SMPS MOSFET. V DSS R DS(on) max I D

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1 P SMPS MOSFET IRF7458PbF pplications l High Frequency Isolated C-C Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l l l Ultra-Low Gate Impedance Very Low R S(on) Fully Characterized valanche Voltage and Current S S S G HEXFET Power MOSFET V SS R S(on) max I 30V 8.0mΩ Top View SO-8 bsolute Maximum Ratings Symbol Parameter Max. Units V S rain-source Voltage 30 V V GS Gate-to-Source Voltage ± 30 V T = 25 C Continuous rain Current, V V 4 T = 70 C Continuous rain Current, V V I M Pulsed rain Current = 25 C Maximum Power issipationƒ 2.5 W = 70 C Maximum Power issipationƒ.6 W Linear erating Factor 0.02 mw/ C T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Symbol Parameter Typ. Max. Units R θjl Junction-to-rain Lead 20 R θj Junction-to-mbient 50 C/W Notes through are on page 8 8/7/04

2 IRF7458PbF T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 30 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = m V GS = 6V, I = 4 ƒ R S(on) Static rain-to-source On-Resistance mω V GS = V, I = ƒ V GS(th) Gate Threshold Voltage V V S = V GS, I = 250µ 20 V µ S = 24V, V GS = 0V I SS rain-to-source Leakage Current 0 V S = 24V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage 200 V GS = 24V n Gate-to-Source Reverse Leakage -200 V GS = -24V T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 26 S V S = 5V, I = Q g Total Gate Charge I = Q gs Gate-to-Source Charge 7 nc V S = 5V Q gd Gate-to-rain ("Miller") Charge V GS = V ƒ Q oss Output Gate Charge V GS = 0V, V S = 6V t d(on) Turn-On elay Time V = 5V t r Rise Time 4.6 I ns = t d(off) Turn-Off elay Time 22 R G =.8Ω t f Fall Time 5.0 V GS = V ƒ C iss Input Capacitance 24 V GS = 0V C oss Output Capacitance 0 V S = 5V C rss Reverse Transfer Capacitance pf ƒ =.0MHz valanche Characteristics Symbol Parameter Typ. Max. Units E S Single Pulse valanche Energy 280 mj I R valanche Current iode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 2.3 (Body iode) showing the G I SM Pulsed Source Current integral reverse (Body iode) p-n junction diode. S V T J = 25 C, I S =, V GS = 0V ƒ V S iode Forward Voltage 0.68 T J = 25 C, I S =, V GS = 0V t rr Reverse Recovery Time 5 77 ns T J = 25 C, I F =, V R = 20V Q rr Reverse Recovery Charge nc di/dt = 0/µs ƒ t rr Reverse Recovery Time ns T J = 25 C, I F =, V R =20V Q rr Reverse Recovery Charge nc di/dt = 0/µs ƒ 2

3 IRF7458PbF I, rain-to-source Current () 00 0 VGS TOP 6V 2V V 8.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I, rain-to-source Current () 00 0 VGS TOP 6V 2V V 8.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WITH T J = 25 C 0. 0 V S, rain-to-source Voltage (V) 20µs PULSE WITH T J = 50 C 0. 0 V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I, rain-to-source Current () 00 0 T J = 50 C T J = 25 C V S= 5V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) 2.0 I = V GS = V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 C, Capacitance(pF) IRF7458PbF V GS = 0V, f = MHZ C iss = C gs + C gd, C ds C rss = C gd C oss = C ds + C gd Ciss Coss Crss SHORTE V GS, Gate-to-Source Voltage (V) I = V S = 24V V S = 5V 0 V S, rain-to-source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I S, Reverse rain Current () 00 0 T J = 50 C T J = 25 C V GS = 0 V V S,Source-to-rain Voltage (V) I, rain Current () 00 0 OPERTION IN THIS RE LIMITE BY R S(on) us 0us ms T = 25 C ms TJ = 50 C Single Pulse 0. 0 V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4

5 Fig 6. On-Resistance Vs. rain Current IRF7458PbF 6 V S R I, rain Current () R G V GS V Pulse Width µs uty Factor 0. %.U.T. Fig a. Switching Time Test Circuit + - V T C, Case Temperature ( C) V S 90% % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms 0 Thermal Response (Z thj ) 0. = SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thj + T t, Rectangular Pulse uration (sec) PM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient 5

6 R S (on), rain-to-source On Resistance (Ω) IRF7458PbF R S(on), rain-to -Source On Resistance (Ω) V GS = 6.0V V GS = V I = V GS = 6V I, rain Current () V GS, Gate -to -Source Voltage (V) Fig 2. On-Resistance Vs. rain Current Fig 3. On-Resistance Vs. Gate Voltage Current Regulator Same Type as.u.t. 2V I S V GS.2µF 50KΩ 3m.3µF I G.U.T. I Current Sampling Resistors + V - S V GS Fig 3a&b. Basic Gate Charge Test Circuit and Waveform tp V(BR)SS R G V S 20V V G tp Q GS L.U.T I S 0.0Ω Q G Q G Charge 5V RIVER + - V E S, Single Pulse valanche Energy (mj) TOP BOTTOM I Starting T, Junction Temperature ( J C) Fig 4a&b. Unclamped Inductive Test circuit Fig 4c. Maximum valanche Energy and Waveforms Vs. rain Current 6

7 IRF7458PbF SO-8 Package Outline imensions are shown in millimeters (inches) E 6 6X e B H 0.25 [.0] IM INCHES MILLIMETERS MIN MX MIN MX b c E e e H K L y BS IC.27 BS IC.025 BS IC BSIC e C y K x 45 8X b 0.25 [.0] C B 0. [.004] NOT ES :. IMENSIONING & TOLERNCING PER SME Y4.5M CONTROLLING IMENSION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.5 [.006]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.0]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBSTRTE. 8X L [.255] 3X.27 [.050] 8X c FOOTPRINT 8X 0.72 [.028] 8X.78 [.070] SO-8 Part Marking EXMPLE: THIS IS N IRF7 (MOSFET) INTERNTIONL RECTIFIER LOGO XXXX F7 T E COE (YWW) P = ESIGNTES LE-FREE PROUCT (OPTIONL) Y = LS T IGIT OF T HE YER WW = WEEK = SSEMBLY SITE COE LOT COE PRT NUMBER 7

8 IRF7458PbF SO-8 Tape and Reel imensions are shown in millimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 4.6mH R G = 25Ω, I S =. ƒ Pulse width 400µs; duty cycle 2%. When mounted on inch square copper board, t< sec ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information.08/04 8