DMG4800LSD. Product Summary. Features and Benefits. Description. Mechanical Data. Applications. Ordering Information (Notes 4 & 5) Marking Information
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1 MG48LS UL N-CHNNEL ENHNCEMENT MOE MOSFET Product Summary V (BR)SS 3V escription R S(on) max I max T = +25 C V = 1V 9.8 V = 4.5V 8.4 This MOSFET has been designed to minimize the on-state resistance (R S(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. pplications Backlighting Power Management Functions C-C Converters Features and Benefits 1% avalanche rated part Low R S(on) - minimizes conduction losses Low Q g - minimizes switching losses Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and ntimony Free. Green evice (Note 3) Qualified to EC-Q11 standards for High Reliability PPP Capable (Note 4) Mechanical ata Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level 1 per J-ST-2 Terminal Connections Indicator: See iagram Terminals: Finish Matte Tin nnealed over Copper Leadframe. Solderable per MIL-ST-22, Method 28 e3 Weight:.76 grams (approximate) Top View SO G 1 G 2 Top View Pin Configuration Internal Schematic S 1 N-Channel MOSFET S 2 N-Channel MOSFET Ordering Information (Notes 4 & 5) Part Number Compliance Case Packaging MG48LS-13 Standard SO-8 2,5 / Tape & Reel MG48LSQ-13 utomotive SO-8 2,5 / Tape & Reel Notes: 1. No purposely added lead. Fully EU irective 22/95/EC (RoHS) & 211/65/EU (RoHS 2) compliant. 2. See for more information about iodes Incorporated s definitions of Halogen- and ntimony-free, "Green" and Lead-free. 3. Halogen- and ntimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<15ppm total Br + Cl) and <1ppm antimony compounds. 4. utomotive products are EC-Q11 qualified and are PPP capable. utomotive, EC-Q1x and standard products are electrically and thermally the same, except where specified. For more information, please refer to 5. For packaging details, go to our website at Marking Information 8 5 G48L YY WW 1 4 Chengdu /T Site 8 5 G48L YY WW 1 4 Shanghai /T Site = Manufacturer s Marking G48L = Product Type Marking Code YYWW = ate Code Marking YY or YY = Year (ex: 14 = 214) WW = Week (1-53) YY = ate Code Marking for ST (Shanghai ssembly/ Test site) YY = ate Code Marking for CT (Chengdu ssembly/ Test site) MG48LS 1 of 6 July 214
2 MG48LS Maximum Ratings = +25 C, unless otherwise specified.) Characteristic Symbol Value Units rain-source Voltage V SS 3 V Gate-Source Voltage V S ±25 V Continuous rain Current (Note 7) V = 1V Steady T = +25 C 7.5 I State T = +7 C 6. T t<1s = +25 C 9.8 I T = +7 C 7.7 Continuous rain Current (Note 7) V = 4.5V Steady T = +25 C 6.4 I State T = +7 C 5. T t<1s = +25 C 8.4 I T = +7 C 6.6 Maximum Continuous Body iode Forward Current (Note 7) I S 2 Pulsed rain Current (1µs pulse, duty cycle = 1%) I M 42 valanche Current (Notes 8 & 9) L =.1mH I R 17 Repetitive valanche Energy (Notes 8 & 9) L =.1mH E R 14 mj Thermal Characteristics Characteristic Symbol Value Units Total Power issipation (Note 6) P 1.17 W Thermal Resistance, Junction to mbient (Note 6) Steady State 17 R t<1s θj 61 C/W Total Power issipation (Note 7) P 1.5 W Thermal Resistance, Junction to mbient (Note 7) Steady State 83 R t<1s θj 49 C/W Thermal Resistance, Junction to Case R θjc 14.5 Operating and Storage Temperature Range T J, T STG -55 to 15 C Electrical Characteristics (@T = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHRCTERISTICS (Note 1) rain-source Breakdown Voltage BV SS 3 V V = V, I = 25μ Zero Gate Voltage rain Current T J = +25 C I SS 1. μ V S = 3V, V = V Gate-Source Leakage I S ±1 n V = ±2V, V S = V ON CHRCTERISTICS (Note 1) Gate Threshold Voltage V (th) V V S = V, I = 25μ Static rain-source On-Resistance R S(on) mω V = 1V, I = 9 V = 4.5V, I = 7 Forward Transfer dmittance Y fs 8 S V S = 1V, I = 9 iode Forward Voltage V S V V = V, I S = 1 YNMIC CHRCTERISTICS (Note 11) Input Capacitance C iss 798 pf V S = 1V, V = V, f = 1.MHz Output Capacitance C oss 128 pf Reverse Transfer Capacitance C rss 122 pf Gate Resistance R g 1.37 Ω V S = V, V = V, f = 1MHz Total Gate Charge Q g 8.56 nc Gate-Source Charge Q gs 1.8 nc Gate-rain Charge Q gd 2.5 nc Turn-On elay Time t (on) 5.3 ns Turn-On Rise Time t r 4.5 ns Turn-Off elay Time t (off) ns Turn-Off Fall Time t f 8.55 ns Notes: 6. evice mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. evice mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. I R and E R rating are based on low frequency and duty cycles to keep T J = +25 C. 9. pplicable to products manufactured with ata Code 1146 (Nov, 211) and newer. 1. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. V = 5V, V S = 15V, I = 9 V = 15V, V GEN = 1V, R L = 15Ω, R G = 6Ω, I = 1 MG48LS 2 of 6 July 214
