19TQ015PbF. 19 Amp SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 19Amp V R = 15V. Bulletin PD rev. B 04/06. Major Ratings and Characteristics

Size: px
Start display at page:

Download "19TQ015PbF. 19 Amp SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 19Amp V R = 15V. Bulletin PD-20840 rev. B 04/06. Major Ratings and Characteristics"

Transcription

1 Bulletin PD-0840 rev. B 04/06 9TQ05PbF SCHOTTKY ECTIFIE 9 Amp I F(A) = 9Amp = 5 Major atings and Characteristics Characteristics alues Units I F(A) ectangular 9 A waveform M 5 I tp = 5 μs sine 700 A 9 Apk, T = 75 C 0.3 range - 55 to 5 C Description/ Features The 9TQ05PbF Schottky rectifier has been optimized for ultra low forward voltage drop specifically for the O-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 5 C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. 5 C operation ( < 5) Optimized for O-ing applications Ultra low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Lead-Free ("PbF" suffix) Case Styles 9TQ05PbF Base Cathode 3 Cathode Anode TO-0AC

2 9TQ05PbF Bulletin PD-0840 rev. B 04/06 oltage atings WM Part number Max. DC everse oltage () Max. Working Peak everse oltage () 9TQ05PbF 5 Absolute Maximum atings Parameters 9TQ Units Conditions I F(A) Max. Average Forward Current 9 A 50% duty T C = 80 C, rectangular wave form * See Fig. 5 I FSM Max. Peak One Cycle Non-epetitive 700 5μs Sine or 3μs ect. pulse Following any rated A load condition and Surge Current * See Fig ms Sine or 6ms ect. pulse with rated M E AS Non-epetitive Avalanche Energy 6.75 m applied = 5 C, I AS =.50 Amps, L = 6 mh I A epetitive Avalanche Current.50 A Current decaying linearly to zero in μsec Frequency limited by max. A = 3 x typical Electrical Specifications Parameters 9TQ Units Conditions FM 0.3 I M Max. Forward oltage Drop Max. everse Leakage Current () 9A ma = 5 9A 0.43 * See Fig. * See 38A ma = 00 38A = 5 C = 75 C = rated 465 ma = 00 C, = 85 ma = 00 C, = 5 C T Max. unction Capacitance 000 pf = 5 DC (test signal range 00Khz to Mhz) 5 C L S Typical Series Inductance 8.0 nh Measured lead to lead 5mm from package body dv/dt Max. oltage ate of Change 0000 / μs (ated ) Thermal-Mechanical Specifications Parameters 9TQ Units Conditions () Pulse Width < 300μs, Duty Cycle < % Max. unction Temperature ange -55 to 5 C T stg Max. Storage Temperature ange -55 to 50 C thc Max. Thermal esistance unction.50 C/W DC operation * See Fig. 4 to Case thcs Typical Thermal esistance, Case to 0.50 C/W Mounting surface, smooth and greased Heatsink wt Approximate Weight (0.07) g (oz.) T Mounting Torque Min. 6 (5) Kg-cm Max. (0) (Ibf-in) Marking Device 9TQ05

3 9TQ05PbF Bulletin PD-0840 rev. B 04/ T = 00 C Instantaneous Forward Current - I F (A) 00 0 T = 00 C T = 75 C T = 5 C everse Current - I (ma) unction Capacitance - C (pf) T C 50 C 5 C everse oltage - () Fig. - Typical alues of everse Current s. everse oltage T = 5 C Forward oltage Drop - () FM Fig. - Maximum Forward oltage Drop Characteristics everse oltage - () Fig. 3 - Typical unction Capacitance s. everse oltage Thermal Impedance - Z thc ( C/W). D = 0.50 D = 0.33 D = 0.5 D = 0.7 D = 0.08 t t Notes:.0. Duty factor D= t / t Single Pulse (Thermal esistance). Peak T = P x Z + T DM thc C P DM t, ectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance Z thc Characteristics 3

