MOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM Power-MOSFET,40V BSC010N04LS. DataSheet. PowerManagement&Multimarket
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1 MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM OptiMOS TM PowerMOSFET,40V DataSheet Rev.2.2 Final PowerManagement&Multimarket
2 OptiMOS TM PowerMOSFET,40V 1Description Features Optimizedforsychronousrectification VerylowonresistanceRDS(on) %avalanchetested Superiorthermalresistance Nchannel,logiclevel QualifiedaccordingtoJEDEC 1) fortargetapplications Pbfreeleadplating;RoHScompliant HalogenfreeaccordingtoIEC Highersolderjointreliabilityduetoenlargedsourceinterconnection TDSON8FL(enlargedsourceinterconnection) Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 1.0 mω ID A Qoss 84 nc Qg(0V..10V) 95 nc S 1 S 2 S 3 G 4 8 D 7 D 6 D 5 D Type/OrderingCode Package Marking RelatedLinks TDSON8 FL 010N04LS 1) JSTD20 and JESD22 2 Rev.2.2,
3 OptiMOS TM PowerMOSFET,40V TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Package Outlines Revision History Disclaimer Rev.2.2,
4 OptiMOS TM PowerMOSFET,40V 2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current ID Pulsed drain current 2) ID,pulse 400 A TC=25 C Avalanche current, single pulse 3) IAS 50 A TC=25 C 38 A VGS=10V,TC=25 C VGS=10V,TC= C VGS=4.5V,TC=25 C VGS=4.5V,TC= C VGS=10V,TA=25 C,RthJA=50K/W 1) Avalanche energy, single pulse EAS 330 mj ID=50A,RGS=25Ω Gate source voltage VGS V Power dissipation Ptot Operating and storage temperature Tj,Tstg C W TC=25 C TA=25 C,RthJA=50K/W 1) IEC climatic category; DIN IEC 681: 55/150/56 3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case, bottom Thermal resistance, junction case, top RthJC K/W RthJC 20 K/W Device on PCB, 6 cm 2 cooling area 1) RthJA 50 K/W 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 4 Rev.2.2,
5 OptiMOS TM PowerMOSFET,40V 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 40 V VGS=0V,ID=1mA Gate threshold voltage VGS(th) V VDS=VGS,ID=250µA Zero gate voltage drain current IDSS µa VDS=40V,VGS=0V,Tj=25 C VDS=40V,VGS=0V,Tj=125 C Gatesource leakage current IGSS 10 na VGS=20V,VDS=0V Drainsource onstate resistance RDS(on) Gate resistance 1) RG Ω mω VGS=4.5V,ID=50A VGS=10V,ID=50A Transconductance gfs S VDS >2 ID RDS(on)max,ID=50A Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance 1) Ciss pf VGS=0V,VDS=20V,f=1MHz Output capacitance 1) Coss pf VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance 1) Crss pf VGS=0V,VDS=20V,f=1MHz Turnon delay time td(on) 10 ns Rise time tr 12 ns Turnoff delay time td(off) 46 ns Fall time tf 9 ns VDD=20V,VGS=10V,ID=30A, RG,ext,ext=1.6Ω VDD=20V,VGS=10V,ID=30A, RG,ext,ext=1.6Ω VDD=20V,VGS=10V,ID=30A, RG,ext,ext=1.6Ω VDD=20V,VGS=10V,ID=30A, RG,ext,ext=1.6Ω 1) Defined by design. Not subject to production test 5 Rev.2.2,
6 OptiMOS TM PowerMOSFET,40V Table6Gatechargecharacteristics 1) Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Gate to source charge Qgs 16 nc VDD=20V,ID=50A,VGS=0to10V Gate charge at threshold Qg(th) 11 nc VDD=20V,ID=50A,VGS=0to10V Gate to drain charge 2) Qgd nc VDD=20V,ID=50A,VGS=0to10V Switching charge Qsw 21 nc VDD=20V,ID=50A,VGS=0to10V Gate charge total 2) Qg nc VDD=20V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau 2.4 V VDD=20V,ID=50A,VGS=0to10V Gate charge total 2) Qg nc VDD=20V,ID=50A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) 84 nc VDS=0.1V,VGS=0to10V Output charge 2) Qoss nc VDD=20V,VGS=0V Table7Reversediode Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode continuous forward current IS A TC=25 C Diode pulse current IS,pulse 400 A TC=25 C Diode forward voltage VSD V VGS=0V,IF=50A,Tj=25 C Reverse recovery time 2) trr ns VR=20V,IF=50A,diF/dt=400A/µs Reverse recovery charge Qrr 50 nc VR=20V,IF=50A,diF/dt=400A/µs 1) See Gate charge waveforms for parameter definition 2) Defined by design. Not subject to production test 6 Rev.2.2,
