FQPF2N70. N-Channel QFET MOSFET 700 V, 2.0 A, 6.3 Ω. FQPF2N70 N-Channel QFET MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted.

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1 FQPF2N70 N-Channel QFET MOSFET 700 V, 2.0 A, 6.3 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features November A, 700 V, R DS(on) = 6.3 Ω = 10 V, = 1.0 A Low Gate Charge (Typ. 9 nc) Low Crss (Typ. 5 pf) 100% Avalanche Tested D G DS TO-220F G S Absolute Maximum Ratings T C = 25 C unless otherwise noted. Symbol Parameter FQPF2N70 Unit S Drain-Source Voltage 700 V Drain Current - Continuous (T C = 25 C) 2.0* A - Continuous (T C = 100 C) 1.3* A M Drain Current - Pulsed (Note 1) 8.0* A S Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 140 mj I AR Avalanche Current (Note 1) 2.0 A E AR Repetitive Avalanche Energy (Note 1) 2.8 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D (T C = 25 C) 28 W Power Dissipation - Derate Above 25 C 0.22 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds 300 C *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQPF2N70 Unit R θjc Thermal Resistance, Junction-to-Case, Max C/W R θja Thermal Resistance, Junction-to-Ambient, Max

2 Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FQPF2N70 FQPF2N70 TO-220F Tube N/A N/A 50 units Electrical Characteristics T C = 25 C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, = 250 μa V ΔBS Breakdown Voltage Temperature I / ΔT J Coefficient D = 250 μa, Referenced to 25 C V/ C SS = 700 V, = 0 V μa Zero Gate Voltage Drain Current = 560 V, T C = 125 C μa I GSSF Gate-Body Leakage Current, Forward = 30 V, = 0 V na I GSSR Gate-Body Leakage Current, Reverse = -30 V, = 0 V na On Characteristics (th) Gate Threshold Voltage =, = 250 μa V R DS(on) Static Drain-Source V On-Resistance GS = 10 V, = 1.0 A Ω g FS Forward Transconductance = 50 V, = 1.0 A S Dynamic Characteristics C iss Input Capacitance = 25 V, = 0 V, pf C oss Output Capacitance f = 1.0 MHz pf C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns t r Turn-On Rise Time = 350 V, = 2.0 A, ns t d(off) Turn-Off Delay Time R G = 25 Ω ns t f Turn-Off Fall Time (Note 4) ns Q g Total Gate Charge = 560 V, = 2.0 A, nc Q gs Gate-Source Charge = 10 V nc Q gd Gate-Drain Charge (Note 4) nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current A I SM Maximum Pulsed Drain-Source Diode Forward Current A V SD Drain-Source Diode Forward Voltage = 0 V, I S = 2.0 A V t rr Reverse Recovery Time = 0 V, I S = 2.0 A, ns Q rr Reverse Recovery Charge di F / dt = 100 A/μs μc Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 45 mh, I AS = 2.0 A, = 50 V, R G = 25 Ω, starting T J = 25 C. 3. I SD 2.0 A, di/dt 200 A/μs, BS, starting T J = 25 C. 4. Essentially independent of operating temperature. 2

3 Typical Characteristics 10 0 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V , Drain-Source Voltage [V] Note : μs Pulse Test 2. T C = 25 Figure 1. On-Region Characteristics Note 1. = 50V μs Pulse Test , Gate-Source Voltage [V] Figure 2. Transfer Characteristics 15 R DS(ON) [Ω ], Drain-Source On-Resistance = 20V = 10V Note : T J = 25 R, Reverse Drain Current [A] Note : 1. = 0V μs Pulse Test V SD, Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitances [pf] C iss C oss C rss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Note ; 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] = 140V = 350V = 560V Note : = 2 A , Drain-Source Voltage [V] Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 3

4 Typical Characteristics (continued) BS, (Normalized) Drain-Source Breakdown Voltage T J, Junction Temperature [ o C] Note : 1. = 0 V 2. = 250 μa Figure 7. Breakdown Voltage Variation vs. Temperature R DS(ON), (Normalized) Drain-Source On-Resistance T J, Junction Temperature [ o C] Note : 1. = 10 V 2. = 3.1 A Figure 8. On-Resistance Variation vs. Temperature Operation in This Area is Limited by R DS(on) μs 1 ms 10 ms 100 ms , Drain-Source Voltage [V] DC Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse T C, Case Temperature [ ] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Z θjc (t), Thermal Response [ o C/W] Z θ JC (t), Thermal Response Notes : Z θ JC (t) = 4.46 /W M ax. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) 0.05 D= single pulse P DM t 1 t t 1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve 4

5 12V 200nF I G = const. 3mA 50KΩ 300nF Same Type as DUT DUT 10V Q gs Q g Q gd Charge Figure 12. Gate Charge Test Circuit & Waveform R L 90% R G V 10 DUT 10% t d(on) t r t d(off) tf t on t off Figure 13. Resistive Switching Test Circuit & Waveforms L E AS = LI 2 2 AS BS BS - BS I AS R G (t) V 10 DUT (t) t p Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms t p Time 5

6 R G DUT I SD Driver + _ Same Type as DUT L dv/dt controlled by RG I SD controlled by pulse period ( Driver ) Gate Pulse Width D = Gate Pulse Period 10V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms 6

7 Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: 7

8 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM GreenBridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Marking Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax mwsaver OptoHiT OPTOLOGIC OPTOPLANAR tm PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * μserdes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 8

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