IDB04E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 4 A V F 1.65 V T jmax 150 C

Size: px
Start display at page:

Download "IDB04E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 4 A V F 1.65 V T jmax 150 C"

Transcription

1 Fast Switching EmCon Diode Feature 12 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 12 V I F 4 V F 1.65 V T jmax 15 C PGTO26332 Type Package Ordering Code IDB4E12 PGTO26332 Marking D4E12 Pin 1 PIN 2 PIN 3 NC C Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage V RRM 12 V Continous forward current T C =25 C T C =9 C I F Surge non repetitive forward current T C =25 C, t p = ms, sine halfwave Maximum repetitive forward current T C =25 C, t p limited by T jmax, D=.5 Power dissipation T C =25 C T C =9 C I FSM 28 I FRM 16.5 P tot Operating and storage temperature T j, T stg C Soldering temperature T S 245 C reflow soldering, MSL1 W Rev.2.2 Page

2 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction case R thjc 2.9 K/W Thermal resistance, junction ambient, leaded R thj 62 SMD version, device on min. 6 cm 2 cooling area 1) R thj Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Reverse leakage current V R =12V, T j =25 C V R =12V, T j =15 C Forward voltage drop I F =4, T j =25 C I F =4, T j =15 C I R V F µ 35 V Device on 4mm*4mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.2 Page

3 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Reverse recovery time V R =8V, I F =4, di F /dt=75/µs, T j =25 C V R =8V, I F =4, di F /dt=75/µs, T j =125 C V R =8V, I F =4, di F /dt=75/µs, T j =15 C Peak reverse current V R =8V, I F = 4, di F /dt=75/µs, T j =25 C V R =8V, I F =4, di F /dt=75/µs, T j =125 C V R =8V, I F =4, di F /dt=75/µs, T j =15 C Reverse recovery charge V R =8V, I F =4, di F /dt=75/µs, T j =25 C V R =8V, I F =4, di F /dt=75/µs, T j =125 C V R =8V, I F =4, di F /dt=75/µs, T j =15 C Reverse recovery softness factor S V R =8V, I F =4, di F /dt=75/µs, T j =25 C V R =8V, I F =4, di F /dt=75/µs, T j =125 C V R =8V, I F =4, di F /dt=75/µs, T j =15 C t rr I rrm Q rr ns nc Rev.2.2 Page

4 1 Power dissipation P tot = f (T C ) parameter: T j 15 C 45 W 35 2 Diode forward current I F = f(t C ) parameter: T j 15 C 12 9 Ptot 3 25 IF C C 15 T C T C 3 Typ. diode forward current I F = f (V F ) 4 Typ. diode forward voltage V F = f (T j ) IF C 25 C C 15 C VF 2.4 V V 3 V F Rev.2.2 Page C 16 T j 2791

5 5 Typ. reverse recovery time t rr = f (di F /dt) parameter: V R = 8V, T j = 125 C 6 Typ. reverse recovery charge Q rr =f(di F /dt) parameter: V R = 8V, T j = 125 C 5 ns 9 nc trr Qrr /µs di F /dt 7 Typ. reverse recovery current I rr = f (di F /dt) parameter: V R = 8V, T j = 125 C /µs di F /dt 8 Typ. reverse recovery softness factor S = f(di F /dt) parameter: V R = 8V, T j = 125 C 2 Irr S /µs di F /dt Rev.2.2 Page /µs di F /dt 2791

6 9 Max. transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T 1 K/W IDP4E12 ZthJC single pulse D = s t p Rev.2.2 Page

7 Rev.2.2 Page

8 Published by Infineon Technologies G, Bereichs Kommunikation St.MartinStrasse 53, D81541 München Infineon Technologies G 1999 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.2 Page

IDB45E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C

IDB45E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C Fast Switching EmCon Diode Feature 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM

More information

IDB09E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 9 A V F 1.65 V T jmax 150 C

