P-Channel 40-V (D-S), 175 C MOSFET

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1 New Product P-Channel 4-V (D-S), 75 C MOSFET SUD5P4-9L PRODUCT SUMMARY V DS (V) r DS(on) (Ω) (A) d.94 at V GS = - V at V GS = V - 5 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature Available RoHS* COMPLIANT TO-5 S Drain Connected to Tab G G D S Top View Ordering Information: SUD5P4-9L SUD5P4-9L (Lead (Pb)-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T A = 5 C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS - 4 Gate-Source Voltage V GS ± V - 5 d Continuous Drain Current (T J = 75 C) - 5 d A Pulsed Drain Current M - Avalanche Current I AS - 5 Single Avalanche Energy a L =. mh E AS 5 mj Power Dissipation 36 c P D T A = 5 C 3 b, c W Operating Junction and Storage Temperature Range T J, T stg - 55 to 75 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Junction-to-Ambient b t sec 5 8 R thja Steady State 4 5 C/W Junction-to-Case R thjc.8. Notes: a. Duty cycle %. b. When Mounted on " square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Package limited. * Pb containing terminations are not RoHS compliant, exemptions may apply. S-766-Rev. B, 6-Aug-7

2 SUD5P4-9L New Product SPECIFICATIONS T J = 5 C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V (BR)DSS V GS = V, = - 5 µa - 4 V Gate Threshold Voltage V GS(th) V DS = V GS, = - 5 µa Gate-Body Leakage I GSS V DS = V, V GS = ± V ± na Zero Gate Voltage Drain Current SS V DS = - 3 V, V GS = V, T J = 5 C - 5 µa V DS = - 3 V, V GS = V - V DS = - 3 V, V GS = V, T J = 75 C - 5 On-State Drain Current a (on) V DS = - 5 V, V GS = - V - 5 A Notes: a. Pulse test; pulse width 3 µs, duty cycle %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. V GS = - V, = - 4 A V GS = - V, = - 5 A, T J = 5 C Drain-Source On-State Resistance a.4 r DS(on) Ω V GS = - V, = - 5 A, T J = 75 C.7 V GS = V, = - 8 A.5.45 Forward Transconductance a g fs V DS = - 5 V, = - 4 A 73 S Dynamic b Total Gate Charge c Q g Input Capacitance C iss 48 Output Capacitance C oss V GS = V, V DS = - 5 V, f = MHz 7 Reverse Transfer Capacitance C rss 55 5 Gate-Source Charge c Q gs V DS = - V, V GS = - V, = - 5 A 8.5 Gate-Drain Charge c Q gd 7 Turn-On Delay Time c t d(on) 5 Rise Time c t r V DD = - V, R L =.4 Ω 6 9 Turn-Off Delay Time c t d(off) - 5 A, V GEN = - V, R G = 6 Ω 45 Fall Time c t f 4 Source-Drain Diode Ratings and Characteristics () b Continuous Current I S - 5 Pulsed Current I SM - A Forward Voltage a V SD I F = - 5 A, V GS = V V Reverse Recovery Time t rr I F = - 5 A, di/dt = A/µs ns Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. pf nc ns S-766-Rev. B, 6-Aug-7

3 New Product SUD5P4-9L TYPICAL CHARACTERISTICS 5 C unless noted V GS = thru 5 V 4 V V 5 C V C V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics. T C = - 55 C - Transconductance (S) g fs C 5 C - On-Resistance (Ω) rds(on) V GS = 4.5 V V GS = V V GS - Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 8 C - Capacitance (pf) C oss C iss - Gate-to-Source Voltage (V) V GS V DS = V = 5 A C rss Capacitance Q g - Total Gate Charge (nc) Gate Charge S-766-Rev. B, 6-Aug-7 3

4 SUD5P4-9L New Product TYPICAL CHARACTERISTICS 5 C unless noted.8.6 V GS = V = 5 A rds(on) - On-Resistance (Normalized) Source Current (A) I S T J = 5 C T J = 5 C T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature THERMAL RATINGS V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 r DS(on) Limited M Limited T C - Case Temperature ( C) Maximum Avalanche and Drain Current vs. Case Temperature (on) Limited Single Pulse P(t) =. BV DSS Limited P(t) =. Safe Operating Area P(t) =. P(t) =. P(t) =. Duty Cycle =.5 Normalized Effective Transient Thermal Impedance Single Pulse Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see 4 S-766-Rev. B, 6-Aug-7

5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: 8-Jul-8

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