Optocoupler, Phototransistor Output, with Base Connection

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1 CNY7 Optocoupler, Phototransistor FEATURES Isolation test voltage 5 V RMS A 6 B Long term stability i79 C NC 5 C E Industry standard dual-in-line package Lead (Pb-free component Component in accordance to RoHS /95/EC and WEEE /96/EC DESCRIPTION The CNY7 is an optically coupled pair consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon NPN phototransitor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The CNY7 can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation. AGENCY APPROVALS Underwriters lab file no. E57 system code H or J DIN EN (VDE 88 BSI IEC 695, IEC 665 FIMKO ORDER INFORMATION PART REMARKS CNY7- CTR % to 8 %, DIP-6 CNY7- CTR 6 % to 5 %, DIP-6 CNY7- CTR % to %, DIP-6 CNY7- CTR 6 % to %, DIP-6 CNY7-X6 CTR % to 8 %, DIP-6 mil (option 6 CNY7-X7 CTR % to 8 %, SMD-6 (option 7 CNY7-X9 CTR % to 8 %, SMD-6 (option 9 CNY7-X6 CTR 6 % to 5 %, DIP-6 mil (option 6 CNY7-X7 CTR 6 % to 5 %, SMD-6 (option 7 CNY7-X9 CTR 6 % to 5 %, SMD-6 (option 9 CNY7-X6 CTR % to %, DIP-6 mil (option 6 CNY7-X7 CTR % to %, SMD-6 (option 7 CNY7-X9 CTR % to %, SMD-6 (option 9 CNY7-X6 CTR 6 % to %, DIP-6 mil (option 6 CNY7-X7 CTR 6 % to %, SMD-6 (option 7 CNY7-X9 CTR 6 % to %, SMD-6 (option 9 Note For additional information on the available options refer to option information. ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 6 V Forward current 6 ma Surge current t µs SM.5 A Power dissipation P diss mw For technical questions, contact: Document Number: 866 Rev..6, -Dec-5

2 Optocoupler, Phototransistor CNY7 ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT OUTPUT Collector emitter breakdown voltage BV CEO 7 V Emitter base breakdown voltage BV EBO 7 V Collector current 5 ma t <. ms ma Power dissipation P diss 5 mw COUPLER Isolation test voltage between emitter and detector t = s V ISO 5 V RMS Creepage distance 7 mm Clearance distance 7 mm Isolation thickness between emitter and detector. mm Comparative tracking index per DIN IEC /VDE, part 75 Isolation resistance V IO = 5 V, T amb = 5 C R IO Ω V IO = 5 V, T amb = C R IO Ω Storage temperature T stg - 55 to + 5 C Operating temperature T amb - 55 to + C Soldering temperature max. s, dip soldering: distance to seating plane.5 mm T sld 6 C Note T amb = 5 C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage = 6 ma V F.5.65 V Breakdown voltage I R = ma V BR 6 V Reverse current V R = 6 V I R. µa Capacitance V R = V, f = MHz C O 5 pf Thermal resistance R th 75 K/W OUTPUT Collector emitter capacitance V CE = 5 V, f = MHz C CE 5. pf Collector base capacitance V CB = 5 V, f = MHz C CB 6.5 pf Emitter base capacitance V EB = 5 V, f = MHz C EB 7.5 pf Thermal resistance R th 5 K/W COUPLER Collector emitter, saturation voltage V F = ma, =.5 ma V CEsat.5. V Coupling capacitance C C.6 pf Collector emitter, leakage current V CE = V CNY7- EO 5 na CNY7- EO 5 na CNY7- EO 5 na CNY7- EO 5 na Note T amb = 5 C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. Document Number: 866 For technical questions, contact: Rev..6, -Dec-5 5

3 CNY7 Optocoupler, Phototransistor CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT / V CE = 5 V, = ma V CE = 5 V, = ma Note Current transfer ratio and collector-emitter leakage current by dash number (T amb C. CNY7- CTR 8 % CNY7- CTR 6 5 % CNY7- CTR % CNY7- CTR 6 % CNY7- CTR % CNY7- CTR 5 % CNY7- CTR 7 % CNY7- CTR 56 9 % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT LINEAR OPERATION (without saturation Turn-on time = ma, V CC = 5 V, R L = 75 Ω t on µs Rise time = ma, V CC = 5 V, R L = 75 Ω t r µs Turn-off time = ma, V CC = 5 V, R L = 75 Ω t off. µs Fall time = ma, V CC = 5 V, R L = 75 Ω t f µs Cut-off frequency = ma, V CC = 5 V, R L = 75 Ω f CO 5 khz SWITCHING OPERATION (with saturation = ma CNY7- t on µs Turn-on time = ma CNY7- t on. µs CNY7- t on. µs = 5 ma CNY7- t on 6 µs = ma CNY7- t r µs Rise time = ma CNY7- t r µs CNY7- t r µs = 5 ma CNY7- t r.6 µs = ma CNY7- t off 8 µs Turn-off time = ma CNY7- t off µs CNY7- t off µs = 5 ma CNY7- t off 5 µs = ma CNY7- t f µs Fall time = ma CNY7- t f µs CNY7- t f µs = 5 ma CNY7- t f 5 µs For technical questions, contact: Document Number: Rev..6, -Dec-5