IDB09E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 9 A V F 1.65 V T jmax 150 C Fast Switching EmCon Diode Feature 1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 1200 V I F 9 V F 1.65 V T

More information

IDB30E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C

IDB30E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C Fast Switching EmCon Diode Feature 1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 1200 V I F 30 V F 1.65 V T

More information

Final data. Maximum Ratings Parameter Symbol Value Unit

Final data. Maximum Ratings Parameter Symbol Value Unit SPPN8C3 SPN8C3 Cool MOS Power Transistor V DS 8 V Feature R DS(on).45 Ω New revolutionary high voltage technology Ultra low gate charge I D Periodic avalanche rated Extreme dv/dt rated Ultra low effective

More information

SPW32N50C3. Cool MOS Power Transistor V DS @ T jmax 560 V

SPW32N50C3. Cool MOS Power Transistor V DS @ T jmax 560 V SPW3N5C3 Cool MOS Power Transistor V DS @ T jmax 56 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances

More information

OptiMOS Power-Transistor Product Summary

OptiMOS Power-Transistor Product Summary OptiMOS Power-Transistor Product Summary V DS 55 V R DS(on),max 4) 35 mω Features Dual N-channel Logic Level - Enhancement mode AEC Q11 qualified I D 2 A PG-TDSON-8-4 MSL1 up to 26 C peak reflow 175 C

More information

OptiMOS 3 Power-Transistor

OptiMOS 3 Power-Transistor Type IPD6N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS

More information

CoolMOS TM Power Transistor

CoolMOS TM Power Transistor CoolMOS TM Power Transistor Features New revolutionary high voltage technology Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rated Product

More information

SIPMOS Small-Signal-Transistor

SIPMOS Small-Signal-Transistor SIPMOS Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS V R DS(on),max 3.5 Ω I DSS,min.4 A Available with V GS(th) indicator on reel Pb-free lead plating; RoHS

More information

OptiMOS 3 Power-Transistor

OptiMOS 3 Power-Transistor Type IPD36N4L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS

More information

OptiMOS TM Power-Transistor

OptiMOS TM Power-Transistor Type BSC28N6NS OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target

More information

BAV70... BAV70 BAV70W BAV70S BAV70U. Type Package Configuration Marking BAV70 BAV70S BAV70U BAV70W

BAV70... BAV70 BAV70W BAV70S BAV70U. Type Package Configuration Marking BAV70 BAV70S BAV70U BAV70W BAV7... Silicon Switching Diode For highspeed switching applications Common cathode configuration BAV7S / U: For orientation in reel see package information below Pbfree (RoHS compliant) package ) Qualified

More information

STTH1R04-Y. Automotive ultrafast recovery diode. Features. Description

STTH1R04-Y. Automotive ultrafast recovery diode. Features. Description Automotive ultrafast recovery diode Features Datasheet - production data K SMA STTH1R4AY Table 1. Device summary Symbol Value I F(AV) 1 A V RRM 4 V T j (max) 175 C V F (typ) t rr (typ) A K.9 V 14 ns A

More information

BAT64... BAT64-02W BAT64-02V BAT64-04 BAT64-04W BAT64-05 BAT64-05W BAT64-06W

BAT64... BAT64-02W BAT64-02V BAT64-04 BAT64-04W BAT64-05 BAT64-05W BAT64-06W Silicon Schottky Diodes For low-loss, fast-recovery, meter protection, bias isolation and clamping application Integrated diffused guard ring Low forward voltage Pb-free (RoHS compliant) package Qualified

More information

BAS16... Silicon Switching Diode For high-speed switching applications Pb-free (RoHS compliant) package 1) Qualified according AEC Q101 BAS16S BAS16U

BAS16... Silicon Switching Diode For high-speed switching applications Pb-free (RoHS compliant) package 1) Qualified according AEC Q101 BAS16S BAS16U BAS6... Silicon Switching Diode For highspeed switching applications Pbfree (RoHS compliant) package ) Qualified according AEC Q BAS6 BAS6W BAS6L BAS6V BAS6W BAS63W BAS6S BAS6U BAS67L4! $ # " "!,,,!,,!

