DMG4800LSD. Product Summary. Features and Benefits. Description. Mechanical Data. Applications. Ordering Information (Notes 4 & 5) Marking Information

Size: px
Start display at page:

Download "DMG4800LSD. Product Summary. Features and Benefits. Description. Mechanical Data. Applications. Ordering Information (Notes 4 & 5) Marking Information"

Transcription

1 MG48LS UL N-CHNNEL ENHNCEMENT MOE MOSFET Product Summary V (BR)SS 3V escription R S(on) max I max T = +25 C V = 1V 9.8 V = 4.5V 8.4 This MOSFET has been designed to minimize the on-state resistance (R S(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. pplications Backlighting Power Management Functions C-C Converters Features and Benefits 1% avalanche rated part Low R S(on) - minimizes conduction losses Low Q g - minimizes switching losses Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and ntimony Free. Green evice (Note 3) Qualified to EC-Q11 standards for High Reliability PPP Capable (Note 4) Mechanical ata Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level 1 per J-ST-2 Terminal Connections Indicator: See iagram Terminals: Finish Matte Tin nnealed over Copper Leadframe. Solderable per MIL-ST-22, Method 28 e3 Weight:.76 grams (approximate) Top View SO G 1 G 2 Top View Pin Configuration Internal Schematic S 1 N-Channel MOSFET S 2 N-Channel MOSFET Ordering Information (Notes 4 & 5) Part Number Compliance Case Packaging MG48LS-13 Standard SO-8 2,5 / Tape & Reel MG48LSQ-13 utomotive SO-8 2,5 / Tape & Reel Notes: 1. No purposely added lead. Fully EU irective 22/95/EC (RoHS) & 211/65/EU (RoHS 2) compliant. 2. See for more information about iodes Incorporated s definitions of Halogen- and ntimony-free, "Green" and Lead-free. 3. Halogen- and ntimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<15ppm total Br + Cl) and <1ppm antimony compounds. 4. utomotive products are EC-Q11 qualified and are PPP capable. utomotive, EC-Q1x and standard products are electrically and thermally the same, except where specified. For more information, please refer to 5. For packaging details, go to our website at Marking Information 8 5 G48L YY WW 1 4 Chengdu /T Site 8 5 G48L YY WW 1 4 Shanghai /T Site = Manufacturer s Marking G48L = Product Type Marking Code YYWW = ate Code Marking YY or YY = Year (ex: 14 = 214) WW = Week (1-53) YY = ate Code Marking for ST (Shanghai ssembly/ Test site) YY = ate Code Marking for CT (Chengdu ssembly/ Test site) MG48LS 1 of 6 July 214

2 MG48LS Maximum Ratings = +25 C, unless otherwise specified.) Characteristic Symbol Value Units rain-source Voltage V SS 3 V Gate-Source Voltage V S ±25 V Continuous rain Current (Note 7) V = 1V Steady T = +25 C 7.5 I State T = +7 C 6. T t<1s = +25 C 9.8 I T = +7 C 7.7 Continuous rain Current (Note 7) V = 4.5V Steady T = +25 C 6.4 I State T = +7 C 5. T t<1s = +25 C 8.4 I T = +7 C 6.6 Maximum Continuous Body iode Forward Current (Note 7) I S 2 Pulsed rain Current (1µs pulse, duty cycle = 1%) I M 42 valanche Current (Notes 8 & 9) L =.1mH I R 17 Repetitive valanche Energy (Notes 8 & 9) L =.1mH E R 14 mj Thermal Characteristics Characteristic Symbol Value Units Total Power issipation (Note 6) P 1.17 W Thermal Resistance, Junction to mbient (Note 6) Steady State 17 R t<1s θj 61 C/W Total Power issipation (Note 7) P 1.5 W Thermal Resistance, Junction to mbient (Note 7) Steady State 83 R t<1s θj 49 C/W Thermal Resistance, Junction to Case R θjc 14.5 Operating and Storage Temperature Range T J, T STG -55 to 15 C Electrical Characteristics (@T = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHRCTERISTICS (Note 1) rain-source Breakdown Voltage BV SS 3 V V = V, I = 25μ Zero Gate Voltage rain Current T J = +25 C I SS 1. μ V S = 3V, V = V Gate-Source Leakage I S ±1 n V = ±2V, V S = V ON CHRCTERISTICS (Note 1) Gate Threshold Voltage V (th) V V S = V, I = 25μ Static rain-source On-Resistance R S(on) mω V = 1V, I = 9 V = 4.5V, I = 7 Forward Transfer dmittance Y fs 8 S V S = 1V, I = 9 iode Forward Voltage V S V V = V, I S = 1 YNMIC CHRCTERISTICS (Note 11) Input Capacitance C iss 798 pf V S = 1V, V = V, f = 1.MHz Output Capacitance C oss 128 pf Reverse Transfer Capacitance C rss 122 pf Gate Resistance R g 1.37 Ω V S = V, V = V, f = 1MHz Total Gate Charge Q g 8.56 nc Gate-Source Charge Q gs 1.8 nc Gate-rain Charge Q gd 2.5 nc Turn-On elay Time t (on) 5.3 ns Turn-On Rise Time t r 4.5 ns Turn-Off elay Time t (off) ns Turn-Off Fall Time t f 8.55 ns Notes: 6. evice mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. evice mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. I R and E R rating are based on low frequency and duty cycles to keep T J = +25 C. 9. pplicable to products manufactured with ata Code 1146 (Nov, 211) and newer. 1. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. V = 5V, V S = 15V, I = 9 V = 15V, V GEN = 1V, R L = 15Ω, R G = 6Ω, I = 1 MG48LS 2 of 6 July 214

