C106 Series. Sensitive Gate Silicon Controlled Rectifiers

Size: px
Start display at page:

Download "C106 Series. Sensitive Gate Silicon Controlled Rectifiers"

Transcription

1 C6 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. Features Glassivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability Sensitive Gate Triggering These are PbFree Devices MAXIMUM RATINGS (T J = 25 C unless otherwise noted) Characteristic Symbol Max Unit Peak Repetitive OffState Voltage (Note 1) (Sine Wave, 5060 Hz, R GK = 1 k, V DRM, V RRM V T C = 40 to 1 C) C6B 200 C6D, C6D1* 400 C6M, C6M1* 600 On-State RMS Current (180 Conduction Angles, T C = 80 C) Average OnState Current (180 Conduction Angles, T C = 80 C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, T J = +25 C) I T(RMS) 4.0 A I T(AV) 2.55 A I TSM 20 A Circuit Fusing Considerations (t = 8.3 ms) I 2 t 1.65 A 2 s Forward Peak Gate Power (Pulse Width 1.0 sec, T C = 80 C) Forward Average Gate Power (Pulse Width 1.0 sec, T C = 80 C) Forward Peak Gate Current (Pulse Width 1.0 sec, T C = 80 C) P GM 0.5 W P G(AV) 0.1 W I GM 0.2 A Operating Range T J 40 to +1 Storage Temperature Range T stg 40 to +150 Mounting Torque (Note 2) 6.0 in. lb. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. C C SCRs 4 A RMS, Volts A TO225AA CASE 077 STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENT 1. Cathode 2. Anode 3. Gate Y WW C6xx xx G ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. G K YWW C6xxG = Year = Work Week = Device Code = B, D, D1, M, M1 = PbFree Package Semiconductor Components Industries, LLC, 2011 September, 2011 Rev. 1 Publication Order Number: C6/D

2 C6 Series THERMAL CHARACTERISTICS (T C = 25 C unless otherwise noted.) Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R JC 3.0 C/W Thermal Resistance, JunctiontoAmbient R JA 75 C/W Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for Seconds T L 260 C ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (V AK = Rated V DRM or V RRM, R GK = 1 k ) T J = 25 C T J = 1 C ON CHARACTERISTICS Peak Forward OnState Voltage (Note 3) (I TM = 4 A) Gate Trigger Current (Continuous dc) (Note 4) (V AK = 6 Vdc, R L = 0 ) T J = 25 C T J = 40 C I DRM, I RRM 0 A A V TM 2.2 V Peak Reverse Gate Voltage (I GR = A) V GRM 6.0 V Gate Trigger Voltage (Continuous dc) (Note 4) (V AK = 6 Vdc, R L = 0 ) T J = 25 C T J = 40 C Gate NonTrigger Voltage (Continuous dc) (Note 4) (V AK = 12 V, R L = 0, T J = 1 C) Latching Current (V AK = 12 V, I G = 20 ma, R GK = 1 k ) T J = 25 C T J = 40 C Holding Current (V D = 12 Vdc) (Initiating Current = 20 ma, R GK = 1 k ) T J = 25 C T J = 40 C T J = +1 C DYNAMIC CHARACTERISTICS I GT V GT V GD 0.2 V I L I H A V ma ma Critical RateofRise of OffState Voltage (V AK = Rated V DRM, Exponential Waveform, R GK = 1 k, T J = 1 C) dv/dt 8.0 V/ s 3. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. 4. R GK is not included in measurement. 2

3 C6 Series Voltage Current Characteristic of SCR + Current Anode + Symbol V DRM I DRM V RRM I RRM V TM I H Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current I RRM at V RRM on state Reverse Blocking Region (off state) Reverse Avalanche Region V TM I H + Voltage I DRM at V DRM Forward Blocking Region (off state) Anode T C, CASE TEMPERATURE ( C) HALF SINE WAVE RESISTIVE OR INDUCTIVE LOAD. 50 to 400 Hz I T(AV) AVERAGE ON STATE CURRENT (AMPERES) DC Figure 1. Average Current Derating P (AV), AVERAGE ON STATE POWER DISSIPATION (WATTS) HALF SINE WAVE RESISTIVE OR INDUCTIVE LOAD 50 TO 400Hz. JUNCTION TEMPERATURE 1 C I T(AV) AVERAGE ON STATE CURRENT (AMPERES) Figure 2. Maximum OnState Power Dissipation DC 3

