2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS THERMAL CHARACTERISTICS

Save this PDF as:
 WORD  PNG  TXT  JPG

Size: px
Start display at page:

Download "2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS THERMAL CHARACTERISTICS"

Transcription

1 General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 6 Vdc Emitter Base Voltage V EBO 6. Vdc Collector Current Continuous I C 6 madc Total Device T A = 25 C Derate above 25 C Total Device T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D 625 P D T J, T stg 55 to +15 mw mw/ C W mw/ C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient R JA 2 C/W Thermal Resistance, JunctiontoCase R JC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. C TO92 CASE 29 STYLE 1 2 BASE COLLECTOR 3 1 EMITTER STRAIGHT LEAD BULK PACK MARKING DIAGRAM 2N 441 AYWW BENT LEAD TAPE & REEL AMMO PACK 2N441 = Device Code A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2 February, 2 Rev. 4 1 Publication Order Number: 2N441/D

2 ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) (I C = 1. madc, I B = ) V (BR)CEO 4 Vdc CollectorBase Breakdown Voltage (I C =.1 madc, I E = ) V (BR)CBO 6 Vdc EmitterBase Breakdown Voltage (I E =.1 madc, I C = ) V (BR)EBO 6. Vdc Base Cutoff Current (V CE = 35 Vdc, V EB =.4 Vdc) I BEV.1 Adc Collector Cutoff Current (V CE = 35 Vdc, V EB =.4 Vdc) I CEX.1 Adc ON CHARACTERISTICS (Note 1) DC Current Gain (I C =.1 madc, V CE = 1. Vdc) (I C = 1. madc, V CE = 1. Vdc) (I C = madc, V CE = 1. Vdc) (I C = 15 madc, V CE = 1. Vdc) (I C = 5 madc, V CE = Vdc) h FE CollectorEmitter Saturation Voltage (I C = 15 madc, I B = 15 madc) (I C = 5 madc, I B = 5 madc) V CE(sat).4.75 Vdc BaseEmitter Saturation Voltage (I C = 15 madc, I B = 15 madc) (I C = 5 madc, I B = 5 madc) V BE(sat) Vdc SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = 2 madc, V CE = Vdc, f = MHz) f T 25 MHz CollectorBase Capacitance (V CB = Vdc, I E =, f = 1. MHz) C cb 6.5 pf EmitterBase Capacitance (V EB =.5 Vdc, I C =, f = 1. MHz) C eb 3 pf Input Impedance (I C = 1. madc, V CE = Vdc, f = 1. khz) h ie k Voltage Feedback Ratio (I C = 1. madc, V CE = Vdc, f = 1. khz) h re.1 8. X 4 SmallSignal Current Gain (I C = 1. madc, V CE = Vdc, f = 1. khz) h fe 4 5 Output Admittance (I C = 1. madc, V CE = Vdc, f = 1. khz) h oe 1. 3 mhos SWITCHING CHARACTERISTICS Delay Time (V CC = 3 Vdc, V BE = Vdc, t d 15 ns Rise Time I C = 15 madc, I B1 = 15 madc) t r 2 ns Storage Time (V CC = 3 Vdc, I C = 15 madc, t s 225 ns Fall Time I B1 = I B2 = 15 madc) t f 3 ns 1. Pulse Test: Pulse Width 3 s, Duty Cycle %. ORDERING INFORMATION Device Package Shipping 2N441 TO92 5 Units / Bulk 2N441G TO92 (PbFree) 5 Units / Bulk 2N441RLRA TO92 2 / Tape & Reel 2N441RLRAG 2N441RLRMG TO92 (PbFree) TO92 (PbFree) 2 / Tape & Reel 2 / Tape & Ammo Box 2N441RLRP TO92 2 / Tape & Ammo Box 2N441RLRPG TO92 (PbFree) 2 / Tape & Ammo Box For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. 2

3 SWITCHING TIME EQUIVALENT TEST CIRCUITS +16 V 1. to s, DUTY CYCLE % + 3 V V 1. to s, DUTY CYCLE % + 3 V 2 - V < ns 1. k C S * < pf -14 V < 2 ns 1. k C S * < pf Scope rise time < 4. ns - 4. V *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. TurnOn Time Figure 2. TurnOff Time TRANSIENT CHARACTERISTICS 25 C C CAPACITANCE (pf) C obo Q, CHARGE (nc) V CC = 3 V I C /I B = Q T 3. C cb.3.2 Q A REVERSE VOLTAGE (VOLTS) Figure 3. Capacitances Figure 4. Charge Data 7 5 I C /I B = 7 5 t r V CC = 3 V I C /I B = t, TIME (ns) 3 2 t V CC = 3 V t V CC = V 3 t V EB = V t V EB = 2 t, TIME (ns) t f Figure 5. TurnOn Time Figure 6. Rise and Fall Times 3