3 MG48LS I, RIN CURRENT () V = 1V V = 4.5V V = 3.V V = 2.5V V = 2.V V S, RIN-SOURCE VOLTGE (V) Fig. 1 Typical Output Characteristic I, RIN CURRENT () V = 5V S T = 15 C T = 125 C T = 85 C T = 25 C T = -55 C V, GTE-SOURCE VOLTGE (V) Fig. 2 Typical Transfer Characteristic R S(ON), RIN-SOURCE ON-RESISTNCE ( ) 1.1 V = 2.5V V = 4.5V I, RIN-SOURCE CURRENT () Fig. 3 Typical On-Resistance vs. rain Current and Gate Voltage R S(ON), RIN-SOURCE ON-RESISTNCE ( ) V = 4.5V T = 15 C T = 125 C T = 85 C T = 25 C T = -55 C I, RIN CURRENT () Fig. 4 Typical On-Resistance vs. rain Current and Temperature R SON, RIN-SOURCE ON-RESISTNCE (NORMLIZE) V = 4.5V I = 1 V = 1V I = T, MBIENT TEMPERTURE ( C) Fig. 5 On-Resistance Variation with Temperature R SON, RIN-SOURCE ON-RESISTNCE ( ) V = 4.5V I = 1 V = 1V I = T, MBIENT TEMPERTURE ( C) Fig. 6 On-Resistance Variation with Temperature MG48LS 3 of 6 July 214

4 MG48LS V (TH), GTE THRESHOL VOLTGE (V) I = 25µ I = 1m T, MBIENT TEMPERTURE ( C) Fig. 7 Gate Threshold Variation vs. mbient Temperature I, SOURCE CURRENT () S T = 25 C V S, SOURCE-RIN VOLTGE (V) Fig. 8 iode Forward Voltage vs. Current 1, 1 C, CPCITNCE (pf) 1, 1 C iss C oss C rss V, GTE-SOURCE VOLTGE (V) I = V S, RIN-SOURCE VOLTGE (V) Fig. 9 Typical Total Capacitance Q G, TOTL GTE CHRGE (nc) Fig. 1 Total Gate Charge 1, I SS, LEKGE CURRENT (n) 1, 1, 1 1 T = -55 C T = 15 C T = 125 C T = 85 C T = 25 C V S, RIN-SOURCE VOLTGE (V) Fig. 11 Typical Leakage Current vs. rain-source Voltage MG48LS 4 of 6 July 214

5 MG48LS r(t), TRNSIENT THERML RESISTNCE =.7 =.5 =.3 =.1 =.5 =.2 =.1 =.9 R J(t) = r(t) * R J R J = 16 C/W =.5 t 2 T J - T = P * R J(t) uty Cycle, = t 1/t2 = Single Pulse , t 1, PULSE URTION TIME (s) Fig. 12 Transient Thermal Response P(pk) t 1 Package Outline imensions Please see P21 at for the latest version. e b E1 2 E 3 1 h etail 45 L ~9 Gauge Plane Seating Plane etail SO-8 im Min Max b E E e 1.27 Typ h -.35 L ll imensions in mm Suggested Pad Layout Please see P21 at for the latest version. X C2 C1 imensions Value (in mm) X.6 Y 1.55 C1 5.4 C Y MG48LS 5 of 6 July 214