4 C6 Series 0 00 I GT, GATE TRIGGER CURRENT ( A) I H, HOLDING CURRENT ( A) Figure 3. Typical Gate Trigger Current versus Figure 4. Typical Holding Current versus , GATE TRIGGER VOLTAGE (V) I L, LATCHING CURRENT ( A) 0 VGT Figure 5. Typical Gate Trigger Voltage versus Figure 6. Typical Latching Current versus 4

5 C6 Series PACKAGE INTERCHANGEABILITY The dimensional diagrams below compare the critical dimensions of the ON Semiconductor C-6 package with competitive devices. It has been demonstrated that the smaller dimensions of the ON Semiconductor package make it compatible in most lead-mount and chassis-mount applications. The user is advised to compare all critical dimensions for mounting compatibility DIA TYP BSC ON Semiconductor C-6 Package Competitive C-6 Package ORDERING INFORMATION Device Package Shipping C6BG TO225AA (PbFree) C6DG C6D1G* C6MG C6M1G* TO225AA (PbFree) TO225AA (PbFree) TO225AA (PbFree) TO225AA (PbFree) *D1 signifies European equivalent for D suffix and M1 signifies European equivalent for M suffix. 5

6 C6 Series PACKAGE DIMENSIONS TO225 CASE 7709 ISSUE Z H Q B U F A K V G S D 2 PL M C J R 0.25 (0.0) M A M B M 0.25 (0.0) M A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH THRU -08 OBSOLETE, NEW STANDARD INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G BSC 2.39 BSC H J K M 5 TYP 5 TYP Q R S U V STYLE 2: PIN 1. CATHODE 2. ANODE 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative C6/D

2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS

2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.

More information

MCR08B, MCR08M. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS

MCR08B, MCR08M. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS MCR8B, MCR8M Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls,

More information

MCR12DCM, MCR12DCN. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 12 AMPERES RMS VOLTS

MCR12DCM, MCR12DCN. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 12 AMPERES RMS VOLTS Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature,

More information

MCR100 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 A RMS 100 thru 600 V

MCR100 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 A RMS 100 thru 600 V Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls,

More information

(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6034. Plastic Darlington Complementary Silicon Power Transistors

(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6034. Plastic Darlington Complementary Silicon Power Transistors (PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors are designed for general purpose

More information

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors TIP140, TIP141, TIP142, (); TIP145, TIP146, TIP147, () Darlington Complementary Silicon Power Transistors Designed for generalpurpose amplifier and low frequency switching applications. Features High DC

More information

3EZ6.2D5 Series. 3 Watt DO-41 Surmetic 30 Zener Voltage Regulators

3EZ6.2D5 Series. 3 Watt DO-41 Surmetic 30 Zener Voltage Regulators EZ6.D Series Watt DO- Surmetic Zener Voltage Regulators This is a complete series of Watt Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon-oxide

More information

BC327, BC327-16, BC327-25, BC327-40. Amplifier Transistors. PNP Silicon. These are Pb Free Devices* http://onsemi.com. Features MAXIMUM RATINGS

BC327, BC327-16, BC327-25, BC327-40. Amplifier Transistors. PNP Silicon. These are Pb Free Devices* http://onsemi.com. Features MAXIMUM RATINGS BC327, BC327-16, BC327-25, BC327-4 Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 45 Vdc CollectorEmitter Voltage

More information

MPSA92, MPSA93. High Voltage Transistors. PNP Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS MARKING DIAGRAM

MPSA92, MPSA93. High Voltage Transistors. PNP Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS MARKING DIAGRAM MPSA92, High Voltage Transistors PNP Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit MPSA92 MPSA92 V CEO V CBO 200

More information

BU323Z. NPN Silicon Power Darlington. High Voltage Autoprotected 10 AMPERE DARLINGTON AUTOPROTECTED VOLTS CLAMP, 150 WATTS

BU323Z. NPN Silicon Power Darlington. High Voltage Autoprotected 10 AMPERE DARLINGTON AUTOPROTECTED VOLTS CLAMP, 150 WATTS NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, highvoltage power Darlington with a builtin active zener clamping circuit. This device is specifically designed

More information

2N6426, 2N6427. Darlington Transistors. NPN Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N6426, 2N6427. Darlington Transistors. NPN Silicon. These are Pb Free Devices* Features.  MAXIMUM RATINGS THERMAL CHARACTERISTICS 2N6426, 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 40 Vdc Collector Base

