IRGP50B60PD1PbF. n-channel SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

Transcription

1 SMPS IGBT PD A IRGP5B6PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies Lead-Free Features NPT Technology, Positive Temperature Coefficient Lower V CE (SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability Benefits Parallel Operation for Higher Current Applications Lower Conduction Losses and Switching Losses Higher Switching Frequency up to 5kHz G C E n-channel V CES = 6V V CE(on) typ. = V GE = 5V I C = 33A Equivalent MOSFET Parameters R CE(on) typ. = 6mΩ I D (FET equivalent) = 5A TO-247AC G C E Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I T C = 25 C Continuous Collector Current 75 I T C = C Continuous Collector Current 45 I CM Pulse Collector Current (Ref. Fig. C.T.4) 5 I LM Clamped Inductive Load Current d 5 A I T C = 25 C Diode Continous Forward Current 4 I T C = C Diode Continous Forward Current 5 I FRM Maximum Repetitive Forward Current e 6 V GE Gate-to-Emitter Voltage ±2 V P T C = 25 C Maximum Power Dissipation 39 W P T C = C Maximum Power Dissipation 56 T J Operating Junction and -55 to +5 T STG Storage Temperature Range C Soldering Temperature for sec. 3 (.63 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw lbf in (. N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT).32 C/W R θjc (Diode) Thermal Resistance Junction-to-Case-(each Diode).7 R θcs Thermal Resistance, Case-to-Sink (flat, greased surface).24 R θja Thermal Resistance, Junction-to-Ambient (typical socket mount) 4 Weight 6. (.2) g (oz) 7/25/8

2 IRGP5B6PDPbF Electrical (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = 5µA V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.3 V/ C V GE = V, I C = ma (25 C-25 C) R G Internal Gate Resistance.7 Ω MHz, Open Collector I C = 33A, V GE = 5V 4, 5,6,8,9 V CE(on) Collector-to-Emitter Saturation Voltage V I C = 5A, V GE = 5V I C = 33A, V GE = 5V, I C = 5A, V GE = 5V, V GE(th) Gate Threshold Voltage V I C = 25µA 7,8,9 V GE(th) / TJ Threshold Voltage temp. coefficient - mv/ C V CE = V GE, I C =.ma gfe Forward Transconductance 4 S V CE = 5V, I C = 33A, PW = 8µs I CES Collector-to-Emitter Leakage Current 5. 5 µa V GE = V, V CE = 6V. ma V GE = V, V CE = 6V, V FM Diode Forward Voltage Drop.3.7 V I F = 5A, V GE = V.2.6 I F = 5A, V GE = V, I GES Gate-to-Emitter Leakage Current ± na V GE = ±2V, V CE = V Switching (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig Qg Total Gate Charge (turn-on) I C = 33A 7 Q gc Gate-to-Collector Charge (turn-on) 7 5 nc V CC = 4V CT Q ge Gate-to-Emitter Charge (turn-on) 3 45 V GE = 5V E on Turn-On Switching Loss I C = 33A, V CC = 39V CT3 E off Turn-Off Switching Loss µj V GE = +5V, R G = 3.3Ω, L = 2µH E total Total Switching Loss TJ = 25 C f t d(on) Turn-On delay time 3 4 I C = 33A, V CC = 39V CT3 t r Rise time 5 ns V GE = +5V, R G = 3.3Ω, L = 2µH t d(off) Turn-Off delay time 3 5 f t f Fall time 5 E on Turn-On Switching Loss 58 7 I C = 33A, V CC = 39V CT3 E off Turn-Off Switching Loss µj V GE = +5V, R G = 3.3Ω, L = 2µH,3 E total Total Switching Loss 6 25 f WF,WF2 t d(on) Turn-On delay time I C = 33A, V CC = 39V CT3 t r Rise time 3 2 ns V GE = +5V, R G = 3.3Ω, L = 2µH 2,4 t d(off) Turn-Off delay time f WF,WF2 t f Fall time 5 2 C ies Input Capacitance 3648 V GE = V 6 C oes Output Capacitance 322 V CC = 3V C res Reverse Transfer Capacitance 56 pf f = Mhz C oes eff. Effective Output Capacitance (Time Related) g 25 V GE = V, V CE = V to 48V 5 C oes eff. (ER) Effective Output Capacitance (Energy Related) g 63 T J = 5 C, I C = 5A 3 RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 48V, Vp =6V CT2 Rg = 22Ω, V GE = +5V to V t rr Diode Reverse Recovery Time 42 6 ns I F = 5A, V R = 2V, di/dt = 2A/µs Q rr Diode Reverse Recovery Charge 8 8 nc I F = 5A, V R = 2V, di/dt = 2A/µs I rr Peak Reverse Recovery Current A I F = 5A, V R = 2V, 9,2,2,22 Notes: 6.5 di/dt = 2A/µs CT5 R CE(on) typ. = equivalent on-resistance = V CE(on) typ./ I C, where V CE(on) typ.= 2.V and I C =33A. I D (FET Equivalent) is the equivalent MOSFET I D 25 C for applications up to 5kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions. V CC = 8% (V CES ), V GE = 5V, L = 28 µh, R G = 22 Ω. ƒ Pulse width limited by max. junction temperature. Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 3ETH6. C oes eff. is a fixed capacitance that gives the same charging time as C oes while V CE is rising from to 8% V CES. C oes eff.(er) is a fixed capacitance that stores the same energy as C oes while V CE is rising from to 8% V CES. 2

