FQPF2N70. N-Channel QFET MOSFET 700 V, 2.0 A, 6.3 Ω. FQPF2N70 N-Channel QFET MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted.
|
|
- Jennifer Sanders
- 7 years ago
- Views:
Transcription
1 FQPF2N70 N-Channel QFET MOSFET 700 V, 2.0 A, 6.3 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features November A, 700 V, R DS(on) = 6.3 Ω = 10 V, = 1.0 A Low Gate Charge (Typ. 9 nc) Low Crss (Typ. 5 pf) 100% Avalanche Tested D G DS TO-220F G S Absolute Maximum Ratings T C = 25 C unless otherwise noted. Symbol Parameter FQPF2N70 Unit S Drain-Source Voltage 700 V Drain Current - Continuous (T C = 25 C) 2.0* A - Continuous (T C = 100 C) 1.3* A M Drain Current - Pulsed (Note 1) 8.0* A S Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 140 mj I AR Avalanche Current (Note 1) 2.0 A E AR Repetitive Avalanche Energy (Note 1) 2.8 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D (T C = 25 C) 28 W Power Dissipation - Derate Above 25 C 0.22 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds 300 C *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQPF2N70 Unit R θjc Thermal Resistance, Junction-to-Case, Max C/W R θja Thermal Resistance, Junction-to-Ambient, Max
2 Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FQPF2N70 FQPF2N70 TO-220F Tube N/A N/A 50 units Electrical Characteristics T C = 25 C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, = 250 μa V ΔBS Breakdown Voltage Temperature I / ΔT J Coefficient D = 250 μa, Referenced to 25 C V/ C SS = 700 V, = 0 V μa Zero Gate Voltage Drain Current = 560 V, T C = 125 C μa I GSSF Gate-Body Leakage Current, Forward = 30 V, = 0 V na I GSSR Gate-Body Leakage Current, Reverse = -30 V, = 0 V na On Characteristics (th) Gate Threshold Voltage =, = 250 μa V R DS(on) Static Drain-Source V On-Resistance GS = 10 V, = 1.0 A Ω g FS Forward Transconductance = 50 V, = 1.0 A S Dynamic Characteristics C iss Input Capacitance = 25 V, = 0 V, pf C oss Output Capacitance f = 1.0 MHz pf C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns t r Turn-On Rise Time = 350 V, = 2.0 A, ns t d(off) Turn-Off Delay Time R G = 25 Ω ns t f Turn-Off Fall Time (Note 4) ns Q g Total Gate Charge = 560 V, = 2.0 A, nc Q gs Gate-Source Charge = 10 V nc Q gd Gate-Drain Charge (Note 4) nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current A I SM Maximum Pulsed Drain-Source Diode Forward Current A V SD Drain-Source Diode Forward Voltage = 0 V, I S = 2.0 A V t rr Reverse Recovery Time = 0 V, I S = 2.0 A, ns Q rr Reverse Recovery Charge di F / dt = 100 A/μs μc Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 45 mh, I AS = 2.0 A, = 50 V, R G = 25 Ω, starting T J = 25 C. 3. I SD 2.0 A, di/dt 200 A/μs, BS, starting T J = 25 C. 4. Essentially independent of operating temperature. 2
3 Typical Characteristics 10 0 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V , Drain-Source Voltage [V] Note : μs Pulse Test 2. T C = 25 Figure 1. On-Region Characteristics Note 1. = 50V μs Pulse Test , Gate-Source Voltage [V] Figure 2. Transfer Characteristics 15 R DS(ON) [Ω ], Drain-Source On-Resistance = 20V = 10V Note : T J = 25 R, Reverse Drain Current [A] Note : 1. = 0V μs Pulse Test V SD, Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitances [pf] C iss C oss C rss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Note ; 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] = 140V = 350V = 560V Note : = 2 A , Drain-Source Voltage [V] Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 3
4 Typical Characteristics (continued) BS, (Normalized) Drain-Source Breakdown Voltage T J, Junction Temperature [ o C] Note : 1. = 0 V 2. = 250 μa Figure 7. Breakdown Voltage Variation vs. Temperature R DS(ON), (Normalized) Drain-Source On-Resistance T J, Junction Temperature [ o C] Note : 1. = 10 V 2. = 3.1 A Figure 8. On-Resistance Variation vs. Temperature Operation in This Area is Limited by R DS(on) μs 1 ms 10 ms 100 ms , Drain-Source Voltage [V] DC Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse T C, Case Temperature [ ] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Z θjc (t), Thermal Response [ o C/W] Z θ JC (t), Thermal Response Notes : Z θ JC (t) = 4.46 /W M ax. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) 0.05 D= single pulse P DM t 1 t t 1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve 4
5 12V 200nF I G = const. 3mA 50KΩ 300nF Same Type as DUT DUT 10V Q gs Q g Q gd Charge Figure 12. Gate Charge Test Circuit & Waveform R L 90% R G V 10 DUT 10% t d(on) t r t d(off) tf t on t off Figure 13. Resistive Switching Test Circuit & Waveforms L E AS = LI 2 2 AS BS BS - BS I AS R G (t) V 10 DUT (t) t p Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms t p Time 5
6 R G DUT I SD Driver + _ Same Type as DUT L dv/dt controlled by RG I SD controlled by pulse period ( Driver ) Gate Pulse Width D = Gate Pulse Period 10V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms 6
7 Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: 7
8 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM GreenBridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Marking Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax mwsaver OptoHiT OPTOLOGIC OPTOPLANAR tm PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * μserdes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 8
FQP5N60C / FQPF5N60C N-Channel QFET MOSFET
FQP5N60C / FQPF5N60C N-Channel QFET MOSFET 600 V, 4.5 A,.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology.