More information

1N59xxBRNG Series. 3 W DO-41 Surmetic 30 Zener Voltage Regulators

1N59xxBRNG Series. 3 W DO-41 Surmetic 30 Zener Voltage Regulators W DO-4 Surmetic 0 Zener Voltage Regulators This is a N9xxBRNG series with limits and excellent operating characteristics that reflect the superior capabilities of silicon oxide passivated junctions. All

More information

2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS

2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS NPN Darlington Silicon Power Transistor The NPN Darlington silicon power transistor is designed for general purpose amplifier and low frequency switching applications. High DC Current Gain h FE = 3000

More information

Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C

Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C 2N6284 (NPN); 2N6286, Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general purpose amplifier and low frequency switching applications. Features High

More information

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60-80 VOLTS

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60-80 VOLTS 2N6388 is a Preferred Device Plastic MediumPower Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500

More information

1SMB59xxBT3G Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators

1SMB59xxBT3G Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators 9xxBTG Series, SZ9xxTG Series Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of W Zener diodes offers the following advantages. Features Zener Voltage Range. V to V ESD Rating

More information

NUD4011. Low Current LED Driver

NUD4011. Low Current LED Driver NUD0 Low LED Driver This device is designed to replace discrete solutions for driving LEDs in AC/DC high voltage applications (up to 00 V). An external resistor allows the circuit designer to set the drive

More information

MMSZxxxT1G Series, SZMMSZxxxT1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

MMSZxxxT1G Series, SZMMSZxxxT1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount MMSZxxxTG Series, SZMMSZxxxTG Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices

More information

2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40 80 VOLTS, 30 WATTS

2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40 80 VOLTS, 30 WATTS ,, Medium-Power Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation Voltage Excellent

More information

1N5333B Series. 5 Watt Surmetic 40 Zener Voltage Regulators

1N5333B Series. 5 Watt Surmetic 40 Zener Voltage Regulators Preferred Device Watt Surmetic 40 Zener Voltage Regulators This is a complete series of Watt Zener diodes with tight limits and better operating characteristics that reflect the superior capabilities of

More information

1PMT5920B Series. 3.2 Watt Plastic Surface Mount POWERMITE Package PLASTIC SURFACE MOUNT 3.2 WATT ZENER DIODES 6.2-47 VOLTS

1PMT5920B Series. 3.2 Watt Plastic Surface Mount POWERMITE Package PLASTIC SURFACE MOUNT 3.2 WATT ZENER DIODES 6.2-47 VOLTS PMT90B Series. Watt Plastic Surface Mount POWERMITE Package This complete new line of. Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat

More information

1N5820, 1N5821, 1N5822. Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS

1N5820, 1N5821, 1N5822. Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS 1N58, 1N5821, 1N5822 1N58 and 1N5822 are Preferred Devices Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features

More information

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features NTMS9N Power MOSFET 3 V, 7 A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices

More information

MPS2907A Series. General Purpose Transistors. PNP Silicon. These are Pb Free Devices* Features MAXIMUM RATINGS

MPS2907A Series. General Purpose Transistors. PNP Silicon. These are Pb Free Devices*  Features MAXIMUM RATINGS General Purpose Transistors PNP Silicon Features These are PbFree Devices* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 6 Vdc CollectorBase Voltage V CBO 6 Vdc EmitterBase

More information

BC337, BC337-25, BC337-40. Amplifier Transistors. NPN Silicon. These are Pb Free Devices. http://onsemi.com. Features MAXIMUM RATINGS

BC337, BC337-25, BC337-40. Amplifier Transistors. NPN Silicon. These are Pb Free Devices. http://onsemi.com. Features MAXIMUM RATINGS BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage

More information

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS THERMAL CHARACTERISTICS General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 6 Vdc Emitter

More information

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO 65 45

More information

PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAM

PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available*  Features MAXIMUM RATINGS MARKING DIAGRAM , General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Collector-Emitter Voltage Rating Symbol Value Unit V CEO 3 4 2 BASE 1 EMITTER Collector-Base

More information

2N5460, 2N5461, 2N5462. JFET Amplifier. P Channel Depletion. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS

2N5460, 2N5461, 2N5462. JFET Amplifier. P Channel Depletion. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS 2N546, 2N5461, JFET Amplifier PChannel Depletion Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Drain Gate Voltage V DG 4 Vdc Reverse Gate Source Voltage V GSR 4 Vdc Forward

More information

NUD4001, NSVD4001. High Current LED Driver

NUD4001, NSVD4001. High Current LED Driver NUD, NSVD High Current LED Driver This device is designed to replace discrete solutions for driving LEDs in low voltage AC DC applications. V, V or V. An external resistor allows the circuit designer to

More information

MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G. JFET Switching Transistors. N Channel

MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G. JFET Switching Transistors. N Channel LT1G, SLT1G, LT1G, LT1G JFET Switching Transistors NChannel Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable

More information

MMJT9435. Bipolar Power Transistors. PNP Silicon. POWER BJT I C = 3.0 AMPERES BV CEO = 30 VOLTS V CE(sat) = VOLTS

MMJT9435. Bipolar Power Transistors. PNP Silicon. POWER BJT I C = 3.0 AMPERES BV CEO = 30 VOLTS V CE(sat) = VOLTS Preferred Device Bipolar Power Transistors PNP Silicon Features PbFree Packages are Available Collector Emitter Sustaining oltage CEO(sus) = 3 (Min) @ I C = madc High DC Current Gain h FE = 125 (Min) @

More information

TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors

TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features

More information

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. http://onsemi.com MAXIMUM RATINGS

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. http://onsemi.com MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Package is Available* COLLECTOR 1 2 BASE MAXIMUM RATINGS Collector-Emitter oltage Collector-Base oltage Rating Symbol alue Unit CEO 65

More information

MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS

MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS , is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit

More information

MMBZ52xxBLT1G Series, SZMMBZ52xxBLT3G. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

MMBZ52xxBLT1G Series, SZMMBZ52xxBLT3G. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount MMBZ5xxBLTG Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed

More information

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS N393, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 4 Vdc CollectorBase Voltage V CBO 6 Vdc EmitterBase

More information

MC1413, MC1413B, NCV1413B. High Voltage, High Current Darlington Transistor Arrays

MC1413, MC1413B, NCV1413B. High Voltage, High Current Darlington Transistor Arrays MC43, MC43B, NCV43B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers

More information

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS 2N396 General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V

More information

2N2222A. Small Signal Switching Transistor. NPN Silicon. MIL PRF 19500/255 Qualified Available as JAN, JANTX, and JANTXV. http://onsemi.com.

2N2222A. Small Signal Switching Transistor. NPN Silicon. MIL PRF 19500/255 Qualified Available as JAN, JANTX, and JANTXV. http://onsemi.com. Small Signal Switching Transistor NPN Silicon Features MILPRF19/ Qualified Available as JAN, JANTX, and JANTXV COLLECTOR MAXIMUM RATINGS (T A = unless otherwise noted) Characteristic Symbol Value Unit

More information

1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional

1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional .AT3G Series, SZ.AT3G Series 4 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The series is designed to protect voltage sensitive components from high voltage, high energy transients.

More information

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish N393, N393 is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Package May be Available. The GSuffix Denotes a PbFree Lead Finish MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter

More information

J309, J310. N Channel Depletion. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

J309, J310. N Channel Depletion. Pb Free Packages are Available* Features.  MAXIMUM RATINGS MARKING DIAGRAM J9, Preferred Device JFET VHF/UHF Amplifiers NChannel Depletion Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V DS 25 Vdc Gate Source Voltage V GS

More information

P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features. http://onsemi.com

P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features. http://onsemi.com Amplifier Transistors NPN Silicon Features These are PbFree Devices* MAXIMUM RATINGS (T A = 25 C unless otherwise noted) Characteristic Symbol Value Unit CollectorEmitter Voltage V CEO 4 CollectorBase

More information

1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series. 1500 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*

1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series. 1500 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional* .6.8AT3G Series, SZ.6.8AT3G Series 00 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The series is designed to protect voltage sensitive components from high voltage, high energy transients.