7 OptiMOS TM PowerMOSFET,40V 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 160 Diagram2:Draincurrent Ptot[W] 80 ID[A] TC[ C] Ptot=f(TC) TC[ C] ID=f(TC);VGS 10V Diagram3:Safeoperatingarea 10 3 Diagram4:Max.transientthermalimpedance µs 1 µs 10 2 µs ms 0.5 ID[A] ms DC ZthJC[K/W] single pulse VDS[V] ID=f(VDS);TC=25 C;D=0;parameter:tp tp[s] ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.2,
![transientthermalimpedance 10 1 10 µs 1 µs 10 2 µs 10 0 1 ms 0.5 ID[A] 10 1 10 ms DC ZthJC[K/W] 10 1 0.2 0.1 0.05 0.02 10 0 10 2 0.](/docs-images/47/21042616/images/page_7.jpg "01 single pulse 10 1 10 1 10 0 10 1 10 2 VDS[V] ID=f(VDS);TC=25 C;D=0;parameter:tp 10 3 10 6 10 5 10 4 10 3 10 2 10 1 10 0 tp[s]")
8 OptiMOS TM PowerMOSFET,40V Diagram5:Typ.outputcharacteristics ID[A] V 4.5 V 4 V 5 V 3.5 V 3.2 V 3 V 2.8 V Diagram6:Typ.drainsourceonresistance V 3.5 V 4 V 1.0 RDS(on)[mΩ] 10 V V 5 V 7 V 8 V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS ID[A] RDS(on)=f(ID);Tj=25 C;parameter:VGS Diagram7:Typ.transfercharacteristics 400 Diagram8:Typ.forwardtransconductance ID[A] gfs[s] C 25 C VGS[V] ID=f(VGS); VDS >2 ID RDS(on)max;parameter:Tj ID[A] gfs=f(id);tj=25 C 8 Rev.2.2,
![0 0 20 40 60 80 ID[A] RDS(on)=f(ID);Tj=25 C;parameter:VGS Diagram7:Typ.transfercharacteristics 400 Diagram8:Typ.](/docs-images/47/21042616/images/page_8.jpg "forwardtransconductance 400 320 320 240 240 ID[A] gfs[s] 160 160 80 150 C 25 C 80 0 0 1 2 3 4 5 VGS[V] ID=f(VGS); VDS >2 ID RDS(on)max;parameter:Tj 0")
9 OptiMOS TM PowerMOSFET,40V Diagram9:Drainsourceonstateresistance 2.00 Diagram10:Typ.gatethresholdvoltage RDS(on)[mΩ] max typ VGS(th)[V] Tj[ C] RDS(on)=f(Tj);ID=50A;VGS=10V Tj[ C] VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances 10 4 Ciss Coss Diagram12:Forwardcharacteristicsofreversediode C 150 C 25 C, max 150 C, max C[pF] Crss IF[A] VDS[V] C=f(VDS);VGS=0V;f=1MHz VSD[V] IF=f(VSD);parameter:Tj 9 Rev.2.2,
![0 60 20 20 60 140 180 Tj[ C] VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.](/docs-images/47/21042616/images/page_9.jpg "capacitances 10 4 Ciss Coss Diagram12:Forwardcharacteristicsofreversediode 10 3 25 C 150 C 25 C, max 150 C, max 10 3 10 2 C[pF] Crss IF[A] 10 2 10 1 10")
10 OptiMOSTM PowerMOSFET, 40 V Diagram 13: Avalanche characteristics Diagram 14: Typ. gate charge V 10 8V 25 C C 8 VGS [V] 125 C IAV [A] 32 V tav [µs] Qgate [nc] IAS=f(tAV); RGS=25 Ω; parameter: Tj(start) VGS=f(Qgate); ID=50 A pulsed; parameter: VDD Diagram 15: Drainsource breakdown voltage Gate charge waveforms VBR(DSS) [V] Tj [ C] VBR(DSS)=f(Tj); ID=1 ma 10 Rev. 2.2,
![Qgate [nc] IAS=f(tAV); RGS=25 Ω; parameter: Tj(start) VGS=f(Qgate); ID=50 A pulsed; parameter: VDD Diagram 15:](/docs-images/47/21042616/images/page_10.jpg "Drainsource breakdown voltage Gate charge waveforms 46 44 42 VBR(DSS) [V] 40 38 36 34 32 30 60 20 20 60 140 180 Tj [")
11 OptiMOSTM PowerMOSFET, 40 V 6 Package Outlines Figure 1 Outline TDSON8 FL, dimensions in mm/inches 11 Rev. 2.2,
12 OptiMOSTM PowerMOSFET, 40 V Figure 2 Outline Footprint TDSON8 FL 12 Rev. 2.2,
13 OptiMOSTM PowerMOSFET, 40 V Figure 3 Outline TDSON8 FL Tape 13 Rev. 2.2,
14 OptiMOSTM PowerMOSFET, 40 V Revision History Revision: , Rev. 2.2 Previous Revision Revision Date Subjects (major changes since last revision) Rev. 2.2 We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG München, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 14 Rev. 2.2,
MOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS 3Power-Transistor,100V BSZ440N10NS3G. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM OptiMOS 3PowerTransistor,V BSZ44NNS3G DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª3PowerTransistor,V BSZ44NNS3G 1Description
OptiMOS TM Power-Transistor
Type BSC28N6NS OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target
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Type IPD6N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS
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Type IPD36N4L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS
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OptiMOS Power-Transistor Product Summary V DS 55 V R DS(on),max 4) 35 mω Features Dual N-channel Logic Level - Enhancement mode AEC Q11 qualified I D 2 A PG-TDSON-8-4 MSL1 up to 26 C peak reflow 175 C
SIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS V R DS(on),max 3.5 Ω I DSS,min.4 A Available with V GS(th) indicator on reel Pb-free lead plating; RoHS
IRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings
![IRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings](/thumbs/40/21333646.jpg "IRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings")
PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF150 100V 0.055Ω 38A IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543]
SPW32N50C3. Cool MOS Power Transistor V DS @ T jmax 560 V
SPW3N5C3 Cool MOS Power Transistor V DS @ T jmax 56 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances
CoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rated Product
N-channel enhancement mode TrenchMOS transistor
FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = V Low on-state resistance Fast switching I D = A High thermal cycling performance Low thermal resistance R DS(ON) mω (V GS = V) g s R DS(ON)
200V, N-CHANNEL. Absolute Maximum Ratings. Features: www.irf.com 1 PD - 90370
PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF240 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF240 200V 0.18Ω 18A The HEXFET technology
IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery anti-paralleldiode
IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery antiparalleldiode IKWNH3 Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl G C E Highspeedswitchingseriesthirdgeneration
IDB45E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C
Fast Switching EmCon Diode Feature 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM
IDB04E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 4 A V F 1.65 V T jmax 150 C
Fast Switching EmCon Diode Feature 12 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 12 V I F 4 V F 1.65 V T jmax
IDB30E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
Fast Switching EmCon Diode Feature 1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 1200 V I F 30 V F 1.65 V T
IDB09E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 9 A V F 1.65 V T jmax 150 C
Fast Switching EmCon Diode Feature 1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 1200 V I F 9 V F 1.65 V T
Final data. Maximum Ratings Parameter Symbol Value Unit
SPPN8C3 SPN8C3 Cool MOS Power Transistor V DS 8 V Feature R DS(on).45 Ω New revolutionary high voltage technology Ultra low gate charge I D Periodic avalanche rated Extreme dv/dt rated Ultra low effective
0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) Features 0.603 (15.32) 0.573 (14.55) 0.104 (2.64) 0.094 (2.39)
*.6 (4.6).9 (2.28).25 (5.2).9 (4.83).45 (.54) Max..4 (.4).35 (8.89).54 (3.9).42 (3.6) ia. PIN S.48 (29.6).8 (28.4) * May be notched or flat.3 (2.87).2 (2.56).635 (6.3).58 (4.73).37 (.94).26 (.66).5 (2.67).95
Features. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N8F6 110N8F6 TO-220 Tube
