BTB04-600SL STANDARD 4A TRIAC MAIN FEATURES

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1 BTB-6SL STANDARD A TRIAC MAIN FEATURES A Symbol Value Unit I T(RMS) A V DRM /V RRM 6 V I GT(Q) ma G A A DESCRIPTION The BTB-6SL quadrants TRIAC is intended for general purpose applications where high surge current capability is required, such as lighting, corded power tools, industrial. This TRIAC features a gate current capability sensitivity of ma. A AG TO-AB ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit I T(RMS) RMS on-state current (full sine wave) TO-AB Tc = C A I TSM Non repetitive surge peak on-state current F=Hz t=ms A (full cycle, Tj initial = C) F = 6 Hz t = 6.7 ms 8 I t I t value for fusing tp = ms 6 A s di/dt Critical rate of rise of on-state current Repetitive F = Hz A/µs I G =xi GT, tr ns I GM Peak gate tp = µs Tj = C A P G(AV) Average gate power dissipation Tj = C. W Tstg Tj Storage junction temperature range Operating junction temperature range - to + - to + C March - Ed: A /

2 BTB-6SL ELECTRICAL CHARACTERISTICS (Tj = C, unless otherwise specified) Symbol Test conditions Quadrant Value Unit I GT () V D = V R L =Ω I - II - III MAX. ma IV MAX. V GT V D = V R L =Ω ALL MAX.. V V GD V D =V DRM R L =.kω Tj = C ALL MIN.. V I H () I T = ma MAX. ma I L I G =.I GT I - III - IV MAX. ma II dv/dt () V D = 67% V DRM gate open Tj = C MIN. 7 V/µs (dv/dt)c () (di/dt)c =.8A/ms Tj = C MIN. V/µs STATIC CHARACTERISTICS Symbol Test Conditions Value Unit V TM () V TO () I TM = A tp = 8µs Tj = C MAX.. V Threshold voltage Tj = C MAX..8 V Rd () Dynamic resistance Tj = C MAX. mω I DRM V DRM =V RRM Tj = C I RRM Tj = C Note : minimum IGT is guaranted at % of IGT max. Note : for both polarities of A referenced to A. MAX. µa ma THERMAL RESISTANCE Symbol Parameter Value Unit Rth (j-c) Junction to case (AC) C/W Rth (j-a) Junction to ambient 6 C/W /

3 BTB-6SL PRODUCT SELECTOR Part Number Voltage Sensitivity Type Package BTB-6SL 6V ma Standard TO-AB ORDERING INFORMATION BT B - 6 SL TRIAC SERIES INSULATION B: non insulated S: SENSITIVITY = ma L: LIGHTING APPLICATION VOLTAGE: 6V CURRENT: A Fig. : Maximum power dissipation versus RMS on-state current P(W) α=8 IT(RMS)(A) 8 α α Fig. : RMS on-state current versus case temperature. IT(RMS)(A) Tc( C) α=8 7 Fig. : Relative variation of thermal impedance versus pulse duration. Fig. : On-state characteristics (maximum values) K = [Zth/Rth].E+ ITM(A) Tj= C Zth(j-c) Tj= C.E- Zth(j-a).E-.E- tp(s).e-.e-.e-.e+.e+.e+.e+ VTM(V) Tj max. : Vto =.8 V Rd = mw /

4 BTB-6SL Fig. : Surge peak on-state current versus number of cycles. Fig. 6: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < ms, and corresponding value of I t. ITSM(A) ITSM(A), I t (A s) Tj initial= C Non repetitive Tj initial= C t=ms di/dt limitation: A/µs ITSM Repetitive Tc= C I²t Number of cycles tp(ms).... Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 8: Relative variation of critical rate of decrease of main current versus reapplied dv/dt (typical values).. IGT, IH, IL[Tj] / IGT, IH, IL [Tj = C]. (di/dt)c [(dv/dt)c] / Specified (di/dt)c IGT..... IH & IL dv/dt (V/µs)..... Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature. Fig. : Relative variation of static dv/dt immunity versus junction temperature. 8 (di/dt)c [Tj] / (di/dt)c [Tj = C] 8 dv/dt [Tj] / dv/dt [Tj = C] VD=VR=V /

5 BTB-6SL PACKAGE MECHANICAL DATA TO-AB (Plastic) DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A H Dia L A C L7 C...8. D E F L F L6 F F G F L9 D G F L H..9.9 L 6. typ..6 typ. G G M E L.. L L L L M.6 typ.. typ. Diam OTHER INFORMATION Ordering type Marking Package Weight Base qty Packing mode BTB-6SL BTB-6SL TO-AB. g Tube Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. /

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