2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS
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1 N393, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 4 Vdc CollectorBase Voltage V CBO 6 Vdc EmitterBase Voltage V EBO 6. Vdc Collector Current Continuous I C madc Total Device T A = C Derate above C Total Device T C = C Derate above C Operating and Storage Junction Temperature Range P D 6 P D 1. 1 mw mw/ C W mw/ C T J, T stg to +1 C THERMAL CHARACTERISTICS (Note 1) Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient R JA C/W Thermal Resistance, JunctiontoCase R JC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates Data in addition to JEDEC Requirements. TO9 CASE 9 STYLE 1 BASE COLLECTOR 3 1 EMITTER STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL AMMO PACK MARKING DIAGRAMS N 39x YWW x = 3 or 4 Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 1 August, 1 Rev. 8 1 Publication Order Number: N393/D
2 N393, ELECTRICAL CHARACTERISTICS (T A = C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note ) (I C = madc, I B = ) V (BR)CEO 4 Vdc CollectorBase Breakdown Voltage (I C = Adc, I E = ) V (BR)CBO 6 Vdc EmitterBase Breakdown Voltage (I E = Adc, I C = ) V (BR)EBO 6. Vdc Base Cutoff Current (V CE = Vdc, V EB = 3. Vdc) I BL nadc Collector Cutoff Current (V CE = Vdc, V EB = 3. Vdc) I CEX nadc ON CHARACTERISTICS DC Current Gain (Note ) (I C =.1 madc, V CE = Vdc) N393 (I C = madc, V CE = Vdc) N393 (I C = madc, V CE = Vdc) N393 (I C = madc, V CE = Vdc) N393 (I C = madc, V CE = Vdc) N393 h FE CollectorEmitter Saturation Voltage (Note ) (I C = madc, I B = madc) (I C = madc, I B = madc V CE(sat)..3 Vdc BaseEmitter Saturation Voltage (Note ) (I C = madc, I B = madc) (I C = madc, I B = madc) SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = madc, V CE = Vdc, f = MHz) N393 V BE(sat).6 f T Output Capacitance (V CB = Vdc, I E =, f = MHz) C obo 4. pf Input Capacitance (V EB =. Vdc, I C =, f = MHz) C ibo 8. pf Input Impedance (I C = madc, V CE = Vdc, f = khz) N393 Voltage Feedback Ratio (I C = madc, V CE = Vdc, f = khz) N393 SmallSignal Current Gain (I C = madc, V CE = Vdc, f = khz) N393 h ie h re.1. h fe Vdc MHz k X 4 Output Admittance (I C = madc, V CE = Vdc, f = khz) h oe 4 mhos Noise Figure (I C = Adc, V CE = Vdc, R S = k, f = khz) N393 SWITCHING CHARACTERISTICS Delay Time (V CC = 3. Vdc, V BE =. Vdc, t d 3 ns Rise Time I C = madc, I B1 = madc) t r 3 ns Storage Time (V CC = 3. Vdc, I C = madc, N393 I B1 = I B = madc) Fall Time t f ns. Pulse Test: Pulse Width s; Duty Cycle %. NF t s 6. 1 db ns
3 N393, ORDERING INFORMATION Device Package Shipping N393RLRM TO9 / Ammo Pack TO9 Units / Bulk G TO9 (PbFree) Units / Bulk RLRA TO9 / Tape & Reel RLRAG TO9 (PbFree) / Tape & Reel RLRM TO9 / Ammo Pack RLRMG TO9 (PbFree) / Ammo Pack RLRP TO9 / Ammo Pack RLRPG RL1G TO9 (PbFree) TO9 (PbFree) / Ammo Pack / Tape & Reel ZL1 TO9 / Ammo Pack ZL1G TO9 (PbFree) / Ammo Pack For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. DUTY CYCLE = % ns +.9 V +3 V k -. V < 1 ns C S < 4 pf* * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit < t 1 < s DUTY CYCLE = % t V +3 V k 1N916 C S < 4 pf* V < 1 ns * Total shunt capacitance of test jig and connectors Figure. Storage and Fall Time Equivalent Test Circuit 3
4 f N393, TYPICAL TRANSIENT CHARACTERISTICS T J = C T J = 1 C CAPACITANCE (pf) C ibo C obo REVERSE BIAS VOLTAGE (VOLTS) Figure 3. Capacitance Q, CHARGE (pc) V CC = 4 V I C /I B = Q T. 3.. Figure 4. Charge Data Q A I C /I B = V CC = 4 V I C /I B = TIME (ns) 1 V t V OB = V. V. 3.. Figure. TurnOn Time t V CC = 3. V 4 V t, RISE TIME (ns) r. 3.. Figure 6. Rise Time t, STORAGE TIME (ns) s I C /I B = I C /I B = t s = t s - 1 / 8 t f I B1 = I B I C /I B = I C /I B = t, FALL TIME (ns) I C /I B = I C /I B = V CC = 4 V I B1 = I B. 3.. Figure. Storage Time. 3.. Figure 8. Fall Time 4