3 I CE (A) I CE (A) I C A) I CE (A) I C (A) P tot (W) IRGP5B6PDPbF T C ( C) T C ( C) Fig. - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature V GE = 5V VGE = 2V VGE = V VGE = 8.V VGE = 6.V Fig. 3 - Reverse Bias SOA T J = 5 C; V GE =5V Fig. 4 - Typ. IGBT Output Characteristics T J = -4 C; tp = 8µs V GE = 5V VGE = 2V VGE = V VGE = 8.V VGE = 6.V V GE = 5V VGE = 2V VGE = V VGE = 8.V VGE = 6.V Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics ; tp = 8µs ; tp = 8µs 3

4 Swiching Time (ns) I CE (A) IRGP5B6PDPbF I CE = 5A I CE = 33A I CE = 5A V GE (V) V GE (V) Fig. 7 - Typ. Transfer Characteristics V CE = 5V; tp = µs Fig. 8 - Typical V CE vs. V GE I CE = 5A I CE = 33A I CE = 5A Instantaneous Forward Current - I (A) F T J = 5 C V GE (V) Fig. 9 - Typical V CE vs. V GE Forward Voltage Drop - V FM (V) Fig. - Typ. Diode Forward Characteristics tp = 8µs 2 Energy (µj) 8 E ON td OFF 6 E OFF 4 t F 2 td ON t R I C (A) I C (A) Fig. - Typ. Energy Loss vs. I C Fig. 2 - Typ. Switching Time vs. I C ; L = 2µH; V CE = 39V, R G = 3.3Ω; V GE = 5V. ; L = 2µH; V CE = 39V, R G = 3.3Ω; V GE = 5V. Diode clamp used: 3ETH6 (See C.T.3) Diode clamp used: 3ETH6 (See C.T.3) 4

