MAGX L00 MAGX L0S

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1 Features GaN depletion mode HEMT microwave transistor Internally matched Common source configuration Broadband Class AB operation RoHS Compliant +50V Typical Operation MTTF of 114 years (Channel Temperature < 220 C) Applications L-Band pulsed radar Product Description The MAGX L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for pulsed L-Band radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today s demanding application needs. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. MAGX L00 Typical RF Performance under standard operating conditions, Pout = 500W (Peak) Freq Pin Gain Slope Id Eff RL Droop +1dB OD (MHz) (W) (db) (db) (A) (%) (db) (db) (W) Ordering Information MAGX L00 / 500W GaN Power Transistor (Production) MAGX PPR / MAGX PPR 500W GaN Power Transistor (Pre-Release) MAGX SB3PPR Evaluation Fixture 1

2 Absolute Maximum Ratings Table (1, 2, 3) Supply Voltage (V DD ) +65V Supply Voltage (V GS ) -8 to -2V Supply Current (I DMAX ) 21.5 A Input Power (P IN ) +43 dbm Absolute Max. Junction/Channel Temp 200 ºC MTTF (T J <200 C) 114 years Pulsed Power Dissipation at 85ºC 383 W Thermal Resistance, (Tj = 70 ºC) V DD = 50V, I DQ = 400mA, Pout = 500W 0.30 ºC/W 300us Pulse / 10% Duty Operating Temp -40 to +95ºC Storage Temp -65 to +150ºC Mounting Temperature See solder reflow profile ESD Min. - Charged Device Model (CDM) 400V ESD Min. - Human Body Model (HBM) 250V MSL Level MSL1 (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. (3) For saturated performance it recommended that the sum of (3*Vdd + abs(vgg)) <175 Parameter Test Conditions Symbol Min Typ Max Units DC CHARACTERISTICS Drain-Source Leakage Current V GS = -8V, V DS = 175V I DS ma Gate Threshold Voltage V DS = 5V, I D = 75mA V GS (th) V Forward Transconductance V DS = 5V, I D = 17.5mA G M S DYNAMIC CHARACTERISTICS Input Capacitance Not applicable Input internally matched C ISS N/A N/A N/A pf Output Capacitance V DS = 50V, V GS = -8V, F = 1MHz C OSS pf Feedback Capacitance V DS = 50V, V GS = -8V, F = 1MHz C RSS pf 2

3 Electrical Specifications: T C = 25 ± 5 C (Room Ambient ) Parameter Test Conditions Symbol Min Typ Max Units RF FUNCTIONAL TESTS (V DD = 50V; I DQ = 400mA; 300us / 10%; MHz) Input Power Pout = 500W Peak (50W avg) P IN Wpk Power Gain Pout = 500W Peak (50W avg) G P db Drain Efficiency Pout = 500W Peak (50W avg) η D % Load Mismatch Stability Pout = 500W Peak (50W avg) VSWR-S - 3:1 - - Load Mismatch Tolerance Pout = 500W Peak (50W avg) VSWR-T - 5:1 - - Parameter Test Conditions Symbol Min Typ Max Units EXTENDED PULSE WIDTH CONDITIONS (V DD = 42V; I DQ = 400mA; 1.0ms / 10%; MHz) TYPICAL RF DATA Input Power Pout = 375W Peak (37.5W avg) P IN Wpk Power Gain Pout = 375W Peak (37.5W avg) G P db Drain Efficiency Pout = 375W Peak (37.5W avg) η D % Test Fixture Impedance F (MHz) Z IF (Ω) Z OF (Ω) j j j j j j j j j j0.1 3

4 RF Power Transfer Curve (Output Power Vs. Input Power) Pout (W) MHz 1300 MHz 1400 MHz RF Power Transfer Curve (Drain Efficiency Vs. Output Power) Pin (W) 60 Efficiency (%) MHz 1300 MHz 1400 MHz Pout (W)

5 Typical RF Data with extended pulse conditions: 1.0ms pulse, 10% Duty Vdd = 42V, Idq = 400mA Pout (W) MHz 1300 MHz 1400 MHz Pin (W) Note that Drain Voltage and RF output power is de-rated to keep junction temperature within acceptable levels (Tj < 220⁰C) 5

6 Test Fixture Circuit Dimensions Test Fixture Assembly 6

7 Outline Drawing MAGX L00 7

8 Outline Drawing CORRECT DEVICE SEQUENCING TURNING THE DEVICE ON 1. Set V GS to the pinch-off (V P ), typically -5V 2. Turn on V DS to nominal voltage (50V) 3. Increase V GS until the I DS current is reached 4. Apply RF power to desired level TURNING THE DEVICE OFF 1. Turn the RF power off 2. Decrease V GS down to V P 3. Decrease V DS down to 0V 4. Turn off V GS 8