6 MG48LS IMPORTNT NOTICE IOES INCORPORTE MKES NO WRRNTY OF NY KIN, EXPRESS OR IMPLIE, WITH REGRS TO THIS OCUMENT, INCLUING, BUT NOT LIMITE TO, THE IMPLIE WRRNTIES OF MERCHNTBILITY N FITNESS FOR PRTICULR PURPOSE (N THEIR EQUIVLENTS UNER THE LWS OF NY JURISICTION). iodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. iodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does iodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. ny Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold iodes Incorporated and all the companies whose products are represented on iodes Incorporated website, harmless against all damages. iodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use iodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold iodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by iodes Incorporated. LIFE SUPPORT iodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of iodes Incorporated. s used herein:. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of iodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by iodes Incorporated. Further, Customers must fully indemnify iodes Incorporated and its representatives against any damages arising out of the use of iodes Incorporated products in such safety-critical, life support devices or systems. Copyright 214, iodes Incorporated MG48LS 6 of 6 July 214

T A = 25 C (Notes 3 & 5) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMC4040SSD-13 C4040SD 13 12 2,500

T A = 25 C (Notes 3 & 5) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMC4040SSD-13 C4040SD 13 12 2,500 Product Line of 4 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(on) max I D max () T = 25 C (Notes 3 & 5) 25mΩ @ = 1 7.5 Q1 4 4mΩ @ = 4.5 6.2 Features and Benefits Matched

More information

PDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information

PDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information Green 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI 5 Product Summary I F V R V F MAX (V) I R MAX (ma) (V) (A) @ +25 C @ +25 C 1 5..71.35 Description and Applications This Schottky Barrier Rectifier

More information

Features. Case: TO-220-3 (2), TO-220F-3 (Option 1), TO-252-2 (1) and TO- 263-2 Power Management Instrumentation

Features. Case: TO-220-3 (2), TO-220F-3 (Option 1), TO-252-2 (1) and TO- 263-2 Power Management Instrumentation HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V F (MAX) (V) I R (MAX) (ma) V RRM (V) I O (A) @ +25 C @ +25 C 100 2x10 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch

More information

74LVC1G14. Description. Pin Assignments. Features. Applications SINGLE SCHMITT-TRIGGER INVERTER 74LVC1G14

74LVC1G14. Description. Pin Assignments. Features. Applications SINGLE SCHMITT-TRIGGER INVERTER 74LVC1G14 SINGLE SCHMITT-TRIGGER INVERTER Description Pin ssignments The is a single 1-input Schmitt-trigger inverter with a standard push-pull output. The device is designed for operation with a power supply range

More information

Green. Part Number Qualification Case Packaging B1X0Q-13-F Automotive SMA 5,000/Tape & Reel B1X0BQ-13-F Automotive SMB 3,000/Tape & Reel

Green. Part Number Qualification Case Packaging B1X0Q-13-F Automotive SMA 5,000/Tape & Reel B1X0BQ-13-F Automotive SMB 3,000/Tape & Reel reen 1.0A SURFAE MOUNT SHOTTKY BARRIER RETIFIER Product Summary B120Q/BQ-B140Q/BQ V RRM (V) I O (A) V F Max (V) I R Max (ma) T A = +25 T A = +25 20/30/40 1.0 0.5 0.5 B150Q/BQ, B160Q/BQ V F Max (V) I R

More information

1.0A LOW DROPOUT LINEAR REGULATOR

1.0A LOW DROPOUT LINEAR REGULATOR 1.0A LOW DROPOUT LINEAR REGULATOR Description Pin Assignments The is a low dropout three-terminal regulator with 1.0A output current ability, and the dropout voltage is specified at typical 1.1V at 1.0A

More information

Features S 1. TA=25 o C unless otherwise noted. (Note 1b) 0.8

Features S 1. TA=25 o C unless otherwise noted. (Note 1b) 0.8 FC54P V P-Channel Logic Level PowerTrench MOSFET February 22 FC54P General escription This V P-Channel MOSFET uses Fairchild s high voltage PowerTrench process. It has been optimized for power management

More information

AUTOMOTIVE GRADE. Orderable Part Number AUIRF7805Q SO-8 Tape and Reel 4000 AUIRF7805QTR

AUTOMOTIVE GRADE. Orderable Part Number AUIRF7805Q SO-8 Tape and Reel 4000 AUIRF7805QTR UTOMOTIVE GRE UIRF7805Q Features dvanced Planar Technology Low On-Resistance Logic Level N Channel MOSFET Surface Mount vailable in Tape & Reel 150 C Operating Temperature Lead-Free, RoHS Compliant utomotive

More information

Features I-PAK (TO-251AA) T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units

Features I-PAK (TO-251AA) T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units F62A/FU62A 2V N-Channel PowerTrench MOSFET General escription This N-Channel MOSFET has been designed specifically to improve the overall efficiency of C/C converters using either synchronous or conventional