More information

STTH2R06. High efficiency ultrafast diode. Features. Description

STTH2R06. High efficiency ultrafast diode. Features. Description STTH2R6 High efficiency ultrafast diode Features Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature Description A K The STTH2R6 uses

More information

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC Rev. 8 18 November 2010 Product data sheet 1. Product profile 1.1 General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package

More information

5SDD 92Z0401. Housingless Welding Diode. I FAVm = 9 244 A I FSM = 60 000 A V TO = 0.780 V Applications r T = 0.031 m. Types.

5SDD 92Z0401. Housingless Welding Diode. I FAVm = 9 244 A I FSM = 60 000 A V TO = 0.780 V Applications r T = 0.031 m. Types. SDD 92Z41 Housingless Welding Diode Properties SDD 92Z41 Key Parameters High forward current capability V RRM = 4 V Low forward and reverse recovery losses I FAVm = 9 244 A I FSM = 6 A V TO =.78 V Applications

More information

HFA15TB60 HFA15TB60-1

HFA15TB60 HFA15TB60-1 HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor

More information

BAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description

BAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description SOT2 Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small SOT2 (TO-26AB) Surface-Mounted

More information

Small Signal Fast Switching Diode

Small Signal Fast Switching Diode Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial

More information

BAS16 series. 1. Product profile. High-speed switching diodes. 1.1 General description. 1.2 Features and benefits. 1.

BAS16 series. 1. Product profile. High-speed switching diodes. 1.1 General description. 1.2 Features and benefits. 1. Rev. 6 4 September 04 Product data sheet. Product profile. General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number Package Configuration

More information

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box

More information

Features Benefits Description TO-247AC (Modified) Absolute Maximum Ratings Parameter Max Units

Features Benefits Description TO-247AC (Modified) Absolute Maximum Ratings Parameter Max Units Bulletin PD -.338 rev. B /4 HEXFRED TM HFA5PB6 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced

More information

logic level for RCD/ GFI/ LCCB applications

logic level for RCD/ GFI/ LCCB applications logic level for RCD/ GFI/ LCCB applications BT68W series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope

More information

STTH3R02QRL. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes DO-15 STTH3R02Q DO-201AD STTH3R02

STTH3R02QRL. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes DO-15 STTH3R02Q DO-201AD STTH3R02 Ultrafast recovery diode Main product characteristics I F(V) 3 V RRM 2 V T j (max) V F (typ) 175 C.7 V K t rr (typ) 16 ns Features and benefits Very low conduction losses Negligible switching losses K

More information

Type Marking Pin Configuration Package BCX41 EKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO

Type Marking Pin Configuration Package BCX41 EKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO BX4 NPN Silicon AF and Switching Transistor For general AF applications High breakdown voltage Low collectoremitter saturation voltage omplementary type: BX4 (PNP) Pbfree (RoHS compliant) package Qualified

More information

PMEG3005EB; PMEG3005EL

PMEG3005EB; PMEG3005EL Rev. 0 29 November 2006 Product data sheet. Product profile. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress

More information

AUIRLR2905 AUIRLU2905

AUIRLR2905 AUIRLU2905 Features dvanced Planar Technology Logic Level Gate Drive Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free,

More information

Smart High-Side Power Switch Four Channels: 4 x 90mΩ Status Feedback

Smart High-Side Power Switch Four Channels: 4 x 90mΩ Status Feedback Smart igh-side Power Switch Four Channels: 4 x 90mΩ Status Feedback Product Summary Operating oltage bb 5.5...40 Active channels one four parallel On-state Resistance R ON 90mΩ 22.5mΩ Nominal load current

