QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAY

Transcription

1 ADVANCED LINEAR DEVICES, INC. ALD07/ALD7 QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION The ALD07/ALD7 are monolithic quad/dual P-channel enhancement mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD07/ALD7 offer high input impedance and negative current temperature coefficient. The transistor pairs are matched for minimum offset voltage and differential thermal response, and they are designed for precision analog switching and amplifying applications in +V to +V systems where low input bias current, low input capacitance and fast switching speed are desired. These MOSFET devices feature very large (almost infinite) current gain in a low frequency, or near DC operating environment. The ALD07/ALD7 are builiding blocks for differential amplifier input stages, transmission gates, multiplexer applications, current sources, current mirrors and other precision analog circuits. FEATURES Low threshold voltage of -0.7 Low input capacitance Low VOS mv typical High input impedance -- 04Ω typical Low input and output leakage currents Negative current (I DS ) temperature coefficient Enhancement-mode (normally off) DC current gain 09 Low input and output leakage currents APPLICATIONS Precision current sources Precision current mirrors Voltage Choppers Differential amplifier input stage Voltage comparator Data converters Sample and Hold Precision analog signal processing PIN CONFIGURATION DP GP SP V- DP 4 ALD7 DA, PA, SA PACKAGE ALD DP GP SP V+ DP ORDERING INFORMATION GP GP Operating Temperature Range* -55 C to +5 C 0 C to +70 C 0 C to +70 C 8-Pin CERDIP 8-Pin Plastic Dip 8-Pin SOIC Package Package Package SP V- DP SP V+ DP ALD7 DA ALD7PA ALD7 SA GP4 9 GP 4-Pin CERDIP 4-Pin Plastic Dip 4-Pin SOIC Package Package Package ALD07 DB ALD07 PB ALD07 SB * Contact factory for industrial temperature range. BLOCK DIAGRAM ALD07 SP4 7 8 DB, PB, SB PACKAGE BLOCK DIAGRAM ALD7 SP V- (4) V - (4) D P () DP (4) ~ D P (0) DP4 (5) D P () ~ D P (8) G P () G P () G P (9) G P4 () G P () G P (7) V+ () S P () SP () V+ () S P (8) SP4 (7) V+ (5) S P () SP () 00 rev0 Advanced Linear Devices, Inc. 45 Tasman Drive, Sunnyvale, CA Tel: (408) Fax: (408)

2 ABSOLUTE MAXIMUM RATINGS Drain-source voltage, V DS -.V Gate-source voltage, V GS -.V Power dissipation 500 mw Operating temperature range PA, SA, PB, SB package 0 C to +70 C DA, DB package -55 C to +5 C Storage temperature range -5 C to +50 C Lead temperature, 0 seconds +0 C OPERATING ELECTRICAL CHARACTERISTICS T A = 5 C unless otherwise specified ALD07 ALD7 Test Parameter Symbol Min Typ Max Min Typ Max Unit Conditions Gate Threshold V T V I DS = -.0µA V GS = V DS Voltage Offset Voltage V OS 0 0 mv I DS = -0µA V GS = V DS V GS -V GS Gate Threshold Temperature TC VT mv/ C Drift On Drain I DS (ON) ma V GS = V DS = -5V Current Transconductance G IS mmho V DS = -5V I DS = -0mA Mismatch G fs % Output G OS µmho V DS = -5V I DS = -0mA Conductance Drain Source R DS (ON) Ω V DS = -0.V V GS = -5V On Resistance Drain Source On Resistance R DS (ON) % V DS = -0.V V GS = -5V Mismatch Drain Source Breakdown BV DSS - - V I DS = -.0µA V GS = 0V Voltage Off Drain I DS (OFF) pa V DS = -V V GS = 0V Current 4 4 na T A = 5 C Gate Leakage I GSS pa V DS = 0V V GS = -V Current na T A = 5 C Input C ISS pf Capacitance Notes: Consists of junction leakage currents Sample tested parameters ALD07/ALD7 Advanced Linear Devices

3 TYPICAL PERFORMANCE CHARACTERISITCS DRAIN SOURCE CURRENT (ma) OUTPUT CHARACTERISTICS T A = 5 C V GS = -V -0V -8V -V -4V -V DRAIN SOURCE CURRENT (µa) T A = 5 C LOW VOLTAGE OUTPUT CHARACTERISTICS V GS = -V -V -4V -V DRAIN SOURCE VOLTAGE (V) DRAIN SOURCE VOLTAGE (mv) FORWARD TRANSCONDUCTANCE (mmho) FORWARD TRANSCONDUCTANCE vs. DRAIN SOURCE VOLTAGE f = KHz T A = +5 C I DS = -ma I DS = -5mA T A = +5 C DRAIN SOURCE CURRENT (µa) TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS V 4V V 8V 0V V V GS = V DS T A = 5 C DRAIN SOURCE VOLTAGE (V) GATE SOURCE VOLTAGE (V) DRAIN SOURCE ON RESISTANCE (KΩ) DRAIN SOURCE ON RESISTANCE R DS (ON) vs. GATE SOURCE VOLTAGE V DS = 0.4V T A = +5 C T A = +5 C OFF DRAIN SOURCE CURRENT (pa) OFF DRAIN CURRENT vs. AMBIENT TEMPERATURE V DS = -V V GS = GATE SOURCE VOLTAGE (V) AMBIENT TEMPERATURE ( C) ALD07/ALD7 Advanced Linear Devices

4 TYPICAL APPLICATIONS CURRENT SOURCE MIRROR CURRENT SOURCE WITH GATE CONTROL / ALD07 or ALD7 / ALD07 or ALD7 RSET Digital Logic Control of Current Source RSET Q Q / ALD0 or ALD Q, Q : N - Channel MOSFET, : P - Channel MOSFET = = V+ -Vt = ~ 4 ON OFF Q /4 ALD0 or / ALD Q : N - Channel MOSFET, : P - Channel MOSFET DIFFERENTIAL AMPLIFIER CURRENT SOURCE MULTIPLICATION V+ / ALD07 or ALD7 PMOS PAIR = x N V IN + Q Q NMOS PAIR V OUT V IN - QSET Q Q QN / ALD0 or ALD Current Source Q, Q : N - Channel MOSFET, : P - Channel MOSFET Q SET, Q..Q N : ALD0 or ALD N - Channel MOSFET ALD07/ALD7 Advanced Linear Devices 4

5 TYPICAL APPLICATIONS BASIC CURRENT SOURCES N- CHANNEL CURRENT SOURCE P- CHANNEL CURRENT SOURCE 5 Q 8 7 Q 8 5 / ALD07 or ALD7 7 / ALD0 or ALD = = V + - Vt = ~ V = ~ 4 Q, Q : N - Channel MOSFET, : P - Channel MOSFET CASCODE CURRENT SOURCES ALD07 Q Q Q Q ALD0 = = V + - Vt = ~ Q, Q,, : N - Channel MOSFET (ALD0 or ALD0) Q, Q, Q, Q4: P - Channel MOSFET (ALD0 or ALD0) ALD07/ALD7 Advanced Linear Devices 5

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