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET Si3456V N-Channel 3-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) d Q g (Typ.) 3.4 at V GS = V 6.3.5 at V GS = 4.5 V 5.7 TSOP-6 Top View.8 nc FEATURES Halogen-free According to IEC 649-- efinition

More information

TSM020N03PQ56 30V N-Channel MOSFET

TSM020N03PQ56 30V N-Channel MOSFET PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value Unit V DS 30 V R DS(on) (max) V GS = 10V 2 V GS = 4.5V 3 mω Q

More information

TSM2N7002K 60V N-Channel MOSFET

TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 5 @ V GS = 10V 100 60 5.5 @ V GS = 5V 100 Features Low On-Resistance ESD Protection High Speed Switching

More information

0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) Features 0.603 (15.32) 0.573 (14.55) 0.104 (2.64) 0.094 (2.39)

0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) Features 0.603 (15.32) 0.573 (14.55) 0.104 (2.64) 0.094 (2.39) *.6 (4.6).9 (2.28).25 (5.2).9 (4.83).45 (.54) Max..4 (.4).35 (8.89).54 (3.9).42 (3.6) ia. PIN S.48 (29.6).8 (28.4) * May be notched or flat.3 (2.87).2 (2.56).635 (6.3).58 (4.73).37 (.94).26 (.66).5 (2.67).95

More information

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features NTMS9N Power MOSFET 3 V, 7 A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices

More information

P-Channel 12 V (D-S) MOSFET

P-Channel 12 V (D-S) MOSFET New Product SiEH P-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) a Q g (Typ.) G -. at V GS = -.5 V -.6 at V GS = -.5 V -.7 at V GS = -.8 V -. at V GS = -.5 V - SOT-6 SC-7 (6-LEAS) Top

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET Si4DS N-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).4 at V GS = V..67 at V GS = 6 V..9 nc.78 at V GS = 4.5 V.7 FEATURES TrenchFET Power MOSFET % R g Tested

More information

Features 1.7 A, 20 V. R DS(ON) Symbol Parameter Ratings Units

Features 1.7 A, 20 V. R DS(ON) Symbol Parameter Ratings Units N-Channel.5V Specified PowerTrench TM MOSFET April 999 General Description This N-Channel.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET Si30CDS P-Channel 0 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 0 0. at V GS = - 4.5 V - 3. 0.4 at V GS = -.5 V -.7 3.3 nc TO-36 (SOT-3) FEATURES Halogen-free According

More information

2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor

2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor November 995 N7 / N7 / NS7A N-Channel Enhancement Mode Field Effect Transistor General escription Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary,

More information

P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET Si33DS P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).39 at V GS = -.5 V -.7 -.5 at V GS = -.5 V -..68 at V GS = -.8 V - 3.5 FEATURES Halogen-free According to IEC 69-- Available

More information

AP1509. 150KHz, 2A PWM BUCK DC/DC CONVERTER. Description. Pin Assignments V IN. Applications. Features. (Top View) GND GND. Output AP1509 GND GND

AP1509. 150KHz, 2A PWM BUCK DC/DC CONVERTER. Description. Pin Assignments V IN. Applications. Features. (Top View) GND GND. Output AP1509 GND GND Description Pin Assignments The series are monolithic IC designed for a stepdown DC/DC converter, and own the ability of driving a 2A load without additional transistor. It saves board space. The external

More information

AZV5002. Low Power Audio Jack Detector with SEND/END Detection in Miniaturized Package. Description. Pin Assignments. Features NEW PRODUCT

AZV5002. Low Power Audio Jack Detector with SEND/END Detection in Miniaturized Package. Description. Pin Assignments. Features NEW PRODUCT Low Power Audio Jack Detector with SEND/END Detection in Miniaturized Package Description Pin Assignments The is a low power and cost effective headset detection IC with a comparator with internal hysteresis,

More information

Features. P-Channel Enhancement Mode MOSFET

Features. P-Channel Enhancement Mode MOSFET P-Channel Enhancement Mode MOSFET Features Pin Description -4V/-25, R DS(ON) = 4mΩ (typ.) @ V GS = -V R DS(ON) = 55mΩ (typ.) @ V GS = -5V Super High Dense Cell Design G D S Reliable and Rugged Lead Free

More information

N-Channel 60-V (D-S), 175 C MOSFET

N-Channel 60-V (D-S), 175 C MOSFET N-Channel 6-V (D-S), 75 C MOSFET SUP/SUB7N6-4 V (BR)DSS (V) r DS(on) ( ) (A) 6.4 7 a TO-22AB D TO-263 DRAIN connected to TAB G G D S Top View SUP7N6-4 G D S Top View SUB7N6-4 S N-Channel MOSFET Parameter

