PowerMOS transistor Avalanche energy rated

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1 IRF84 FEATURES SYMBOL QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching High thermal cycling performance Low thermal resistance g d V DSS = V I D = 8. A R DS(ON).8 Ω s GENERAL DESCRIPTION PINNING SOT78 (TOAB) N-channel, enhancement mode PIN DESCRIPTION field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and gate computer monitor power supplies, drain d.c. to d.c. converters, motor control circuits and general purpose 3 source switching applications. The IRF84 is supplied in the tab drain SOT78 (TOAB) conventional leaded package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 34) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DSS Drain-source voltage T j = C to C - V V DGR Drain-gate voltage T j = C to C; R GS = kω - V V GS Gate-source voltage - ± 3 V I D Continuous drain current T mb = C; V GS = V - 8. A T mb = C; V GS = V -.4 A I DM Pulsed drain current T mb = C - 34 A P D Total dissipation T mb = C - 47 W T j, T stg Operating junction and - C storage temperature range AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 34) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT E Non-repetitive avalanche Unclamped inductive load, I = 7.4 A; - 3 mj AS energy AS t p =. ms; T j prior to avalanche = C; V DD V; R GS = Ω; V GS = V; refer to fig:7 E AR Repetitive avalanche energy I AR = 8. A; t p =. µs; T j prior to - 3 mj GS GS refer to fig:8 avalanche = C; R = Ω; V = V; I AS, I AR Repetitive and non-repetitive - 8. A avalanche current tab 3 pulse width and repetition rate limited by T j max. March 999 Rev.

2 IRF84 THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction K/W to mounting base R th j-a Thermal resistance junction in free air K/W to ambient ELECTRICAL CHARACTERISTICS T j = C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = V; I D =. ma - - V voltage V (BR)DSS / Drain-source breakdown V DS = V GS ; I D =. ma -. - %/K T j voltage temperature coefficient R DS(ON) Drain-source on resistance V GS = V; I D = 4.8 A Ω V GS(TO) Gate threshold voltage V DS = V GS ; I D =. ma V g fs Forward transconductance V DS = 3 V; I D = 4.8 A S I DSS Drain-source leakage current V DS = V; V GS = V - µa V DS = 4 V; V GS = V; T j = C - 4 µa I GSS Gate-source leakage current V GS = ±3 V; V DS = V - na Q g(tot) Total gate charge I D = 8. A; V DD = 4 V; V GS = V - 8 nc Q gs Gate-source charge -. 7 nc Q gd Gate-drain (Miller) charge nc t d(on) Turn-on delay time V DD = V; R D = 3 Ω; ns t r Turn-on rise time R G = 9. Ω ns t d(off) Turn-off delay time ns t f Turn-off fall time ns L d Internal drain inductance Measured from tab to centre of die nh L d Internal drain inductance Measured from drain lead to centre of die nh L s Internal source inductance Measured from source lead to source nh bond pad C iss Input capacitance V GS = V; V DS = V; f = MHz pf C oss Output capacitance pf C rss Feedback capacitance pf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS T j = C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I S Continuous source current T mb = C A (body diode) I SM Pulsed source current (body T mb = C A diode) V SD Diode forward voltage I S = 8. A; V GS = V - -. V t rr Q rr Reverse recovery time Reverse recovery charge I S = 8. A; V GS = V; di/dt = A/µs ns µc March 999 Rev.

3 IRF PD% Normalised Power Derating Tmb / C Fig.. Normalised power dissipation. PD% = P D /P D C = f(t mb ).. Zth j-mb, Transient thermal impedance (K/W) D =..... single pulse PHP6N6 D = T T t. us us us ms ms ms tp, pulse width (s) Fig.4. Transient thermal impedance. Z th j-mb = f(t); parameter D = t p /T P D tp tp s ID% Normalised Current Derating Tmb / C Fig.. Normalised continuous drain current. ID% = I D /I D C = f(t mb ); conditions: V GS V ID, Drain current (Amps) 3 3 VDS, Drain-Source voltage (Volts) 7 V Fig.. Typical output characteristics. I D = f(v DS ); parameter V GS PHP8N V 6. V 6 V. V V VGS = 4. V ID / A RDS(ON) = VDS/ID DC BUK47-B tp = us us ms ms ms.. RDS(on), Drain-Source on resistance (Ohms) PHP8N 4. V V. V VGS = 6 V 6. V 7 V V. VDS / V Fig.3. Safe operating area. T mb = C I D & I DM = f(v DS ); I DM single pulse; parameter t p ID, Drain current (Amps) Fig.6. Typical on-state resistance. R DS(ON) = f(i D ); parameter V GS March Rev.