5 N393, TYPICAL AUDIO SMALLSIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V CE = Vdc, T A = C, Bandwidth = Hz) NF, NOISE FIGURE (db) SOURCE RESISTANCE = I C = ma SOURCE RESISTANCE = I C =. ma SOURCE RESISTANCE = k I C = A NF, NOISE FIGURE (db) f = khz I C =. ma I C = ma I C = A I C = A SOURCE RESISTANCE = I C = A f, FREQUENCY (khz) Figure R S, SOURCE RESISTANCE (k OHMS) Figure. h PARAMETERS (V CE = Vdc, f = khz, T A = C) h fe, CURRENT GAIN Figure 11. Current Gain h oe, OUTPUT ADMITTANCE ( mhos) Figure 1. Output Admittance h ie, INPUT IMPEDANCE (k OHMS) Figure 13. Input Impedance h, VOLTAGE FEEDBACK RATIO (X -4 re ) Figure 14. Voltage Feedback Ratio
6 N393, TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) T J = +1 C + C - C V CE = V Figure 1. DC Current Gain V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) I C = ma..3.. T J = C ma ma ma I B, BASE CURRENT (ma) Figure 16. Collector Saturation Region 1. T J = C V I C /I B =. + C TO +1 C V, VOLTAGE (VOLTS) V I C /I B = V V CE = V COEFFICIENT (mv/ C) VC FOR V CE(sat) VB FOR V BE(sat) - C TO + C - C TO + C + C TO +1 C Figure 1. ON Voltages Figure 18. Temperature Coefficients 6
7 N393, PACKAGE DIMENSIONS TO9 (TO6) CASE 911 ISSUE AM R A N B STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.M, CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A B C D X X D G H G J H J K V C L N P SECTION XX R N V R A B BENT LEAD TAPE & REEL AMMO PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.M, CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P T MILLIMETERS SEATING PLANE K DIM MIN MAX A 4.4. B C D.4.4 G X X D G.4.8 J.39. K J N.4.66 V P C R SECTION XX V N STYLE 1: PIN 1. EMITTER. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 163, Denver, Colorado 81 USA Phone: 361 or Toll Free USA/Canada Fax: 3616 or Toll Free USA/Canada N. American Technical Support: 8898 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative N393/D
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NB2304A. 3.3 V Zero Delay Clock Buffer
3.3 V Zero Delay Clock Buffer The NB304A is a versatile, 3.3 V zero delay buffer designed to distribute high-speed clocks in PC, workstation, datacom, telecom and other high-performance applications. It
MC14001B Series. B Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B
MC4B Series BSuffix Series CMOS Gates MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure
MC14049B, MC14050B. Hex Buffer
MC49B, MC5B Hex Buffer The MC49B Hex Inverter/Buffer and MC5B Noninverting Hex Buffer are constructed with MOS PChannel and NChannel enhancement mode devices in a single monolithic structure. These complementary
MC74VHC1GT04. Inverting Buffer / CMOS Logic Level Shifter. LSTTL Compatible Inputs
MC74CGT04 Inverting Buffer / CMOS Logic Level Shifter LSTTL Compatible Inputs The MC74CGT04 is a single gate inverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation
MC34063A, MC33063A, NCV33063A. 1.5 A, Step Up/Down/ Inverting Switching Regulators
MC3403A, MC3303A, NCV3303A. A, StepUp/Down/ Inverting Switching Regulators The MC3403A Series is a monolithic control circuit containing the primary functions required for DCtoDC converters. These devices
MC10SX1190. Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit
Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit Description The MC10SX1190 is a differential receiver, differential transmitter specifically designed to drive coaxial cables. It incorporates
Obsolete Product(s) - Obsolete Product(s)
2N2219A 2N2222A DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed
225 mw SOT 23 Surface Mount
225 mw SOT 23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT 23 package. These devices are designed to provide voltage regulation with minimum space requirement.