More information

N-Channel 20-V (D-S) 175 C MOSFET

N-Channel 20-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUD7N-4P PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.37 @ V GS = V 37.6 @ V GS = 4.5 V 9 TO-5 D FEATURES TrenchFET Power MOSFET 75 C Junction Temperature PWM Optimized for

More information

P-Channel 60 V (D-S) MOSFET

P-Channel 60 V (D-S) MOSFET TP6K P-Channel 6 V (D-S) MOSFET G S PRODUCT SUMMARY V DS (V) R DS(on) ( ) V GS(th) (V) I D (ma) - 6 6 at V GS = - V - to - - 85 TO-6 (SOT-) Top View D Marking Code: 6Kwll 6K = Part Number Code for TP6K

More information

STN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description

STN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET Features Type V DSS (@Tjmax) Exceptional dv/dt capability Avalanche rugged technology 100% avalanche tested R DS(on) max STN3NF06L 60 V < 0.1

More information

N-Channel 40-V (D-S) 175 C MOSFET

N-Channel 40-V (D-S) 175 C MOSFET N-Channel 4-V (D-S) 75 C MOSFET SUP/SUB85N4-4 PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A) 4.4 @ V GS = V 85 a TO-22AB D TO-263 G DRAIN connected to TAB G D S Top View Ordering Information SUP85N4-4

More information

Features. T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units. (Note 1b) 0.46

Features. T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units. (Note 1b) 0.46 N-Channel.8 Vgs Specified PowerTrench MOSFET October 2 General Description This 2V N-Channel MOSFET uses Fairchild s high voltage PowerTrench process. It has been optimized for power management applications.

More information

MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G. JFET Switching Transistors. N Channel

MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G. JFET Switching Transistors. N Channel LT1G, SLT1G, LT1G, LT1G JFET Switching Transistors NChannel Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable

More information

P-Channel 1.25-W, 1.8-V (G-S) MOSFET

P-Channel 1.25-W, 1.8-V (G-S) MOSFET Si5DS P-Channel.5-W,.-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = -.5 V ±.5 -.7 at V GS = -.5 V ±. at V GS = -. V ± FEATURES Halogen-free According to IEC 9-- Available TrenchFET

More information

MICROPOWER, GENERAL-SENSITIVE HALL EFFECT SWITCH

MICROPOWER, GENERAL-SENSITIVE HALL EFFECT SWITCH Description The micro power Omni-polar Effect switch IC designed for portable and battery powered equipment such as cellular phones, PDA s and portable PC s. Based on two sensitive Effect plates and chopper

More information

A I DM. -55 to + 175 T STG. Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw

A I DM. -55 to + 175 T STG. Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw IGITL UIO MOSFET P 9673 IRFB565PbF Features Key Parameters Optimized for Class udio mplifier pplications Low R SON for Improved Efficiency Low Q G and Q SW for Better TH and Improved Efficiency Low Q RR

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) l l l l l dvanced Process Technology ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced

More information

FDD4243 40V P-Channel PowerTrench MOSFET -40V, -14A, 44mΩ Features

FDD4243 40V P-Channel PowerTrench MOSFET -40V, -14A, 44mΩ Features FDD443 4V P-Channel PowerTrench MOSFET -4V, -4A, 44mΩ Features Max r DS(on) = 44mΩ at V GS = -V, I D = -6.7A Max r DS(on) = 64mΩ at V GS = -4.5V, I D = -5.5A High performance trench technology for extremely

More information

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

WFU4N65S Product Description

WFU4N65S Product Description 65V SuperJunction Power MOSFET Features Ultra low Rdson Ultra low gate charge (typ. Qg =3nC) % UIS tested RoHS compliant G General escription Power MOSFET is fabricated using advanced super junction technology.

More information

AUIRLR2905 AUIRLU2905

AUIRLR2905 AUIRLU2905 Features dvanced Planar Technology Logic Level Gate Drive Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free,

More information

STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06 60V

More information

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated

More information

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching

More information

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 5.0 V 0.077 Q g (Max.) (nc) 64 Q gs (nc) 9.4 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel

More information

SSM3K335R SSM3K335R. 1. Applications. 2. Features. 3. Packaging and Pin Configuration. 2012-07-19 Rev.3.0. Silicon N-Channel MOS (U-MOS -H)

SSM3K335R SSM3K335R. 1. Applications. 2. Features. 3. Packaging and Pin Configuration. 2012-07-19 Rev.3.0. Silicon N-Channel MOS (U-MOS -H) MOSFETs Silicon N-Channel MOS (U-MOS-H) SSM3K335R SSM3K335R 1. Applications Power Management Switches DC-DC Converters 2. Features (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance : R DS(ON)