More information

PMEG2020EH; PMEG2020EJ

PMEG2020EH; PMEG2020EJ Rev. 04 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for

More information

PMEG3015EH; PMEG3015EJ

PMEG3015EH; PMEG3015EJ Rev. 03 13 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for

More information

STPS5L60. Power Schottky rectifier. Description. Features

STPS5L60. Power Schottky rectifier. Description. Features Power Schottky rectifier Datasheet - production data Description Power Schottky rectifier suited for switch mode power supplies and high frequency inverters. This device is intended for use in low voltage

More information

Fiber Optics. Integrated Photo Detector Receiver for Plastic Fiber Plastic Connector Housing SFH551/1-1 SFH551/1-1V

Fiber Optics. Integrated Photo Detector Receiver for Plastic Fiber Plastic Connector Housing SFH551/1-1 SFH551/1-1V Fiber Optics Integrated Photo Detector Receiver for Plastic Fiber Plastic Connector Housing SFH551/1-1 Features Bipolar IC with open-collector output Digital output, TTL compatible Sensitive in visible

More information

Smart Highside Power Switch

Smart Highside Power Switch Smart ighside Power Switch Reversave Reverse battery protection by self turn on of power MOSFET Features Short circuit protection Current limitation Overload protection Thermal shutdown Overvoltage protection

More information

PMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.

PMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1. Rev. 04 30 December 2008 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for

More information

Smart Highside Power Switch

Smart Highside Power Switch Smart ighside Power Switch Reversave Reverse battery protection by self turn on of power MOSFET Features Short circuit protection Current limitation Overload protection Thermal shutdown Overvoltage protection

More information

Medium power Schottky barrier single diode

Medium power Schottky barrier single diode Rev. 03 17 October 2008 Product data sheet 1. Product profile 1.1 General description Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated

More information

Smart Highside Power Switch

Smart Highside Power Switch PROFET Data sheet BTS 6143 D Smart ighside Power Switch Reversave Reverse battery protection by self turn on of power MOSFET Features Short circuit protection with latch Current limitation Overload protection

More information

MUR1520 MURB1520 MURB1520-1

MUR1520 MURB1520 MURB1520-1 MUR520 MURB520 MURB520- Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 35ns I F(AV) = 5Amp V R = 200V Description/

More information

AUIRFR8405 AUIRFU8405

AUIRFR8405 AUIRFU8405 Features Advanced Process Technology New Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE

More information

Smart High-Side Power Switch BTS716G

Smart High-Side Power Switch BTS716G Smart igh-side Power Switch Ω Product Summary Package Ω Ω P-DSO-20 PG-DSO20 Block Diagram Data Sheet 1 V1.0, 2007-05-13 Smart igh-side Power Switch IN4 control and protection circuit of channel 2 control

More information

logic level for RCD/ GFI/ LCCB applications

logic level for RCD/ GFI/ LCCB applications logic level for RCD/ GFI/ LCCB applications BT68GW GENERL DESCRIPTION QUICK REFERENCE DT Passivated, sensitive gate thyristor in a plastic SYMBOL PRMETER MX. UNIT envelope suitable for surface mounting,

More information

IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery anti-paralleldiode

IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery anti-paralleldiode IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery antiparalleldiode IKWNH3 Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl G C E Highspeedswitchingseriesthirdgeneration

More information

STTH110. High voltage ultrafast rectifier. Description. Features

STTH110. High voltage ultrafast rectifier. Description. Features High voltage ultrafast rectifier Datasheet - production data K Description The STTH110, which is using ST ultrafast high voltage planar technology, is especially suited for free-wheeling, clamping, snubbering,

More information

Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit. f = 50 Hz, t p = 10 ms, T vj = 0 160 C f = 5 Hz, t p = 10 ms,

Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit. f = 50 Hz, t p = 10 ms, T vj = 0 160 C f = 5 Hz, t p = 10 ms, V RSM = 2800 V Rectifier Diode I F(AV)M = 6830 A I F(RMS) = 10730 A I FSM = 87 10 3 A V F0 = 0.8 V r F = 0.05 mw 5SDD 60N2800 Patented free-floating silicon technology Very low on-state losses Optimum

More information

logic level for RCD/ GFI applications

logic level for RCD/ GFI applications logic level for RCD/ GFI applications BT68 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended

More information

8ETH06 8ETH06S 8ETH06-1 8ETH06FP

8ETH06 8ETH06S 8ETH06-1 8ETH06FP Bulletin PD-0746 rev. D 03/03 8ETH06 8ETH06S 8ETH06-8ETH06FP Hyperfast Rectifier Features Hyperfast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating unction Temperature UL E78996

More information

HFA08TB60. Ultrafast, Soft Recovery Diode HEXFRED TM TO-220AC. Bulletin PD -2.341 rev. A 11/00

HFA08TB60. Ultrafast, Soft Recovery Diode HEXFRED TM TO-220AC. Bulletin PD -2.341 rev. A 11/00 Bulletin PD -.34 rev. A / HEXFRED TM HFA8TB6 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced

More information

N-channel enhancement mode TrenchMOS transistor

N-channel enhancement mode TrenchMOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = V Low on-state resistance Fast switching I D = A High thermal cycling performance Low thermal resistance R DS(ON) mω (V GS = V) g s R DS(ON)

More information

Low forward voltage High breakdown voltage Guard-ring protected Hermetically sealed glass SMD package

Low forward voltage High breakdown voltage Guard-ring protected Hermetically sealed glass SMD package Rev. 6 10 September 2010 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed glass SOD80C

More information

Ultrafast, epitaxial rectifier diode in a SOD59 (TO-220AC) plastic package

Ultrafast, epitaxial rectifier diode in a SOD59 (TO-220AC) plastic package TO-220AC 27 May 2015 Product data sheet 1. General description Ultrafast, epitaxial rectifier diode in a SOD59 (TO-220AC) plastic package 2. Features and benefits Fast switching Low thermal resistance

More information

Schottky Rectifier, 1.0 A

Schottky Rectifier, 1.0 A Schottky Rectifier, 1.0 A VS-BQ040-M3 Cathode Anode PRODUCT SUMMARY Package SMB I F(AV) 1.0 A V R 40 V V F at I F 0.38 V I RM 9 ma at 125 C T J max. 150 C Diode variation Single die E AS 3.0 mj FEATURES

More information

40 V, 200 ma NPN switching transistor

40 V, 200 ma NPN switching transistor Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic

More information

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW DESCRIPTION is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed,

More information

High Performance Schottky Rectifier, 3.0 A

High Performance Schottky Rectifier, 3.0 A High Performance Schottky Rectifier, 3. A Cathode Anode SMC PRODUCT SUMMARY Package SMC I F(AV) 3. A V R 4 V V F at I F.46 V I RM 3 ma at 25 C T J max. 5 C Diode variation Single die E AS 6. mj FEATURES

More information

45 V, 100 ma NPN/PNP general-purpose transistor

45 V, 100 ma NPN/PNP general-purpose transistor Rev. 4 18 February 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

More information

N-Channel 40-V (D-S) 175 C MOSFET

N-Channel 40-V (D-S) 175 C MOSFET N-Channel 4-V (D-S) 75 C MOSFET SUP/SUB85N4-4 PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A) 4.4 @ V GS = V 85 a TO-22AB D TO-263 G DRAIN connected to TAB G D S Top View Ordering Information SUP85N4-4

More information

Schottky Rectifier, 1.0 A

Schottky Rectifier, 1.0 A Schottky Rectifier, 1.0 A VS-BQ060PbF Vishay High Power Products FEATURES Small foot print, surface mountable Low forward voltage drop SMB Cathode Anode High frequency operation Guard ring for enhanced