40 V, 200 ma NPN switching transistor
Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic
MCR100 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 A RMS 100 thru 600 V
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls,
NSI45060JDT4G. Adjustable Constant Current Regulator & LED Driver. 45 V, 60 100 ma 15%, 2.7 W Package
NSI5JDTG Adjustable Constant Current Regulator & Driver 5 V, ma 5%, 2.7 W Package The adjustable constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost effective
P1727/D. Notebook LCD Panel EMI Reduction IC. Features. Applications. Product Description. Block Diagram PDB
Notebook LCD Panel EMI Reduction IC Features FCC approved method of EMI attenuation Generates a low EMI spread spectrum of the input clock frequency Optimized for frequency range: P727X: 20MHz to 40MHz
NUP4106. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces SO 8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 500 WATTS PEAK POWER 3.
Low Capacitance Surface Mount TVS for High-Speed Data Interfaces The NUP0 transient voltage suppressor is designed to protect equipment attached to high speed communication lines from ESD and lightning.
CAT4101TV. 1 A Constant-Current LED Driver with PWM Dimming
A Constant-Current LED Driver with PWM Dimming Description The CAT4 is a constant current sink driving a string of high brightness LEDs up to A with very low dropout of.5 V at full load. It requires no
1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional
.AT3G Series, SZ.AT3G Series 4 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The series is designed to protect voltage sensitive components from high voltage, high energy transients.
BSP52T1 MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR
Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package,
MC14175B/D. Quad Type D Flip-Flop
Quad Type D Flip-Flop The MC475B quad type D flipflop is cotructed with MOS Pchannel and Nchannel enhancement mode devices in a single monolithic structure. Each of the four flipflops is positiveedge triggered
= CSPEMI205G. 3-Channel Headset Microphone EMI Filter with ESD Protection
3-Channel Headset Microphone EMI Filter with ESD Protection Product Description The CSPEMI205G is a low pass filter array integrating three pi style filters (C R C) that reduce EMI/RFI emissions while
MC33375, NCV33375 Series. 300 ma, Low Dropout Voltage Regulator with On/Off Control LOW DROPOUT MICROPOWER VOLTAGE REGULATOR
3 ma, Low Dropout Voltage Regulator with On/Off Control The MC3337 series are micropower low dropout voltage regulators available in a wide variety of output voltages as well as packages, SOT3 and SOP.
1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series. 1500 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*
.6.8AT3G Series, SZ.6.8AT3G Series 00 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The series is designed to protect voltage sensitive components from high voltage, high energy transients.
Is Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
Obsolete Product(s) - Obsolete Product(s)
High power NPN epitaxial planar bipolar transistor Preliminary data Features High breakdown voltage V CEO = 230 V Typical f T = 30 MHz Application Audio power amplifier Description This device is a NPN
NPN low V CEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
Rev. 03 7 September 2007 Product data sheet 1. Product profile 1.1 General description NPN low V CEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic
NCT65. Remote Trip Point Temperature Sensor with Overtemperature Shutdown
Remote Trip Point Temperature Sensor with Overtemperature Shutdown Description The is a low power temperature monitor housed in an MSOP8 package. It monitors the temperature of a remote thermal diode.