More informationMBR20200CT Dual High Voltage Schottky Rectifier
MBR20200CT Dual High Voltage Schottky Rectifier Features Low Forward Voltage Drop Low Power Loss and High Efficiency High Surge Capability RoHS Compliant Matte Tin (Sn) Lead Finish Terminal Leads Surface
More information1N5401-1N5408 General-Purpose Rectifiers
N540 - N5408 General-Purpose Rectifiers Features 3.0 A Operation at T A = 75 C with No Thermal Runaway High Current Capability Low Leakage DO-20AD COLOR BAND DENOTES CATHODE August 205 N540 - N5408 General-Purpose
More informationSS32 - S310 Schottky Rectifier
SS32 - S310 Schottky Rectifier Features Metal to Silicon Rectifiers, Majority Carrier Conduction Low-Forward Voltage Drop Easy Pick and Place High-Surge Current Capability Description October 2013 The
More informationFeatures. I-PAK FQU Series
00V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
More informationApplications. Pin 1 TOP. WL-CSP 0.8X0.8 Thin
FDZ66PZ P-Channel.5 V Specified PowerTrench Thin WL-CSP MOSFET - V, -.6 A, 4 mω Features Max r DS(on) = 4 mω at V GS = -4.5 V, I D = - A Max r DS(on) = 8 mω at V GS = -.5 V, I D = -.5 A Max r DS(on) =
More informationQFET TM FQP50N06. Features. TO-220 FQP Series
60V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
More informationFGH40N60UFD 600 V, 40 A Field Stop IGBT
FGH4N6UFD 6 V, 4 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) =.8 V @ I C = 4 A High Input Impedance Fast Switching RoHS Compliant Applications Solar Inverter, UPS,
More informationP6KE6V8(C)A - P6KE440(C)A 600 W Transient Voltage Suppressors
P6KE6V8(C)A - P6KE440(C)A 600 W Transient Suppressors Features Glass-Passivated Junction 600 W Peak Pulse Power Capability at 1.0 ms Excellent Clamping Capability Low Incremental Surge Resistance Fast
More informationDescription. TO-220F FDPF Series. Symbol Parameter FDP26N40 FDPF26N40 Units V DSS Drain to Source Voltage 400 V V GSS Gate to Source Voltage ±30 V
FDP26N40 / FDPF26N40 N-Channel MOSFET 400V, 26A, 0.6Ω Features R DS(on) = 0.3Ω ( Typ.)@ V GS = 0V, I D = 3A Low gate charge ( Typ. 48nC) Low C rss ( Typ. 30pF) Fast switching 00% avalanche tested Improved
More informationFDD4243 40V P-Channel PowerTrench MOSFET -40V, -14A, 44mΩ Features
FDD443 4V P-Channel PowerTrench MOSFET -4V, -4A, 44mΩ Features Max r DS(on) = 44mΩ at V GS = -V, I D = -6.7A Max r DS(on) = 64mΩ at V GS = -4.5V, I D = -5.5A High performance trench technology for extremely
More informationSS22 - S210 Schottky Rectifier
SS22 - S210 Schottky Rectifier Features Glass-Passivated Junctions High-Current Capability, Low V F Applications Low Voltage High-Frequency Inverters Free Wheeling Polarity Protection Description October
More informationS1A - S1M General Purpose Rectifiers
S1A - S1M General Purpose Rectifiers Features 1 AI F(AV) Current Rating Glass Passivated Low Leakage: - 1 μa Maximum at 25 C - 50 μa Maximum at 125 C Fast Response: 1.8 μs (Typical) 30 A Surge Rating 50
More informationTIP41A / TIP41B / TIP41C NPN Epitaxial Silicon Transistor
TIP41A / TIP41B / TIP41C NPN Epitaxial Silicon Transistor Features Medium Power Linear Switching Applications Complement to TIP42 Series Ordering Information 1 TO-220 1.Base 2.Collector 3.Emitter November
More informationBD135 / 137 / 139 NPN Epitaxial Silicon Transistor
BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features Complement to BD136, BD138 and BD140 respectively Applications Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base August
More informationSymbol Parameter Ratings Units V DSS Drain-to-Source Voltage 80 V V GS Gate-to-Source Voltage ±20 V Drain Current - Continuous (V
FDBL8636_F85 N-Channel PowerTrench MOSFET 8 V, 3 A,.4 mω Features Typical R DS(on) =. mω at V GS = V, I D = 8 A Typical Q g(tot) = 72 nc at V GS = V, I D = 8 A UIS Capability RoHS Compliant Qualified to
