P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features.

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1 Amplifier Transistors NPN Silicon Features These are PbFree Devices* MAXIMUM RATINGS (T A = 25 C unless otherwise noted) Characteristic Symbol Value Unit CollectorEmitter Voltage V CEO 4 CollectorBase Voltage V CBO 75 EmitterBase Voltage V EBO 6. Collector Current Continuous I C 6 madc Total Device T A = 25 C Derate above 25 C Total Device T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D P D.5 2 T J, T stg 55 to +5 mw mw/ C W mw/ C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R JA 2 C/W Thermal Resistance, Junction to Case R JC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. C TO92 CASE 29 STYLE 7 2 BASE COLLECTOR 3 EMITTER STRAIGHT LEAD BULK PACK MARKING DIAGRAM P2N2 222A AYWW BENT LEAD TAPE & REEL AMMO PACK A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping P2N2222AG TO92 (PbFree) 5 Units/Bulk *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. P2N2222ARLG TO92 (PbFree) 2/Tape & Ammo For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. Semiconductor Components Industries, LLC, 23 January, 23 Rev. 7 Publication Order Number: P2N2222A/D

2 ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I C = madc, I B = ) V (BR)CEO 4 CollectorBase Breakdown Voltage (I C = Adc, I E = ) EmitterBase Breakdown Voltage (I E = Adc, I C = ) Collector Cutoff Current (V CE = 6, V EB(off) = 3. ) Collector Cutoff Current (V CB = 6, I E = ) (V CB = 6, I E =, T A = 5 C) Emitter Cutoff Current (V EB = 3., I C = ) Collector Cutoff Current (V CE = V) Base Cutoff Current (V CE = 6, V EB(off) = 3. ) ON CHARACTERISTICS DC Current Gain (I C =. madc, V CE = ) (I C =. madc, V CE = ) (I C = madc, V CE = ) (I C = madc, V CE =, T A = 55 C) (I C = 5 madc, V CE = ) (Note ) (I C = 5 madc, V CE =. ) (Note ) (I C = 5 madc, V CE = ) (Note ) CollectorEmitter Saturation Voltage (Note ) (I C = 5 madc, I B = 5 madc) (I C = 5 madc, I B = 5 madc) BaseEmitter Saturation Voltage (Note ) (I C = 5 madc, I B = 5 madc) (I C = 5 madc, I B = 5 madc) SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (Note 2) (I C = 2 madc, V CE = 2, f = MHz)C Output Capacitance (V CB =, I E =, f =. MHz) Input Capacitance (V EB =.5, I C =, f =. MHz) Input Impedance (I C =. madc, V CE =, f =. khz) (I C = madc, V CE =, f =. khz) Voltage Feedback Ratio (I C =. madc, V CE =, f =. khz) (I C = madc, V CE =, f =. khz) SmallSignal Current Gain (I C =. madc, V CE =, f =. khz) (I C = madc, V CE =, f =. khz) Output Admittance (I C =. madc, V CE =, f =. khz) (I C = madc, V CE =, f =. khz) Collector Base Time Constant (I E = 2 madc, V CB = 2, f = 3.8 MHz) Noise Figure (I C = Adc, V CE =, R S =. k, f =. khz). Pulse Test: Pulse Width 3 s, Duty Cycle 2.%. 2. f T is defined as the frequency at which h fe extrapolates to unity. V (BR)CBO 75 V (BR)EBO 6. I CEX I CBO I EBO. I CEO I BEX 2 h FE V CE(sat) V BE(sat).6 nadc Adc nadc f T 3 C obo 8. C ibo 25 h ie h re h fe 5 75 h oe rb C c 5 N F 4. nadc nadc MHz pf pf k X 4 Mhos ps db 2

3 ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit SWITCHING CHARACTERISTICS Delay Time (V CC = 3, V BE(off) = 2., t d ns Rise Time I C = 5 madc, I B = 5 madc) (Figure ) t r 25 ns Storage Time (V CC = 3, I C = 5 madc, t s 225 ns Fall Time I B = I B2 = 5 madc) (Figure 2) t f 6 ns SWITCHING TIME EQUIVALENT TEST CIRCUITS +6 V. to s, DUTY CYCLE 2.% + 3 V 2 +6 V. to s, DUTY CYCLE 2.% + 3 V 2-2 V < 2 ns k C S * < pf -4 V < 2 ns k N94 C S * < pf Figure. TurnOn Time Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. - 4 V Figure 2. TurnOff Time h FE, DC CURRENT GAIN T J = 25 C 25 C -55 C V CE =. V V CE = V Figure 3. DC Current Gain. k 3

4 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) I C =. ma ma 5 ma 5 ma I B, BASE CURRENT (ma) Figure 4. Collector Saturation Region t, TIME (ns) t V CC = 3 V t V EB(off) = 2. V t V EB(off) = Figure 5. TurnOn Time I C /I B = 3 5 t, TIME (ns) t s = t s - /8 t f t f Figure 6. TurnOff Time V CC = 3 V I C /I B = I B = I B2 NF, NOISE FIGURE (db) I C =. ma, R S = 5 5 A, R S = 2 A, R S = 2. k 5 A, R S = 4. k R S = OPTIMUM R S = SOURCE R S = RESISTANCE NF, NOISE FIGURE (db) f =. khz I C = 5 A A 5 A. ma f, FREQUENCY (khz) k 2. k 5. k k 2 k 5 k k R S, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 4

5 CAPACITANCE (pf) C eb C cb REVERSE VOLTAGE (VOLTS) f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) V CE = 2 V Figure 9. Capacitances Figure. CurrentGain Bandwidth Product R VC for V CE(sat) V, VOLTAGE (VOLTS).6.4 V I C /I B = V V CE = V. V COEFFICIENT (mv/ C) V I C /I B = k Figure. On Voltages R VB for V BE Figure 2. Temperature Coefficients 5

6 PACKAGE DIMENSIONS TO92 (TO226) CASE 29 ISSUE AM R A N B STRAIGHT LEAD BULK PACK NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A B C D X X D G H G J H J K V C L N P SECTION XX R N V R T SEATING PLANE P G A X X V B K C N BENT LEAD TAPE & REEL AMMO PACK D J SECTION XX NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS DIM MIN MAX A B C D.4.54 G J.39.5 K N P.5 4. R V STYLE 7: PIN. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative P2N2222A/D