4 IRF84 ID, Drain current (Amps) VDS > ID x RDS(on)max PHP8N 4 VGS(TO) / V max. 3 typ. min. Tj = C VGS, Gate-Source voltage (Volts) Fig.7. Typical transfer characteristics. I D = f(v GS ); parameter T j Tj / C Fig.. Gate threshold voltage. V GS(TO) = f(t j ); conditions: I D =. ma; V DS = V GS 8 gfs, Transconductance (S) VDS > ID x RDS(on)max PHP8N E- E- ID / A SUB-THRESHOLD CONDUCTION 6 C E-3 % typ 98 % 4 E-4 E- ID, Drain current (A) Fig.8. Typical transconductance. g fs = f(i D ); parameter T j E VGS / V Fig.. Sub-threshold drain current. I D = f(v GS) ; conditions: T j = C; V DS = V GS a Normalised RDS(ON) = f(tj) Junction capacitances (pf) PHP8N Ciss Coss Crss Tj / C Fig.9. Normalised drain-source on-state resistance. a = R DS(ON) /R DS(ON) C = f(t j ); I D = 4. A; V GS = V VDS, Drain-Source voltage (Volts) Fig.. Typical capacitances, C iss, C oss, C rss. C = f(v DS ); conditions: V GS = V; f = MHz March Rev.

5 IRF Gate-source voltage, VGS (V) ID = 8.A V V VDD = 4 V PHP8NE Gate charge, QG (nc) Fig.3. Typical turn-on gate-charge characteristics. V GS = f(q G ); parameter V DS IF, Source-Drain diode current (Amps) VGS = V C PHP8N VSDS, Source-Drain voltage (Volts) Fig.6. Source-Drain diode characteristic. I F = f(v SDS ); parameter T j Switching times (ns) VDD = V VGS = V RD = 3 Ohms PHP8N Non-repetitive Avalanche current, IAS (A) C td(off) Tj prior to avalanche = C VDS tf tr td(on) RG, Gate resistance (Ohms) Fig.4. Typical switching times; t d(on), t r, t d(off), t f = f(r G ). ID tp PHP8NE E-6 E- E-4 E-3 E- Avalanche time, tp (s) Fig.7. Maximum permissible non-repetitive avalanche current (I AS ) versus avalanche time (t p ); unclamped inductive load.. Normalised Drain-source breakdown voltage Tj C Maximum Repetitive Avalanche Current, IAR (A) Tj prior to avalanche = C. C Tj, Junction temperature (C) Fig.. Normalised drain-source breakdown voltage; V (BR)DSS /V (BR)DSS C = f(t j ). PHP8NE E-6 E- E-4 E-3 E- Avalanche time, tp (s) Fig.8. Maximum permissible repetitive avalanche current (I AR ) versus avalanche time (t p ) March 999 Rev.

6 IRF84 MECHANICAL DATA Plastic single-ended package; heatsink mounted; mounting hole; 3-lead TO- SOT78 E P A A q D D L () L Q L b 3 b c e e mm scale DIMENSIONS (mm are the original dimensions) UNIT A A b b c D D E e L L L () P max. mm q 3..7 Q.6. Note. Terminals in this zone are not tinned. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT78 TO Fig.9. SOT78 (TOAB); pin connected to mounting base (Net mass:g) Notes. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling.. Refer to mounting instructions for SOT78 (TOAB) package. 3. Epoxy meets UL94 V at /8". March Rev.

7 IRF84 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March Rev.