AT Up to 6 GHz Low Noise Silicon Bipolar Transistor

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1 AT- Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Description Avago s AT- is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT- is housed in a low cost surface mount.5" diameter plastic package. The micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 1 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 5 Ω at 9 MHz, makes this device easy to use as a low noise amplifier. The AT- bipolar transistor is fabricated using Avago s 1 GHz f T Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device. Features Low Noise Figure: 1. db Typical at 1. GHz 1.7 db Typical at. GHz High Associated Gain: 1. db Typical at 1. GHz 1. db Typical at. GHz High Gain-Bandwidth Product:. GHz Typical f T Surface Mount Plastic Package Tape-and-Reel Packaging Option Available Lead-free Option Available 6 Plastic Package Pin Connections EMITTER BASE 1 1 COLLECTOR EMITTER

2 AT- Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum [1] V EBO Emitter-Base Voltage V 1.5 V CBO Collector-Base Voltage V V CEO Collector-Emitter Voltage V 1 I C Collector Current ma 6 P T Power Dissipation [,] mw 5 T j Junction Temperature C T STG Storage Temperature C -65 to Ordering Information Part Numbers No. of Devices Comments AT--BLK 1 Bulk AT--BLKG 1 Bulk AT--TR1 1 7" Reel AT--TR1G 1 7" Reel AT--TR 1" Reel AT--TRG 1" Reel Note: Order part number with a G suffix if lead-free option is desired. Thermal Resistance [,] : θ jc = 5 C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded.. T CASE = 5 C.. Derate at 6 mw/ C for T C > 6 C.. See MEASUREMENTS section Thermal Resistance for more information. Electrical Specifications, T A = 5 C Symbol Parameters and Test Conditions Units Min. Typ. Max. S 1E Insertion Power Gain; V CE = V, I C = 5 ma f = 1. GHz db 17.5 f =. GHz 11.5 P 1 db Power 1 db Gain Compression f =. GHz dbm 1. V CE = V, I C = 5 ma G 1 db 1 db Compressed Gain; V CE = V, I C = 5 ma f =. GHz db 1.5 NF O Optimum Noise Figure: V CE = V, I C = 1 ma f = 1. GHz db f =. GHz 1.7 f =. GHz. NF O ; V CE = V, I C = 1 ma f = 1. GHz db f =. GHz 1. f =. GHz 9. f T Gain Bandwidth Product: V CE = V, I C = 5 ma GHz. h FE Forward Current Transfer Ratio; V CE = V, I C = 1 ma 7 I CBO Collector Cutoff Current; V CB = V µa. I EBO Emitter Cutoff Current; V EB = 1 V µa 1. C CB Collector Base Capacitance [1] : V CB = V, f = 1 MHz pf.5 Note: 1. For this test, the emitter is grounded.

3 AT- Typical Performance, T A = 5 C NF 5 Ω NF O FREQUENCY (GHz) Figure 1. Noise Figure and Associated Gain vs. Frequency. V CE = V, I C = 1 ma. NF (db) NFO 1 1 V 6 V V V 6 V 1 V Figure. Optimum Noise Figure and Associated Gain vs. Collector Current and Collector Voltage. f =. GHz. 1 NF O (db) NF O 1. GHz. GHz. GHz 6. GHz Figure. Optimum Noise Figure and Associated Gain vs. Collector Current and Frequency. V CE = V. NF O (db) G1 db (db) P1 db (dbm) 1 1 P 1dB G 1dB Figure. Output Power and 1 db Compressed Gain vs. Collector Current and Frequency. V CE = V, f =. GHz MSG S 1E FREQUENCY (GHz) MAG Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. V CE = V, I C = 5 ma. S1E GHz. GHz. GHz Figure 6. Insertion Power Gain vs. Collector Current and Frequency. V CE = V.

4 AT- Typical Scattering Parameters, Common Emitter, Z O = 5 Ω, T A =5 C, V CE = V, I C = 1 ma Freq. S 11 S 1 S 1 S GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang AT- Typical Scattering Parameters, Common Emitter, Z O = 5 Ω, T A =5 C, V CE = V, I C = 5 ma Freq. S 11 S 1 S 1 S GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang A model for this device is available in the DEVICE MODELS section. AT- Noise Parameters: VCE = V, IC = 1 ma Freq. NF Γ O opt GHz db Mag Ang R N /

5 6 Plastic Package Dimensions.51 ±.1 (. ±.5) 5 C L 1. ±. (.9 ±.) 1.5 ±.5 (.6 ±.1).67 ±. (. ±.) 5 TYP.. ±.51 (.6 ±.).66 ±.1 (.6 ±.5). MIN (.1 MIN). ±.1 (.5 ±.5) MAX MIN DIMENSIONS ARE IN MILLIMETERS (INCHES) For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries. Data subject to change. Copyright 6 Avago Technologies Pte. All rights reserved. Obsoletes 596-1EN 599-6EN August, 6

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