4 ts, STORAGE TIME (ns) Figure 7. Storage Time t s = t s - 1/8 t f I B1 = I B2 I C /I B = to 2 tf, FALL TIME (ns) I C /I B = I C /I B = Figure 8. Fall Time V CC = 3 V I B1 = I B2 SMALLSIGNAL CHARACTERISTICS NOISE FIGURE V CE = Vdc, T A = 25 C; Bandwidth = 1. Hz NF, NOISE FIGURE (db) I C = 1. ma, R S = 15 I C = 5 A, R S = 2 I C = A, R S = k I C = 5 A, R S = 4. k R S = OPTIMUM RS = SOURCE RS = RESISTANCE NF, NOISE FIGURE (db) f = 1. khz I C = 5 A I C = A I C = 5 A I C = 1. ma f, FREQUENCY (khz) Figure 9. Frequency Effects k k k k 2 k 5 k k R S, SOURCE RESISTANCE (OHMS) Figure. Source Resistance Effects 4

5 h PARAMETERS V CE = Vdc, f = 1. khz, T A = 25 C This group of graphs illustrates the relationship between h fe and other h parameters for this series of transistors. To obtain these curves, a highgain and a lowgain unit were selected from the 2N441 lines, and the same units were used to develop the correspondingly numbered curves on each graph. hfe, CURRENT GAIN N441 UNIT 1 2N441 UNIT 2 h ie, INPUT IMPEDANCE (OHMS) 5 k 2 k k k k 1. k 2N441 UNIT 1 2N441 UNIT Figure 11. Current Gain Figure 12. Input Impedance h, VOLTAGE FEEDBACK RATIO (X -4 re ) N441 UNIT 1 2N441 UNIT h oe, OUTPUT ADMITTANCE ( mhos) N441 UNIT 1 2N441 UNIT 2 Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance 5

6 STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN V CE = 1. V V CE = V T J = 125 C 25 C - 55 C Figure 15. DC Current Gain V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) I C = 1. ma T J = 25 C ma ma 5 ma I B, BASE CURRENT (ma) Figure 16. Collector Saturation Region 1..8 T J = 25 C V I C /I B = +.5 VC for V CE(sat) VOLTAGE (VOLTS).6.4 V V CE = V COEFFICIENT (mv/ C) V I C /I B = - VB for V BE Figure 17. On Voltages Figure 18. Temperature Coefficients 6

7 PACKAGE DIMENSIONS TO92 (TO226) CASE 2911 ISSUE AM R A N B STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A B C D X X D G H G J H J K V C L N SECTION XX R N V P R T SEATING PLANE P G A X X V 1 B K C N BENT LEAD TAPE & REEL AMMO PACK D J SECTION XX NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS DIM MIN MAX A B C D.4.54 G J.39.5 K N P R V STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your loca Sales Representative 2N441/D

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS 2N396 General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V

More information

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS N393, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 4 Vdc CollectorBase Voltage V CBO 6 Vdc EmitterBase

More information

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60-80 VOLTS

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60-80 VOLTS 2N6388 is a Preferred Device Plastic MediumPower Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500

More information

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features NTMS9N Power MOSFET 3 V, 7 A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices

More information

LC03-6R2G. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces. SO-8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 2 kw PEAK POWER 6 VOLTS

LC03-6R2G. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces. SO-8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 2 kw PEAK POWER 6 VOLTS Low Capacitance Surface Mount TVS for High-Speed Data terfaces The LC3- transient voltage suppressor is designed to protect equipment attached to high speed communication lines from ESD, EFT, and lighting.

More information

ESD7484. 4-Line Ultra-Large Bandwidth ESD Protection

ESD7484. 4-Line Ultra-Large Bandwidth ESD Protection 4-Line Ultra-Large Bandwidth ESD Protection Functional Description The ESD7484 chip is a monolithic, application specific discrete device dedicated to ESD protection of the HDMI connection. It also offers

More information

1N5820, 1N5821, 1N5822. Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS

1N5820, 1N5821, 1N5822. Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS 1N58, 1N5821, 1N5822 1N58 and 1N5822 are Preferred Devices Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features

More information

P D 215 1.25 Operating Junction Temperature T J 200 C Storage Temperature Range T stg 65 to +150 C

P D 215 1.25 Operating Junction Temperature T J 200 C Storage Temperature Range T stg 65 to +150 C SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold

More information

MC14001B Series. B Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B

MC14001B Series. B Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B MC4B Series BSuffix Series CMOS Gates MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure

More information

MC34063A, MC33063A, NCV33063A. 1.5 A, Step Up/Down/ Inverting Switching Regulators

