Optocoupler, Phototransistor Output, with Base Connection
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1 CNY7 Optocoupler, Phototransistor FEATURES Isolation test voltage 5 V RMS A 6 B Long term stability i79 C NC 5 C E Industry standard dual-in-line package Lead (Pb-free component Component in accordance to RoHS /95/EC and WEEE /96/EC DESCRIPTION The CNY7 is an optically coupled pair consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon NPN phototransitor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The CNY7 can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation. AGENCY APPROVALS Underwriters lab file no. E57 system code H or J DIN EN (VDE 88 BSI IEC 695, IEC 665 FIMKO ORDER INFORMATION PART REMARKS CNY7- CTR % to 8 %, DIP-6 CNY7- CTR 6 % to 5 %, DIP-6 CNY7- CTR % to %, DIP-6 CNY7- CTR 6 % to %, DIP-6 CNY7-X6 CTR % to 8 %, DIP-6 mil (option 6 CNY7-X7 CTR % to 8 %, SMD-6 (option 7 CNY7-X9 CTR % to 8 %, SMD-6 (option 9 CNY7-X6 CTR 6 % to 5 %, DIP-6 mil (option 6 CNY7-X7 CTR 6 % to 5 %, SMD-6 (option 7 CNY7-X9 CTR 6 % to 5 %, SMD-6 (option 9 CNY7-X6 CTR % to %, DIP-6 mil (option 6 CNY7-X7 CTR % to %, SMD-6 (option 7 CNY7-X9 CTR % to %, SMD-6 (option 9 CNY7-X6 CTR 6 % to %, DIP-6 mil (option 6 CNY7-X7 CTR 6 % to %, SMD-6 (option 7 CNY7-X9 CTR 6 % to %, SMD-6 (option 9 Note For additional information on the available options refer to option information. ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 6 V Forward current 6 ma Surge current t µs SM.5 A Power dissipation P diss mw For technical questions, contact: Document Number: 866 Rev..6, -Dec-5
2 Optocoupler, Phototransistor CNY7 ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT OUTPUT Collector emitter breakdown voltage BV CEO 7 V Emitter base breakdown voltage BV EBO 7 V Collector current 5 ma t <. ms ma Power dissipation P diss 5 mw COUPLER Isolation test voltage between emitter and detector t = s V ISO 5 V RMS Creepage distance 7 mm Clearance distance 7 mm Isolation thickness between emitter and detector. mm Comparative tracking index per DIN IEC /VDE, part 75 Isolation resistance V IO = 5 V, T amb = 5 C R IO Ω V IO = 5 V, T amb = C R IO Ω Storage temperature T stg - 55 to + 5 C Operating temperature T amb - 55 to + C Soldering temperature max. s, dip soldering: distance to seating plane.5 mm T sld 6 C Note T amb = 5 C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage = 6 ma V F.5.65 V Breakdown voltage I R = ma V BR 6 V Reverse current V R = 6 V I R. µa Capacitance V R = V, f = MHz C O 5 pf Thermal resistance R th 75 K/W OUTPUT Collector emitter capacitance V CE = 5 V, f = MHz C CE 5. pf Collector base capacitance V CB = 5 V, f = MHz C CB 6.5 pf Emitter base capacitance V EB = 5 V, f = MHz C EB 7.5 pf Thermal resistance R th 5 K/W COUPLER Collector emitter, saturation voltage V F = ma, =.5 ma V CEsat.5. V Coupling capacitance C C.6 pf Collector emitter, leakage current V CE = V CNY7- EO 5 na CNY7- EO 5 na CNY7- EO 5 na CNY7- EO 5 na Note T amb = 5 C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. Document Number: 866 For technical questions, contact: Rev..6, -Dec-5 5
3 CNY7 Optocoupler, Phototransistor CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT / V CE = 5 V, = ma V CE = 5 V, = ma Note Current transfer ratio and collector-emitter leakage current by dash number (T amb C. CNY7- CTR 8 % CNY7- CTR 6 5 % CNY7- CTR % CNY7- CTR 6 % CNY7- CTR % CNY7- CTR 5 % CNY7- CTR 7 % CNY7- CTR 56 9 % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT LINEAR OPERATION (without saturation Turn-on time = ma, V CC = 5 V, R L = 75 Ω t on µs Rise time = ma, V CC = 5 V, R L = 75 Ω t r µs Turn-off time = ma, V CC = 5 V, R L = 75 Ω t off. µs Fall time = ma, V CC = 5 V, R L = 75 Ω t f µs Cut-off frequency = ma, V CC = 5 V, R L = 75 Ω f CO 5 khz SWITCHING OPERATION (with saturation = ma CNY7- t on µs Turn-on time = ma CNY7- t on. µs CNY7- t on. µs = 5 ma CNY7- t on 6 µs = ma CNY7- t r µs Rise time = ma CNY7- t r µs CNY7- t r µs = 5 ma CNY7- t r.6 µs = ma CNY7- t off 8 µs Turn-off time = ma CNY7- t off µs CNY7- t off µs = 5 ma CNY7- t off 5 µs = ma CNY7- t f µs Fall time = ma CNY7- t f µs CNY7- t f µs = 5 ma CNY7- t f 5 µs For technical questions, contact: Document Number: Rev..6, -Dec-5