More information

STP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

STP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06FP 60V

More information

Automotive P-Channel 60 V (D-S) 175 C MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET Automotive P-Channel 6 V (D-S) 75 C MOSFET SQ36AEES PRODUCT SUMMARY V DS (V) -6 R DS(on) () at V GS = - V 7 R DS(on) () at V GS = -4.5 V.3 I D (A) -.9 Configuration Single D 3 SOT-3 (TO-36) G Top View

More information

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION TO-263 TO-25 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast

More information

TPN4R712MD TPN4R712MD. 1. Applications. 2. Features. 3. Packaging and Internal Circuit. 2014-12 2015-04-21 Rev.4.0. Silicon P-Channel MOS (U-MOS )

TPN4R712MD TPN4R712MD. 1. Applications. 2. Features. 3. Packaging and Internal Circuit. 2014-12 2015-04-21 Rev.4.0. Silicon P-Channel MOS (U-MOS ) MOSFETs Silicon P-Channel MOS (U-MOS) TPN4R712MD TPN4R712MD 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) Low drain-source on-resistance: R DS(ON) = 3.8 mω (typ.)

More information

AP1510. General Description. Features. Applications. Typical Application Circuit PWM CONTROL 3A STEP-DOWN CONVERTER AP1510. x (1+R A = V FB /R B

AP1510. General Description. Features. Applications. Typical Application Circuit PWM CONTROL 3A STEP-DOWN CONVERTER AP1510. x (1+R A = V FB /R B Features General Description Input voltage: 3.6 to 23 Output voltage: 0.8 to CC. Duty ratio: 0% to 100% PWM control Oscillation frequency: 300kHz typ. Current Limit, Enable function Thermal Shutdown function

More information

STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET

STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STB80NF55-08/-1 STP80NF55-08 55 V 55 V

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced

More information

AP8801. 500mA LED STEP-DOWN CONVERTER. Description. Pin Assignments. Features. Applications. Typical Application Circuit. (Top View) SET CTRL SW SW

AP8801. 500mA LED STEP-DOWN CONVERTER. Description. Pin Assignments. Features. Applications. Typical Application Circuit. (Top View) SET CTRL SW SW Description The is a step-down DC/DC converter designed to drive LEDs with a constant current. The device can drive up to thirteen LEDs, depending on the forward voltage of the LEDs, in series from a voltage

More information

AP1506. 150KHz, 3A PWM BUCK DC/DC CONVERTER. Pin Assignments. Description. Features. Applications. ( Top View ) 5 SD 4 FB 3 Gnd 2 Output 1 V IN

AP1506. 150KHz, 3A PWM BUCK DC/DC CONVERTER. Pin Assignments. Description. Features. Applications. ( Top View ) 5 SD 4 FB 3 Gnd 2 Output 1 V IN Description Pin Assignments The series are monolithic IC designed for a stepdown DC/DC converter, and own the ability of driving a 3A load without external transistor. Due to reducing the number of external

More information

OptiMOS 3 Power-Transistor

OptiMOS 3 Power-Transistor Type IPD6N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS

More information

AP8802 1A LED STEP-DOWN CONVERTER. Description. Pin Assignments. Features. Applications. Typical Application Circuit. (Top View) (Top View)

AP8802 1A LED STEP-DOWN CONVERTER. Description. Pin Assignments. Features. Applications. Typical Application Circuit. (Top View) (Top View) Description Pin Assignments The is a step-down DC/DC converter designed to drive LEDs with a constant current. The device can drive up to thirteen LEDs, depending on the forward voltage of the LEDs, in

More information

N-Channel 80-V (D-S) MOSFET

N-Channel 80-V (D-S) MOSFET Si785P N-Channel 80-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) 80 8 7 6 0.065 at V GS = 0 V.5 0.0 at V GS = 6 V 0.9 PowerPAK SO-8 5 S 6.5 mm 5.5 mm Ordering Information: Bottom View S S 3 G

More information

Features. Applications

Features. Applications Pb Lead-Free 1A LOW DROPOUT LINEAR REGULATOR Description The is a series of low dropout three-terminal regulators with a dropout of 1.15V at 1A output current. The series provides current limiting and

More information

STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET

STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

More information

STP16NF06L STP16NF06LFP

STP16NF06L STP16NF06LFP STP16NF06L STP16NF06LFP N-CHNNEL 60V - 0.07 Ω - 16 TO-220/TO-220FP STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP16NF06L STP60NF06LFP 60 V 60 V

More information

IRF5305PbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.06Ω I D = -31A

IRF5305PbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.06Ω I D = -31A dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize

More information

TO-220AB contribute to its wide acceptance throughout the industry.