4 9TQ05PbF Bulletin PD-0840 rev. B 04/06 Allowable Case Temperature - ( C) TQ05 thc (DC) =.50 C/W DC Average Power Loss - (Watts) MS Limit 4 D= 0.08 D= 0.7 D= 0.5 D= 0.33 D= 0.50 DC Average Forward Current - I (A) F(A) Fig. 5 - Maximum Allowable Case Temperature s. Average Forward Current Average Forward Current - I (A) F(A) Fig. 6 - Forward Power Loss Characteristics 000 Non-epetitive Surge Current - I (A) FSM At Any ated Load Condition And With ated Applied Following Surge M Square Wave Pulse Duration - t p (microsec) Fig. 7 - Maximum Non-epetitive Surge Current L DUT IFP460 HIG H-SPEED SWITCH g = 5 ohm FEE-WHEEL DIODE + d = 5 olt CUENT MONITO 40HFL40S0 Fig. 8 - Unclamped Inductive Test Circuit 4

5 9TQ05PbF Bulletin PD-0840 rev. B 04/06 Outline Table Conform to EDEC outline TO-0AC Part Marking Information IXC Assembly Line - SubCon Assembly Line EXAMPLE: THIS IS A 9TQ05 LOT CODE 789 ASSEMBLED ON WW 9, 00 IN THE ASSEMBLY LINE "C" INTENATIONAL ECTIFIE LOGO ASSEMBLY LOT CODE PAT NUMBE DATE CODE P = LEAD-FEE YEA = 00 WEEK 9 LINE C IMX Assembly Line EXAMPLE: THIS IS A 9TQ05 LOT CODE 789 ASSEMBLED ON WW 9, 00 IN THE ASSEMBLY LINE "C" INTENATIONAL ECTIFIE LOGO ASSEMBLY LOT CODE PAT NUMBE DATE CODE YEA = 00 WEEK 9 P = LEAD-FEE 5

6 9TQ05PbF Bulletin PD-0840 rev. B 04/06 Ordering Information Table Device Code 9 T Q 05 PbF Current ating (9 = 9A) - Package T = TO Schottky "Q" Series 4 - oltage ating (05 = 5) 5 - none = Standard Production PbF = Lead-Free Tube Standard Pack Quantity : 50 pieces Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on I's Web site. I WOLD HEADQUATES: 33 Kansas St., El Segundo, California 9045, USA Tel: (30) TAC Fax: (30) isit us at for sales contact information. 04/06 6

STPS40L15CW. 2 x 20 Amps SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 40Amp V R = 15V. Bulletin PD-20622 rev. B 10/06. Description/ Features

STPS40L15CW. 2 x 20 Amps SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 40Amp V R = 15V. Bulletin PD-20622 rev. B 10/06. Description/ Features Bulletin PD-20622 rev. B 0/06 STPS40L5CW SCHOTTKY RECTIFIER 2 x 20 Amps I F(AV) = 40Amp V R = 5V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 40 A waveform V RRM 5

More information

STPS20L15DPbF SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 20Amp V R = 15V. Bulletin PD-20873 rev. A 02/07. Major Ratings and Characteristics

STPS20L15DPbF SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 20Amp V R = 15V. Bulletin PD-20873 rev. A 02/07. Major Ratings and Characteristics STPS20L5DPbF SCHOTTKY RECTIFIER 20 Amps I F(AV) = 20Amp V R = 5V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 20 A waveform V RRM 5 V I FSM @ tp = 5 μs sine 700 A

More information

Description/Features 5.59 (.220) 6.22 (.245) 6.60 (.260) 7.11 (.280).152 (.006).305 (.012) 2.00 (.079) 2.62 (.103).102 (.004) 0.76 (.030) 1.52 (.