N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max I D P TOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W TO-220
Symbol Parameter Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive
BUZ11 N - CHANNEL 50V - 0.03Ω - 30A -TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) I D BUZ11 50 V < 0.04 Ω 30 A TYPICAL R DS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT
AUIRLR2905 AUIRLU2905
Features dvanced Planar Technology Logic Level Gate Drive Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free,
IRFP450. N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET
IRFP450 N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRFP450 500 V < 0.4 Ω 14 A TYPICAL R DS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY
IRF830. N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET
IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRF830 500 V < 1.5 Ω 4.5 A TYPICAL R DS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY
AUIRFR8405 AUIRFU8405
Features Advanced Process Technology New Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
5A 3A. Symbol Parameter Value Unit
STP5NA50 STP5NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP5NA50 STP5NA50FI 500 V 500 V
TSM2N7002K 60V N-Channel MOSFET
SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 5 @ V GS = 10V 100 60 5.5 @ V GS = 5V 100 Features Low On-Resistance ESD Protection High Speed Switching
STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP6N60FI 600 V < 1.2 Ω 3.8 A TYPICAL R DS(on) =1Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT
Trench gate field-stop IGBT, M series 650 V, 10 A low loss. Features. Description
Trench gate field-stop IGBT, M series 650 V, 10 A low loss Datasheet - production data TAB D2PAK 1 3 Features 6 µs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 10 A Tight parameter distribution
N-Channel 60-V (D-S), 175 C MOSFET
N-Channel 6-V (D-S), 75 C MOSFET SUP/SUB7N6-4 V (BR)DSS (V) r DS(on) ( ) (A) 6.4 7 a TO-22AB D TO-263 DRAIN connected to TAB G G D S Top View SUP7N6-4 G D S Top View SUB7N6-4 S N-Channel MOSFET Parameter
WFU4N65S Product Description
65V SuperJunction Power MOSFET Features Ultra low Rdson Ultra low gate charge (typ. Qg =3nC) % UIS tested RoHS compliant G General escription Power MOSFET is fabricated using advanced super junction technology.
Features. P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET Features Pin Description -4V/-25, R DS(ON) = 4mΩ (typ.) @ V GS = -V R DS(ON) = 55mΩ (typ.) @ V GS = -5V Super High Dense Cell Design G D S Reliable and Rugged Lead Free
N-Channel 40-V (D-S) 175 C MOSFET
N-Channel 4-V (D-S) 75 C MOSFET SUP/SUB85N4-4 PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A) 4.4 @ V GS = V 85 a TO-22AB D TO-263 G DRAIN connected to TAB G D S Top View Ordering Information SUP85N4-4
BAV70... BAV70 BAV70W BAV70S BAV70U. Type Package Configuration Marking BAV70 BAV70S BAV70U BAV70W
BAV7... Silicon Switching Diode For highspeed switching applications Common cathode configuration BAV7S / U: For orientation in reel see package information below Pbfree (RoHS compliant) package ) Qualified
IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
SD4840/4841/4842/4843/4844
CURRENT MODE PWM CONTROLLER WITH BUILT-IN HIGH VOLTAGE MOSFET DESCRIPTION SD4840/4841/4842/4843/4844 is a current mode PWM controller with low standby power and low start current for power switch. In standby
Features. T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units. (Note 1b) 0.46
N-Channel.8 Vgs Specified PowerTrench MOSFET October 2 General Description This 2V N-Channel MOSFET uses Fairchild s high voltage PowerTrench process. It has been optimized for power management applications.