TO-220AB contribute to its wide acceptance throughout the industry. l LogicLevel Gate rive l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier

More information

N-channel enhancement mode TrenchMOS transistor

N-channel enhancement mode TrenchMOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = V Low on-state resistance Fast switching I D = A High thermal cycling performance Low thermal resistance R DS(ON) mω (V GS = V) g s R DS(ON)

More information

STP55NF06L STB55NF06L - STB55NF06L-1

STP55NF06L STB55NF06L - STB55NF06L-1 General features STP55NF06L STB55NF06L - STB55NF06L-1 N-channel 60V - 0.014Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II Power MOSFET Type V DSS R DS(on) I D STP55NF06L 60V

More information

Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640

Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640 Power MOSFET PRODUCT SUMMARY V DS (V) 200 R DS(on) (Ω) = 10 V 0.50 Q g (Max.) (nc) 44 Q gs (nc) 7.1 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D

More information

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

OptiMOS 3 Power-Transistor

OptiMOS 3 Power-Transistor Type IPD36N4L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS

More information

IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET

IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE V DSS R DS(on) I D IRF740 400 V < 0.55 Ω 10 A TYPICAL R DS (on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY

More information

FDS6679AZ P-Channel PowerTrench MOSFET -30V, -13A, 9mΩ General Description

FDS6679AZ P-Channel PowerTrench MOSFET -30V, -13A, 9mΩ General Description FS6679AZ P-Channel PowerTrench MOSFET -3V, -3A, 9mΩ General escription This P-Channel MOSFET is producted using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored

More information

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.077 Q g (Max.) (nc) 72 Q gs (nc) 11 Q gd (nc) 32 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET

More information

OptiMOS Power-Transistor Product Summary

OptiMOS Power-Transistor Product Summary OptiMOS Power-Transistor Product Summary V DS 55 V R DS(on),max 4) 35 mω Features Dual N-channel Logic Level - Enhancement mode AEC Q11 qualified I D 2 A PG-TDSON-8-4 MSL1 up to 26 C peak reflow 175 C

More information

IRF7303 PD - 9.1239D. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.050Ω SO-8. Absolute Maximum Ratings. Thermal Resistance Ratings.

IRF7303 PD - 9.1239D. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.050Ω SO-8. Absolute Maximum Ratings. Thermal Resistance Ratings. l Generation V Technology l Ultra Low On-Resistance l ual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching escription Fifth Generation HEXFETs from International

More information

N-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted

N-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted October 5 BSS38 BSS38 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild s proprietary,

More information

STP10NK80ZFP STP10NK80Z - STW10NK80Z

STP10NK80ZFP STP10NK80Z - STW10NK80Z STP10NK80ZFP STP10NK80Z - STW10NK80Z N-channel 800V - 0.78Ω - 9A - TO-220/FP-TO-247 Zener-protected supermesh TM MOSFET General features Type V DSS R DS(on) I D Pw STP10NK80Z 800V

More information

Features. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N8F6 110N8F6 TO-220 Tube

Features. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N8F6 110N8F6 TO-220 Tube N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max I D P TOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W TO-220

More information

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET

More information

STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP

STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V - 1.76 Ω - 4 A SuperMESH Power MOSFET DPAK - D 2 PAK - IPAK - I 2 PAK - TO-220 - TO-220FP Features Type V DSS R DS(on)

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced

More information

IRFB3607PbF IRFS3607PbF IRFSL3607PbF

IRFB3607PbF IRFS3607PbF IRFSL3607PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) l dvanced Process Technology l Surface Mount (IRF4905S) l Lowprofile throughhole (IRF4905L) l 175 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated escription Fifth Generation

More information

Surface Mount Schottky Barrier

Surface Mount Schottky Barrier FEATURES - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level, per J-STD-020 - Compliant to RoHS Directive

More information

Features. TA=25 o C unless otherwise noted

Features. TA=25 o C unless otherwise noted NDSAN N-Channel, Logic Level, PowerTrench MOSFET June NDSAN General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been

More information

Power MOSFET FEATURES. IRFSL11N50APbF SiHFSL11N50A-E3. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 30

Power MOSFET FEATURES. IRFSL11N50APbF SiHFSL11N50A-E3. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 30 Power MOFET IRFL11N50, ihfl11n50 PRODUCT UMMRY V D (V) 500 R D(on) ( ) V G = 10 V 0.55 Q g (Max.) (nc) 51 Q gs (nc) 12 Q gd (nc) 23 Configuration ingle I 2 PK (TO262) G D FETURE Dynamic dv/dt Rating Repetitive