Description/Features 5.59 (.220) 6.22 (.245) 6.60 (.260) 7.11 (.280).152 (.006).305 (.012) 2.00 (.079) 2.62 (.103).102 (.004) 0.76 (.030) 1.52 (. MBRS360TR SCHOTTKY RECTIFIER 3 Amp SMC Major Ratings and Characteristics Characteristics MBRS360TR Units I F(AV) Rectangular 3.0 A waveform V RRM 60 V I FSM @ t p = 5 µs sine 790 A V F @ 3.0 Apk, T = 25

More information

10MQ100N SCHOTTKY RECTIFIER. I F(AV) = 2.1Amp V R = 100V. Bulletin PD-20520 rev. M 07/04. Major Ratings and Characteristics. Description/ Features

10MQ100N SCHOTTKY RECTIFIER. I F(AV) = 2.1Amp V R = 100V. Bulletin PD-20520 rev. M 07/04. Major Ratings and Characteristics. Description/ Features 0MQ00N SCHOTTKY RECTIFIER 2. Amp I F(AV) = 2.Amp V R = 00V Major Ratings and Characteristics Characteristics 0MQ00N Units I F DC 2. A V RRM 00 V I FSM @ tp = 5 µs sine 20 A V F @.5Apk, T =25 C 0.68 V J

More information

30BQ100PbF SCHOTTKY RECTIFIER. 3 Amp. I F(AV) = 3.0Amp V R = 100V. Bulletin PD-20409 rev. C 01/07. Major Ratings and Characteristics

30BQ100PbF SCHOTTKY RECTIFIER. 3 Amp. I F(AV) = 3.0Amp V R = 100V. Bulletin PD-20409 rev. C 01/07. Major Ratings and Characteristics 30BQ00PbF SCHOTTKY RECTIFIER 3 Amp I F(AV) = 3.0Amp V R = 00V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 3.0 A waveform V RRM 00 V I FSM @ t p = 5 μs sine 800 A

More information

Schottky Rectifier, 100 A

Schottky Rectifier, 100 A Schottky Rectifier, A VS-BGQ Cathode Anode PowerTab PRODUCT SUMMARY Package PowerTab I F(AV) A V R V V F at I F 0.82 V I RM 180 ma at 125 C T J max. 175 C Diode variation Single die E AS 9 mj FEATURES

More information

Characteristics Values Units. Rectangular waveform 0.5 A. range - 55 to 150 C

Characteristics Values Units. Rectangular waveform 0.5 A. range - 55 to 150 C Bulletin I075 rev. C 05/06 IR0530CSPTRPbF 0.5 Amp 30 Volt Features Ultra Low V F To Footprint Area Very Low Profile (

More information

8ETH06 8ETH06S 8ETH06-1 8ETH06FP

8ETH06 8ETH06S 8ETH06-1 8ETH06FP Bulletin PD-0746 rev. D 03/03 8ETH06 8ETH06S 8ETH06-8ETH06FP Hyperfast Rectifier Features Hyperfast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating unction Temperature UL E78996

More information

Schottky Rectifier, 1 A

Schottky Rectifier, 1 A Schottky Rectifier, 1 A BQPbF FEATURES SMB Cathode Anode Small foot print, surface mountable Low forward voltage drop High frequency operation Available RoHS* COMPLIANT Guard ring for enhanced ruggedness

More information

Features Benefits Description TO-247AC (Modified) Absolute Maximum Ratings Parameter Max Units

Features Benefits Description TO-247AC (Modified) Absolute Maximum Ratings Parameter Max Units Bulletin PD -.338 rev. B /4 HEXFRED TM HFA5PB6 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced

More information

MUR1520 MURB1520 MURB1520-1

MUR1520 MURB1520 MURB1520-1 MUR520 MURB520 MURB520- Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 35ns I F(AV) = 5Amp V R = 200V Description/

More information

Schottky Rectifier, 1.0 A

Schottky Rectifier, 1.0 A Schottky Rectifier, 1.0 A VS-BQ040-M3 Cathode Anode PRODUCT SUMMARY Package SMB I F(AV) 1.0 A V R 40 V V F at I F 0.38 V I RM 9 ma at 125 C T J max. 150 C Diode variation Single die E AS 3.0 mj FEATURES

More information

High Performance Schottky Rectifier, 1 A

High Performance Schottky Rectifier, 1 A High Performance Schottky Rectifier, A VS-MQNPbF Cathode Anode DO-24AC (SMA) PRODUCT SUMMARY Package DO-24AC (SMA) I F(AV) A V R V V F at I F.78 V I RM ma at 25 C T J max. 5 C Diode variation Single die