65 V, 100 ma PNP/PNP general-purpose transistor
Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
P3P18S19/D. Notebook LCD Panel EMI Reduction IC. Features. Applications. Product Description. Block Diagram
Notebook LCD Panel EMI Reduction IC Features FCC approved method of EMI attenuation. Provides up to 15dB EMI reduction. Generates a low EMI Spread Spectrum clock and a non-spread reference clock of the
45 V, 100 ma NPN/PNP general-purpose transistor
Rev. 4 18 February 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
MC10SX1189. Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit FIBRE CHANNEL COAXIAL CABLE DRIVER AND LOOP RE- SILIENCY CIRCUIT
Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit Description The MC10SX1189 is a differential receiver, differential transmitter specifically designed to drive coaxial cables. It incorporates
CM1213A-04SO, SZCM1213A-04SO 4-Channel Low Capacitance ESD Protection Array
CM1213A-04SO, SZCM1213A-04SO 4-Channel Low Capacitance ESD Protection Array Product Description CM1213A 04SO has been designed to provide ESD protection for electronic components or subsystems requiring
2SD882. NPN medium power transistor. Features. Applications. Description. High current Low saturation voltage Complement to 2SB772
NPN medium power transistor Features High current Low saturation Complement to 2SB772 Applications Voltage regulation Relay driver Generic switch Audio power amplifier DC-DC converter Description The device
NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472
and Available on commercial versions NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472 DESCRIPTION Qualified Levels: JAN, JANTX, and JANTX This high speed NPN transistor is military
LM337. 1.5 A, Adjustable Output, Negative Voltage Regulator THREE TERMINAL ADJUSTABLE NEGATIVE VOLTAGE REGULATOR
1.5 A, able Output, Negative Voltage Regulator The LM337 is an adjustable 3terminal negative voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of 1.2 V to 37 V. This
PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291
DEVICES PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 LEVELS 2N2906A 2N2907A JAN 2N2906AL 2N2907AL JANTX 2N2906AUA 2N2907AUA JANTXV 2N2906AUB 2N2907AUB JANS 2N2906AUBC * 2N2907AUBC
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V
NGD5NCL, NGD5NACL, NGB5NCL, NGB5NACL, NGP5NCL, NGP5NACL Ignition IGBT 5 A, V N Channel DPAK, D PAK and TO This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating
DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN
NPN Darlington Power Silicon Transistor
Available NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/539 DESCRIPTION This high speed NPN transistor is rated at 8 amps and is military qualified up to a JANTX level. This TO-213AA
DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 04. 2004 Feb 03.
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 Supersedes data of 2002 Oct 04 2004 Feb 03 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS
PMD9002D. 1. Product profile. MOSFET driver. 1.1 General description. 1.2 Features. 1.3 Applications. Quick reference data
Rev. 0 20 November 2006 Product data sheet. Product profile. General description NPN Resistor-Equipped Transistor (RET), NPN general-purpose transistor and high-speed switching diode connected in totem
CS8481. 3.3 V/250 ma, 5.0 V/100 ma Micropower Low Dropout Regulator with ENABLE
3.3 /250 ma, 5.0 /100 ma Micropower Low Dropout Regulator with The CS8481 is a precision, dual Micropower linear voltage regulator. The switched 3.3 primary output ( OUT1 ) supplies up to 250 ma while
MC74AC138, MC74ACT138. 1-of-8 Decoder/Demultiplexer
-of-8 Decoder/Demultiplexer The MC74AC38/74ACT38 is a high speed of 8 decoder/demultiplexer. This device is ideally suited for high speed bipolar memory chip select address decoding. The multiple input
NUP2105L, SZNUP2105L. Dual Line CAN Bus Protector SOT 23 DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR 350 W PEAK POWER
Dual Line CAN Bus Protector The SZ/NUP215L has been designed to protect the CAN transceiver in high speed and fault tolerant networks from ESD and other harmful transient voltage events. This device provides