logic level for RCD/ GFI/ LCCB applications

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1 logic level for RCD/ GFI/ LCCB applications BT68W series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope suitable for surface mounting, BT68 BW DW EW GW intended for use in Residual Current V DRM, Repetitive peak 5 6 V Devices/ Ground Fault Interrupters/ V RRM off-state voltages Leakage Current Circuit Breakers I T(AV) Average on-state A (RCD/ GFI/ LCCB) applications current where a imum I GT limit is needed. I T(RMS) RMS on-state current A These devices may be interfaced I TSM Non-repetitive peak A directly to microcontrollers, logic on-state current integrated circuits and other low power gate trigger circuits. PINNING - SOT PIN CONFIGURATION SYMBOL PIN DESCRIPTION cathode anode a k gate tab anode g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC ). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT B D E G V DRM, V RRM Repetitive peak off-state voltages V I T(AV) Average on-state current half sine wave; T sp C -.6 A I T(RMS) RMS on-state current all conduction angles - A I TSM Non-repetitive peak t = ms - 8 A on-state current t = 8. ms - 9 A half sine wave; I t I t for fusing T j = 5 C prior to surge t = ms -. A s di T /dt Repetitive rate of rise of I TM = A; I G = ma; - 5 A/µs on-state current after di G /dt = ma/µs triggering I GM Peak gate current - A V GM Peak gate voltage - 5 V V RGM Peak reverse gate voltage - 5 V P GM Peak gate power - W P G(AV) Average gate power over any ms period -. W T stg Storage temperature - 5 C T j Operating junction temperature - 5 C Although not recommended, off-state voltages up to 8V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 5 A/µs. September 997 Rev.

2 BT68W series THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-sp Thermal resistance K/W junction to solder point R th j-a Thermal resistance pcb mounted, imum footprint K/W junction to ambient pcb mounted, pad area as in fig: K/W STATIC CHARACTERISTICS T j = 5 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I GT Gate trigger current V D = V; I T = ma; gate open circuit 5 µa I L Latching current V D = V; I GT =.5 ma; R GK = kω - 6 ma I H Holding current V D = V; I GT =.5 ma; R GK = kω - 5 ma V T On-state voltage I T = A V V GT Gate trigger voltage V D = V; I T = ma; gate open circuit V V D = V DRM() ; I T = ma; T j = 5 C; gate open circuit.. - V I D, I R Off-state leakage current V D = V DRM() ; V R = V RRM() ; T j = 5 C; -.5. ma R GK = kω DYNAMIC CHARACTERISTICS T j = 5 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dv D /dt Critical rate of rise of V DM = 67% V DRM() ; T j = 5 C; V/µs off-state voltage exponential waveform; R GK = kω t gt Gate controlled turn-on I TM = A; V D = V DRM() ; I G = ma; - - µs t q time di G /dt =. A/µs Circuit commutated V D = 67% V DRM() ; T j = 5 C; turn-off time I TM =.6 A; V R = 5 V; di TM /dt = A/µs; - - µs dv D /dt = V/µs; R GK = kω September 997 Rev.

3 BT68W series Ptot / W.8.6 conduction angle degrees form factor a BT69W.8. Tsp() / C a = ITSM / A 8 6 BT69 I ITSM T T time Tj initial = 5 C IF(AV) / A Fig.. Maximum on-state dissipation, P tot, versus average on-state current, I T(AV), where a = form factor = I T(RMS) / I T(AV). Number of half cycles at 5Hz Fig.. Maximum permissible non-repetitive peak on-state current I TSM, versus number of cycles, for sinusoidal currents, f = 5 Hz. ITSM / A BT69 IT(RMS) / A BTW.5 I ITSM T T time Tj initial = 5 C.5 us us ms ms T / s Fig.. Maximum permissible non-repetitive peak on-state current I TSM, versus pulse width t p, for sinusoidal currents, t p ms... surge duration / s Fig.5. Maximum permissible repetitive rms on-state current I T(RMS), versus surge duration, for sinusoidal currents, f = 5 Hz; T sp C. IT(RMS) / A. BTW C.6. VGT(Tj) VGT(5 C) BT Tsp / C Fig.. Maximum permissible rms current I T(RMS), versus solder point temperature T sp Fig.6. Normalised gate trigger voltage V GT (T j )/ V GT (5 C), versus junction temperature T j. September 997 Rev.

4 BT68W series IGT(Tj) IGT(5 C) BT69 IT / A 5 Tj = 5 C Tj = 5 C BT69W.5 Vo =. V Rs =.7 Ohms.5 typ Fig.7. Normalised gate trigger current I GT (T j )/ I GT (5 C), versus junction temperature T j VT / V Fig.. Typical and imum on-state characteristic. IL(Tj) IL(5 C) BT69 Zth j-sp (K/W) BT69W.5.5. P D t p Fig.8. Normalised latching current I L (T j )/ I L (5 C), versus junction temperature T j, R GK = kω.. us.ms ms ms.s s s tp / s Fig.. Transient thermal impedance Z th j-sp, versus pulse width t p. t IH(Tj) IH(5 C) BT69 dvd/dt (V/us).5 RGK = kohms Fig.9. Normalised holding current I H (T j )/ I H (5 C), versus junction temperature T j, R GK = kω. 5 5 Fig.. Typical, critical rate of rise of off-state voltage, dv D /dt versus junction temperature T j. September 997 Rev.

5 BT68W series MOUNTING INSTRUCTIONS Dimensions in mm (x) Fig.. soldering pattern for surface mounting SOT. PRINTED CIRCUIT BOARD Dimensions in mm Fig.. PCB for thermal resistance and power rating for SOT. PCB: FR epoxy glass (.6 mm thick), copper laate (5 µm thick). 7 5 September Rev.

6 BT68W series MECHANICAL DATA Dimensions in mm Net Mass:. g B. M A A (x) M B Fig.5. SOT surface mounting package. Notes. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide.. Refer to surface mounting instructions for SOT envelope.. Epoxy meets UL9 V at /8". September Rev.

7 BT68W series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliary specification This data sheet contains preliary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC ). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September Rev.

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