FDS6679AZ P-Channel PowerTrench MOSFET -30V, -13A, 9mΩ General Description

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1 FS6679AZ P-Channel PowerTrench MOSFET -3V, -3A, 9mΩ General escription This P-Channel MOSFET is producted using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features July 8 Max r S(on) = 9.3mΩ at V GS = -V, I = -3A Max r S(on) =.8mΩ at V GS = -.5V, I = -A Extended V GS range (-5V) for battery applications HBM ES protection level of 6kV typical (note 3) tm High performance trench technology for extremely low r S(on) High power and current handing capability RoHS Compliant SO-8 S G S S 7 8 MOSFET Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter Ratings Units V S rain to Source Voltage -3 V V GS Gate to Source Voltage ±5 V rain Current -Continuous (Note a) -3 I -Pulsed -65 A P (Note b). W Power issipation for Single Operation (Note a).5 (Note c). T J, T STG Operating and Storage Temperature -55 to +5 C Thermal Characteristics R θja Thermal Resistance, Junction to Ambient (Note a) 5 C/W R θjc Thermal Resistance, Junction to Case (Note ) 5 C/W Package Marking and Ordering Information evice Marking evice Reel Size Tape Width Quantity FS6679AZ FS6679AZ 3 mm 5 units 8 Fairchild Semiconductor Corporation FS6679AZ Rev. B

2 Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B VSS rain to Source Breakdown Voltage I = -5µA, V GS = V -3 V B VSS Breakdown Voltage Temperature I = -5µA, referenced to - mv/ C T J Coefficient 5 C I SS Zero Gate Voltage rain Current V S = -V, V GS =V - µa I GSS Gate to Source Leakage Current V GS = ±5V, V S =V ± µa On Characteristics (Note ) V GS(th) Gate to Source Threshold Voltage V GS = V S, I = -5µA V V GS(th) T J r S(on) Gate to Source Threshold Voltage Temperature Coefficient rain to Source On Resistance I = -5µA, referenced to 5 C 6.5 mv/ C V GS = -V, I = -3A V GS = -.5V, I = -A.8.8 V GS = -V, I = -3A, T J = 5 C.7 3. g FS Forward Transconductance V S = -5V, I = -3A 55 S ynamic Characteristics C iss Input Capacitance pf V S = -5V, V GS = V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance pf Switching Characteristics (Note ) t d(on) Turn-On elay Time 3 ns t V = -5V, I = -A r Rise Time 5 7 ns V GS = -V, R GS = 6Ω t d(off) Turn-Off elay Time 336 ns t f Fall Time 9 8 ns Q g Total Gate Charge V S = -5V, V GS = -V, I = -3A mω nc Q g Total Gate Charge 38 5 nc V S = -5V, V GS = -5V, Q gs Gate to Source Gate Charge nc I = -3A Q gd Gate to rain Charge 7 nc rain-source iode Characteristic V S Source to rain iode Forward Voltage V GS = V, I S = -.A V t rr Reverse Recovery Time I F = -3A, di/dt = A/µs ns Q rr Reverse Recovery Charge I F = -3A, di/dt = A/µs -3 nc Notes: : R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user s board design. a) 5 C/W when mounted on a in pad of oz copper b)5 C/W when c) 5 C/W when mounted on a. in mounted on a pad of oz copper minimun pad Scale : on letter size paper : Pulse Test:Pulse Width <3µs, uty Cycle <.% 3: The diode connected between the gate and source serves only as protection against ES. No gate overvoltage rating is implied. FS6679AZ Rev. B

