5LP01SP. P-Channel Small Signal MOSFET 50V, 0.07A, 23Ω, Single SPA. Features. Specifications

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1 Ordering number : EN661A LP1SP P-Channel Small Signal MOSFET V,.A, Ω, Single SPA Features Low ON-resistance Ultrahigh-speed switching.v drive Protection diode in Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions value Unit Drain to Source Voltage VDSS - V Gate to Source Voltage VGSS ±1 V Drain Current (DC) ID -. A Drain Current (Pulse) IDP PW 1μs, duty cycle 1% -.8 A Power Dissipation PD. W Junction Temperature Tj 1 C Storage Temperature Tstg -- to +1 C This product is designed to ESD immunity < V*, so please take care when handling. * Machine Model Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions unit : mm (typ) Ordering & Package Information LP1SP Device Package Shipping memo LP1SP-AC SPA SC- SPA SC- pcs./bag,pcs./box Pb-Free Marking XB LOT No. Electrical Connection : Source : Drain : Gate SPA 1 Semiconductor Components Industries, LLC, 14 April, TKIM TC-114/914 TS IM TA-19 No.661-1/6

2 LP1SP Electrical Characteristics at Ta= C Parameter Symbol Conditions Value min typ max Unit Drain to Source Breakdown Voltage V(BR)DSS ID=-1mA, VGS=V - V Zero-Gate Voltage Drain Current IDSS VDS=-V, VGS=V 1 μa Gate to Source Leakage Current IGSS VGS=±8V, VDS=V ±1 μa Gate Threshold Voltage VGS(th) VDS=-1V, ID=-1μA V Forward Transconductance g FS VDS=-1V, ID=-4mA 1 ms RDS(on)1 ID=-4mA, VGS=-4V 18 Ω On-State Resistance RDS(on) ID=-mA, VGS=-.V 8 Ω RDS(on) ID=-mA, VGS=-1.V 6 Ω Input Capacitance Ciss.4 pf Output Capacitance Coss VDS=-1V, f=1mhz 4. pf Reverse Transfer Capacitance Crss 1. pf Turn-ON Delay Time td(on) ns Rise Time tr ns See specified Test Circuit. Turn-OFF Delay Time td(off) 16 ns Fall Time tf 1 ns Total Gate Charge Qg 1.4 nc Gate to Source Charge Qgs VDS=-1V, VGS=-1V, ID=-mA.16 nc Gate to Drain Miller Charge Qgd. nc Forward Diode Voltage VSD IS=-mA, VGS=V.8 1. V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit VIN V --4V PW=1μs D.C. 1% VIN VDD= --V D ID= --4mA RL=6Ω VOUT G P.G Ω S LP1SP No.661-/6

3 LP1SP ID -- VDS --4.V --6.V --.V --.V --.V --.V V GS = --1.V ID -- VGS(th) Ta= -- C C C V DS = --1V Drain to Source Voltage, V DS -- V IT9 4 RDS(on) -- VGS Ta= C Gate to Source Voltage, V GS -- V IT91 RDS(on) -- ID V GS = --4V I D =--ma 1 --4mA Ta= C C -- C Gate to Source Voltage, V GS -- V IT9 RDS(on) -- ID V GS = --.V IT9 RDS(on) -- ID V GS = --1.V 1 Ta= C -- C C Ta= C C -- C IT94 IT9 RDS(on) -- Ta g 1. FS -- ID V DS = --1V.1 I D = --ma, VGS = --.V ID= --4mA, VGS= --4.V Forward Transconductance, g FS -- S Ta= -- C C C Ambient Temperature, Ta -- C IT IT9 No.661-/6

4 LP1SP Forward Current, I F -- A --.1 Ta= C C IF -- VSD -- C V GS = Switching Time, SW Time -- ns 1 1 t d (off) SW Time -- ID t f t r V DD = --V V GS = --4V t d (on) Forward Diode Voltage, V SD -- V Ciss, Coss, Crss -- VDS f=1mhz IT V DS = --1V I D = --ma VGS -- Qg --.1 IT99 Ciss, Coss, Crss -- pf 1 1. Ciss Coss Crss Gate to Source Voltage, V GS -- V Drain to Source Voltage, V DS -- V IT1 PD -- Ta Total Gate Charge, Qg -- nc IT11. Power Dissipation, P D -- W Ambient Temperature, Ta -- C IT8 No.661-4/6

5 LP1SP Outline Drawing LP1SP-AC Mass (g) Unit.1 * For reference mm No.661-/6

6 LP1SP Outline Drawing LP1SP Mass (g) Unit.1 * For reference mm Note on usage : Since the LP1SP is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.661-6/6