More information

IRLR8729PbF IRLU8729PbF

IRLR8729PbF IRLU8729PbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits

More information

Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20

Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 10 V 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel

More information

RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000

RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000 PD 97437A IRF93PbF HEXFET Power MOSFET V DS 30 V R DS(on) max (@V GS = V) I D (@T A = 25 C) 4. mω 20 A * SO8 Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits

More information

A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units

A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units V DS 2 V V GS Max ± 2 V R DSon) max @V GS = V) 24 m * PD - 9787A HEXFET Power MOSFET R DSon) max @V GS = 4.V) 4 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits

More information

Features. Symbol JEDEC TO-220AB

Features. Symbol JEDEC TO-220AB Data Sheet June 1999 File Number 2253.2 3A, 5V,.4 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching

More information

SIPMOS Small-Signal-Transistor

SIPMOS Small-Signal-Transistor SIPMOS Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS V R DS(on),max 3.5 Ω I DSS,min.4 A Available with V GS(th) indicator on reel Pb-free lead plating; RoHS

More information

HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω

HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω P - 93757 IRLML2502 HEXFET Power MOSFET Utra Low On-Resistance N-hanne MOSFET SOT-23 Footprint Low Profie (

More information

IRF6201PbF. HEXFET Power MOSFET V DS 20 V. R DS(on) max. 2.75 mω. Q g (typical) 130 nc 27 A. Absolute Maximum Ratings

IRF6201PbF. HEXFET Power MOSFET V DS 20 V. R DS(on) max. 2.75 mω. Q g (typical) 130 nc 27 A. Absolute Maximum Ratings PD - 97500A IRF620PbF V DS 20 V HEXFET Power MOSFET R DS(on) max (@ = 4.5V) 2.45 mω 6 R DS(on) max (@ = 2.5V) 2.75 mω 6 6 Q g (typical) 30 nc * SO-8 I D (@T A = 25 C) 27 A Applications OR-ing or hot-swap

More information

Final data. Maximum Ratings Parameter Symbol Value Unit

Final data. Maximum Ratings Parameter Symbol Value Unit SPPN8C3 SPN8C3 Cool MOS Power Transistor V DS 8 V Feature R DS(on).45 Ω New revolutionary high voltage technology Ultra low gate charge I D Periodic avalanche rated Extreme dv/dt rated Ultra low effective

More information

A I DM. W/ C V GS Gate-to-Source Voltage ± 12. Thermal Resistance Symbol Parameter Typ. Max. Units

A I DM. W/ C V GS Gate-to-Source Voltage ± 12. Thermal Resistance Symbol Parameter Typ. Max. Units V DS 2 V V GS Max ±2 V * PD - 973A HEXFET Power MOSFET R DSon) max @V GS = 4.V) 2. m R DSon) max @V GS = 2.V) 27. m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits

More information

N-Channel 60-V (D-S) MOSFET

N-Channel 60-V (D-S) MOSFET 7/7, VQJ/P, BS7 -Channel 6-V (D-S) MOSFET Part umber V (BR)DSS Min (V) r DS(on) Max ( ) V GS(th) (V) I D (A) 7 5 @ V GS = V.8 to. 7 7.5 @ V GS = V to.5.5 VQJ 6 5.5 @ V GS = V.8 to.5.5 VQP 5.5 @ V GS =

More information

IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET

IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free

More information

OptiMOS TM Power-Transistor

OptiMOS TM Power-Transistor Type BSC28N6NS OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target

More information

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) PD 9399A AUTOMOTIVE MOSFET Typical Applications Electric Power Steering (EPS) Antilock Braking System (ABS) Wiper Control Climate Control Power Door Benefits Advanced Process Technology Ultra Low OnResistance

More information

IRFP054N. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.012Ω I D = 81A

IRFP054N. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.012Ω I D = 81A l l l l l dvanced Process Technology ynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced

More information

V DSS R DS(on) max Qg. 30V 3.2mΩ 36nC

V DSS R DS(on) max Qg. 30V 3.2mΩ 36nC PD - 96232 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification

More information

30 V, single N-channel Trench MOSFET

30 V, single N-channel Trench MOSFET SOT883B Rev. 1 11 May 212 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN16B-3 (SOT883B) Surface-Mounted

More information

STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3

STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 N-channel 55 V, 6.5 mω, 80 A, DPAK, IPAK, D 2 PAK, I 2 PAK, TO-220 TO-220FP STripFET III Power MOSFET Features Type V DSS R DS(on)

More information