MC34063A, MC33063A, NCV33063A. 1.5 A, Step Up/Down/ Inverting Switching Regulators MC3403A, MC3303A, NCV3303A. A, StepUp/Down/ Inverting Switching Regulators The MC3403A Series is a monolithic control circuit containing the primary functions required for DCtoDC converters. These devices

More information

MC10SX1190. Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit

MC10SX1190. Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit Description The MC10SX1190 is a differential receiver, differential transmitter specifically designed to drive coaxial cables. It incorporates

More information

CS8481. 3.3 V/250 ma, 5.0 V/100 ma Micropower Low Dropout Regulator with ENABLE

CS8481. 3.3 V/250 ma, 5.0 V/100 ma Micropower Low Dropout Regulator with ENABLE 3.3 /250 ma, 5.0 /100 ma Micropower Low Dropout Regulator with The CS8481 is a precision, dual Micropower linear voltage regulator. The switched 3.3 primary output ( OUT1 ) supplies up to 250 ma while

More information

NUP4106. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces SO 8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 500 WATTS PEAK POWER 3.

NUP4106. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces SO 8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 500 WATTS PEAK POWER 3. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces The NUP0 transient voltage suppressor is designed to protect equipment attached to high speed communication lines from ESD and lightning.

More information

STF202-22. USB Filter with ESD Protection

STF202-22. USB Filter with ESD Protection STF202-22 USB Filter with ESD Protection This device is designed for applications requiring Line Termination, EMI Filtering and ESD Protection. It is intended for use in upstream USB ports, ellular phones,

More information

AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor

AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor AT- Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Description Avago s AT- is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT- is housed in

More information

ULN2803A ULN2804A OCTAL PERIPHERAL DRIVER ARRAYS

ULN2803A ULN2804A OCTAL PERIPHERAL DRIVER ARRAYS Order this document by ULN283/D The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry (such as TTL, CMOS or

More information

LOW POWER SCHOTTKY. http://onsemi.com GUARANTEED OPERATING RANGES ORDERING INFORMATION

LOW POWER SCHOTTKY. http://onsemi.com GUARANTEED OPERATING RANGES ORDERING INFORMATION The TTL/MSI SN74LS151 is a high speed 8-input Digital Multiplexer. It provides, in one package, the ability to select one bit of data from up to eight sources. The LS151 can be used as a universal function

More information

MTD3055VT4. http://onsemi.com. MAXIMUM RATINGS (T C = 25 C unless otherwise noted) MARKING DIAGRAMS ORDERING INFORMATION. R DS(on) TYP 60 V 100 m

MTD3055VT4. http://onsemi.com. MAXIMUM RATINGS (T C = 25 C unless otherwise noted) MARKING DIAGRAMS ORDERING INFORMATION. R DS(on) TYP 60 V 100 m MTD55V Preferred Device Power MOSFET Amps, 6 Volts NChannel This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching

More information

DISCRETE SEMICONDUCTORS DATA SHEET

DISCRETE SEMICONDUCTORS DATA SHEET DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 23 2001 Oct 10 FEATURES High current (max. 1 A) Low voltage (max. 80 V). APPLICATIONS Audio and video amplifiers. PINNING

More information

LOW POWER NARROWBAND FM IF

LOW POWER NARROWBAND FM IF Order this document by MC336B/D The MC336B includes an Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute Switch. This device is designed for

More information

AND8433/D. Using ON Semiconductor Constant Current Regulator (CCR) Devices in AC Applications APPLICATION NOTE

AND8433/D. Using ON Semiconductor Constant Current Regulator (CCR) Devices in AC Applications APPLICATION NOTE Using ON Semiconductor Constant Current Regulator (CCR) Devices in AC Applications Introduction This update includes additional information on 220 V ac lighting circuits with the addition of ON Semiconductors

More information

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection CNY7 Optocoupler, Phototransistor FEATURES Isolation test voltage 5 V RMS A 6 B Long term stability i79 C NC 5 C E Industry standard dual-in-line package Lead (Pb-free component Component in accordance

More information

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 2SA12 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA12 Power Amplifier Applications Power Switching Applications Unit: mm Low Collector saturation voltage: V CE (sat) =.5 V (max) (I C

More information

AND8365/D. 125 kbps with AMIS-4168x APPLICATION NOTE

AND8365/D. 125 kbps with AMIS-4168x APPLICATION NOTE 125 kbps with AMIS-4168x Introduction Question Is it possible to drive 125kB with the AMIS 41682? Please consider all possible CAN bit timings (TSEG1, TSEG2, SJW), a capacitive load at each can pin about