4 Optocoupler, Phototransistor CNY7 TYPICAL CHARACTERISTICS T amb = 5 C, unless otherwise specified 7 Ω R L = 75 Ω V CC = 5 V (% = C, V CE = 5 V / = f ( icny7_ icny7_. (ma Fig. - Linear Operation (without Saturation Fig. - Current Transfer Ratio vs. Diode Current kω V CC = 5 V (% = 5 C, V CE = 5 V / = f ( 7 Ω icny7_ icny7_5. (ma Fig. - Switching Operation (with Saturation Fig. 5 - Current Transfer Ratio vs. Diode Current = - 5 C, V CE = 5 V / = f ( = 5 C, V CE = 5 V / = f ( (% (% icny7_. (ma icny7_6. (ma Fig. - Current Transfer Ratio vs. Diode Current Fig. 6 - Current Transfer Ratio vs. Diode Current Document Number: 866 For technical questions, contact: Rev..6, -Dec-5 7

5 CNY7 Optocoupler, Phototransistor (% = 75 C, V CE = 5 V / = f ( = f (V CE = ma = ma = ma = 7 ma = 5 ma icny7_7. (ma Fig. 7 - Current Transfer Ratio vs. Diode Current = ma = ma 5 5 icny7_ V CE (V Fig. - Output Characteristics (% ( = ma, V CE = 5 V / = f (T V F (V... V F = f ( 5 C 5 C 75 C icny7_ T A ( C Fig. 8 - Current Transfer Ratio (CTR vs. Temperature.9. (ma icny7_ Fig. - Forward Voltage (ma icny7_9 = f (V CE = 5 5 V CE (V Fig. 9 - Transistor Characteristics = µa = µa = 5 µa = µa = 5 µa = µa EO (µa.. EO = f (V,T ( = V CE = 5 V V CE = V C TA icny7_ Fig. - Collector Emitter Off-state Current For technical questions, contact: Document Number: Rev..6, -Dec-5

6 Optocoupler, Phototransistor CNY7 V CE sat..9 V CEsat = f (.8.7 = x icny7_ (ma Fig. - Saturation Voltage vs. Collector Current and Modulation Depth CNY7- V CE sat (V..9.8 V CEsat = f (.7.6 = = x = x icny7_6 (ma Fig. 6 - Saturation Voltage vs. Collector Current and Modulation Depth CNY7- V CE sat (V..9 V CEsat = f ( = x.. = x.. icny7_ (ma Fig. - Saturation Voltage vs. Collector Current and Modulation Depth CNY7- P tot (mw 5 5 icny7_8 P tot = f Transistor Diode T A ( C Fig. 7 - Permissible Power Dissipation for Transistor and Diode V CE sat (V..9 V CEsat = f (.8.7 = = x.. I F = x icny7_5 (ma Fig. 5 - Saturation Voltage vs. Collector Current and Modulation Depth CNY7- Document Number: 866 For technical questions, contact: Rev..6, -Dec-5 9

7 CNY7 Optocoupler, Phototransistor PACKAGE DIMENSIONS in inches (millimeters Pin one ID.8 (6..56 ( ISO method A.5 (8.5. (8.7.9 (. min..8 (.5. (.55. (.. (7.6 typ..5 (.8 i78 typ..8 (.5. (.55. (.8 min.. (.8.5 (.9. (.5 typ. to 9 8. (.5 typ.. to.7 (7.6 to 8.8. (.9. (. Option 6 Option 7 Option 9.7 (.6.9 ( (7.8.9 (7.. (7.6 typ..75 ( (.. (7.6 ref.. (.5. (.5. (.6. (.9.8 (.7.5 (8. min.. (8. min..6 (. max..8(.6.6 (.. (..98 (.9. (.5. (..5 (8. min.. (. typ. 5 max For technical questions, contact: Document Number: 866 Rev..6, -Dec-5

8 Optocoupler, Phototransistor CNY7 OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to. Meet all present and future national and international statutory requirements.. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs. The Montreal Protocol (987 and its London Amendments (99 intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.. Class I and II ozone depleting substances in the Clean Air Act Amendments of 99 by the Environmental Protection Agency (EPA in the USA. Council Decision 88/5/EEC and 9/69/EEC Annex A, B and C (transitional substances respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 55, D-75 Heilbronn, Germany Document Number: 866 For technical questions, contact: Rev..6, -Dec-5

9 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay, disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: 8-Jul-8

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