More informationRS1A - RS1M Fast Rectifiers
RSA - RSM Fast Rectifiers Features Glass-Passivated Junction For Surface Mounted Applications uilt-in Strain Relief, Ideal for Automated Placement UL Certified: Certificate # E326243 SMA/DO-24AC COLOR
More informationFeatures 1.7 A, 20 V. R DS(ON) Symbol Parameter Ratings Units
N-Channel.5V Specified PowerTrench TM MOSFET April 999 General Description This N-Channel.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially
More informationN-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted
October 5 BSS38 BSS38 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild s proprietary,
More informationFeatures. T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units. (Note 1b) 0.46
N-Channel.8 Vgs Specified PowerTrench MOSFET October 2 General Description This 2V N-Channel MOSFET uses Fairchild s high voltage PowerTrench process. It has been optimized for power management applications.
More informationFDS6679AZ P-Channel PowerTrench MOSFET -30V, -13A, 9mΩ General Description
FS6679AZ P-Channel PowerTrench MOSFET -3V, -3A, 9mΩ General escription This P-Channel MOSFET is producted using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored
More informationLM78XX / LM78XXA 3-Terminal 1 A Positive Voltage Regulator
LM78XX / LM78XXA 3-Terminal A Positive oltage Regulator Features Output Current up to A s: 5, 6, 8, 9, 0,, 5, 8, 4 Thermal Overload Protection Short-Circuit Protection Output Transistor Safe Operating
More informationFeatures. TA=25 o C unless otherwise noted
NDSAN N-Channel, Logic Level, PowerTrench MOSFET June NDSAN General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been
More informationBC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor
BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor Features Switching and Amplifier High-oltage: BC546, CEO = 65 Low-Noise: BC549, BC550 Complement to BC556, BC557, BC558, BC559, and
More informationQRE1113, QRE1113GR Minature Reflective Object Sensor
QRE1113, QRE1113GR Minature Reflective Object Sensor Features Phototransistor output No contact surface sensing Miniature package Lead form style: Gull Wing QRE1113GR Package Dimensions 1.80 2.90 2.50
More informationFMBS2383 NPN Epitaxial Silicon Transistor
FMBS2383 NPN Epitaxial Silicon Transistor Features Power Amplifier ollector-emitter Voltage : V EO =60V urrent Gain Bandwidth Product : f T =20MHz SuperSOT TM -6 E B 2 3 6 5 4 April 20 Marking : 2383 Absolute
More informationIRF840. 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002
IRF84 Data Sheet January 22 8A, 5V,.85 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed
More informationBUZ11. 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET. Features. [ /Title (BUZ1 1) /Subject. (30A, 50V, 0.040 Ohm, N- Channel. Ordering Information
Data Sheet June 1999 File Number 2253.2 [ /Title (BUZ1 1) /Subject (3A, 5V,.4 Ohm, N- Channel Power MOS- FET) /Autho r () /Keywords (Intersil Corporation, N- Channel Power MOS- FET, TO- 22AB ) /Creator
More informationIRF640, RF1S640, RF1S640SM
IRF64, RFS64, RFS64SM Data Sheet January 22 8A, 2V,.8 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed,
More informationIRF510. 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002
IRF5 Data Sheet January 22 5.6A, V,.5 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed
More informationFeatures S 1. TA=25 o C unless otherwise noted. (Note 1b) 0.8
FC54P V P-Channel Logic Level PowerTrench MOSFET February 22 FC54P General escription This V P-Channel MOSFET uses Fairchild s high voltage PowerTrench process. It has been optimized for power management
More informationFQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
FQP8N80C/FQPF8N80C/FQPF8N80CYTU 800V N-Channel MOFET General escription These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, MO technology.