More information

Spread Spectrum Clock Generator

Spread Spectrum Clock Generator Spread Spectrum Clock Generator Features Generates a 1x (PCS3P5811), x (PCS3P581) and 4x() low EMI spread spectrum clock of the input frequency Provides up to 15dB of EMI suppression Input Frequency: 4MHz

More information

LOW POWER SCHOTTKY. http://onsemi.com GUARANTEED OPERATING RANGES ORDERING INFORMATION PLASTIC N SUFFIX CASE 648 SOIC D SUFFIX CASE 751B

LOW POWER SCHOTTKY. http://onsemi.com GUARANTEED OPERATING RANGES ORDERING INFORMATION PLASTIC N SUFFIX CASE 648 SOIC D SUFFIX CASE 751B The SN74LS47 are Low Power Schottky BCD to 7-Segment Decoder/ Drivers consisting of NAND gates, input buffers and seven AND-OR-INVERT gates. They offer active LOW, high sink current outputs for driving

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BFQ34 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DISCRETE SEMICONDUCTORS DATA SHEET. BFQ34 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14 DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC4 September 995 DESCRIPTION PINNING NPN transistor encapsulated in a 4 lead SOTA envelope with a ceramic cap. All leads are isolated

More information

BD238. Low voltage PNP power transistor. Features. Applications. Description. Low saturation voltage PNP transistor

BD238. Low voltage PNP power transistor. Features. Applications. Description. Low saturation voltage PNP transistor Low voltage PNP power transistor Features Low saturation voltage PNP transistor Applications Audio, power linear and switching applications Description The device is manufactured in planar technology with

More information

BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors

BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors BD241A BD241C NPN power transistors Features. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with

More information

MC33064DM 5 UNDERVOLTAGE SENSING CIRCUIT

MC33064DM 5 UNDERVOLTAGE SENSING CIRCUIT Order this document by MC3464/D The MC3464 is an undervoltage sensing circuit specifically designed for use as a reset controller in microprocessor-based systems. It offers the designer an economical solution

More information

SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS

SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS 1N5817 and 1N5819 are Preferred Devices... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features chrome barrier metal, epitaxial construction

More information

Optocoupler, Phototransistor Output, With Base Connection

Optocoupler, Phototransistor Output, With Base Connection IL/ IL2/ IL5 Optocoupler, Phototransistor Output, With Base Connection Features Current Transfer Ratio (see order information) Isolation Test Voltage 5300 V RMS Lead-free component Component in accordance

More information

PHOTOTRANSISTOR OPTOCOUPLERS

PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2E MCT20 MCT27 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MCT2XXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low

More information

TSM2N7002K 60V N-Channel MOSFET

TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 5 @ V GS = 10V 100 60 5.5 @ V GS = 5V 100 Features Low On-Resistance ESD Protection High Speed Switching

More information

AND8336. Design Examples of On Board Dual Supply Voltage Logic Translators. Prepared by: Jim Lepkowski ON Semiconductor. http://onsemi.

AND8336. Design Examples of On Board Dual Supply Voltage Logic Translators. Prepared by: Jim Lepkowski ON Semiconductor. http://onsemi. Design Examples of On Board Dual Supply Voltage Logic Translators Prepared by: Jim Lepkowski ON Semiconductor Introduction Logic translators can be used to connect ICs together that are located on the

More information

BUX48 High Power Bipolar Transistor

BUX48 High Power Bipolar Transistor High oltage Switching Features: Collector-Emitter sustaining voltage- CEO(sus) = 400 (Minimum) - BUX48 = 450 (Minimum) -. Collector-Emitter saturation voltage- CE(sat) = 1.5 (Maximum) at I C = 10A for

More information

Y.LIN ELECTRONICS CO.,LTD.

Y.LIN ELECTRONICS CO.,LTD. Features Current transfer ratio (CTR 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up to +110 C Compact

More information

NCP1090GEVB, NCP1094GEVB. Power-over-Ethernet PD Interface Evaluation Board User's Manual EVAL BOARD USER S MANUAL. http://onsemi.

NCP1090GEVB, NCP1094GEVB. Power-over-Ethernet PD Interface Evaluation Board User's Manual EVAL BOARD USER S MANUAL. http://onsemi. NCP1090GEVB, NCP1094GEVB Power-over-Ethernet PD Interface Evaluation Board User's Manual Introduction The NCP1090GEVB and NCP1094GEVB evaluation boards are designed to showcase the features of the NCP109x

More information

AND9190/D. Vertical Timing Optimization for Interline CCD Image Sensors APPLICATION NOTE

AND9190/D. Vertical Timing Optimization for Interline CCD Image Sensors APPLICATION NOTE Vertical Timing Optimization for Interline CCD Image Sensors APPLICATION NOTE Introduction This application note applies to the ON Semiconductor Interline CCD Image Sensors listed in Table 1. On these