4 Optocoupler, Phototransistor CNY7 TYPICAL CHARACTERISTICS T amb = 5 C, unless otherwise specified 7 Ω R L = 75 Ω V CC = 5 V (% = C, V CE = 5 V / = f ( icny7_ icny7_. (ma Fig. - Linear Operation (without Saturation Fig. - Current Transfer Ratio vs. Diode Current kω V CC = 5 V (% = 5 C, V CE = 5 V / = f ( 7 Ω icny7_ icny7_5. (ma Fig. - Switching Operation (with Saturation Fig. 5 - Current Transfer Ratio vs. Diode Current = - 5 C, V CE = 5 V / = f ( = 5 C, V CE = 5 V / = f ( (% (% icny7_. (ma icny7_6. (ma Fig. - Current Transfer Ratio vs. Diode Current Fig. 6 - Current Transfer Ratio vs. Diode Current Document Number: 866 For technical questions, contact: Rev..6, -Dec-5 7
5 CNY7 Optocoupler, Phototransistor (% = 75 C, V CE = 5 V / = f ( = f (V CE = ma = ma = ma = 7 ma = 5 ma icny7_7. (ma Fig. 7 - Current Transfer Ratio vs. Diode Current = ma = ma 5 5 icny7_ V CE (V Fig. - Output Characteristics (% ( = ma, V CE = 5 V / = f (T V F (V... V F = f ( 5 C 5 C 75 C icny7_ T A ( C Fig. 8 - Current Transfer Ratio (CTR vs. Temperature.9. (ma icny7_ Fig. - Forward Voltage (ma icny7_9 = f (V CE = 5 5 V CE (V Fig. 9 - Transistor Characteristics = µa = µa = 5 µa = µa = 5 µa = µa EO (µa.. EO = f (V,T ( = V CE = 5 V V CE = V C TA icny7_ Fig. - Collector Emitter Off-state Current For technical questions, contact: Document Number: Rev..6, -Dec-5
6 Optocoupler, Phototransistor CNY7 V CE sat..9 V CEsat = f (.8.7 = x icny7_ (ma Fig. - Saturation Voltage vs. Collector Current and Modulation Depth CNY7- V CE sat (V..9.8 V CEsat = f (.7.6 = = x = x icny7_6 (ma Fig. 6 - Saturation Voltage vs. Collector Current and Modulation Depth CNY7- V CE sat (V..9 V CEsat = f ( = x.. = x.. icny7_ (ma Fig. - Saturation Voltage vs. Collector Current and Modulation Depth CNY7- P tot (mw 5 5 icny7_8 P tot = f Transistor Diode T A ( C Fig. 7 - Permissible Power Dissipation for Transistor and Diode V CE sat (V..9 V CEsat = f (.8.7 = = x.. I F = x icny7_5 (ma Fig. 5 - Saturation Voltage vs. Collector Current and Modulation Depth CNY7- Document Number: 866 For technical questions, contact: Rev..6, -Dec-5 9
7 CNY7 Optocoupler, Phototransistor PACKAGE DIMENSIONS in inches (millimeters Pin one ID.8 (6..56 ( ISO method A.5 (8.5. (8.7.9 (. min..8 (.5. (.55. (.. (7.6 typ..5 (.8 i78 typ..8 (.5. (.55. (.8 min.. (.8.5 (.9. (.5 typ. to 9 8. (.5 typ.. to.7 (7.6 to 8.8. (.9. (. Option 6 Option 7 Option 9.7 (.6.9 ( (7.8.9 (7.. (7.6 typ..75 ( (.. (7.6 ref.. (.5. (.5. (.6. (.9.8 (.7.5 (8. min.. (8. min..6 (. max..8(.6.6 (.. (..98 (.9. (.5. (..5 (8. min.. (. typ. 5 max For technical questions, contact: Document Number: 866 Rev..6, -Dec-5
8 Optocoupler, Phototransistor CNY7 OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to. Meet all present and future national and international statutory requirements.. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs. The Montreal Protocol (987 and its London Amendments (99 intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.. Class I and II ozone depleting substances in the Clean Air Act Amendments of 99 by the Environmental Protection Agency (EPA in the USA. Council Decision 88/5/EEC and 9/69/EEC Annex A, B and C (transitional substances respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 55, D-75 Heilbronn, Germany Document Number: 866 For technical questions, contact: Rev..6, -Dec-5
9 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay, disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: 8-Jul-8
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SOT89 Rev. 05 21 March 2013 Product data sheet 1. Product profile 1.1 General description in a SOT89 plastic package. 1.2 Features and benefits High gain Gold metallization ensures excellent reliability
TEA1024/ TEA1124. Zero Voltage Switch with Fixed Ramp. Description. Features. Block Diagram
Zero Voltage Switch with Fixed Ramp TEA04/ TEA4 Description The monolithic integrated bipolar circuit, TEA04/ TEA4 is a zero voltage switch for triac control in domestic equipments. It offers not only
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
High Power Infrared Emitting Diode, 94 nm, GaAlAs, MQW DESCRIPTION 94 8389 is an infrared, 94 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded
Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
Linear Optocoupler, High Gain Stability, Wide Bandwidth
ishay Semiconductors Linear Optocoupler, High Gain Stability, Wide Bandwidth i9 DESCRIPTION The linear optocoupler consists of an AlGaAs IRLED irradiating an isolated feedback and an output PIN photodiode
MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS
, is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit
2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS
N393, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 4 Vdc CollectorBase Voltage V CBO 6 Vdc EmitterBase
DATA SHEET. BST50; BST51; BST52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Feb 20.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 Supersedes data of 2001 Feb 20 2004 Dec 09 FEATURES High current (max. 0.5 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS
DG2302. High-Speed, Low r ON, SPST Analog Switch. Vishay Siliconix. (1-Bit Bus Switch with Level-Shifter) RoHS* COMPLIANT DESCRIPTION FEATURES
High-Speed, Low r ON, SPST Analog Switch (1-Bit Bus Switch with Level-Shifter) DG2302 DESCRIPTION The DG2302 is a high-speed, 1-bit, low power, TTLcompatible bus switch. Using sub-micron CMOS technology,
High-Bandwidth, Low Voltage, Dual SPDT Analog Switches
DG, DG High-Bandwidth, Low Voltage, Dual SPDT Analog Switches DESCRIPTION The DG/DG are monolithic CMOS dual single-pole/double-throw (SPDT) analog switchs. They are specifically designed for low-voltage,
BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
65 V, 00 ma NPN general-purpose transistors Rev. 07 7 November 009 Product data sheet. Product profile. General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40 80 VOLTS, 30 WATTS
,, Medium-Power Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation Voltage Excellent
BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO 65 45
DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan 26. 2001 Sep 21.
DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D87 PBSS554Z 4 V low V CEsat PNP transistor Supersedes data of 21 Jan 26 21 Sep 21 FEATURES Low collector-emitter saturation voltage High current capability Improved
P-Channel 20 V (D-S) MOSFET
Si30CDS P-Channel 0 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 0 0. at V GS = - 4.5 V - 3. 0.4 at V GS = -.5 V -.7 3.3 nc TO-36 (SOT-3) FEATURES Halogen-free According
DISCRETE SEMICONDUCTORS DATA SHEET. BFQ34 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC4 September 995 DESCRIPTION PINNING NPN transistor encapsulated in a 4 lead SOTA envelope with a ceramic cap. All leads are isolated
2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS
2N396 General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V
Preamplifier Circuit for IR Remote Control
Preamplifier Circuit for IR Remote Control 22906 FEATURES Carrier-out-function: carrier frequency and burst length accurately correspond to the input signal AC coupled response from 20 khz to 60 khz; all
BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. http://onsemi.com MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Package is Available* COLLECTOR 1 2 BASE MAXIMUM RATINGS Collector-Emitter oltage Collector-Base oltage Rating Symbol alue Unit CEO 65
Linear Optocoupler, High Gain Stability, Wide Bandwidth
Linear Optocoupler, High Gain IL3 i9 DESCRIPTION The IL3 linear optocoupler consists of an AlGaAs IRLED irradiating an isolated feedback and an output PIN photodiode in a bifurcated arrangement. The feedback
Schottky Rectifier, 1.0 A
Schottky Rectifier, 1.0 A VS-BQ060PbF Vishay High Power Products FEATURES Small foot print, surface mountable Low forward voltage drop SMB Cathode Anode High frequency operation Guard ring for enhanced
BC327, BC327-16, BC327-25, BC327-40. Amplifier Transistors. PNP Silicon. These are Pb Free Devices* http://onsemi.com. Features MAXIMUM RATINGS
BC327, BC327-16, BC327-25, BC327-4 Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 45 Vdc CollectorEmitter Voltage
Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 10 V 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 04. 2004 Feb 03.
