FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

Transcription

1 FQP8N80C/FQPF8N80C/FQPF8N80CYTU 800V N-Channel MOFET General escription These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, MO technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. G TO-220 FQP eries G Features Absolute Maximum Ratings T C = 25 C unless otherwise noted 8A, 800V, R (on) = G = 10 V Low gate charge ( typical 35 nc) Low Crss ( typical 13 pf) Fast switching 100% avalanche tested Improved dv/dt capability RoH Compliant TO-220F FQPF eries ymbol Parameter FQP8N80C FQPF8N80C Units rain-ource Voltage 800 V I rain Current - Continuous (T C = 25 C) 8 8 * A - Continuous (T C = 100 C) * A I M rain Current - Pulsed (Note 1) * A V G Gate-ource Voltage ± 30 V E A ingle Pulsed Avalanche Energy (Note 2) 850 mj I AR Avalanche Current (Note 1) 8 A E AR Repetitive Avalanche Energy (Note 1) 17.8 mj dv/dt Peak iode Recovery dv/dt (Note 3) 4.5 V/ns P Power issipation (T C = 25 C) W - erate above 25 C W/ C T J, T TG Operating and torage Temperature Range -55 to +150 C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 C * rain current limited by maximum junction temperature. G! January 2009 QFET TM!! Thermal Characteristics ymbol Parameter FQP8N80C FQPF8N80C Units R θjc Thermal Resistance, Junction-to-Case C/W R θj Thermal Resistance, Case-to-ink Typ C/W R θja Thermal Resistance, Junction-to-Ambient C/W 2009 Fairchild emiconductor Corporation FQP8N80C/FQPF8N80C/FQPF8N80CYTU Rev.A 1

2 Electrical Characteristics T C = 25 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics B rain-ource Breakdown Voltage V G = 0 V, I = 250 µa V B Breakdown Voltage Temperature / T J Coefficient I = 250 µa, Referenced to 25 C V/ C I = 800 V, V G = 0 V µa Zero Gate Voltage rain Current = 640 V, T C = 125 C µa I GF Gate-Body Leakage Current, Forward V G = 30 V, = 0 V na I GR Gate-Body Leakage Current, Reverse V G = -30 V, = 0 V na On Characteristics V G(th) Gate Threshold Voltage = V G, I = 250 µa V R (on) tatic rain-ource V On-Resistance G = 10 V, I = 4 A Ω g F Forward Transconductance = 50 V, I = 4 A (Note 4) ynamic Characteristics C iss Input Capacitance = 25 V, V G = 0 V, pf C oss Output Capacitance f = 1.0 MHz pf C rss Reverse Transfer Capacitance pf witching Characteristics t d(on) Turn-On elay Time ns = 400 V, I = 8 A, t r Turn-On Rise Time R G = 25 Ω ns t d(off) Turn-Off elay Time ns t f Turn-Off Fall Time (Note 4, 5) ns Q g Total Gate Charge = 640 V, I = 8 A, nc Q gs Gate-ource Charge V G = 10 V nc Q gd Gate-rain Charge (Note 4, 5) nc rain-ource iode Characteristics and Maximum Ratings I Maximum Continuous rain-ource iode Forward Current A I M Maximum Pulsed rain-ource iode Forward Current A V rain-ource iode Forward Voltage V G = 0 V, I = 8 A V t rr Reverse Recovery Time V G = 0 V, I = 8 A, ns Q rr Reverse Recovery Charge di F / dt = 100 A/µs (Note 4) µc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 25mH, I A = 8A, = 50V, R G = 25 Ω, tarting T J = 25 C 3. I 8A, di/dt 200A/µs, B, tarting T J = 25 C 4. Pulse Test : Pulse width 300µs, uty cycle 2% 5. Essentially independent of operating temperature FQP8N80C/FQPF8N80C/FQPF8N80CYTU Rev.A 2