More information

NCP392C NCP392C GND. Figure 1. Typical Application Circuit FUNCTIONAL BLOCK DIAGRAM VREF OVLO OVLO TSD ACOK. Figure 2. Functional Block Diagram

NCP392C NCP392C GND. Figure 1. Typical Application Circuit FUNCTIONAL BLOCK DIAGRAM VREF OVLO OVLO TSD ACOK. Figure 2. Functional Block Diagram Adjustable Front End Overvoltage Protection Controller with Protected Vbus Output The NCP392C is an overvoltage front end protection controller and is able to disconnect the systems from its output pin

More information

AND8480/D. CrM Buck LED Driver Evaluation Board APPLICATION NOTE

AND8480/D. CrM Buck LED Driver Evaluation Board APPLICATION NOTE CrM Buck LED Driver Evaluation Board Prepared by: Fabien Franc ON Semiconductor Introduction This document describes the CrM Buck LED driver evaluation board. This board provides a step down converter

More information

STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT

STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT Table 1: General Features STGW40NC60V 600 V < 2.5 V 50 A HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY

More information

LM134-LM234-LM334. Three terminal adjustable current sources. Features. Description

LM134-LM234-LM334. Three terminal adjustable current sources. Features. Description Three terminal adjustable current sources Features Operates from 1V to 40V 0.02%/V current regulation Programmable from 1µA to 10mA ±3% initial accuracy Description The LM134/LM234/LM334 are 3-terminal

More information

K817P/ K827PH/ K847PH. Optocoupler with Phototransistor Output. Vishay Semiconductors. Description. Applications. Features.

K817P/ K827PH/ K847PH. Optocoupler with Phototransistor Output. Vishay Semiconductors. Description. Applications. Features. Optocoupler with Phototransistor Output Description The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16 lead plastic

More information

NCV8184. Micropower 70 ma Low Dropout Tracking Regulator/Line Driver

NCV8184. Micropower 70 ma Low Dropout Tracking Regulator/Line Driver Micropower 7 ma Low Dropout Tracking Regulator/Line Driver The NCV884 is a monolithic integrated low dropout tracking voltage regulator designed to provide an adjustable buffered output voltage that closely

More information

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 GT6J2 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT6J2 Current Resonance Inverter Switching Application Unit: mm Enhancement mode type High speed : t f =.6 μs (typ.) (I C = 6A) Low

More information

BUX48/48A BUV48A/V48AFI

BUX48/48A BUV48A/V48AFI BUX48/48A BU48A/48AFI HIGH POWER NPN SILICON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH OLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS SWITCH MODE

More information

NCP707. 200 ma, Very-Low Quiescent Current, I Q 25 A, Low Noise, Low Dropout Regulator

NCP707. 200 ma, Very-Low Quiescent Current, I Q 25 A, Low Noise, Low Dropout Regulator NCP77 2 ma, Very-Low Quiescent Current, I Q 25 A, Low Noise, Low Dropout Regulator The NCP77 is 2 ma LDO that provides the engineer with a very stable, accurate voltage with very low noise suitable for

More information

CM1402. SIM Card EMI Filter Array with ESD Protection

CM1402. SIM Card EMI Filter Array with ESD Protection SIM ard EMI Filter Array with ESD Protection Product Description The M1402 is an EMI filter array with ESD protection, which integrates three pi filters ( R ) and two additional channels of ESD protection.

More information

(250 Volts Peak) SEMICONDUCTOR TECHNICAL DATA

(250 Volts Peak) SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MOC00/D (0 Volts Peak) The MOC00 Series consists of gallium arsenide infrared emitting diodes, optically coupled to silicon bilateral switch and are

More information

Freescale Semiconductor. Integrated Silicon Pressure Sensor. On-Chip Signal Conditioned, Temperature Compensated and Calibrated MPX4080D.

Freescale Semiconductor. Integrated Silicon Pressure Sensor. On-Chip Signal Conditioned, Temperature Compensated and Calibrated MPX4080D. Freescale Semiconductor Integrated Silicon Pressure Sensor + On-Chip Signal Conditioned, Temperature Compensated and Calibrated The series piezoresistive transducer is a state-of-the-art monolithic silicon

More information

LOW POWER FM TRANSMITTER SYSTEM

LOW POWER FM TRANSMITTER SYSTEM Order this document by MC28/D MC28 is a onechip FM transmitter subsystem designed for cordless telephone and FM communication equipment. It includes a microphone amplifier, voltage controlled oscillator

More information

Handling Freescale Pressure Sensors

Handling Freescale Pressure Sensors Freescale Semiconductor Application Note Rev 3, 11/2006 Handling Freescale Pressure by: William McDonald INTRODUCTION Smaller package outlines and higher board densities require the need for automated