5 V GE (V) Normalized V CE(on) (V) E oes (µj) Capacitance (pf) Energy (µj) Swiching Time (ns) IRGP5B6PDPbF 9 8 E ON td OFF 7 6 E OFF 5 td ON 4 t F R G (Ω) t R R G (Ω) Fig. 3 - Typ. Energy Loss vs. R G ; L = 2µH; V CE = 39V, I CE = 33A; V GE = 5V Diode clamp used: 3ETH6 (See C.T.3) 4 Fig. 4 - Typ. Switching Time vs. R G ; L = 2µH; V CE = 39V, I CE = 33A; V GE = 5V Diode clamp used: 3ETH6 (See C.T.3) Cies 3 2 Coes Cres Fig. 5- Typ. Output Capacitance Stored Energy vs. V CE Fig. 6- Typ. Capacitance vs. V CE V GE = V; f = MHz V Q G, Total Gate Charge (nc) T J ( C) Fig. 7 - Typical Gate Charge vs. V GE Fig. 8 - Normalized Typ. V CE(on) I CE = 33A vs. Junction Temperature I C = 33A, V GE = 5V 5

6 IRGP5B6PDPbF V R = 2V V R = 2V 8 I = 3A F t rr - (ns) 6 I F = 3A I F = 5A I IRRM - (A) I F = 5A 4 I = 5.A F I F = 5.A 2 di f /dt - (A/µs) Fig. 9 - Typical Reverse Recovery vs. di f /dt di f /dt - (A/µs) Fig. 2 - Typical Recovery Current vs. di f /dt 8 V R = 2V V R = 2V 6 Q RR - (nc) 4 I F = 5A I F = 5.A I F = 3A di(rec)m/dt - (A/µs) I F = 5.A I F = 5A I = 3A F 2 di f /dt - (A/µs) Fig. 2 - Typical Stored Charge vs. di f /dt di f /dt - (A/µs) Fig Typical di (rec)m /dt vs. di f /dt, 6

7 Thermal Response ( Z thjc ) IRGP5B6PDPbF Thermal Response ( Z thjc ).. D = R R 2 R R 2 τ J τ J τ τ τ 2 τ 2 τ C τ Ri ( C/W) τi (sec) Ci= τi/ri Ci i/ri SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-6 E t, Rectangular Pulse Duration (sec) Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT).. D = SINGLE PULSE ( THERMAL RESPONSE ) R R 2 R 3 R R 2 R 3 τ J τ J τ τ τ 2 τ 3 τ 2 τ 3 Ci= τi/ri Ci i/ri τ C τ Ri ( C/W) τi (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-6 E t, Rectangular Pulse Duration (sec) Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7

8 IRGP5B6PDPbF L K DUT L VCC 8 V Rg DUT 48V Fig.C.T. - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit PFC diode L R = VCC ICM Rg DUT / DRIVER VCC Rg DUT VCC Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit REVERSE RECOVERY CIRCUIT V R = 2V. Ω dif/dt ADJUST L = 7µH G D IRFP25 D.U.T. S Fig. C.T.5 - Reverse Recovery Parameter Test Circuit 8

9 IRGP5B6PDPbF VCE (V) tf % I CE % V CE 5 5 5% I CE -5 Eof f Time (µs) Fig. WF - Typ. Turn-off Loss using Fig. CT.3 ICE (A) VCE (V) tr % I CE 9% I CE TEST CURRENT 5% V CE Eon Loss Time(µs) Fig. WF2 - Typ. Turn-on Loss using Fig. CT.3 ICE (A) 3 I F t a trr t b Q rr 4 2 I RRM.5 I RRM di(rec)m/dt 5.75 I RRM di /dt f. di f/dt - Rate of change of current through zero crossing 2. I RRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through.75 I RRM and.5 I RRM extrapolated to zero current 4. Q rr - Area under curve defined by t rr and I RRM t rr X I RRM Q rr = 2 5. di (rec)m/dt - Peak rate of change of current during t b portion of t rr Fig. WF3 - Reverse Recovery Waveform and Definitions 9

10 IRGP5B6PDPbF TO-247AC Package Outline Dimensions are shown in milimeters (inches) TO-247AC Part Marking Information I r)qv h r iy yv rƒ v v v qvph r GrhqA rr DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPU8P9@,5)3( + Q6SUIVH7@S 96U@8P9@ `@6S 2! X@@F"$ GDI@C TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. 7/28