More information

ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection

ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The ESD9X Series is designed to protect voltage sensitive components from ESD. Excellent

More information

BUB323Z. NPN Silicon Power Darlington High Voltage Autoprotected D 2 PAK for Surface Mount

BUB323Z. NPN Silicon Power Darlington High Voltage Autoprotected D 2 PAK for Surface Mount NPN Silicon Power Darlington High Voltage Autoprotected D 2 PAK for Surface Mount The BUB323Z is a planar, monolithic, highvoltage power Darlington with a builtin active zener clamping circuit. This device

More information

1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007. Axial Lead Standard Recovery Rectifiers

1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007. Axial Lead Standard Recovery Rectifiers 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007 Axial ead Standard Recovery Rectifiers This data sheet provides information on subminiature size, axial lead mounted rectifiers for general purpose

More information

LC03-6R2G. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces. SO-8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 2 kw PEAK POWER 6 VOLTS

LC03-6R2G. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces. SO-8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 2 kw PEAK POWER 6 VOLTS Low Capacitance Surface Mount TVS for High-Speed Data terfaces The LC3- transient voltage suppressor is designed to protect equipment attached to high speed communication lines from ESD, EFT, and lighting.

More information

MC14008B. 4-Bit Full Adder

MC14008B. 4-Bit Full Adder 4-Bit Full Adder The MC4008B 4bit full adder is constructed with MOS PChannel and NChannel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast

More information

NSI45060JDT4G. Adjustable Constant Current Regulator & LED Driver. 45 V, 60 100 ma 15%, 2.7 W Package

NSI45060JDT4G. Adjustable Constant Current Regulator & LED Driver. 45 V, 60 100 ma 15%, 2.7 W Package NSI5JDTG Adjustable Constant Current Regulator & Driver 5 V, ma 5%, 2.7 W Package The adjustable constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost effective

More information

MBR2045CT SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS

MBR2045CT SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS Preferred Device... using the Schottky Barrier principle with a platinum barrier metal. These state of the art devices have the following features: Guardring for Stress Protection Low Forward Voltage 150

More information

ESD7016. Low Capacitance ESD Protection USB3.0

ESD7016. Low Capacitance ESD Protection USB3.0 Low Capacitance ESD Protection USB3. The ESD716 transient voltage suppressor is specifically designed to protect USB3. interfaces by integrating two Superspeed pairs, D+, D, and Vbus lines into a single

More information

225 mw SOT 23 Surface Mount

225 mw SOT 23 Surface Mount 225 mw SOT 23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT 23 package. These devices are designed to provide voltage regulation with minimum space requirement.

More information

MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications

MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications MJD (NPN), MJD7 (PNP) Complementary Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as

More information

LM350. 3.0 A, Adjustable Output, Positive Voltage Regulator THREE TERMINAL ADJUSTABLE POSITIVE VOLTAGE REGULATOR

LM350. 3.0 A, Adjustable Output, Positive Voltage Regulator THREE TERMINAL ADJUSTABLE POSITIVE VOLTAGE REGULATOR 3. A, able Output, Positive Voltage Regulator The is an adjustable threeterminal positive voltage regulator capable of supplying in excess of 3. A over an output voltage range of 1.2 V to 33 V. This voltage

More information

ESD7016, SZESD7016. Low Capacitance ESD Protection USB3.0

ESD7016, SZESD7016. Low Capacitance ESD Protection USB3.0 Low Capacitance ESD Protection USB3. The ESD716 transient voltage suppressor is specifically designed to protect USB3. interfaces by integrating two Superspeed pairs, D+, D, and Vbus lines into a single

More information

NB2304A. 3.3 V Zero Delay Clock Buffer

NB2304A. 3.3 V Zero Delay Clock Buffer 3.3 V Zero Delay Clock Buffer The NB304A is a versatile, 3.3 V zero delay buffer designed to distribute high-speed clocks in PC, workstation, datacom, telecom and other high-performance applications. It

More information

NS5B1G384. Single (NC) Normally Closed SPST Analog Switch

NS5B1G384. Single (NC) Normally Closed SPST Analog Switch Single (NC) Normally Closed SPST Analog Switch The NSB1G384 is Single Pole Single Throw (SPST) high-speed TTL-compatible switch. The low resistance and capacitance characteristics of this switch make it

More information

NVTFS4C10N. Power MOSFET. 30 V, 7.4 m, 47 A, Single N Channel, 8FL

NVTFS4C10N. Power MOSFET. 30 V, 7.4 m, 47 A, Single N Channel, 8FL NVTFS4CN Power MOSFET 3 V, 7.4 m, 47 A, Single N Channel, 8FL Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses

More information

LM285, LM385B. Micropower Voltage Reference Diodes

LM285, LM385B. Micropower Voltage Reference Diodes Micropower oltage Reference Diodes The LM25/LM35 series are micropower twoterminal bandgap voltage regulator diodes. Designed to operate over a wide current range of A to 2 ma, these devices feature exceptionally

More information

MC74VHC1GT04. Inverting Buffer / CMOS Logic Level Shifter. LSTTL Compatible Inputs

MC74VHC1GT04. Inverting Buffer / CMOS Logic Level Shifter. LSTTL Compatible Inputs MC74CGT04 Inverting Buffer / CMOS Logic Level Shifter LSTTL Compatible Inputs The MC74CGT04 is a single gate inverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation

More information

SCR, 12 A, 15mA, 500 V, SOT78. Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.

SCR, 12 A, 15mA, 500 V, SOT78. Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package. Rev. 5 2 March 29 Product data sheet 1. Product profile 1.1 General description Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package. 1.2 Features and benefits High reliability

More information

SN74LS283MEL. 4 Bit Binary Full Adder with Fast Carry LOW POWER SCHOTTKY

SN74LS283MEL. 4 Bit Binary Full Adder with Fast Carry LOW POWER SCHOTTKY 4 Bit Binary Full Adder with Fast Carry The SN74LS283 is a high-speed 4-Bit Binary Full Adder with internal carry lookahead. It accepts two 4-bit binary words (A A 4, B B 4 ) and a Carry Input (C 0 ).

More information

CS8481. 3.3 V/250 ma, 5.0 V/100 ma Micropower Low Dropout Regulator with ENABLE

CS8481. 3.3 V/250 ma, 5.0 V/100 ma Micropower Low Dropout Regulator with ENABLE 3.3 /250 ma, 5.0 /100 ma Micropower Low Dropout Regulator with The CS8481 is a precision, dual Micropower linear voltage regulator. The switched 3.3 primary output ( OUT1 ) supplies up to 250 ma while

More information

P1727/D. Notebook LCD Panel EMI Reduction IC. Features. Applications. Product Description. Block Diagram PDB

P1727/D. Notebook LCD Panel EMI Reduction IC. Features. Applications. Product Description. Block Diagram PDB Notebook LCD Panel EMI Reduction IC Features FCC approved method of EMI attenuation Generates a low EMI spread spectrum of the input clock frequency Optimized for frequency range: P727X: 20MHz to 40MHz

More information

Diode Thyristors SEMICONDUCTOR TECHNICAL DATA

Diode Thyristors SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by /D Diode Thyristors... designed for full-wave triggering in Triac phase control circuits, half-wave SCR triggering application and as voltage level detectors.

More information

NUP2105L, SZNUP2105L. Dual Line CAN Bus Protector SOT 23 DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR 350 W PEAK POWER

NUP2105L, SZNUP2105L. Dual Line CAN Bus Protector SOT 23 DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR 350 W PEAK POWER Dual Line CAN Bus Protector The SZ/NUP215L has been designed to protect the CAN transceiver in high speed and fault tolerant networks from ESD and other harmful transient voltage events. This device provides

More information

CAT4101TV. 1 A Constant-Current LED Driver with PWM Dimming

CAT4101TV. 1 A Constant-Current LED Driver with PWM Dimming A Constant-Current LED Driver with PWM Dimming Description The CAT4 is a constant current sink driving a string of high brightness LEDs up to A with very low dropout of.5 V at full load. It requires no

More information

MC10SX1190. Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit

MC10SX1190. Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit Description The MC10SX1190 is a differential receiver, differential transmitter specifically designed to drive coaxial cables. It incorporates

More information

NE592 Video Amplifier

NE592 Video Amplifier Video Amplifier The NE is a monolithic, two-stage, differential output, wideband video amplifier. It offers fixed gains of and without external components and adjustable gains from to with one external

More information

ESD7484. 4-Line Ultra-Large Bandwidth ESD Protection

ESD7484. 4-Line Ultra-Large Bandwidth ESD Protection 4-Line Ultra-Large Bandwidth ESD Protection Functional Description The ESD7484 chip is a monolithic, application specific discrete device dedicated to ESD protection of the HDMI connection. It also offers

More information

16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS

16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS Preferred Devices The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Total Harmonic

More information

SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS

SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS 1N5817 and 1N5819 are Preferred Devices... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features chrome barrier metal, epitaxial construction

More information

NUP4106. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces SO 8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 500 WATTS PEAK POWER 3.