More information

CS8182. Micropower 200 ma Low Dropout Tracking Regulator/Line Driver

CS8182. Micropower 200 ma Low Dropout Tracking Regulator/Line Driver Micropower 2 m Low Dropout Tracking Regulator/Line Driver The is a monolithic integrated low dropout tracking regulator designed to provides an adjustable buffered output voltage that closely tracks (±1

More information

LM78XX Series Voltage Regulators

LM78XX Series Voltage Regulators LM78XX Series Voltage Regulators General Description Connection Diagrams The LM78XX series of three terminal regulators is available with several fixed output voltages making them useful in a wide range

More information

PERFORMANCE SPECIFICATION SHEET

PERFORMANCE SPECIFICATION SHEET The documentation and process conversion measures necessary to comply with this document shall be completed by 13 February 2014. INCH-POUND MIL-PRF-19500/538G 13 December 2013 SUPERSEDING MIL-PRF-19500/538F

More information

AND8132/D. Performance Improvements to the NCP1012 Evaluation Board APPLICATION NOTE

AND8132/D. Performance Improvements to the NCP1012 Evaluation Board APPLICATION NOTE Performance Improvements to the NCP0 Evaluation Board Prepared by: Bc. Jan Grulich EMEA Application Lab SCG CDC Roznov, Czech Republic APPLICATION NOTE This application note uses the standard NCP0 evaluation

More information

LC898300XA. Functions Automatic adjustment to the individual resonance frequency Automatic brake function Initial drive frequency adjustment function

LC898300XA. Functions Automatic adjustment to the individual resonance frequency Automatic brake function Initial drive frequency adjustment function Ordering number : A2053 CMOS LSI Linear Vibrator Driver IC http://onsemi.com Overview is a Linear Vibrator Driver IC for a haptics and a vibrator installed in mobile equipments. The best feature is it

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MPX5050/D The MPX5050 series piezoresistive transducer is a state of the art monolithic silicon pressure sensor designed for a wide range of applications,

More information

CA723, CA723C. Voltage Regulators Adjustable from 2V to 37V at Output Currents Up to 150mA without External Pass Transistors. Features.

CA723, CA723C. Voltage Regulators Adjustable from 2V to 37V at Output Currents Up to 150mA without External Pass Transistors. Features. CA73, CA73C Data Sheet April 1999 File Number 788. Voltage Regulators Adjustable from V to 37V at Output Currents Up to 1mA without External Pass Transistors The CA73 and CA73C are silicon monolithic integrated

More information

ULN2801A, ULN2802A, ULN2803A, ULN2804A

ULN2801A, ULN2802A, ULN2803A, ULN2804A ULN2801A, ULN2802A, ULN2803A, ULN2804A Eight Darlington array Datasheet production data Features Eight Darlington transistors with common emitters Output current to 500 ma Output voltage to 50 V Integral

More information

AND9015. A Solution for Peak EMI Reduction with Spread Spectrum Clock Generators APPLICATION NOTE. Prepared by: Apps Team, BIDC ON Semiconductor

AND9015. A Solution for Peak EMI Reduction with Spread Spectrum Clock Generators APPLICATION NOTE. Prepared by: Apps Team, BIDC ON Semiconductor A Solution for Peak EMI Reduction with Spread Spectrum Clock Generators Prepared by: Apps Team, BIDC ON Semiconductor APPLICATION NOTE Introduction This application note will outline Spread Spectrum Clock

More information

Transmissive Optical Sensor with Phototransistor Output

Transmissive Optical Sensor with Phototransistor Output TCST11. up to TCST23. Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face

More information

S112-XHS. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information

S112-XHS. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information Description Features The S112-X is a bi-directional, single-pole, single-throw, normally open multipurpose solid-state relay. The circuit is composed of one input IR LED with a series limiting resistor

More information

EVERSPIN s New 2mm Exposed Pad DFN Package Meets Both SOIC-8 and DFN8 PCB Layouts

EVERSPIN s New 2mm Exposed Pad DFN Package Meets Both SOIC-8 and DFN8 PCB Layouts EVERSPIN s New 2mm Exposed Pad DFN Package Meets Both SOIC-8 and DFN8 PCB Layouts This Application Note is to inform Everspin customers that a new, DFN8 package with a 2mm bottom exposed pad has been added

More information

(600 Volts Peak) SEMICONDUCTOR TECHNICAL DATA

(600 Volts Peak) SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MOC0/D (00 Volts Peak) The MOC0, MOC02 and MOC0 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon

More information

LM381 LM381A Low Noise Dual Preamplifier

LM381 LM381A Low Noise Dual Preamplifier LM381 LM381A Low Noise Dual Preamplifier General Description The LM381 LM381A is a dual preamplifier for the amplification of low level signals in applications requiring optimum noise performance Each

