 A V GE = 15V, Rg = 1Ω, L =2μH, L s = 15nH WF3 WF4 Notes: V CC = 8% (V CES ), V GE = 2V, L = 2μH, R G = 1Ω. This is only applied to TO-247AC package. ƒ Pulse width limited by max. junction temperature. Refer to AN-186 for guidelines for measuring V (BR)CES safely International Rectifier March 15, 213

3 I CE (A) I CE (A) I C (A) I C (A) I C (A) P tot (W) IRGP463DPbF/IRGP463D-EPbF T C ( C) T C ( C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 1 1 Fig. 2 - Power Dissipation vs. Case Temperature 1 1μsec 1μsec 1 1 1msec 2 DC 1 Tc = 25 C Tj = 175 C Single Pulse Fig. 3 - Forward SOA T C = 25 C, T J 175 C; V GE =15V Fig. 4 - Reverse Bias SOA T J = 175 C; V GE =15V V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V Fig. 5 - Typ. IGBT Output Characteristics T J = -4 C; tp = 8μs Fig. 6 - Typ. IGBT Output Characteristics T J = 25 C; tp = 8μs International Rectifier March 15, 213

4 I CE (A) I CE (A) I F (A) IRGP463DPbF/IRGP463D-EPbF V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V c 25 C 175 C Fig. 7 - Typ. IGBT Output Characteristics T J = 175 C; tp = 8μs V F (V) Fig. 8 - Typ. Diode Forward Characteristics tp = 8μs I CE = 24A I CE = 48A I CE = 96A I CE = 24A I CE = 48A I CE = 96A V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = -4 C Fig. 1 - Typical V CE vs. V GE T J = 25 C T J = 25 C T J = 175 C I CE = 24A I CE = 48A I CE = 96A V GE (V) V GE (V) Fig Typical V CE vs. V GE T J = 175 C Fig Typ. Transfer Characteristics V CE = 5V; tp = 1μs International Rectifier March 15, 213

5 I RR (A) I RR (A) Energy (μj) Swiching Time (ns) Energy (μj) Swiching Time (ns) IRGP463DPbF/IRGP463D-EPbF E OFF td OFF 3 E ON 1 td ON 2 t F 1 t R I C (A) I C (A) Fig Typ. Energy Loss vs. I C T J = 175 C; L = 2μH; V CE = 4V, R G = 1Ω; V GE = 15V 5 Fig Typ. Switching Time vs. I C T J = 175 C; L = 2μH; V CE = 4V, R G = 1Ω; V GE = 15V E OFF td OFF 35 E ON t R td ON t F Rg (Ω) Fig Typ. Energy Loss vs. R G T J = 175 C; L = 2μH; V CE = 4V, I CE = 48A; V GE = 15V R G (Ω) Fig Typ. Switching Time vs. R G T J = 175 C; L = 2μH; V CE = 4V, I CE = 48A; V GE = 15V R G = 1Ω R G = 22Ω R G = 47Ω R G = 1Ω I F (A) R G (Ω) Fig Typ. Diode I RR vs. I F T J = 175 C Fig Typ. Diode I RR vs. R G T J = 175 C International Rectifier March 15, 213

6 Capacitance (pf) Energy (μj) Time (μs) I RR (A) Q RR (nc) V GE, Gate-to-Emitter Voltage (V) IRGP463DPbF/IRGP463D-EPbF A 1Ω 47Ω 48A 22Ω 24A 1Ω di F /dt (A/μs) Fig Typ. Diode I RR vs. di F /dt V CC = 4V; V GE = 15V; I F = 48A; T J = 175 C di F /dt (A/μs) Fig. 2 - Typ. Diode Q RR vs. di F /dt V CC = 4V; V GE = 15V; T J = 175 C R G = 1Ω R G = 22Ω R G = 47Ω Current (A) R G = 1Ω I F (A) Fig Typ. Diode E RR vs. I F T J = 175 C V GE (V) Fig V GE vs. Short Circuit Time V CC = 4V; T C = 25 C 16 Cies V CES = 3V V CES = 4V Coes 8 6 Cres Q G, Total Gate Charge (nc) Fig Typ. Capacitance vs. V CE Fig Typical Gate Charge vs. V GE V GE = V; f = 1MHz I CE = 48A; L = 6μH International Rectifier March 15, 213

7 IRGP463DPbF/IRGP463D-EPbF 1 Thermal Response ( Z thjc ) D = SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri Ri ( C/W) τi (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E t 1, Rectangular Pulse Duration (sec) τ C τ Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1 Thermal Response ( Z thjc ) D = R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri Ri ( C/W) τi (sec) SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E t 1, Rectangular Pulse Duration (sec) τ C τ Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) International Rectifier March 15, 213

8 IRGP463DPbF/IRGP463D-EPbF L L 1K VCC 8 V + - Rg VCC Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / 4X L DC VCC -5V Rg / DRIVER VCC R SH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R = VCC ICM 1K Rg VCC G force D1 22K.75μF C sense E sense Fig.C.T.5 - Resistive Load Circuit E force Fig.C.T.6 - BVCES Filter Circuit International Rectifier March 15, 213

9 IRGP463DPbF/IRGP463D-EPbF tr TEST CURRENT 8 VCE (V) tf 5% V CE 9% I CE ICE (A) VCE (V) % test 1% test current 5% V CE ICE (A) 5% I CE -1 E OFF Loss Time(μs) Fig. WF1 - Typ. Turn-off Loss T J = 175 C using Fig. CT.4-2 E ON Time (μs) Fig. WF2 - Typ. Turn-on Loss T J = 175 C using Fig. CT Q RR 5 4 V CE I CE 5 4 IRR(A) 2 1 t RR VCE (V) ICE (A) Peak I RR 1% Peak I RR time (μs) Fig. WF3 - Typ. Diode Recovery T J = 175 C using Fig. CT time (μs) Fig. WF4 - Typ. S.C. T J = 25 C using Fig. CT International Rectifier March 15, 213

10 IRGP463DPbF/IRGP463D-EPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE3 WIT H AS S EMBLY LOT CODE 5657 AS S EMBLE D ON WW 35, 21 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASS EMBLY LOT CODE IRFPE3 135H PART NUMBER DATE CODE YEAR 1 = 21 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at International Rectifier March 15, 213

11 IRGP463DPbF/IRGP463D-EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X AM P L E : T H IS IS AN IR G P 3 B 12 K D -E WITH ASSEMBLY LOT CODE 5657 AS SEMB LED ON WW 35, 2 IN T H E AS S E M B L Y L IN E "H " N ote: "P " in as s em bly line pos ition indicates "Lead-F ree" PART NUMBER IN T E R N AT IO N AL R E C T IF IE R LOGO 35H DATE CODE ASSEMBLY YEAR = 2 LOT CODE WEEK 35 LINE H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 11 N. Sepulveda Blvd.., El Segundo, California 9245, USA Tel: (31) TAC Fax: (31) Visit us at for sales contact information International Rectifier March 15, 213