2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS

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1 ,, Medium-Power Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation Voltage Excellent Power Dissipation Due to Thermopad Construction Excellent Safe Operating Area Complement to PNP 2N492G These Devices are PbFree and are RoHS Compliant** MAXIMUM RATINGS CollectorEmitter Voltage CollectorEmitter Voltage Rating Symbol Value Unit V CEO 6 8 V CB 6 8 Emitter Base Voltage V EB 5. Collector Current Continuous (Note 1) I C Adc Collector Current Peak (Note 1) I CM 3. Adc Base Current Continuous I B Adc Total Power T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range P D 3 4 W mw/ C T J, T stg 65 to +15 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The A maximum I C value is based upon JEDEC current gain requirements. The 3. A maximum value is based upon actual current handling capability of the device (see Figures 5 and 6). THERMAL CHARACTERISTICS (Note 2) Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R JC 4.16 C/W 2. Recommend use of thermal compound for lowest thermal resistance. *Indicates JEDEC Registered Data. ** For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. AMPERE GENERAL PURPOSE POWER TRANSISTORS 8 VOLTS, 3 WATTS MARKING DIAGRAM Y = Year WW = Work Week 2N492x = Device Code x = 1, 2, or 3 G = PbFree Package Device Package Shipping BASE COLLECTOR 2, 4 ORDERING INFORMATION TO225 (PbFree) TO225 (PbFree) TO225 (PbFree) 1 EMITTER YWW 2 N492xG TO225 CASE 779 STYLE 1 5 Units / Box 5 Units / Box 5 Units / Box Semiconductor Components Industries, LLC, 213 December, 213 Rev Publication Order Number: 2N4921/D

2 ,, ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) (I C = Adc, I B = ) Collector Cutoff Current (V CE = 2, I B = ) (V CE = 3, I B = ) (V CE =, I B = ) Collector Cutoff Current (V CE = Rated V CEO, V EB(off) = 1.5 ) (V CE = Rated V CEO, V EB(off) = 1.5, T C = 125 C Collector Cutoff Current (V CB = Rated V CB, I E = ) Emitter Cutoff Current (V EB = 5., I C = ) ON CHARACTERISTICS DC Current Gain (Note 3) (I C = 5, V CE = ) (I C = 5, V CE = ) (I C = Adc, V CE = ) CollectorEmitter Saturation Voltage (Note 3) (I C = Adc, I B = Adc) BaseEmitter Saturation Voltage (Note 3) (I C = Adc, I B = Adc) BaseEmitter On Voltage (Note 3) (I C = Adc, V CE = ) SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = 25, V CE =, f = MHz) Output Capacitance (V CB =, I E =, f = khz) SmallSignal Current Gain (I C = 25, V CE =, f = khz) V CEO(sus) I CEO I CEX 6 8 I CBO I EBO h FE 3 15 V CE(sat).6 V BE(sat) 1.3 V BE(on) 1.3 f T 3. C ob h fe 25 MHz pf Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: PW 3 s, Duty Cycle 2.%. 2

3 ,, PD, POWER DISSIPATION (WATTS) T C, CASE TEMPERATURE ( C) Figure 1. Power Derating Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed. V in APPROX +11 V TURN-ON PULSE t 1 V CC R C V BE(off) V in R B C jd << C eb APPROX +11 V V in t 2 TURN-OFF PULSE t 3 SCOPE APPROX 9. V - 4. V t 1 15 ns < t 2 5 s t 3 15 ns DUTY CYCLE 2.% R B and R C varied to obtain desired current levels Figure 2. Switching Time Equivalent Circuit t, TIME ( s) μ t d V CC = 3 V V CC = 3 V I C /I B = 2 I C /I B =, UNLESS NOTED V CC = 6 V V CC = 6 V V BE(off) = 2. V V CC = 3 V.7 V BE(off) = Figure 3. TurnOn Time t r 3

4 ,, D = r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) SINGLE PULSE JC (t) = r(t) JC JC = 4.16 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) - T C = P (pk) JC (t) P (pk) t 1 t 2 DUTY CYCLE, D = t 1 /t t, TIME (ms) Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) ms SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY T C = 25 C PULSE CURVES APPLY BELOW RATED V CEO V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) dc ms s There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 15 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to % provided T J(pk) 15 C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. ActiveRegion Safe Operating Area I C /I B = I C /I B = 2 t s, STORAGE TIME ( s) μ.7 I C /I B = I B1 = I B2 t s = t s - 1/8 t f I C /I B = t f, FALL TIME ( s) μ.7 I C /I B = V CC = 3 V I B1 = I B2 Figure 6. Storage Time Figure 7. Fall Time 4

5 ,, hfe, DC CURRENT GAIN C - 55 C VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) I B, BASE CURRENT (ma) Figure 8. Current Gain V CE = V I C = A 5 A A A Figure 9. Collector Saturation Region R BE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS) I C = 2 x I CES I C I CES I CES VALUES OBTAINED FROM FIGURE 12 I C = x I CES V CE = 3 V VOLTAGE (VOLTS) V I C /I B =.6 V V CE = 2. V V I C /I B = T J, JUNCTION TEMPERATURE ( C) Figure. Effects of BaseEmitter Resistance Figure 11. On Voltage, COLLECTOR CURRENT ( A) μ IC C I C = I CES 25 C REVERSE FORWARD V BE, BASE-EMITTER VOLTAGE (VOLTS) Figure 12. Collector CutOff Region V CE = 3 V TEMPERATURE COEFFICIENTS (mv/ C) *APPLIES FOR I C /I B * VC FOR V CE(sat) VB FOR V BE h VCE V 2 T J = C to 15 C C to + C Figure 13. Temperature Coefficients 5

6 ,, PACKAGE DIMENSIONS 4 TO225 CASE 779 ISSUE AC FRONT VIEW BACK VIEW P Q E L1 D A1 A PIN 4 BACKSIDE TAB L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. MILLIMETERS DIM MIN MAX A A1 1.5 b.6.9 b c 9.63 D E e L L P Q STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE 2X b2 2X e b c FRONT VIEW SIDE VIEW Thermopad is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative 2N4921/D

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