More information

BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor

BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor Features Switching and Amplifier High-oltage: BC546, CEO = 65 Low-Noise: BC549, BC550 Complement to BC556, BC557, BC558, BC559, and

More information

BD135 / 137 / 139 NPN Epitaxial Silicon Transistor

BD135 / 137 / 139 NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features Complement to BD136, BD138 and BD140 respectively Applications Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base August

More information

LM1596 LM1496 Balanced Modulator-Demodulator

LM1596 LM1496 Balanced Modulator-Demodulator LM1596 LM1496 Balanced Modulator-Demodulator General Description The LM1596 LM1496 are doubled balanced modulator-demodulators which produce an output voltage proportional to the product of an input (signal)

More information

MC100LVEP34. 2.5V / 3.3V ECL 2, 4, 8 Clock Generation Chip

MC100LVEP34. 2.5V / 3.3V ECL 2, 4, 8 Clock Generation Chip 2.5V / 3.3V ECL 2, 4, 8 Clock Generation Chip The MC00LVEP34 is a low skew 2, 4, 8 clock generation chip designed explicitly for low skew clock generation applications. The internal dividers are synchronous

More information

NOT RECOMMENDED FOR NEW DESIGN

NOT RECOMMENDED FOR NEW DESIGN Technical Data RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 00 MHz. The high gain and

More information

LM566C Voltage Controlled Oscillator

LM566C Voltage Controlled Oscillator LM566C Voltage Controlled Oscillator General Description The LM566CN is a general purpose voltage controlled oscillator which may be used to generate square and triangular waves the frequency of which

More information

Chapter 2. Technical Terms and Characteristics

Chapter 2. Technical Terms and Characteristics Chapter 2 Technical Terms and Characteristics CONTENTS Page 1 IGBT terms 2-2 2 IGBT characteristics 2-5 This section explains relevant technical terms and characteristics of IGBT modules. 2-1 1 IGBT terms

More information

(250 Volts Peak) SEMICONDUCTOR TECHNICAL DATA

(250 Volts Peak) SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MOC0/D (20 Volts Peak) The MOC0, MOC02 and MOC0 devices consist of gallium arsenide infrared emitting diodes optically coupled to a monolithic silicon

More information

TSM020N03PQ56 30V N-Channel MOSFET

TSM020N03PQ56 30V N-Channel MOSFET PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value Unit V DS 30 V R DS(on) (max) V GS = 10V 2 V GS = 4.5V 3 mω Q

More information

RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs Freescale Semiconductor Technical Data RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs These 90 W RF power LDMOS transistors are designed for wideband RF power amplifiers covering the frequency

More information

LM118/LM218/LM318 Operational Amplifiers

LM118/LM218/LM318 Operational Amplifiers LM118/LM218/LM318 Operational Amplifiers General Description The LM118 series are precision high speed operational amplifiers designed for applications requiring wide bandwidth and high slew rate. They

More information

LM386 Low Voltage Audio Power Amplifier

LM386 Low Voltage Audio Power Amplifier Low Voltage Audio Power Amplifier General Description The LM386 is a power amplifier designed for use in low voltage consumer applications. The gain is internally set to 20 to keep external part count

More information

Features. Symbol JEDEC TO-220AB

Features. Symbol JEDEC TO-220AB Data Sheet June 1999 File Number 2253.2 3A, 5V,.4 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching

More information

LM1084 5A Low Dropout Positive Regulators

LM1084 5A Low Dropout Positive Regulators 5A Low Dropout Positive Regulators General Description The LM1084 is a series of low dropout voltage positive regulators with a maximum dropout of 1.5 at 5A of load current. It has the same pin-out as

More information

NCP3065, NCV3065. Up to 1.5 A Constant Current Switching Regulator for LEDs

NCP3065, NCV3065. Up to 1.5 A Constant Current Switching Regulator for LEDs Up to.5 A Constant Current Switching Regulator for LEDs The NCP3065 is a monolithic switching regulator designed to deliver constant current for powering high brightness LEDs. The device has a very low

More information

Reflective Optical Sensor with Transistor Output

Reflective Optical Sensor with Transistor Output Reflective Optical Sensor with Transistor Output CNY7 Description The CNY7 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E

More information

NOT RECOMMENDED FOR NEW DESIGN

NOT RECOMMENDED FOR NEW DESIGN Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 00 MHz. The high gain and

More information

unit : mm With heat sink (see Pd Ta characteristics)

unit : mm With heat sink (see Pd Ta characteristics) Ordering number: EN1321E Monolithic Linear IC LA4261 3.5 W 2-Channel AF Power Amplifier for Home Stereos and Music Centers Features. Minimum number of external parts required (No input capacitor, bootstrap

