CJZM718 N-ch MOSFET and PNP Transistor

Transcription

1 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3 2-8L-I Plastic-Encapsulate Transistors-MOSFETS CJZM718 N-ch MOSFEnd PNP Transistor V (BR)DSS /BVCEO R DS(on) MAX I D /.7Ω@4.5V 2V.5A.85Ω@2.5V -25V / -3A DFNWB3 2-8L-I FEATURE High DC current gain Low Threshold Small package DFNWB3x2-8L-I Including a CJP718 transistor and a CJ112 MOSFET independently in a package MARKING: APPLICATION Charging circuit Other power management in portable equipments Equivalent Circuit C 8 C 7 S 6 G 5 front back C E B D MAXIMUM RATINGS ( unless otherwise noted) Symbol Parameter Value Unit PNP Transistor V CBO Collector-Base Voltage -25 V V CEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -7.5 V Collector Current -3 A N-MOSFET V DS Drain-Source Voltage 2 V Gate-Source Voltage ±6 V I D Drain Current -Continuous.5 A I DM Drain Current - Pulse 2 A Power Dissipation, Temperature and Thermal Resistance P D Power Dissipation 1 W R θja Thermal Resistance from Junction to Ambient (note1) 175 /W Thermal Resistance from Junction to Ambient (note2) 11 /W T j Junction Temperature 15 T stg Storage Temperature -55~+15 T L Lead Temperature C,Aug,216

2 MOSFET ELECTRICAL CHARACTERISTICS PNP TRANSISTOR ELECTRICAL CHARACTERISTICS ( unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO =-.1mA, I E = -25 V Collector-emitter breakdown voltage V (BR)CEO =-1mA, I B = -25 V Emitter-base breakdown voltage V (BR)EBO I E =-.1mA, = -7.5 V Collector cut-off current BO V CB =-2V, I E = -25 na Emitter cut-off current I EBO V EB =V, = -25 na V CE =-2V, =-.1A DC current gain h FE V CE =-2V, =-.1A V CE =-2V, =-2A 15 V CE =-2V, =A 15 =-.1A, I B =-1mA -3 mv =-1A, I B =-2mA -22 mv Collector-emitter saturation voltage V CE(sat) =-1.5A, I B =-5mA -25 mv =-2.5A, I B =-15mA -35 mv =-3.5A, I B =-35mA -38 mv Base-emitter saturation voltage V BE(sat) =-3.5A, I B =-35mA V Base-emitter voltage V BE(on) V CE =-2V, =-3.5A -.95 V Transition frequency f T V CE =-1V, =-5mA, f=mhz 15 MHz N-ch MOSFET ELECTRICAL CHARACTERISTICS ( unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS VGS =V, ID=25µA 2 V Zero gate voltage drain current IDSS VDS =16V, VGS = V.1 µa Gate-body leakage current IGSS VGS =±4.5V, VDS = V ±1 µa Gate threshold voltage VGS(th) VDS =, ID =25µA V Drain-source on-resistance RDS(on) VGS =4.5V, ID =.6A.7 Ω VGS =2.5V, ID =.5A.85 Ω Forward tranconductance gfs VDS =1V, ID =.4A.5 S Diode forward voltage V SD DYNAMIC PARAMETERS (note 3) I S =.15A, VGS = V 1.2 V Input Capacitance C iss pf Reverse Transfer Capacitance C rss 12 pf Output Capacitance C oss VDS =16V, VGS =V, f =1MHz 16 pf SWITCHING PARAMETERS (note 3) Turn-on delay time t d(on) 5 ns Turn-on rise time t r V DD =1V, V GEN =4.5V, R G =1Ω, 5 ns Turn-off delay time t d(off) R L =47Ω, ID=.2A 25 ns Turn-off fall time t f 11 ns Total Gate Charge Q g 75 nc VDS =1V, VGS =4.5V, Gate-Source Charge Q gs 75 nc ID =.25A Gate-Drain Charge 225 nc Q gd Note: 1. When mounted on a minimum pad. 2. When mounted on 1 in 2 of 2oz copper board. 3. These parameters have no way to verify. Pulse test: pulse width μs, duty cycle 2% 2 C,Aug,216

3 PNP Transistor Static Characteristic h FE uA -81uA -72uA 3uA -54uA -45uA -36uA -27uA COMMON EMITTER -18uA DC CURRENT GAIN h FE = o C V CE = -2V -.5 I B =-9uA COLLECTOR-EMITTER VOLTAGE V CE V CE =-2V V BE -1.4 β=1 V BEsat = o C BASE-EMITTER SATURATION VOLTAGE V BEsat = -.4-1E BASE-EMITTER VOLTAGE V BE -.2-1E V CEsat -3 β=5 V CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat β=5 β=1 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat = -1E-3-1E E C,Aug,216

4 PNP Transistor f T C ob / C ib V CB / V EB f=1mhz I E = / = TRANSITION FREQUENCY f T (MHz) CAPACITANCE C (pf) C ib C ob 5 V CE =-1V REVERSE BIAS VOLTAGE V 1.2 P c COLLECTOR POWER DISSIPATION P c (W) AMBIENT TEMPERATURE ( ) 4 C,Aug,216

5 N-channel Characteristics DRAIN CURRENT I D Output Characteristics 5.5V 4.5V 3.5V 2.5V DRAIN CURRENT I D 4 V DS =16V Transfer Characteristics = 1 =1.5V DRAIN TO SOURCE VOLTAGE V DS GATE TO SOURCE VOLTAGE 6 R DS(ON) I D 45 R DS(ON) ON-RESISTANCE R DS(ON) (mω) 4 =2.5V =4.5V ON-RESISTANCE R DS(ON) (mω) 4 35 I D =.6A DRAIN CURRENT I D GATE TO SOURCE VOLTAGE I S V SD 1. Threshold Voltage.95 SOURCE CURRENT I S 1 1 THRESHOLD VOLTAGE V TH I D =25uA SOURCE TO DRAIN VOLTAGE V SD JUNCTION TEMPERATURE T J ( ) 5 C,Aug,216

6 DFNWB3X2-8L-I Package Outline Dimensions N4 N5 N1 N8 TOP VIEW BOTTOM VIEW SIDE VIEW DFNWB3X2-8L-I 6 C,Aug,216

7 DFNWB3X2-8L Tape and Reel 7 C,Aug,216