3 Typical Characteristics I, rain Current [A] R (ON) [Ω ], rain-ource On-Resistance Capacitance [pf] , rain-ource Voltage [V] V G Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V V G = 20V V G = 10V Note : T J = I, rain Current [A] μ s Pulse Test 2. T C = 25 Figure 1. On-Region Characteristics Figure 3. On-Resistance Variation vs rain Current and Gate Voltage C iss C oss C rss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 1. V G = 0 V 2. f = 1 MHz I, rain Current [A] I R, Reverse rain Current [A] = 50V μ s Pulse Test V G, Gate-ource Voltage [V] V G, Gate-ource Voltage [V] o C 25 o C -55 o C Figure 2. Transfer Characteristics V G = 0V μ s Pulse Test V, ource-rain voltage [V] Figure 4. Body iode Forward Voltage Variation with ource Current and Temperature = 160V = 400V = 640V , rain-ource Voltage [V] Q G, Total Gate Charge [nc] Note : I = 8A Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics FQP8N80C/FQPF8N80C/FQPF8N80CYTU Rev.A 3

4 Typical Characteristics (Continued) B, (Normalized) rain-ource Breakdown Voltage I, rain Current [A] T J, Junction Temperature [ o C] 1. V G = 0 V 2. I = 250 μ A Figure 7. Breakdown Voltage Variation vs Temperature 10 2 Operation in This Area is Limited by R (on) 10 µs 1. T C = 25 o C 2. T J = 150 o C 3. ingle Pulse , rain-ource Voltage [V] Figure 9-1. Maximum afe Operating Area for FQP8N80C C 10 ms 1 ms 100 µs R (ON), (Normalized) rain-ource On-Resistance I, rain Current [A] V G = 10 V 2. I = 4.0 A T J, Junction Temperature [ o C] Figure 8. On-Resistance Variation vs Temperature 10 2 Operation in This Area is Limited by R (on) 10 µs 1. T C = 25 o C 2. T J = 150 o C 3. ingle Pulse , rain-ource Voltage [V] Figure 9-2. Maximum afe Operating Area for FQPF8N80C C 100 µs 1 ms 10 ms 10 8 I, rain Current [A] T C, Case Temperature [ ] Figure 10. Maximum rain Current vs Case Temperature FQP8N80C/FQPF8N80C/FQPF8N80CYTU Rev.A 4

5 Typical Characteristics (Continued) Z θ JC (t), Thermal Response Z θ JC (t), Therm al Response Figure Transient Thermal Response Curve for FQP8N80C 10-2 = = single pulse t 1, quare Wave Pulse uration [sec] single pulse 1. Z θ JC (t) = 0.7 /W M ax. 2. uty Factor, =t 1 /t 2 3. T JM - T C = P M * Z θ JC (t) 1. Z θ JC (t) = 2.1 /W M ax. 2. uty Factor, =t 1 /t 2 3. T JM - T C = P M * Z θ JC (t) t 1, quare Wave Pulse uration [sec] Figure Transient Thermal Response Curve for FQPF8N80C FQP8N80C/FQPF8N80C/FQPF8N80CYTU Rev.A 5

6 Gate Charge Test Circuit & Waveform Resistive witching Test Circuit & Waveforms Unclamped Inductive witching Test Circuit & Waveforms FQP8N80C/FQPF8N80C/FQPF8N80CYTU Rev. A 5

7 V G ( riv e r ) I ( U T ) Peak iode Recovery dv/dt Test Circuit & Waveforms U T + I _ L r iv e r R G a m e T y p e a s U T V G d v / d t c o n t r o lle d b y R G I c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id t h = G a t e P u ls e P e r io d I F M, B o d y io d e F o r w a r d C u r r e n t d i/ d t I R M 1 0 V B o d y io d e R e v e r s e C u r r e n t ( U T ) B o d y io d e R e c o v e r y d v / d t V B o d y io d e F o r w a r d V o lt a g e r o p FQP8N80C/FQPF8N80C/FQPF8N80CYTU Rev. A 6

8 Peak iode Recovery dv/dt Test Circuit & Waveforms U T + I _ L r iv e r R G a m e T y p e a s U T V G d v / d t c o n t r o lle d b y R G I c o n t r o lle d b y p u ls e p e r io d FB037N06 N-Channel PowerTrench MOFET V G ( riv e r ) G a t e P u ls e W id t h = G a t e P u ls e P e r io d 1 0 V I F M, B o d y io d e F o r w a r d C u r r e n t I ( U T ) d i/ d t I R M B o d y io d e R e v e r s e C u r r e n t ( U T ) B o d y io d e R e c o v e r y d v / d t V B o d y io d e F o r w a r d V o lt a g e r o p FQP8N80C/FQPF8N80C/FQPF8N80CYTU Rev. A 7