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 Supersedes data of 2002 Oct 04 2004 Feb 03 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS
ULN2801A, ULN2802A, ULN2803A, ULN2804A
ULN2801A, ULN2802A, ULN2803A, ULN2804A Eight Darlington array Datasheet production data Features Eight Darlington transistors with common emitters Output current to 500 ma Output voltage to 50 V Integral
Optocoupler, Phototransistor Output (Dual, Quad Channel)
Optocoupler, Phototransistor Output (Dual, Quad hannel) Dual hannel 2 8 7 E FETURES urrent transfer ratio at I F = m 3 4 6 5 E 6 E Isolation test voltage, 5300 V RMS ompliant to RoHS Directive 2002/95/E
Zero Voltage Switch with Adjustable Ramp. R 2 (R sync ) 220 k (250 V~) Synchronization. Full wave logic Pulse amplifier. 58 k N
Zero Voltage Switch with Adjustable Ramp U217B/ U217B-FP Description The integrated circuit, U217B, is designed as a zerovoltage switch in bipolar technology. It is used to control resistive loads at mains
BD238. Low voltage PNP power transistor. Features. Applications. Description. Low saturation voltage PNP transistor
Low voltage PNP power transistor Features Low saturation voltage PNP transistor Applications Audio, power linear and switching applications Description The device is manufactured in planar technology with
45 V, 100 ma NPN general-purpose transistors
Rev. 9 2 September 214 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number
DG2515, DG2516. 3-Ω, 235-MHz Bandwidth, Dual SPDT Analog Switch. Vishay Siliconix. Not for New Design. RoHS COMPLIANT DESCRIPTION FEATURES BENEFITS
Not for New Design DG, DG -Ω, -MHz Bandwidth, Dual SPDT Analog Switch DESCRIPTION The DG, DG are low-voltage dual single-pole/ double-throw monolithic CMOS analog switches. Designed to operate from.8 V
DG2731/2732/2733. Low Voltage, 0.4 Ω, Dual SPDT Analog Switch. Vishay Siliconix. RoHS COMPLIANT FEATURES
Low Voltage, 0.4 Ω, Dual SPDT Analog Switch DG273/2732/2733 DESCRIPTION The DG273/2732/2733 are low voltage, low on-resistance, dual single-pole/double-throw (SPDT) monolithic CMOS analog switches designed
N-Channel 20-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUD7N-4P PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.37 @ V GS = V 37.6 @ V GS = 4.5 V 9 TO-5 D FEATURES TrenchFET Power MOSFET 75 C Junction Temperature PWM Optimized for
2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish
N393, N393 is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Package May be Available. The GSuffix Denotes a PbFree Lead Finish MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter
High Performance Schottky Rectifier, 3.0 A
High Performance Schottky Rectifier, 3. A Cathode Anode SMC PRODUCT SUMMARY Package SMC I F(AV) 3. A V R 4 V V F at I F.46 V I RM 3 ma at 25 C T J max. 5 C Diode variation Single die E AS 6. mj FEATURES
High-Speed, Low r ON, SPST Analog Switch (1-Bit Bus Switch)
High-Speed, Low r ON, SPST Analog Switch (1-Bit Bus Switch) DG2301 ishay Siliconix DESCRIPTION The DG2301 is a high-speed, 1-bit, low power, TTLcompatible bus switch. Using sub-micron CMOS technology,
P-Channel 20-V (D-S) MOSFET
Si33DS P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).39 at V GS = -.5 V -.7 -.5 at V GS = -.5 V -..68 at V GS = -.8 V - 3.5 FEATURES Halogen-free According to IEC 69-- Available
Dual Common-Cathode Ultrafast Plastic Rectifier
(F,B)6AT thru (F,B)6JT Dual Common-Cathode Ultrafast Plastic Rectifier TO-0AB 6xT PIN PIN 3 PIN CASE 3 TO-63AB ITO-0AB F6xT PIN PIN 3 PIN 3 FEATURES Glass passivated chip junction Ultrafast recovery time
High Performance Schottky Rectifier, 1.0 A
High Performance Schottky Rectifier, 1. A VS-BQ3-M3 Cathode Anode SMB PRODUCT SUMMARY Package SMB I F(AV) 1. A V R 3 V V F at I F.42 V I RM max. 15 ma at 125 C T J max. 15 C Diode variation Single die