3 Typical Characteristics T J = 5 C unless otherwise noted -I, RAIN CURRENT (A) NORMALIZE RAIN TO SOURCE ON-RESISTANCE V GS = - V PULSE URATION = 8µs UTY CYCLE =.5%MAX V GS = - 5V V GS = -.5V V GS = - V V GS = - 3.5V 3 -V S, RAIN TO SOURCE VOLTAGE (V) Figure. On Region Characteristics I = -3A V GS = -V V GS = - 3V T J, JUNCTION TEMPERATURE ( o C) NORMALIZE RAIN TO SOURCE ON-RESISTANCE r S(on), RAIN TO SOURCE V GS = - 3.5V PULSE URATION = 8µs UTY CYCLE =.5%MAX V GS = - V.5 V GS = - 5V. V GS = - V I, RAIN CURRENT(A) V GS = -.5V Figure. Normalized On-Resistance vs rain Current and Gate Voltage ON-RESISTANCE (mω) 3 I = -3A PULSE URATION = 8µs UTY CYCLE =.5%MAX T J = 5 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure. On-Resistance vs Gate to Source Voltage -I, RAIN CURRENT (A) PULSE URATION = 8µs UTY CYCLE =.5%MAX T J = 5 o C T J = -55 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics -IS, REVERSE RAIN CURRENT (A).. V GS = V T J = 5 o C T J = -55 o C E V S, BOY IOE FORWAR VOLTAGE (V) Figure 6. Source to rain iode Forward Voltage vs Source Current FS6679AZ Rev. B 3

4 Typical Characteristics T J = 5 C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) -Ig(uA) Q g, GATE CHARGE(nC) E-3 Figure 7... V = -V V = -V V = -5V CAPACITANCE (pf) f = MHz V GS = V. -V S, RAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to Source Voltage T J = 5 o C -IAS, AVALANCHE CURRENT(A) C rss C oss C iss 3 E V GS (V) - - t AV, TIME IN AVALANCHE(ms) Figure 9. I g vs V GS Figure. Unclamped Inductive Switching Capability 6 -I, RAIN CURRENT (A) 8 6 V GS = -.5V V GS = -V T A, AMBIENT TEMPERATURE ( o C) -I, RAIN CURRENT (A) ms ms THIS AREA IS LIMITE BY r S(on) ms. SINGLE PULSE s T J = MAX RATE s R θja = 5 o C/W C T A = 5 o C... -V S, RAIN to SOURCE VOLTAGE (V) Figure. Maximum Continuous rain Current vs Ambient Temperature Figure. Forward Bias Safe Operating Area FS6679AZ Rev. B

5 Typical Characteristics T J = 5 C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) NORMALIZE THERMAL IMPEANCE, Z θja 3 SINGLE PULSE R θja = 5 o C/W T A = 5 o C t, PULSE WITH (sec). Figure 3. UTY CYCLE-ESCENING ORER = Junction-to-Case Transient Thermal Response Curve V GS = - V. SINGLE PULSE t t R θja = 5 o C/W NOTES: UTY FACTOR: = t /t PEAK T J = P M x Z θja x R θja + T A E t, RECTANGULAR PULSE URATION (sec) P M Figure. Junction-to-Ambient Transient Thermal Response Curve FS6679AZ Rev. B 5

6 tm tm tm TRAEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EcoSPARK EfficentMax EZSWITCH * Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak Millerrive MotionMax Motion-SPM OPTOLOGIC OPTOPLANAR PP SPM Power-SPM PowerTrench Programmable Active roop QFET QS Quiet Series RapidConfigure Saving our world, mw at a time SmartMax SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SuperMOS SyncFET * EZSWITCH and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor. The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire UHC Ultra FRFET UniFET VCX VisualMax ISCLAIMER FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR ESIGN. FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS O NOT EXPAN THE TERMS OF FAIRCHIL S WORLWIE TERMS AN CONITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PROUCTS. LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHIL SEMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Farichild s Anti-Counterfeiting Policy is also stated on our external website,, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild istributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild istributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Farichild s full range of up-to-date technical and product information. Fairchild and our Authorized istributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PROUCT STATUS EFINITIONS efinition of Terms atasheet Identification Product Status efinition Advance Information Formative / In esign atasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed Obsolete FS6679AZ Rev. B First Production Full Production Not In Production atasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. atasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. atasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. 6 Rev. I35

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