More informationFeatures I-PAK (TO-251AA) T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units
F62A/FU62A 2V N-Channel PowerTrench MOSFET General escription This N-Channel MOSFET has been designed specifically to improve the overall efficiency of C/C converters using either synchronous or conventional
More informationCD4040BC, 12-Stage Ripple Carry Binary Counters CD4060BC, 14-Stage Ripple Carry Binary Counters
CD4040BC, 12-Stage Ripple Carry Binary Counters CD4060BC, 14-Stage Ripple Carry Binary Counters Features Wide supply voltage range: 3.0V to 15V High noise immunity: 0.45 V DD (Typ.) Low power TTL compatibility:
More informationPower MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated
More informationPower MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationUNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION TO-263 TO-25 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast
More informationMID400 AC Line Monitor Logic-Out Device
MID400 AC Line Monitor Logic-Out Device Features Direct operation from any line voltage with the use of an external resistor. Externally adjustable time delay Externally adjustable AC voltage sensing level
More informationSMCJ5V0(C)A - SMCJ170(C)A 1500 Watt Transient Voltage Suppressors
SMCJ5V0(C)A - SMCJ170(C)A 1500 Watt Transient Suppressors Features Glass-Passivated Junction 1500 W Peak Pulse Power Capability on 10/0 μs Waveform. Excellent Clamping Capability Low-Incremental Surge
More informationPower MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationBC517 NPN Darlington Transistor
B517 NPN Darlington Transistor Features This device is designed for applications requiring extremely high current gain at currents to 1. A. Sourced from process 5. 1 2 3 1 2 3 September 215 TO-92 1. ollector
More informationN-Channel 60-V (D-S), 175 C MOSFET
N-Channel 6-V (D-S), 75 C MOSFET SUP/SUB7N6-4 V (BR)DSS (V) r DS(on) ( ) (A) 6.4 7 a TO-22AB D TO-263 DRAIN connected to TAB G G D S Top View SUP7N6-4 G D S Top View SUB7N6-4 S N-Channel MOSFET Parameter
More informationPower MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 5.0 V 0.077 Q g (Max.) (nc) 64 Q gs (nc) 9.4 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel
More informationN-Channel 40-V (D-S) 175 C MOSFET
N-Channel 4-V (D-S) 75 C MOSFET SUP/SUB85N4-4 PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A) 4.4 @ V GS = V 85 a TO-22AB D TO-263 G DRAIN connected to TAB G D S Top View Ordering Information SUP85N4-4
More informationPower MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
More informationBS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor
March 2010 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high
More information74LVX132 Low Voltage Quad 2-Input NAND Schmitt Trigger
74LVX132 Low Voltage Quad 2-Input NAND Schmitt Trigger Features Input voltage level translation from 5V to 3V Ideal for low power/low noise 3.3V applications Guaranteed simultaneous switching noise level
More information2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
November 995 N7 / N7 / NS7A N-Channel Enhancement Mode Field Effect Transistor General escription Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary,
More informationFSAL200 Wide Bandwidth Quad 2:1 Analog Multiplexer / De-multiplexer Switch
FSAL200 Wide Bandwidth Quad 2:1 Analog Multiplexer / De-multiplexer Switch Features Typical 6Ω Switch Connection Between Two Ports Minimal Propagation Delay Through the Switch Low I CC Zero Bounce in Flow-Through
More informationN-Channel 20-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUD7N-4P PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.37 @ V GS = V 37.6 @ V GS = 4.5 V 9 TO-5 D FEATURES TrenchFET Power MOSFET 75 C Junction Temperature PWM Optimized for
More informationMJD122 NPN Silicon Darlington Transistor
MJD NPN Silicon Darlington Transistor eatures D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead ormed for Surface Mount Applications Electrically Similar to
More informationFODM3011, FODM3012, FODM3022, FODM3023, FODM3052, FODM3053 4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers
April 9 FODM311, FODM31, FODM3, FODM33, FODM35, FODM353 4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers Features Compact 4-pin surface mount package (.4 mm maximum standoff
More informationPower MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.077 Q g (Max.) (nc) 72 Q gs (nc) 11 Q gd (nc) 32 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N8F6 110N8F6 TO-220 Tube
N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max I D P TOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W TO-220
More informationPower MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640
Power MOSFET PRODUCT SUMMARY V DS (V) 200 R DS(on) (Ω) = 10 V 0.50 Q g (Max.) (nc) 44 Q gs (nc) 7.1 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D
More informationD D D G S. E AS Single Pulse Avalanche Energy (Note 4) 337 mj Power Dissipation (Note 1a) 2.5 P D Power Dissipation (Note 1b) 1.