More information

Schottky Rectifier, 1.0 A

Schottky Rectifier, 1.0 A Schottky Rectifier, 1.0 A VS-BQ060PbF Vishay High Power Products FEATURES Small foot print, surface mountable Low forward voltage drop SMB Cathode Anode High frequency operation Guard ring for enhanced

More information

High Performance Schottky Rectifier, 3.0 A

High Performance Schottky Rectifier, 3.0 A High Performance Schottky Rectifier, 3. A Cathode Anode SMC PRODUCT SUMMARY Package SMC I F(AV) 3. A V R 4 V V F at I F.46 V I RM 3 ma at 25 C T J max. 5 C Diode variation Single die E AS 6. mj FEATURES

More information

High Performance Schottky Rectifier, 1.0 A

High Performance Schottky Rectifier, 1.0 A High Performance Schottky Rectifier, 1. A VS-BQ3-M3 Cathode Anode SMB PRODUCT SUMMARY Package SMB I F(AV) 1. A V R 3 V V F at I F.42 V I RM max. 15 ma at 125 C T J max. 15 C Diode variation Single die

More information

HFA15TB60 HFA15TB60-1

HFA15TB60 HFA15TB60-1 HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor

More information

Ultrafast Soft Recovery Diode, 150 A FRED Pt

Ultrafast Soft Recovery Diode, 150 A FRED Pt Ultrafast Soft Recovery Diode, 50 A FRED Pt PowerTab Cathode Anode FEATURES Ultrafast recovery time 75 C max. operating junction temperature Screw mounting only AEC-Q0 qualified PowerTab package Material

More information

SK54B SCHOTTKY RECTIFIER

SK54B SCHOTTKY RECTIFIER Applications: SCHOTTKY RECTIFIER Features: Switching power supply Converters Free-Wheeling diodes Reverse battery protection Disk drives Battery charging Small foot print, surface mountable Very low forward

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced

More information

HFA08TB60. Ultrafast, Soft Recovery Diode HEXFRED TM TO-220AC. Bulletin PD -2.341 rev. A 11/00

HFA08TB60. Ultrafast, Soft Recovery Diode HEXFRED TM TO-220AC. Bulletin PD -2.341 rev. A 11/00 Bulletin PD -.34 rev. A / HEXFRED TM HFA8TB6 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced

More information

Ultrafast Soft Recovery Diode, 150 A FRED Pt

Ultrafast Soft Recovery Diode, 150 A FRED Pt Ultrafast Soft Recovery Diode, 150 A FRED Pt Powerab Cathode Anode FEAURES Ultrafast recovery time 175 C max. operating junction temperature Screw mounting only Designed and qualified according to EDEC

More information

IRLR8729PbF IRLU8729PbF

IRLR8729PbF IRLU8729PbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits

More information

Ultrafast, Soft Recovery Diode (N/C)

Ultrafast, Soft Recovery Diode (N/C) Bulletin PD -060 rev. C /00 HFA06TB0S.. Series HEXFRED TM Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits

More information

IRF5305PbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.06Ω I D = -31A

IRF5305PbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.06Ω I D = -31A dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize

More information

IRFP460LC PD - 9.1232. HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.27Ω I D = 20A

IRFP460LC PD - 9.1232. HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.27Ω I D = 20A HEXFET Power MOSFET PD - 9.232 IRFP460LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced

More information

MT..KB SERIES 55 A 90 A 110 A THREE PHASE CONTROLLED BRIDGE. Power Modules. Features. Description. Major Ratings and Characteristics

MT..KB SERIES 55 A 90 A 110 A THREE PHASE CONTROLLED BRIDGE. Power Modules. Features. Description. Major Ratings and Characteristics MT..KB SERIES THREE PHASE CONTROLLED BRIDGE Power Modules Features Package fully compatible with the industry standard INT-A-pak power modules series High thermal conductivity package, electrically insulated

More information

RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000

RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000 PD 97437A IRF93PbF HEXFET Power MOSFET V DS 30 V R DS(on) max (@V GS = V) I D (@T A = 25 C) 4. mω 20 A * SO8 Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits

More information

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) PD 9399A AUTOMOTIVE MOSFET Typical Applications Electric Power Steering (EPS) Antilock Braking System (ABS) Wiper Control Climate Control Power Door Benefits Advanced Process Technology Ultra Low OnResistance

More information

V DSS R DS(on) max Qg. 30V 3.2mΩ 36nC

V DSS R DS(on) max Qg. 30V 3.2mΩ 36nC PD - 96232 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification

More information

Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 95 A

Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 95 A Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 95 A 95PF(R)... DO-203AB (DO-5) PRODUCT SUMMARY I F(AV) Package Circuit configuration 95PF(R)...W DO-203AB (DO-5) 95 A DO-203AB (DO-5) Single

More information

SMPS MOSFET. V DSS R DS(on) max I D. -150V GS = -10V -27A. -110 P C = 25 C Maximum Power Dissipation 250 Linear Derating Factor

SMPS MOSFET. V DSS R DS(on) max I D. -150V GS = -10V -27A. -110 P C = 25 C Maximum Power Dissipation 250 Linear Derating Factor pplications l Reset Switch for ctive Clamp Reset DC-DC converters SMPS MOSFET PD - 95862 HEXFET Power MOSFET V DSS R DS(on) max I D -150V 150m:@ = -V -27 Benefits l Low Gate to Drain Charge to Reduce Switching

More information

Standard Recovery Diodes, (Stud Version), 40 A

Standard Recovery Diodes, (Stud Version), 40 A Standard Recovery Diodes, (Stud ersion), 40 A S- FEATURES High surge current capability Stud cathode and stud anode version Leaded version available DO-203AB (DO-5) PRODUCT SUMMARY I F(A) 40 A Package

More information

IRGP4068DPbF IRGP4068D-EPbF

IRGP4068DPbF IRGP4068D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low V CE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature

More information

IRF6201PbF. HEXFET Power MOSFET V DS 20 V. R DS(on) max. 2.75 mω. Q g (typical) 130 nc 27 A. Absolute Maximum Ratings

IRF6201PbF. HEXFET Power MOSFET V DS 20 V. R DS(on) max. 2.75 mω. Q g (typical) 130 nc 27 A. Absolute Maximum Ratings PD - 97500A IRF620PbF V DS 20 V HEXFET Power MOSFET R DS(on) max (@ = 4.5V) 2.45 mω 6 R DS(on) max (@ = 2.5V) 2.75 mω 6 6 Q g (typical) 30 nc * SO-8 I D (@T A = 25 C) 27 A Applications OR-ing or hot-swap

More information

Lower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)

Lower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W) PD -97428 IRFH5020PbF HEXFET Power MOSFET V DS 200 V 55 m: R DS(on) max (@V GS = V) Q g (typical) 36 nc R G (typical).9 : I D (@T c(bottom) = 25 C) 43 A PQFN 5X6 mm Applications Secondary Side Synchronous

More information

PDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information

PDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information Green 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI 5 Product Summary I F V R V F MAX (V) I R MAX (ma) (V) (A) @ +25 C @ +25 C 1 5..71.35 Description and Applications This Schottky Barrier Rectifier

More information

Features / Advantages: Applications: Package: SOT-227B (minibloc)

Features / Advantages: Applications: Package: SOT-227B (minibloc) ED M = I A = x 9A t = ns rr ast ecovery Epitaxial Diode Low Loss and Soft ecovery Parallel legs Part number DSEIx-A Backside: isolated eatures / Advantages: Applications: Package: SOT-7B (minibloc) Planar

More information

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated

More information

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET

More information

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) PD - 9569 NSULTED GTE BPOLR TRNSSTOR RG4B30UPbF UltraFast Speed GBT Features UltraFast: optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 GBT design

More information

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

IRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings

IRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF150 100V 0.055Ω 38A IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543]

More information

Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20

Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 10 V 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel

More information

SMPS MOSFET. V DSS R DS (on) max I D

SMPS MOSFET. V DSS R DS (on) max I D Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 93773A IRF820A HEXFET Power MOSFET V DSS R DS (on) max I D 500V 3.0Ω 2.5A Benefits

More information

PMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.

PMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1. Rev. 04 30 December 2008 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for

More information

SELF-OSCILLATING HALF-BRIDGE DRIVER

SELF-OSCILLATING HALF-BRIDGE DRIVER Data Sheet No. PD60029 revj I2155&(PbF) (NOTE: For new designs, we recommend I s new products I2153 and I21531) SELF-OSCILLATING HALF-BIDGE DIE Features Floating channel designed for bootstrap operation

More information

A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units

A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units V DS 2 V V GS Max ± 2 V R DSon) max @V GS = V) 24 m * PD - 9787A HEXFET Power MOSFET R DSon) max @V GS = 4.V) 4 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits

More information

A I DM. W/ C V GS Gate-to-Source Voltage ± 12. Thermal Resistance Symbol Parameter Typ. Max. Units

A I DM. W/ C V GS Gate-to-Source Voltage ± 12. Thermal Resistance Symbol Parameter Typ. Max. Units V DS 2 V V GS Max ±2 V * PD - 973A HEXFET Power MOSFET R DSon) max @V GS = 4.V) 2. m R DSon) max @V GS = 2.V) 27. m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits

More information

5SDD 92Z0401. Housingless Welding Diode. I FAVm = 9 244 A I FSM = 60 000 A V TO = 0.780 V Applications r T = 0.031 m. Types.

5SDD 92Z0401. Housingless Welding Diode. I FAVm = 9 244 A I FSM = 60 000 A V TO = 0.780 V Applications r T = 0.031 m. Types. SDD 92Z41 Housingless Welding Diode Properties SDD 92Z41 Key Parameters High forward current capability V RRM = 4 V Low forward and reverse recovery losses I FAVm = 9 244 A I FSM = 6 A V TO =.78 V Applications

More information

Surface Mount Schottky Barrier

Surface Mount Schottky Barrier FEATURES - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level, per J-STD-020 - Compliant to RoHS Directive

More information

IRF3710. HEXFET Power MOSFET V DSS = 100V. R DS(on) = 23mΩ I D = 57A

IRF3710. HEXFET Power MOSFET V DSS = 100V. R DS(on) = 23mΩ I D = 57A PD - 91309C IRF37 HEXFET Power MOSFET Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fuy Avaanche Rated G D S V DSS = 0V R DS(on) = 23mΩ

More information

Medium power Schottky barrier single diode

Medium power Schottky barrier single diode Rev. 03 17 October 2008 Product data sheet 1. Product profile 1.1 General description Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated

More information

IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET

IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free

More information

STPS5L60. Power Schottky rectifier. Description. Features

STPS5L60. Power Schottky rectifier. Description. Features Power Schottky rectifier Datasheet - production data Description Power Schottky rectifier suited for switch mode power supplies and high frequency inverters. This device is intended for use in low voltage

More information

PMEG3005EB; PMEG3005EL

PMEG3005EB; PMEG3005EL Rev. 0 29 November 2006 Product data sheet. Product profile. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress

More information

A I DM. -55 to + 175 T STG. Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw

A I DM. -55 to + 175 T STG. Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw IGITL UIO MOSFET P 9673 IRFB565PbF Features Key Parameters Optimized for Class udio mplifier pplications Low R SON for Improved Efficiency Low Q G and Q SW for Better TH and Improved Efficiency Low Q RR

More information

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching

More information

W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.0. V/ns T J. mj I AR. Thermal Resistance Symbol Parameter Typ. Max.

W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.0. V/ns T J. mj I AR. Thermal Resistance Symbol Parameter Typ. Max. PD 9727 IRFP326PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits

More information

Power MOSFET FEATURES. IRF740APbF SiHF740A-E3 IRF740A SiHF740A

Power MOSFET FEATURES. IRF740APbF SiHF740A-E3 IRF740A SiHF740A Power MOSFET PRODUCT SUMMARY V DS (V) 400 R DS(on) ( ) = 0 V 0.55 Q g (Max.) (nc) 36 Q gs (nc) 9.9 Q gd (nc) 6 Configuration Single D TO220AB G FEATURES Low Gate Charge Q g Results in Simple Drive Requirement

