= 25 C = 100 C = 150 C. Watts T J = 0V, I C. = 700µA, T j = 25 C) = 25 C) = 50A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2 = ±20V)

Transcription

1 TYPICAL PERFORMANCE CURVES V APTGFB_LR(G) APTGFBR APTGFLR APTGFBRG* APTGFLRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT (B) T-Max TO-6 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low -Emitter On voltage. (L) Low Forward Voltage Drop High Freq. Switching to KHz RBSOA and SCSOA Rated Ultra Low Leakage Current Intergrated Gate Resistor: Low EMI, High Reliability C G E MAXIMUM RATINGS All Ratings: T C = C unless otherwise specified. Symbol Parameter APTGFB_LR(G) UNIT S -Emitter Voltage Gate-Emitter Voltage ±3 Volts Continuous Current T C = C 3 Continuous T C = C 7 Amps M Pulsed Current SSOA Switching Safe Operating = C V P D Total Power Dissipation 78 Watts,T STG T L Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering:.63" from Case for Sec. - to 3 C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V (BR)CES -Emitter Breakdown Voltage ( = V, = µa) (TH) (ON) ES I GES (int) Gate Threshold Voltage ( =, = 7µA, T j = C) Emitter On Voltage ( = V, = A, T j = C) -Emitter On Voltage ( = V, = A, T j = C) Cut-off Current ( = V, = V, T j = C) Cut-off Current ( = V, = V, T j = C) Gate-Emitter Leakage Current ( = ±V) Intergrated Gate Resistor ± CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - Volts µa na Ω -66 Rev E -6

2 DYNAMIC CHARACTERISTICS APTGFB_LR(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT C ies C oes C res P Q g Q ge Q gc SSOA Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 Gate-Emitter Charge Gate- ("Miller") Charge Switching Safe Operating Area Capacitance = V, = V f = MHz Gate Charge = V = 6V = A = C, =.Ω, 7 = V, L = µh, = V pf V nc A t d(on) t r t d(off) t f E on E on E off t d(on) t r t d(off) t f E on E on E off Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (With Diode) Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (With Diode) Turn-off Switching Energy 6 Inductive Switching ( C) V CC = 8V = V = A =.Ω 7 = + C Inductive Switching ( C) V CC = 8V = V = A =.Ω 7 = + C ns µj ns µj THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R θjc R θjc W T Junction to Case (IGBT) Junction to Case (DIODE) Package Weight 6..6 N/A C/W gm -66 Rev E -6 Repetitive Rating: Pulse width limited by maximum junction temperature. For Combi devices, I ces includes both IGBT and diode leakages 3 See MIL-STD-7 Method 37. E on is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure, but with a Silicon Carbide diode. E on is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures,.) 6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD-. (See Figures, 3.) 7 is external gate resistance, not including (int) nor gate driver impedance. (MIC) Mircosemi Reserves the right to change, without notice, the specifications and information contained herein.

3 TYPICAL PERFORMANCE CURVES V GS(TH), THRESHOLD VOLTAGE, COLLECTOR-TO-EMITTER VOLTAGE (V) (NORMALIZED) µs PULSE TEST<. % DUTY CYCLE, DC COLLECTOR CURRENT(A), COLLECTOR-TO-EMITTER VOLTAGE (V), GATE-TO-EMITTER VOLTAGE (V) APTGFB_LR(G) 3 6, COLLECTER-TO-EMITTER VOLTAGE (V), COLLECTER-TO-EMITTER VOLTAGE (V) = - C = C = C , GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nc) 3 = V. µs PULSE TEST <. % DUTY CYCLE 8 6 7, GATE-TO-EMITTER VOLTAGE (V), Junction Temperature ( C) FIGURE, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature = V = C = - C = C FIGURE, Output Characteristics( = C) FIGURE 3, Transfer Characteristics = A = C. µs PULSE TEST <. % DUTY CYCLE = A = A , JUNCTION TEMPERATURE ( C) T C, CASE TEMPERATURE ( C) FIGURE 7, Threshold Voltage vs. Junction Temperature FIGURE 8, DC Current vs Case Temperature FIGURE, Output Characteristics ( = C) 8 6 = A = C V 3V V = 6V V = V FIGURE, Gate Charge = A = A = A Lead limited V 9V 8V = 96V -66 Rev E -6

