2N5460, 2N5461, 2N5462. JFET Amplifier. P Channel Depletion. Pb Free Packages are Available* Features. MAXIMUM RATINGS

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1 2N546, 2N5461, JFET Amplifier PChannel Depletion Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Drain Gate Voltage V DG 4 Vdc Reverse Gate Source Voltage V GSR 4 Vdc Forward Gate Current I G(f) 1 madc Total Device T A = Derate above P D mw mw/ C Junction Temperature Range T J 65 to +135 C Storage Channel Temperature Range T stg 65 to +15 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3 GATE DRAIN 1 SOURCE TO92 CASE 29 STYLE 7 MARKING DIAGRAM 2N 546x AYWW 2N546x = Device Code x =, 1, or 2 A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 26 March, 26 Rev. 5 1 Publication Order Number: 2N546/D

2 2N546, 2N5461, ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V (BR)GSS (I G = 1 Adc, V DS = ) 2N546, 2N5461, 4 Vdc Gate Reverse Current (V GS = 2 Vdc, V DS = ) 2N546, 2N5461, (V GS = 3 Vdc, V DS = ) (V GS = 2 Vdc, V DS =, T A = 1 C) 2N546, 2N5461, (V GS = 3 Vdc, V DS =, T A = 1 C) I GSS nadc Adc GateSource Cutoff Voltage 2N546 (dc, I D = 1. Adc) 2N5461 V GS(off) Vdc GateSource Voltage (dc, I D =.1 madc) 2N546 (dc, I D =.2 madc) 2N5461 (dc, I D =.4 madc) V GS Vdc ON CHARACTERISTICS ZeroGateVoltage Drain Current 2N546 (dc, V GS =, f = 1. khz) 2N5461 I DSS madc SMALLSIGNAL CHARACTERISTICS Forward Transfer Admittance 2N546 (dc, V GS =, f = 1. khz) 2N5461 y fs mhos Output Admittance (dc, V GS =, f = 1. khz) y os 75 mhos Input Capacitance (dc, V GS =, f = 1. MHz) C iss pf Reverse Transfer Capacitance (dc, V GS =, f = 1. MHz) C rss pf FUNCTIONAL CHARACTERISTICS Equivalent ShortCircuit Input Noise Voltage (dc, V GS =, f = 1 Hz, BW = 1. Hz) e n nv Hz ORDERING INFORMATION 2N546 2N546G 2N5461 2N5461G Device Package Shipping TO92 TO92 (PbFree) TO92 TO92 (PbFree) 1 Units / Box 2N5461RLRA 2N5461RLRAG TO92 TO92 (PbFree) 2 / Tape & Reel G TO92 TO92 (PbFree) 1 Units / Box For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. 2

3 2N546, 2N5461, DRAIN CURRENT versus GATE SOURCE VOLTAGE FORWARD TRANSFER ADMITTANCE versus DRAIN CURRENT T A = 55 C V GS, GATESOURCE VOLTAGE (VOLTS) f = 1. khz Figure 1. V GS(off) = 2. V Figure 4. V GS(off) = 2. V T A = 55 C V GS, GATESOURCE VOLTAGE (VOLTS) Figure 2. V GS(off) = 4. V T A = 55 C V GS, GATESOURCE VOLTAGE (VOLTS) Figure 5. V GS(off) = 4. V f = 1. khz 1 7 f = 1. khz Figure 3. V GS(off) = 5. V Figure 6. V GS(off) = 5. V 3

4 2N546, 2N5461, r oss, OUTPUT RESISTANCE (k ohms) f = 1. khz I DSS = 3. ma 1 ma 6. ma C, CAPACITANCE (pf) C oss C iss f = 1. MHz V GS = C rss V DS, DRAINSOURCE VOLTAGE (VOLTS) Figure 7. Output Resistance versus Drain Current Figure 8. Capacitance versus DrainSource Voltage NF, NOISE FIGURE (db) V GS = f = 1 Hz , R S, SOURCE RESISTANCE (k Ohms) Figure 9. Noise Figure versus Source Resistance v i C rss C iss r oss C oss y fs v i COMMON SOURCE y PARAMETERS FOR FREQUENCIES BELOW 3 MHz y is = j C iss y os = j C osp * + 1/r oss y fs = y fs y rs = j C rss *C osp is C oss in parallel with Series Combination of C iss and C rss. NOTE: 1. Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 63 ms, Duty Cycle = 1%). Figure 1. Equivalent Low Frequency Circuit 4

5 2N546, 2N5461, PACKAGE DIMENSIONS TO92 CASE 2911 ISSUE AL SEATING PLANE R A X X H V 1 N G P N B L K C D J SECTION XX NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D G H J K L N P R V STYLE 7: PIN 1. SOURCE 2. DRAIN 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 291 Kamimeguro, Meguroku, Tokyo, Japan Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. 2N546/D

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