MAGX L00 MAGX L0S
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1 Features GaN on SiC D-Mode Transistor Technology Internally Matched Common-Source Configuration Broadband Class AB Operation RoHS* Compliant and 260 C Reflow Compatible +50 V Typical Operation MTTF = 600 years (T J < 200 C) MAGX L00 Applications L-Band pulsed radar Description The MAGX L00 is a gold-metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed L-Band radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. Ordering Information Part Number MAGX L00 MAGX SB3PPR Description Flanged Flangeless GHz Evaluation Board 1 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
2 Typical RF Performance under standard operating conditions, P OUT = 500 W (Peak) Freq. (MHz) P IN (W) Gain (db) I D (A) Eff. (%) RL (db) Droop (db) +1dB OD (W) Electrical Specifications: Freq. = MHz, I DQ = 400 ma, T A = 25 C Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests: V DD = 50 V; 300 µs / 10% Input Power P OUT = 500 W Peak (50 W avg.) P IN Wpk Power Gain P OUT = 500 W Peak (50 W avg.) G P db Drain Efficiency P OUT = 500 W Peak (50 W avg.) η D % Pulse Droop P OUT = 500 W Peak (50 W avg.) Droop db Load Mismatch Stability P OUT = 500 W Peak (50 W avg.) VSWR-S - 3:1 - - Load Mismatch Tolerance P OUT = 500 W Peak (50 W avg.) VSWR-T - 5:1 - - Extended Pulse Width Conditions: V DD = 42 V; 1.0 ms / 10%; (typical RF data) Input Power P OUT = 375 W Peak (37.5 W avg.) P IN Wpk Power Gain P OUT = 375 W Peak (37.5 W avg.) G P db Drain Efficiency P OUT = 375 W Peak (37.5 W avg.) η D % Electrical Characteristics: T A = 25 C Parameter Test Conditions Symbol Min. Typ. Max. Units DC Characteristics: Drain-Source Leakage Current V GS = -8 V, V DS = 175 V I DS ma Gate Threshold Voltage V DS = 5 V, I D = 75 ma V GS (TH) V Forward Transconductance V DS = 5 V, I D = 17.5 ma G M S Dynamic Characteristics: Input Capacitance Not applicable - Input matched C ISS N/A N/A N/A pf Output Capacitance V DS = 50 V, V GS = -8 V, F = 1 MHz C OSS pf Reverse Transfer Capacitance V DS = 50 V, V GS = -8 V, F = 1 MHz C RSS pf 2
3 Absolute Maximum Ratings 1,2,3,4 Parameter Supply Voltage (V DD ) Supply Voltage (V GS ) Supply Current (I DMAX ) Input Power (P IN ) 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Input Power Limit is +3 db over nominal drive required to achieve P OUT = 500 W. 3. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. 4. For saturated performance it recommended that the sum of (3*V DD + abs(v GG )) <175 V. Limit +65 V -8 to -2 V 21.5 A P IN (nominal) + 3 db Absolute Max. Junction/Channel Temp 200ºC Pulsed Power Dissipation at 85 ºC Thermal Resistance, (T J = 70 ºC) V DD = 50 V, I DQ = 400 ma, Pout = 500 W, 300 µs Pulse / 10% Duty Operating Temp Storage Temp Mounting Temperature ESD Min. - Charged Device Model (CDM) ESD Min. - Human Body Model (HBM) 583 W 0.30 ºC/W -40 to +95ºC -65 to +150ºC See solder reflow profile 1300 V 4000 V Test Fixture Impedances F (MHz) Z IF (Ω) Z OF (Ω) j j j j j j j j j j0.1 Zif Correct Device Sequencing Turning the device ON 1. Set V GS to the pinch-off (V P ), typically -5 V. 2. Turn on V DS to nominal voltage (50 V). 3. Increase V GS until the I DS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease V GS down to V P. 3. Decrease V DS down to 0 V. 4. Turn off V GS INPUT NETWORK OUTPUT NETWORK Zof 3
4 Test Fixture Circuit Dimensions Test Fixture Assembly 4 Contact factory for gerber file or additional circuit information.
5 Drain Eff. (%) P OU T (W) MAGX L00 RF Power Transfer Curve (Output Power Vs. Input Power) MHz 1300 MHz 1400 MHz P IN (W) RF Power Transfer Curve (Drain Efficiency Vs. Output Power) MHz 1300 MHz 1400 MHz P OU T (W)
6 P OUT (W) MAGX L00 Typical RF Data with extended pulse conditions 5 : 1.0 ms Pulse, 10% Duty, V DD = 42 V, I DQ = 400 ma MHz 1300 MHz 1400 MHz P IN (W) 5. Drain Voltage and RF output power is de-rated to keep junction temperature within acceptable levels. 6
7 Outline Drawing MAGX L00 M/A-COM GX L LOT NO. / SER NO. 7
8 Outline Drawing MAGX L0S M/A-COM GX LS LOT NO. / SER NO. 8
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