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BT151 series C Thyristors

DISCRETE SEMICONDUCTORS DATA SHEET. BT151 series C Thyristors DISCRETE SEMICONDUCTORS DATA SHEET Product specification April 24 Product specification GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT

More information

High Performance Schottky Rectifier, 1 A

High Performance Schottky Rectifier, 1 A High Performance Schottky Rectifier, A VS-MQNPbF Cathode Anode DO-24AC (SMA) PRODUCT SUMMARY Package DO-24AC (SMA) I F(AV) A V R V V F at I F.78 V I RM ma at 25 C T J max. 5 C Diode variation Single die

More information

N-Channel 60-V (D-S), 175 C MOSFET

N-Channel 60-V (D-S), 175 C MOSFET N-Channel 6-V (D-S), 75 C MOSFET SUP/SUB7N6-4 V (BR)DSS (V) r DS(on) ( ) (A) 6.4 7 a TO-22AB D TO-263 DRAIN connected to TAB G G D S Top View SUP7N6-4 G D S Top View SUB7N6-4 S N-Channel MOSFET Parameter

More information

65 V, 100 ma PNP/PNP general-purpose transistor

65 V, 100 ma PNP/PNP general-purpose transistor Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

More information

30 V, single N-channel Trench MOSFET

30 V, single N-channel Trench MOSFET SOT883B Rev. 1 11 May 212 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN16B-3 (SOT883B) Surface-Mounted

More information

Schottky barrier quadruple diode

Schottky barrier quadruple diode Rev. 3 8 October 2012 Product data sheet 1. Product profile 1.1 General description with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated

More information

10 ma LED driver in SOT457

10 ma LED driver in SOT457 SOT457 in SOT457 Rev. 1 20 February 2014 Product data sheet 1. Product profile 1.1 General description LED driver consisting of resistor-equipped PNP transistor with two diodes on one chip in an SOT457

More information

High Performance Schottky Rectifier, 1.0 A

High Performance Schottky Rectifier, 1.0 A High Performance Schottky Rectifier, 1. A VS-BQ3-M3 Cathode Anode SMB PRODUCT SUMMARY Package SMB I F(AV) 1. A V R 3 V V F at I F.42 V I RM max. 15 ma at 125 C T J max. 15 C Diode variation Single die

More information

BAS70 series; 1PS7xSB70 series

BAS70 series; 1PS7xSB70 series BAS70 series; PS7xSB70 series Rev. 09 January 00 Product data sheet. Product profile. General description in small Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number Package

More information

PDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information

PDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information Green 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI 5 Product Summary I F V R V F MAX (V) I R MAX (ma) (V) (A) @ +25 C @ +25 C 1 5..71.35 Description and Applications This Schottky Barrier Rectifier

More information

TSM2N7002K 60V N-Channel MOSFET

TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 5 @ V GS = 10V 100 60 5.5 @ V GS = 5V 100 Features Low On-Resistance ESD Protection High Speed Switching

More information

SCR, 12 A, 15mA, 500 V, SOT78. Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.

SCR, 12 A, 15mA, 500 V, SOT78. Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package. Rev. 5 2 March 29 Product data sheet 1. Product profile 1.1 General description Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package. 1.2 Features and benefits High reliability

More information

Dual Common-Cathode Ultrafast Plastic Rectifier

Dual Common-Cathode Ultrafast Plastic Rectifier (F,B)6AT thru (F,B)6JT Dual Common-Cathode Ultrafast Plastic Rectifier TO-0AB 6xT PIN PIN 3 PIN CASE 3 TO-63AB ITO-0AB F6xT PIN PIN 3 PIN 3 FEATURES Glass passivated chip junction Ultrafast recovery time

More information

Ultrafast, Soft Recovery Diode (N/C)

Ultrafast, Soft Recovery Diode (N/C) Bulletin PD -060 rev. C /00 HFA06TB0S.. Series HEXFRED TM Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits

More information

Application Note, V1.0, 2008 AN2008-03. Thermal equivalent circuit models. replaces AN2001-05. Industrial Power

Application Note, V1.0, 2008 AN2008-03. Thermal equivalent circuit models. replaces AN2001-05. Industrial Power Application Note, V1.0, 2008 AN2008-03 Thermal equivalent circuit models replaces AN2001-05 Industrial Power Edition 2008-06-16 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies

More information

AUTOMOTIVE GRADE. Orderable Part Number AUIRF7805Q SO-8 Tape and Reel 4000 AUIRF7805QTR

AUTOMOTIVE GRADE. Orderable Part Number AUIRF7805Q SO-8 Tape and Reel 4000 AUIRF7805QTR UTOMOTIVE GRE UIRF7805Q Features dvanced Planar Technology Low On-Resistance Logic Level N Channel MOSFET Surface Mount vailable in Tape & Reel 150 C Operating Temperature Lead-Free, RoHS Compliant utomotive

More information

MCR08B, MCR08M. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS

MCR08B, MCR08M. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS MCR8B, MCR8M Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls,

More information

DATA SHEET. PMEGXX10BEA; PMEGXX10BEV 1 A very low V F MEGA Schottky barrier rectifier DISCRETE SEMICONDUCTORS

DATA SHEET. PMEGXX10BEA; PMEGXX10BEV 1 A very low V F MEGA Schottky barrier rectifier DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 24 Apr 2 24 Jun 4 FEATURES Forward current: A Reverse voltages: 2 V, 3 V, 4 V Very low forward voltage Ultra small and very small plastic SMD package

More information

5STP 30T1800 Old part no. T 989C-3030-18

5STP 30T1800 Old part no. T 989C-3030-18 Phase Control Thyristor Properties 5STP 3T18 Old part no. T 989C-33-18 Key Parameters High operational capability V DRM, V RRM = 1 8 V Possibility of serial and parallel connection I TAVm = 3 18 A Applications

More information

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PINNING - TO220AB PIN CONFIGURATION SYMBOL BTA4 series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a plastic envelope, SYMBOL PARAMETER MAX. MAX. UNIT intended for use in applications requiring high bidirectional transient and

More information

5STP 06T1600 Old part no. T 906C-640-16

5STP 06T1600 Old part no. T 906C-640-16 Phase Control Thyristor Properties 5STP T1 Old part no. T 9C--1 Key Parameters High operational capability V DRM, V RRM = 1 V Possibility of serial and parallel connection I TAVm = 1 A Applications I TSM

More information

5STP 21H4200 Old part no. TV 989-2100-42

5STP 21H4200 Old part no. TV 989-2100-42 Phase Control Thyristor Properties 5STP 1H Old part no. T 989-1- Key Parameters High operational capability DRM, RRM = Possibility of serial and parallel connection I TAm = 19 A Applications I TSM = 3

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET Si30CDS P-Channel 0 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 0 0. at V GS = - 4.5 V - 3. 0.4 at V GS = -.5 V -.7 3.3 nc TO-36 (SOT-3) FEATURES Halogen-free According

More information

CAN bus ESD protection diode

CAN bus ESD protection diode Rev. 04 15 February 2008 Product data sheet 1. Product profile 1.1 General description in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller

More information

60 V, 360 ma N-channel Trench MOSFET. Symbol Parameter Conditions Min Typ Max Unit V DS drain-source T amb = 25 C - - 60 V

60 V, 360 ma N-channel Trench MOSFET. Symbol Parameter Conditions Min Typ Max Unit V DS drain-source T amb = 25 C - - 60 V Rev. 02 29 July 20 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

More information

N-Channel 20-V (D-S) 175 C MOSFET

N-Channel 20-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUD7N-4P PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.37 @ V GS = V 37.6 @ V GS = 4.5 V 9 TO-5 D FEATURES TrenchFET Power MOSFET 75 C Junction Temperature PWM Optimized for