3 MG48LS I, RIN CURRENT () V = 1V V = 4.5V V = 3.V V = 2.5V V = 2.V V S, RIN-SOURCE VOLTGE (V) Fig. 1 Typical Output Characteristic I, RIN CURRENT () V = 5V S T = 15 C T = 125 C T = 85 C T = 25 C T = -55 C V, GTE-SOURCE VOLTGE (V) Fig. 2 Typical Transfer Characteristic R S(ON), RIN-SOURCE ON-RESISTNCE ( ) 1.1 V = 2.5V V = 4.5V I, RIN-SOURCE CURRENT () Fig. 3 Typical On-Resistance vs. rain Current and Gate Voltage R S(ON), RIN-SOURCE ON-RESISTNCE ( ) V = 4.5V T = 15 C T = 125 C T = 85 C T = 25 C T = -55 C I, RIN CURRENT () Fig. 4 Typical On-Resistance vs. rain Current and Temperature R SON, RIN-SOURCE ON-RESISTNCE (NORMLIZE) V = 4.5V I = 1 V = 1V I = T, MBIENT TEMPERTURE ( C) Fig. 5 On-Resistance Variation with Temperature R SON, RIN-SOURCE ON-RESISTNCE ( ) V = 4.5V I = 1 V = 1V I = T, MBIENT TEMPERTURE ( C) Fig. 6 On-Resistance Variation with Temperature MG48LS 3 of 6 July 214
4 MG48LS V (TH), GTE THRESHOL VOLTGE (V) I = 25µ I = 1m T, MBIENT TEMPERTURE ( C) Fig. 7 Gate Threshold Variation vs. mbient Temperature I, SOURCE CURRENT () S T = 25 C V S, SOURCE-RIN VOLTGE (V) Fig. 8 iode Forward Voltage vs. Current 1, 1 C, CPCITNCE (pf) 1, 1 C iss C oss C rss V, GTE-SOURCE VOLTGE (V) I = V S, RIN-SOURCE VOLTGE (V) Fig. 9 Typical Total Capacitance Q G, TOTL GTE CHRGE (nc) Fig. 1 Total Gate Charge 1, I SS, LEKGE CURRENT (n) 1, 1, 1 1 T = -55 C T = 15 C T = 125 C T = 85 C T = 25 C V S, RIN-SOURCE VOLTGE (V) Fig. 11 Typical Leakage Current vs. rain-source Voltage MG48LS 4 of 6 July 214
5 MG48LS r(t), TRNSIENT THERML RESISTNCE =.7 =.5 =.3 =.1 =.5 =.2 =.1 =.9 R J(t) = r(t) * R J R J = 16 C/W =.5 t 2 T J - T = P * R J(t) uty Cycle, = t 1/t2 = Single Pulse , t 1, PULSE URTION TIME (s) Fig. 12 Transient Thermal Response P(pk) t 1 Package Outline imensions Please see P21 at for the latest version. e b E1 2 E 3 1 h etail 45 L ~9 Gauge Plane Seating Plane etail SO-8 im Min Max b E E e 1.27 Typ h -.35 L ll imensions in mm Suggested Pad Layout Please see P21 at for the latest version. X C2 C1 imensions Value (in mm) X.6 Y 1.55 C1 5.4 C Y MG48LS 5 of 6 July 214
6 MG48LS IMPORTNT NOTICE IOES INCORPORTE MKES NO WRRNTY OF NY KIN, EXPRESS OR IMPLIE, WITH REGRS TO THIS OCUMENT, INCLUING, BUT NOT LIMITE TO, THE IMPLIE WRRNTIES OF MERCHNTBILITY N FITNESS FOR PRTICULR PURPOSE (N THEIR EQUIVLENTS UNER THE LWS OF NY JURISICTION). iodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. iodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does iodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. ny Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold iodes Incorporated and all the companies whose products are represented on iodes Incorporated website, harmless against all damages. iodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use iodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold iodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by iodes Incorporated. LIFE SUPPORT iodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of iodes Incorporated. s used herein:. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of iodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by iodes Incorporated. Further, Customers must fully indemnify iodes Incorporated and its representatives against any damages arising out of the use of iodes Incorporated products in such safety-critical, life support devices or systems. Copyright 214, iodes Incorporated MG48LS 6 of 6 July 214
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dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced
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