4 3 3 APTGFB_LR(G) -66 Rev E -6 SWITCHING ENERGY LOSSES (mj) E ON, TURN ON ENERGY LOSS (mj) t r, RISE TIME (ns) t d(on), TURN-ON DELAY TIME (ns) 3 = 8V = C or C =.Ω L = µh = V E FIGURE 9, Turn-On Delay Time vs Current =.Ω, L = µh, = 8V = or C, = V E FIGURE, Current Rise Time vs Current E FIGURE 3, Turn-On Energy Loss vs Current, GATE RESISTANCE (OHMS) FIGURE, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (mj) E OFF, TURN OFF ENERGY LOSS (mj) t f, FALL TIME (ns) t d (OFF), TURN-OFF DELAY TIME (ns) =V, = C = 8V =.Ω L = µh =V, = C E FIGURE, Turn-Off Delay Time vs Current =.Ω, L = µh, = 8V E FIGURE, Current Fall Time vs Current = 8V = +V =.Ω = 8V = +V = C A = C A = C A A A A = C, = V = C, = V E FIGURE, Turn Off Energy Loss vs Current = 8V = +V =.Ω = 8V = +V =.Ω A = C A = C A A A A, JUNCTION TEMPERATURE ( C) FIGURE 6, Switching Energy Losses vs Junction Temperature

5 TYPICAL PERFORMANCE CURVES 6, 6 APTGFB_LR(G) C, CAPACITANCE ( P F), C ies C oes 8 6 C res 3 6 8, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS), COLLECTOR TO EMITTER VOLTAGE Figure 7, Capacitance vs -To-Emitter Voltage Figure 8,Minimim Switching Safe Operating Area.8 Z θjc, THERMAL IMPEDANCE ( C/W) D = SINGLE PULSE Duty Factor D = t /t Peak = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (SECONDS) Figure 9a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration Note: -66 Rev E -6 P DM t t 6 Dissipated Power (Watts) ( C) T C ( C) Z EXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 9b, TRANSIENT THERMAL IMPEDANCE MODEL Z EXT F MAX, OPERATING FREQUENCY (khz) T C = C = C D = % = 8V =.Ω T C = 7 C P diss = Figure, Operating Frequency vs Current F max = min (f max, f max ). f max = td(on) + t r + t d(off) + t f f max = P diss - P cond E on + E off - T C R θjc

6 APTGFB_LR(G) APTDQ % Gate Voltage = C t d(on) V CC t r 9% Current % % A Voltage D.U.T. Switching Energy Figure, Inductive Switching Test Circuit Figure, Turn-on Switching Waveforms and Definitions 9% Gate Voltage = C t d(off) 9% Voltage t f % Current Switching Energy Figure 3, Turn-off Switching Waveforms and Definitions T-MAX (B) Package Outline TO-6(L) Package Outline e SAC: Tin, Silver, Copper e SAC: Tin, Silver, Copper.69 (.8).3 (.9).9 (.9).9 (.98).9 (.6) 6.6 (.6).38 (.) 6. (.).6 (.8). (.).8 (.7). (.79) 9. (.768). (.87) 3. (.) 3.8 (.37).8 (.89).6 (.8).79 (.8) 6. (.).8 (.3) 6.9 (.3) -66 Rev E -6. (.6).79 (.3). (.87).9 (.) 9.8 (.78).3 (.8). (.77) Max.. (.). (.). (.) BSC -Plcs. Dimensions in Millimeters and (Inches).87 (.3) 3. (.3).6 (.6).3 (.8) Gate Emitter.9 (.9).69 (.6) 9.8 (.78).39 (.8).8 (.9).76 (.3).8 (.33).3 (.).9 (.).79 (.) 3. (.8) 3.8 (.). (.) BSC -Plcs. Dimensions in Millimeters and (Inches).9 (.9).69 (.6) Gate Emitter