FGH40N60UFD 600 V, 40 A Field Stop IGBT

Transcription

1 FGH4N6UFD 6 V, 4 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) =.8 I C = 4 A High Input Impedance Fast Switching RoHS Compliant Applications Solar Inverter, UPS, Welder, PFC, Microwave Oven, Telecom, ESS E C G General Description November 23 Using novel field stop IGBT technology, Fairchild s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential. C G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description Ratings Unit V CES Collector to Emitter Voltage 6 V V GES Gate to Emitter Voltage 2 V I C Collector 8 A Collector T C = o C 4 A I CM () Pulsed Collector 2 A P D Maximum Power 29 W Maximum Power T C = o C 6 W T J Operating Junction Temperature -55 to +5 o C T stg Storage Temperature Range -55 to +5 o C T L Maximum Lead Temp. for soldering Purposes, /8 from case for 5 seconds 3 o C Notes: : Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit R JC (IGBT) Thermal Resistance, Junction to Case -.43 o C/W R JC (Diode) Thermal Resistance, Junction to Case -.45 o C/W R JA Thermal Resistance, Junction to Ambient - 4 o C/W 28 Fairchild Semiconductor Corporation

2 Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH4N6UFDTU FGH4N6UFD TO-247 Tube N/A N/A 3 Electrical Characteristics of the IGBT T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BV CES Collector to Emitter Breakdown Voltage V GE = V, I C = 25 A V BV CES T J Temperature Coefficient of Breakdown Voltage V GE = V, I C = 25 A V/ o C I CES Collector Cut-Off Current V CE = V CES, V GE = V A I GES G-E Leakage Current V GE = V GES, V CE = V - - ±4 na On Characteristics V GE(th) G-E Threshold Voltage I C = 25 A, V CE = V GE V V CE(sat) Collector to Emitter Saturation Voltage I C = 4 A, V GE = 5 V V I C = 4 A, V GE = 5 V, V Dynamic Characteristics C ies Input Capacitance pf C oes Output Capacitance V CE = 3 V, V GE = V, f = MHz pf C res Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns t r Rise Time ns t d(off) Turn-Off Delay Time V CC = 4 V, I C = 4 A, ns t f Fall Time R G =, V GE = 5 V, ns E on Turn-On Switching Loss Inductive Load, mj E off Turn-Off Switching Loss mj E ts Total Switching Loss mj t d(on) Turn-On Delay Time ns t r Rise Time ns t d(off) Turn-Off Delay Time V CC = 4 V, I C = 4 A, ns t f Fall Time R G =, V GE = 5 V, ns E on Turn-On Switching Loss Inductive Load, mj E off Turn-Off Switching Loss mj E ts Total Switching Loss mj Q g Total Gate Charge nc Q ge Gate to Emitter Charge V CE = 4 V, I C = 4 A, V GE = 5 V nc Q gc Gate to Collector Charge nc 28 Fairchild Semiconductor Corporation 2

3 Electrical Characteristics of the Diode T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max Unit V FM Diode Forward Voltage I F = 2 A V t rr Diode Reverse Recovery Time ns I F =2 A, di F /dt = 2 A/ s Q rr Diode Reverse Recovery Charge nc Fairchild Semiconductor Corporation 3

4 Typical Performance Characteristics Figure. Typical Output Characteristics Collector Current, IC [A] V 5V 2V V V GE = 8V Figure 3. Typical Saturation Voltage Characteristics Collector Current, IC [A] V GE = 5V Figure 2. Typical Output Characteristics Collector Current, IC [A] Collector Current, I C [A] V 5V 2V V V GE = 8V Figure 4. Transfer Characteristics V CE = 2V Gate-Emitter Voltage,V GE [V] Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] V GE = 5V 8A 4A I C = 2A Case Temperature, T C [ o C] Figure 6. Saturation Voltage vs. V GE Collector-Emitter Voltage, VCE [V] I C = 2A 4A 8A T C = - 4 o C Gate-Emitter Voltage, V GE [V] 28 Fairchild Semiconductor Corporation 4

5 Typical Performance Characteristics Figure 7. Saturation Voltage vs. V GE Collector-Emitter Voltage, VCE [V] A I C = 2A 8A Gate-Emitter Voltage, V GE [V] Figure 9. Capacitance Characteristics Capacitance [pf] C iss C oss C rss V GE = V, f = MHz Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. V GE A I C = 2A 8A Gate-Emitter Voltage, V GE [V] Figure. Gate charge Characteristics Gate-Emitter Voltage, VGE [V] V cc = V 3V 2V. Figure. SOA Characteristics Gate Charge, Q g [nc] Figure 2. Turn-on Characteristics vs. Gate Resistance 2 Collector Current, Ic [A]. Single Nonrepetitive Pulse Curves must be derated linearly with increase in temperature s s ms ms. DC Switching Time [ns] t r t d(on) V CC = 4V, V GE = 5V I C = 4A Gate Resistance, R G [ ] 28 Fairchild Semiconductor Corporation 5

6 Typical Performance Characteristics Figure 3. Turn-off Characteristics vs. Gate Resistance Switching Time [ns] 55 V CC = 4V, V GE = 5V I C = 4A t d(off) Gate Resistance, R G [ ] Figure 5. Turn-off Characteristics vs. Collector Current Switching Time [ns] 6 V GE = 5V, R G = T C = 25 o C T C = 25 o C t f t f t d(off) Switching Time [ns] Switching Loss [mj] Figure 4. Turn-on Characteristics vs. Collector Current 5 V GE = 5V, R G = Collector Current, I C [A] Figure 6. Switching Loss vs. Gate Resistance V CC = 4V, V GE = 5V I C = 4A T C = 25 o C E off E on t r t d(on) Collector Current, I C [A] Figure 7. Switching Loss vs. Collector Current Switching Loss [mj] V GE = 5V, R G = E on E off Collector Current, I C [A] Gate Resistance, R G [ ] Figure 8. Turn off Switching SOA Characteristics Collector Current, IC [A] 2 Safe Operating Area V GE = 5V, 28 Fairchild Semiconductor Corporation 6

7 Typical Performance Characteristics Figure 9. Forward Characteristics Forward Current, IF [A] 8 T J = 25 o C T J = 25 o C T J = 75 o C T C = 75 o C Forward Voltage, V F [V] Figure 2. Stored Charge Reverse Current, I R [ A] Figure 2. Reverse Current 2. T J = 25 o C T J = 75 o C T J = 25 o C Reverse Voltage, V R [V] Figure 22. Reverse Recovery Time 6 Stored Recovery Charge, Qrr [nc] 8 2A/ s 6 di F /dt = A/ s Forward Current, I F [A] Reverse Recovery Time, trr [ns] 5 4 di F /dt = A/ s 2A/ s Forward Current, I F [A] Figure 23.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] single pulse Duty Factor, D = t/t2 Peak T j = Pdm x Zthjc + T C E-3 E-5 E-4 E-3.. Rectangular Pulse Duration [sec] P DM t t 2 28 Fairchild Semiconductor Corporation 7

8 Mechanical Dimensions Figure 24. TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: 28 Fairchild Semiconductor Corporation 8

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