More information

www.jameco.com 1-800-831-4242

www.jameco.com 1-800-831-4242 Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. LF411 Low Offset, Low Drift JFET Input Operational Amplifier General Description

More information

AND9035/D. BELASIGNA 250 and 300 for Low-Bandwidth Applications APPLICATION NOTE

AND9035/D. BELASIGNA 250 and 300 for Low-Bandwidth Applications APPLICATION NOTE BELASIGNA 250 and 300 for Low-Bandwidth Applications APPLICATION NOTE Introduction This application note describes the use of BELASIGNA 250 and BELASIGNA 300 in low bandwidth applications. The intended

More information

MM54C150 MM74C150 16-Line to 1-Line Multiplexer

MM54C150 MM74C150 16-Line to 1-Line Multiplexer MM54C150 MM74C150 16-Line to 1-Line Multiplexer MM72C19 MM82C19 TRI-STATE 16-Line to 1-Line Multiplexer General Description The MM54C150 MM74C150 and MM72C19 MM82C19 multiplex 16 digital lines to 1 output

More information

NCP1840. 8-Channel Programmable LED Driver

NCP1840. 8-Channel Programmable LED Driver 8-Channel Programmable LED Driver The NCP1840 is a general purpose LED driver that allows for full programmability of eight separate LED channels through a simple I 2 C serial communication interface.

More information

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.077 Q g (Max.) (nc) 72 Q gs (nc) 11 Q gd (nc) 32 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET

More information

AUTOMOTIVE GRADE. Base part number Package Type Standard Pack Orderable Part Number

AUTOMOTIVE GRADE. Base part number Package Type Standard Pack Orderable Part Number UTOMOTVE GRDE URG4P40S-E nsulated Gate Bipolar Transistor Features V ES = 600V Standard: Optimized for minimum saturation voltage and low operating frequencies ( < khz) Generation 4 GBT design provides

More information

LM2941/LM2941C 1A Low Dropout Adjustable Regulator

LM2941/LM2941C 1A Low Dropout Adjustable Regulator LM2941/LM2941C 1A Low Dropout Adjustable Regulator General Description The LM2941 positive voltage regulator features the ability to source 1A of output current with a typical dropout voltage of 0.5V and

More information

SSM3K335R SSM3K335R. 1. Applications. 2. Features. 3. Packaging and Pin Configuration. 2012-07-19 Rev.3.0. Silicon N-Channel MOS (U-MOS -H)

SSM3K335R SSM3K335R. 1. Applications. 2. Features. 3. Packaging and Pin Configuration. 2012-07-19 Rev.3.0. Silicon N-Channel MOS (U-MOS -H) MOSFETs Silicon N-Channel MOS (U-MOS-H) SSM3K335R SSM3K335R 1. Applications Power Management Switches DC-DC Converters 2. Features (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance : R DS(ON)

More information

SiGe:C Low Noise High Linearity Amplifier

SiGe:C Low Noise High Linearity Amplifier Rev. 2 21 February 2012 Product data sheet 1. Product profile 1.1 General description The is a low noise high linearity amplifier for wireless infrastructure applications. The LNA has a high input and

More information

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET

More information

L78MxxAB L78MxxAC. Precision 500 ma regulators. Features. Description

L78MxxAB L78MxxAC. Precision 500 ma regulators. Features. Description L78MxxAB L78MxxAC Precision 500 ma regulators Features Output current to 0.5 A Output voltages of 5; 6; 8; 9; 10; 12; 15; 18; 24 V Thermal overload protection Short circuit protection Output transition

More information

N-Channel 20-V (D-S) 175 C MOSFET

N-Channel 20-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUD7N-4P PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.37 @ V GS = V 37.6 @ V GS = 4.5 V 9 TO-5 D FEATURES TrenchFET Power MOSFET 75 C Junction Temperature PWM Optimized for

More information

N-Channel 60-V (D-S), 175 C MOSFET

N-Channel 60-V (D-S), 175 C MOSFET N-Channel 6-V (D-S), 75 C MOSFET SUP/SUB7N6-4 V (BR)DSS (V) r DS(on) ( ) (A) 6.4 7 a TO-22AB D TO-263 DRAIN connected to TAB G G D S Top View SUP7N6-4 G D S Top View SUB7N6-4 S N-Channel MOSFET Parameter

More information

LM2941 LM2941C 1A Low Dropout Adjustable Regulator

LM2941 LM2941C 1A Low Dropout Adjustable Regulator June 1994 LM2941 LM2941C 1A Low Dropout Adjustable Regulator General Description The LM2941 positive voltage regulator features the ability to source 1A of output current with a typical dropout voltage

More information