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET Si4DS N-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).4 at V GS = V..67 at V GS = 6 V..9 nc.78 at V GS = 4.5 V.7 FEATURES TrenchFET Power MOSFET % R g Tested

More information

BYT60P-1000 BYT261PIV-1000

BYT60P-1000 BYT261PIV-1000 BY6P-1 BY261PIV-1 FAS RECOVERY RECIFIER DIODES MAJOR PRODUC CHARACERISICS K2 A2 I F(AV) V RRM VF (max) trr (max) FEAURES AND BENEFIS 2 x 6 A 1 V 1.8 V 7 ns K1 A1 BY261PIV-1 VERY LOW REVERSE RECOVERY IME

More information

Standard Recovery Diodes, (Stud Version), 40 A

Standard Recovery Diodes, (Stud Version), 40 A Standard Recovery Diodes, (Stud ersion), 40 A S- FEATURES High surge current capability Stud cathode and stud anode version Leaded version available DO-203AB (DO-5) PRODUCT SUMMARY I F(A) 40 A Package

More information

Schottky Rectifier, 1 A

Schottky Rectifier, 1 A Schottky Rectifier, 1 A BQPbF FEATURES SMB Cathode Anode Small foot print, surface mountable Low forward voltage drop High frequency operation Available RoHS* COMPLIANT Guard ring for enhanced ruggedness

More information

50 V, 180 ma P-channel Trench MOSFET. Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j = 25 C - - -50 V

50 V, 180 ma P-channel Trench MOSFET. Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j = 25 C - - -50 V SOT23 Rev. 1 23 May 211 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

More information

TLI4946. Datasheet TLI4946K, TLI4946-2K, TLI4946-2L. Sense and Control. May 2009

TLI4946. Datasheet TLI4946K, TLI4946-2K, TLI4946-2L. Sense and Control. May 2009 May 2009 TLI4946 High Precision Hall Effect Latches for Industrial and Consumer Applications TLI4946K, TLI4946-2K, TLI4946-2L Datasheet Rev. 1.0 Sense and Control Edition 2009-05-04 Published by Infineon

More information

Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 95 A

Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 95 A Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 95 A 95PF(R)... DO-203AB (DO-5) PRODUCT SUMMARY I F(AV) Package Circuit configuration 95PF(R)...W DO-203AB (DO-5) 95 A DO-203AB (DO-5) Single

More information

I T(AV) off-state voltages. PINNING - TO92 variant PIN CONFIGURATION SYMBOL. 3 anode g

I T(AV) off-state voltages. PINNING - TO92 variant PIN CONFIGURATION SYMBOL. 3 anode g BT9 series GENERL DESCRIPTION QUICK REFERENCE DT Passivated, sensitive gate thyristors in a SYMBOL PRMETER MX. MX. MX. UNIT plastic envelope, intended for use in general purpose switching and phase BT9

More information

STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06 60V

More information

TSM020N03PQ56 30V N-Channel MOSFET

TSM020N03PQ56 30V N-Channel MOSFET PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value Unit V DS 30 V R DS(on) (max) V GS = 10V 2 V GS = 4.5V 3 mω Q

More information

Schottky Rectifier, 100 A

Schottky Rectifier, 100 A Schottky Rectifier, A VS-BGQ Cathode Anode PowerTab PRODUCT SUMMARY Package PowerTab I F(AV) A V R V V F at I F 0.82 V I RM 180 ma at 125 C T J max. 175 C Diode variation Single die E AS 9 mj FEATURES

More information

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated

More information

STN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description

STN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET Features Type V DSS (@Tjmax) Exceptional dv/dt capability Avalanche rugged technology 100% avalanche tested R DS(on) max STN3NF06L 60 V < 0.1

More information

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET

More information

STP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

STP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06FP 60V

More information