More information

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

PMEG3015EH; PMEG3015EJ

PMEG3015EH; PMEG3015EJ Rev. 03 13 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for

More information

SMPS MOSFET. V DSS Rds(on) max I D

SMPS MOSFET. V DSS Rds(on) max I D Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 92004 IRF740A HEXFET Power MOSFET V DSS Rds(on) max I D 400V 0.55Ω A Benefits

More information

AUIRLR2905 AUIRLU2905

AUIRLR2905 AUIRLU2905 Features dvanced Planar Technology Logic Level Gate Drive Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free,

More information

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 5.0 V 0.077 Q g (Max.) (nc) 64 Q gs (nc) 9.4 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel

More information

V DS 100 V R DS(ON) typ. @ 10V 72.5 m: Q g typ. 15 nc Q sw typ. 8.3 nc R G(int) typ. 2.2 Ω T J max 175 C

V DS 100 V R DS(ON) typ. @ 10V 72.5 m: Q g typ. 15 nc Q sw typ. 8.3 nc R G(int) typ. 2.2 Ω T J max 175 C PD 9698A DIGITAL AUDIO MOSFET IRFB422PbF Features Key parameters optimized for ClassD audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency

More information

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION TO-263 TO-25 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast

More information

91 P D @T C = 25 C Power Dissipation 330 P D @T C = 100 C Power Dissipation Linear Derating Factor

91 P D @T C = 25 C Power Dissipation 330 P D @T C = 100 C Power Dissipation Linear Derating Factor PD - 9778 IRFB4229PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation in PDP

More information

Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640

Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640 Power MOSFET PRODUCT SUMMARY V DS (V) 200 R DS(on) (Ω) = 10 V 0.50 Q g (Max.) (nc) 44 Q gs (nc) 7.1 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D

More information

STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE V DSS R DS(on) I D STP62NS04Z CLAMPED

More information

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC Rev. 8 18 November 2010 Product data sheet 1. Product profile 1.1 General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package

More information

n-channel t SC 5μs, T J(max) = 175 C V CE(on) typ. = 1.65V

n-channel t SC 5μs, T J(max) = 175 C V CE(on) typ. = 1.65V IRGP463DPbF IRGP463D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 C 5 μs

More information

V DSS I D. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175

V DSS I D. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175 PD 973B IRFB432PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low

More information

PMEG2020EH; PMEG2020EJ

PMEG2020EH; PMEG2020EJ Rev. 04 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for

More information

Features. Symbol JEDEC TO-220AB

Features. Symbol JEDEC TO-220AB Data Sheet June 1999 File Number 2253.2 3A, 5V,.4 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching

More information

MBR2045CT SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS

MBR2045CT SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS Preferred Device... using the Schottky Barrier principle with a platinum barrier metal. These state of the art devices have the following features: Guardring for Stress Protection Low Forward Voltage 150

More information

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.077 Q g (Max.) (nc) 72 Q gs (nc) 11 Q gd (nc) 32 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET

More information

High Efficiency Thyristor

High Efficiency Thyristor LE2HB High Efficiency hyristor 2 M.4 Single hyristor Part number LE2HB Backside: anode 2 Features / dvantages: pplications: Package: O-247 hyristor for line frequency Planar passivated chip Long-term stability

More information

SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS

SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS 1N5817 and 1N5819 are Preferred Devices... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features chrome barrier metal, epitaxial construction

More information

@V GE = 15V, I C = 28A Latest technology IGBT design offers tighter parameter distribution coupled with exceptional n-channel reliability

@V GE = 15V, I C = 28A Latest technology IGBT design offers tighter parameter distribution coupled with exceptional n-channel reliability PD - 97 INSULATED GATE BIPOLAR TRANSISTOR IRG4PF5W Features C Optimized for use in Welding and Switch-Mode Power Supply applications V CES = 9V Industry benchmark switching losses improve efficiency of

More information

STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET

STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

More information

Dual Common-Cathode Ultrafast Plastic Rectifier

Dual Common-Cathode Ultrafast Plastic Rectifier (F,B)6AT thru (F,B)6JT Dual Common-Cathode Ultrafast Plastic Rectifier TO-0AB 6xT PIN PIN 3 PIN CASE 3 TO-63AB ITO-0AB F6xT PIN PIN 3 PIN 3 FEATURES Glass passivated chip junction Ultrafast recovery time