N-Channel 20-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUD7N-4P PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.37 @ V GS = V 37.6 @ V GS = 4.5 V 9 TO-5 D FEATURES TrenchFET Power MOSFET 75 C Junction Temperature PWM Optimized for
V DSS R DS(on) max Qg. 30V 3.2mΩ 36nC
PD - 96232 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
N-channel TrenchMOS logic level FET
SOT23 Rev. 2 7 November 2 Product data sheet. Product profile. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
30 V, single N-channel Trench MOSFET
SOT883B Rev. 1 11 May 212 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN16B-3 (SOT883B) Surface-Mounted
STN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description
N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET Features Type V DSS (@Tjmax) Exceptional dv/dt capability Avalanche rugged technology 100% avalanche tested R DS(on) max STN3NF06L 60 V < 0.1
Symbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 50 V V DGR Drain- gate Voltage (R GS =20kΩ) 50 V
BUZ71A N - CHANNEL 50V - 0.1Ω - 13A TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) I D BUZ71A 50 V < 0.12 Ω 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT
P-Channel 20 V (D-S) MOSFET
Si30CDS P-Channel 0 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 0 0. at V GS = - 4.5 V - 3. 0.4 at V GS = -.5 V -.7 3.3 nc TO-36 (SOT-3) FEATURES Halogen-free According
N - CHANNEL100V - 00.50Ω - 30A - TO-220/TO-220FI POWER MOSFET 30 A 16 A
IRF540 IRF540FI N - CHNNEL100V - 00.50Ω - 30 - TO-220/TO-220FI POWER MOSFET IRF540 IRF540FI TYPE V DSS R DS(on) I D 100 V 100 V
BAS16... Silicon Switching Diode For high-speed switching applications Pb-free (RoHS compliant) package 1) Qualified according AEC Q101 BAS16S BAS16U
BAS6... Silicon Switching Diode For highspeed switching applications Pbfree (RoHS compliant) package ) Qualified according AEC Q BAS6 BAS6W BAS6L BAS6V BAS6W BAS63W BAS6S BAS6U BAS67L4! $ # " "!,,,!,,!
Features 1.7 A, 20 V. R DS(ON) Symbol Parameter Ratings Units
N-Channel.5V Specified PowerTrench TM MOSFET April 999 General Description This N-Channel.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially
How To Make A Field Effect Transistor (Field Effect Transistor) From Silicon P Channel (Mos) To P Channel Power (Mos) (M2) (Mm2)
TPC811 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC811 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
Si5DS P-Channel.5-W,.-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = -.5 V ±.5 -.7 at V GS = -.5 V ±. at V GS = -. V ± FEATURES Halogen-free According to IEC 9-- Available TrenchFET
O p t i m u m M O S F E T S e l e c t i o n f o r S y n c h r o n o u s R e c t i f i c a t i o n
V2.4. May 2012 O p t i m u m M O S F E T S e l e c t i o n f o r S y n c h r o n o u s R e c t i f i c a t i o n IFAT PMM APS SE DS Mößlacher Christian Guillemant Olivier Edition 2011-02-02 Published by
RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000
PD 97437A IRF93PbF HEXFET Power MOSFET V DS 30 V R DS(on) max (@V GS = V) I D (@T A = 25 C) 4. mω 20 A * SO8 Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits
C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
STP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
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PD -97428 IRFH5020PbF HEXFET Power MOSFET V DS 200 V 55 m: R DS(on) max (@V GS = V) Q g (typical) 36 nc R G (typical).9 : I D (@T c(bottom) = 25 C) 43 A PQFN 5X6 mm Applications Secondary Side Synchronous
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PD 9698A DIGITAL AUDIO MOSFET IRFB422PbF Features Key parameters optimized for ClassD audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency
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