NUP4106. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces SO 8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 500 WATTS PEAK POWER 3. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces The NUP0 transient voltage suppressor is designed to protect equipment attached to high speed communication lines from ESD and lightning.

More information

MC10SX1189. Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit FIBRE CHANNEL COAXIAL CABLE DRIVER AND LOOP RE- SILIENCY CIRCUIT

MC10SX1189. Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit FIBRE CHANNEL COAXIAL CABLE DRIVER AND LOOP RE- SILIENCY CIRCUIT Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit Description The MC10SX1189 is a differential receiver, differential transmitter specifically designed to drive coaxial cables. It incorporates

More information

AND8433/D. Using ON Semiconductor Constant Current Regulator (CCR) Devices in AC Applications APPLICATION NOTE

AND8433/D. Using ON Semiconductor Constant Current Regulator (CCR) Devices in AC Applications APPLICATION NOTE Using ON Semiconductor Constant Current Regulator (CCR) Devices in AC Applications Introduction This update includes additional information on 220 V ac lighting circuits with the addition of ON Semiconductors

More information

CS3341, CS3351, CS387. Alternator Voltage Regulator Darlington Driver

CS3341, CS3351, CS387. Alternator Voltage Regulator Darlington Driver Alternator Voltage Regulator Darlington Driver The CS3341/3351/387 integral alternator regulator integrated circuit provides the voltage regulation for automotive, 3 phase alternators. It drives an external

More information

LM337. 1.5 A, Adjustable Output, Negative Voltage Regulator THREE TERMINAL ADJUSTABLE NEGATIVE VOLTAGE REGULATOR

LM337. 1.5 A, Adjustable Output, Negative Voltage Regulator THREE TERMINAL ADJUSTABLE NEGATIVE VOLTAGE REGULATOR 1.5 A, able Output, Negative Voltage Regulator The LM337 is an adjustable 3terminal negative voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of 1.2 V to 37 V. This

More information

logic level for RCD/ GFI applications

logic level for RCD/ GFI applications logic level for RCD/ GFI applications BT68 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended

More information

BSP52T1 MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR

BSP52T1 MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package,

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BT151 series C Thyristors

DISCRETE SEMICONDUCTORS DATA SHEET. BT151 series C Thyristors DISCRETE SEMICONDUCTORS DATA SHEET Product specification April 24 Product specification GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT

More information

MC74VHC138/D. 3-to-8 Line Decoder

MC74VHC138/D. 3-to-8 Line Decoder MCHC8 -to-8 Line Decoder The MCHC8 is an advanced high speed CMOS to 8 decoder fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL

More information

NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V

NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V NGD5NCL, NGD5NACL, NGB5NCL, NGB5NACL, NGP5NCL, NGP5NACL Ignition IGBT 5 A, V N Channel DPAK, D PAK and TO This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating

More information

= CSPEMI205G. 3-Channel Headset Microphone EMI Filter with ESD Protection

= CSPEMI205G. 3-Channel Headset Microphone EMI Filter with ESD Protection 3-Channel Headset Microphone EMI Filter with ESD Protection Product Description The CSPEMI205G is a low pass filter array integrating three pi style filters (C R C) that reduce EMI/RFI emissions while

More information

LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION PLASTIC N SUFFIX CASE 648

LOW POWER SCHOTTKY.  GUARANTEED OPERATING RANGES ORDERING INFORMATION PLASTIC N SUFFIX CASE 648 The is an UP/DOWN MODULO-16 Binary Counter. Separate Count Up and Count Down Clocks are used and the circuits can operate synchronously. The outputs change state synchronous with the LOW-to-HIGH transitions

More information

logic level for RCD/ GFI/ LCCB applications

logic level for RCD/ GFI/ LCCB applications logic level for RCD/ GFI/ LCCB applications BT68W series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope

More information

P3P18S19/D. Notebook LCD Panel EMI Reduction IC. Features. Applications. Product Description. Block Diagram

P3P18S19/D. Notebook LCD Panel EMI Reduction IC. Features. Applications. Product Description. Block Diagram Notebook LCD Panel EMI Reduction IC Features FCC approved method of EMI attenuation. Provides up to 15dB EMI reduction. Generates a low EMI Spread Spectrum clock and a non-spread reference clock of the