9 Package imensions (1.70) 9.20 ± ± ±0.10 (1.46) (1.00) 1.27 ± TYP [2.54 ±0.20] 9.90 ±0.20 (8.70) ø3.60 ±0.10 (45 ) (3.70) (3.00) 1.52 ± ± ± ± TYP [2.54 ±0.20] TO ± MAX ± ±0.20 FQP8N80C/FQPF8N80CFQPF8N80CYTU 800V N-Channel MOFET ±0.20 imensions in Millimeters FQP8N80C/FQPF8N80C/FQPF8N80CYTU Rev.A 8

10 Package imensions (Continued) 3.30 ± ± ±0.30 MAX ± ± TYP [2.54 ±0.20] ±0.20 (7.00) (0.70) #1 TO-220F (30 ) 2.54TYP [2.54 ±0.20] ø3.18 ± ±0.20 (1.00x45 ) ± ± ± ± ±0.20 imensions in Millimeters FQP8N80C/FQPF8N80C/FQPF8N80CYTU Rev.A 9

11 FQF8N80C/FQPF8N80C/FQPF8N80CYTU 800V N-Channel MOFET FQP8N80C/FQPF8N80C/FQPF8N80CYTU Rev.A 10

12 tm tm tm TRAEMARK The following includes registered and unregistered trademarks and service marks, owned by Fairchild emiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it Now CorePLU CorePOWER CROVOLT CTL Current Transfer Logic EcoPARK EfficentMax EZWITCH * Fairchild Fairchild emiconductor FACT Quiet eries FACT FAT FastvCore FlashWriter * FP F-PF FRFET Global Power Resource M Green FP Green FP e-eries GTO IntelliMAX IOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak Millerrive MotionMax Motion-PM OPTOLOGIC OPTOPLANAR PP PM Power-PM PowerTrench PowerX * EZWITCH and FlashWriter are trademarks of ystem General Corporation, used under license by Fairchild emiconductor. ICLAIMER FAIRCHIL EMICONUCTOR REERVE THE RIGHT TO MAKE CHANGE WITHOUT FURTHER NOTICE TO ANY PROUCT HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR EIGN. FAIRCHIL OE NOT AUME ANY LIABILITY ARIING OUT OF THE APPLICATION OR UE OF ANY PROUCT OR CIRCUIT ECRIBE HEREIN; NEITHER OE IT CONVEY ANY LICENE UNER IT PATENT RIGHT, NOR THE RIGHT OF OTHER. THEE PECIFICATION O NOT EXPAN THE TERM OF FAIRCHIL WORLWIE TERM AN CONITION, PECIFICALLY THE WARRANTY THEREIN, WHICH COVER THEE PROUCT. LIFE UPPORT POLICY FAIRCHIL PROUCT ARE NOT AUTHORIZE FOR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM WITHOUT THE EXPRE WRITTEN APPROVAL OF FAIRCHIL EMICONUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. Programmable Active roop QFET Q Quiet eries RapidConfigure aving our world, 1mW /W /kw at a time martmax MART TART PM TEALTH uperfet uperot -3 uperot -6 uperot -8 upremo yncfet The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire μeres UHC Ultra FRFET UniFET VCX VisualMax X 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild emiconductor Corporation s Anti-Counterfeiting Policy. Farichild s Anti-Counterfeiting Policy is also stated on our external website,, under ales upport. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild istributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild istributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Farichild s full range of up-to-date technical and product information. Fairchild and our Authorized istributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized ources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PROUCT TATU EFINITION efinition of Terms atasheet Identification Product tatus efinition Advance Information Formative / In esign atasheet contains the design specifications for product development. pecifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production atasheet contains preliminary data; supplementary data will be published at a later date. Fairchild emiconductor reserves the right to make changes at any time without notice to improve design. atasheet contains final specifications. Fairchild emiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production atasheet contains specifications on a product that is discontinued by Fairchild emiconductor. The datasheet is for reference information only. Rev. I37 FQP8N80C/FQPF8N80C/FQPF8N80CYTU Rev. A 11