F883NZ N-Channel PowerTrench MOFET 3V, 8.5A, 4.5mΩ Features Max r (on) = 4.5mΩ at V G = V, I = 8.5A Max r (on) = 6.mΩ at V G = 4.5V, I =6A HBM E protection level of 5.6KV typical (note 3) High performance
More informationFDD5N50F N-Channel MOSFET, FRFET 500V, 3.5A, 1.55Ω Features
F5N50F N-Channel MOFET, FRFET 500V, 3.5A,.55Ω Features R (on) =.25Ω ( Typ.)@ V G = 0V, I =.75A Low gate charge ( Typ. nc) Low C rss ( Typ. 5pF) Fast switching 00% avalanche tested Improved dv/dt capability
More informationPower MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationFPF2163/4/5 Full Function Load Switch with Adjustable Current Limit
October 2008 FPF2163/4/5 Full Function Load Switch with Adjustable Current Limit Features 1.8 to 5.5V Input Voltage Range Controlled Turn-On 0.15-1.5A Adjustable Current Limit Undervoltage Lockout Thermal
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
More informationPower MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
More information74VHC112 Dual J-K Flip-Flops with Preset and Clear
74VHC112 Dual J-K Flip-Flops with Preset and Clear Features High speed: f MAX = 200MHz (Typ.) at V CC = 5.0V Low power dissipation: I CC = 2µA (Max.) at T A = 25 C High noise immunity: V NIH = V NIL =
More informationTSM2N7002K 60V N-Channel MOSFET
SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 5 @ V GS = 10V 100 60 5.5 @ V GS = 5V 100 Features Low On-Resistance ESD Protection High Speed Switching
More informationN-Channel 100 V (D-S) MOSFET
Si4DS N-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).4 at V GS = V..67 at V GS = 6 V..9 nc.78 at V GS = 4.5 V.7 FEATURES TrenchFET Power MOSFET % R g Tested
More informationSTN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description
N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET Features Type V DSS (@Tjmax) Exceptional dv/dt capability Avalanche rugged technology 100% avalanche tested R DS(on) max STN3NF06L 60 V < 0.1
More informationSTP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06 60V
More informationSTP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET
STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STB80NF55-08/-1 STP80NF55-08 55 V 55 V
More informationSTW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET
N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
More informationPower MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 10 V 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
More informationFOD060L, FOD260L 3.3V/5V High Speed-10 MBit/s Logic Gate Optocouplers
FOD060L, FOD260L 3.3V/5V High Speed-0 MBit/s Logic Gate Optocouplers Features FOD060L in SO8 and FOD260L in 8-pin DIP Very high speed 0 MBit/s Superior CMR 50 kv/µs at,000v peak Fan-out of 8 over -40 C
More informationSTP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06FP 60V
More informationN-channel enhancement mode TrenchMOS transistor
FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = V Low on-state resistance Fast switching I D = A High thermal cycling performance Low thermal resistance R DS(ON) mω (V GS = V) g s R DS(ON)
More informationFeatures. Symbol JEDEC TO-220AB
Data Sheet June 1999 File Number 2253.2 3A, 5V,.4 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching
More informationIRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET
N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE V DSS R DS(on) I D IRF740 400 V < 0.55 Ω 10 A TYPICAL R DS (on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY
More informationData Sheet September 2004. Features. Packaging
HGTG3N6A4D Data Sheet September 24 6V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG3N6A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs
More informationSTW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET
N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type V DSS R DS(on) I D STW34NB20 200 V < 0.075 Ω 34 A FEATURES SUMMARY TYPICAL R DS(on) = 0.062 Ω EXTREMELY
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD 9399A AUTOMOTIVE MOSFET Typical Applications Electric Power Steering (EPS) Antilock Braking System (ABS) Wiper Control Climate Control Power Door Benefits Advanced Process Technology Ultra Low OnResistance
More informationTSM020N03PQ56 30V N-Channel MOSFET
PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value Unit V DS 30 V R DS(on) (max) V GS = 10V 2 V GS = 4.5V 3 mω Q
More informationP-Channel 1.25-W, 1.8-V (G-S) MOSFET
Si5DS P-Channel.5-W,.-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = -.5 V ±.5 -.7 at V GS = -.5 V ±. at V GS = -. V ± FEATURES Halogen-free According to IEC 9-- Available TrenchFET
More informationP-Channel 20 V (D-S) MOSFET
Si30CDS P-Channel 0 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 0 0. at V GS = - 4.5 V - 3. 0.4 at V GS = -.5 V -.7 3.3 nc TO-36 (SOT-3) FEATURES Halogen-free According
More informationSTP55NF06L STB55NF06L - STB55NF06L-1
General features STP55NF06L STB55NF06L - STB55NF06L-1 N-channel 60V - 0.014Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II Power MOSFET Type V DSS R DS(on) I D STP55NF06L 60V
More informationV DSS I D. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 973B IRFB432PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low
More informationFL3100T Low-Side Gate Driver with PWM Dimming Control for Smart LED Lighting
August 2015 FL3100T Low-Side Gate Driver with LED PWM Dimming Control for Smart LED Lighting Features Non-inverting Input Logic with DIM Control Input for PWM Dimming Down to 0.1% for Hybrid Dimming 4.5
More informationN-Channel 60-V (D-S) MOSFET
7/7, VQJ/P, BS7 -Channel 6-V (D-S) MOSFET Part umber V (BR)DSS Min (V) r DS(on) Max ( ) V GS(th) (V) I D (A) 7 5 @ V GS = V.8 to. 7 7.5 @ V GS = V to.5.5 VQJ 6 5.5 @ V GS = V.8 to.5.5 VQP 5.5 @ V GS =
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.0. V/ns T J. mj I AR. Thermal Resistance Symbol Parameter Typ. Max.
PD 9727 IRFP326PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationSTP10NK80ZFP STP10NK80Z - STW10NK80Z
STP10NK80ZFP STP10NK80Z - STW10NK80Z N-channel 800V - 0.78Ω - 9A - TO-220/FP-TO-247 Zener-protected supermesh TM MOSFET General features Type V DSS R DS(on) I D Pw STP10NK80Z 800V
More informationRoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000
PD 97437A IRF93PbF HEXFET Power MOSFET V DS 30 V R DS(on) max (@V GS = V) I D (@T A = 25 C) 4. mω 20 A * SO8 Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rated Product
More informationSTB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP
STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V - 1.76 Ω - 4 A SuperMESH Power MOSFET DPAK - D 2 PAK - IPAK - I 2 PAK - TO-220 - TO-220FP Features Type V DSS R DS(on)
More informationSTP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET
N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE V DSS R DS(on) I D STP62NS04Z CLAMPED
More informationIRLR8729PbF IRLU8729PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced
More informationIRFP460LC PD - 9.1232. HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.27Ω I D = 20A
HEXFET Power MOSFET PD - 9.232 IRFP460LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive
More informationSTB75NF75 STP75NF75 - STP75NF75FP
STB75NF75 STP75NF75 - STP75NF75FP N-channel 75V - 0.0095Ω - 80A - TO-220 - TO-220FP - D 2 PAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STB75NF75 75V
More informationA I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units
V DS 2 V V GS Max ± 2 V R DSon) max @V GS = V) 24 m * PD - 9787A HEXFET Power MOSFET R DSon) max @V GS = 4.V) 4 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits
More informationV DSS R DS(on) max Qg. 30V 3.2mΩ 36nC
PD - 96232 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationFSA832 USB 2.0 High-Speed (480 Mbps) Charger Detection IC with Isolation Switch
FSA832 USB 2.0 High-Speed (480 Mbps) Charger Detection IC with Isolation Switch Features USB Detection Proprietary Charger and Other Detection Switch Type V BUS Package Ordering Information Applications
More informationA I DM. W/ C V GS Gate-to-Source Voltage ± 12. Thermal Resistance Symbol Parameter Typ. Max. Units
V DS 2 V V GS Max ±2 V * PD - 973A HEXFET Power MOSFET R DSon) max @V GS = 4.V) 2. m R DSon) max @V GS = 2.V) 27. m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits
More informationIRLR8743PbF IRLU8743PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationOptiMOS 3 Power-Transistor
Type IPD36N4L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS
More information