More information

MC74AC138, MC74ACT138. 1-of-8 Decoder/Demultiplexer

MC74AC138, MC74ACT138. 1-of-8 Decoder/Demultiplexer -of-8 Decoder/Demultiplexer The MC74AC38/74ACT38 is a high speed of 8 decoder/demultiplexer. This device is ideally suited for high speed bipolar memory chip select address decoding. The multiple input

More information

MC34063A, MC33063A, NCV33063A. 1.5 A, Step Up/Down/ Inverting Switching Regulators

MC34063A, MC33063A, NCV33063A. 1.5 A, Step Up/Down/ Inverting Switching Regulators MC3403A, MC3303A, NCV3303A. A, StepUp/Down/ Inverting Switching Regulators The MC3403A Series is a monolithic control circuit containing the primary functions required for DCtoDC converters. These devices

More information

LOW POWER SCHOTTKY. http://onsemi.com GUARANTEED OPERATING RANGES ORDERING INFORMATION

LOW POWER SCHOTTKY. http://onsemi.com GUARANTEED OPERATING RANGES ORDERING INFORMATION The TTL/MSI SN74LS151 is a high speed 8-input Digital Multiplexer. It provides, in one package, the ability to select one bit of data from up to eight sources. The LS151 can be used as a universal function

More information

1N5817, 1N5818, 1N5819. Axial Lead Rectifiers. SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS

1N5817, 1N5818, 1N5819. Axial Lead Rectifiers. SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS 1N5817 and 1N5819 are Preferred Devices Axial ead Rectifiers This series employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features chrome barrier

More information

MC14049B, MC14050B. Hex Buffer

MC14049B, MC14050B. Hex Buffer MC49B, MC5B Hex Buffer The MC49B Hex Inverter/Buffer and MC5B Noninverting Hex Buffer are constructed with MOS PChannel and NChannel enhancement mode devices in a single monolithic structure. These complementary

More information

MC14001B Series. B Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B

MC14001B Series. B Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B MC4B Series BSuffix Series CMOS Gates MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure

More information

SZNUP2201MR6T1G SZNUP2201MR6. Transient Voltage Suppressors. ESD Protection Diodes with Low Clamping Voltage

SZNUP2201MR6T1G SZNUP2201MR6. Transient Voltage Suppressors. ESD Protection Diodes with Low Clamping Voltage NUP0MR, SZNUP0MR Transient Voltage Suppressors ESD Protection Diodes with Low Clamping Voltage The NUP0MR transient voltage suppressor is designed to protect high speed data lines from ESD, EFT, and lightning.

More information

MTD3055VT4. http://onsemi.com. MAXIMUM RATINGS (T C = 25 C unless otherwise noted) MARKING DIAGRAMS ORDERING INFORMATION. R DS(on) TYP 60 V 100 m

MTD3055VT4. http://onsemi.com. MAXIMUM RATINGS (T C = 25 C unless otherwise noted) MARKING DIAGRAMS ORDERING INFORMATION. R DS(on) TYP 60 V 100 m MTD55V Preferred Device Power MOSFET Amps, 6 Volts NChannel This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

(250 Volts Peak) SEMICONDUCTOR TECHNICAL DATA

(250 Volts Peak) SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MOC00/D (0 Volts Peak) The MOC00 Series consists of gallium arsenide infrared emitting diodes, optically coupled to silicon bilateral switch and are

More information

Passivated, sensitive gate triacs in a SOT54 plastic package. General purpose switching and phase control

Passivated, sensitive gate triacs in a SOT54 plastic package. General purpose switching and phase control TO-92 Rev. 9 9 November 2 Product data sheet. Product profile. General description Passivated, sensitive gate triacs in a SOT54 plastic package.2 Features and benefits Designed to be interfaced directly

More information

MARKING DIAGRAMS DIP PIN ASSIGNMENT CLOCKED TRUTH TABLE LOGIC DIAGRAM ORDERING INFORMATION CDIP 16 L SUFFIX CASE 620

MARKING DIAGRAMS DIP PIN ASSIGNMENT CLOCKED TRUTH TABLE LOGIC DIAGRAM ORDERING INFORMATION CDIP 16 L SUFFIX CASE 620 The MC1011 is a dual master slave type D flip flop. Asynchronous Set (S) and Reset (R) override Clock (C C ) and Clock Enable (C E ) inputs. Each flip flop may be clocked separately by holding the common

More information