More information

P6KE6.8A thru P6KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. www.vishay.com FEATURES PRIMARY CHARACTERISTICS

P6KE6.8A thru P6KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. www.vishay.com FEATURES PRIMARY CHARACTERISTICS TRANSZORB Transient Voltage Suppressors DO-204AC (DO-15) PRIMARY CHARACTERISTICS V WM 5.8 V to 459 V V BR uni-directional 6.8 V to 540 V V BR bi-directional 6.8 V to 440 V P PPM 600 W P D 5.0 W I FSM (uni-directional

More information

200V, N-CHANNEL. Absolute Maximum Ratings. Features: www.irf.com 1 PD - 90370

200V, N-CHANNEL. Absolute Maximum Ratings. Features: www.irf.com 1 PD - 90370 PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF240 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF240 200V 0.18Ω 18A The HEXFET technology

More information

V DSS Rds(on) max I D

V DSS Rds(on) max I D Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,

More information

STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET

STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STB80NF55-08/-1 STP80NF55-08 55 V 55 V

More information

AUTOMOTIVE GRADE. Base part number Package Type Standard Pack Orderable Part Number

AUTOMOTIVE GRADE. Base part number Package Type Standard Pack Orderable Part Number UTOMOTVE GRDE URG4P40S-E nsulated Gate Bipolar Transistor Features V ES = 600V Standard: Optimized for minimum saturation voltage and low operating frequencies ( < khz) Generation 4 GBT design provides

More information

Schottky barrier quadruple diode

Schottky barrier quadruple diode Rev. 3 8 October 2012 Product data sheet 1. Product profile 1.1 General description with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated

More information

DISCRETE SEMICONDUCTORS DATA SHEET

DISCRETE SEMICONDUCTORS DATA SHEET DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D49 Schottky barrier rectifiers 23 Aug 2 FEATURES Very low forward voltage High surge current Very small plastic SMD package. APPLICATIONS Low voltage

More information

1N5820, 1N5821, 1N5822. Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS

1N5820, 1N5821, 1N5822. Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS 1N58, 1N5821, 1N5822 1N58 and 1N5822 are Preferred Devices Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features

More information

W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 38. V/ns T J. mj I AR

W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 38. V/ns T J. mj I AR PD 967 IRFB465PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S V DSS HEXFET

More information

BAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description

BAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description SOT2 Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small SOT2 (TO-26AB) Surface-Mounted

More information

DATA SHEET. PMEGXX10BEA; PMEGXX10BEV 1 A very low V F MEGA Schottky barrier rectifier DISCRETE SEMICONDUCTORS

DATA SHEET. PMEGXX10BEA; PMEGXX10BEV 1 A very low V F MEGA Schottky barrier rectifier DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 24 Apr 2 24 Jun 4 FEATURES Forward current: A Reverse voltages: 2 V, 3 V, 4 V Very low forward voltage Ultra small and very small plastic SMD package

More information

5STP 21H4200 Old part no. TV 989-2100-42

5STP 21H4200 Old part no. TV 989-2100-42 Phase Control Thyristor Properties 5STP 1H Old part no. T 989-1- Key Parameters High operational capability DRM, RRM = Possibility of serial and parallel connection I TAm = 19 A Applications I TSM = 3

More information

W/ C V GS Gate-to-Source Voltage ± 16 dv/dt Peak Diode Recovery e 21

W/ C V GS Gate-to-Source Voltage ± 16 dv/dt Peak Diode Recovery e 21 PD 97369 IRLB43PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits

More information

STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET

STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type V DSS R DS(on) I D STW34NB20 200 V < 0.075 Ω 34 A FEATURES SUMMARY TYPICAL R DS(on) = 0.062 Ω EXTREMELY

More information

Y.LIN ELECTRONICS CO.,LTD.

Y.LIN ELECTRONICS CO.,LTD. Features Current transfer ratio (CTR 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up to +110 C Compact

More information