PD Storage Temperature Range Tstg 65 to +150 C Junction Temperature TJ 200 C

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1 SEMICONDUCTOR TECHNICAL DATA Order this document by MRF228/D The RF Line... designed for. volt VHF large signal power amplifiers in commercial and industrial FM equipment. Compact.28 Stud Package Specified. V, 17 MHz Performance Output Power = 1 Watts Power Gain = db Min Efficiency = % Min Characterized to 22 MHz Load Mismatch Capability at High Line and Overdrive 1 W MHz RF POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO Vdc Collector Base Voltage VCBO 3 Vdc Emitter Base Voltage VEBO 4. Vdc Collector Current Continuous IC 2. Adc Total Device TA = 2 C Derate above 2 C PD 4.23 Storage Temperature Range Tstg to +1 C Junction Temperature TJ 2 C THERMAL CHARACTERISTICS Watts W/ C Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 4. C/W ELECTRICAL CHARACTERISTICS (TC = 2 C unless otherwise noted.) OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (IC = 2 madc, IB = ) Collector Emitter Breakdown Voltage (IC = 2 madc, VBE = ) Emitter Base Breakdown Voltage (IE =. madc, IC = ) Collector Cutoff Current (VCB = 1 Vdc, IE = ) CASE 4 4, STYLE 1 Characteristic Symbol Min Typ Max Unit V(BR)CEO Vdc V(BR)CES 3 Vdc V(BR)EBO 4. Vdc ICBO 1. madc (continued) REV MOTOROLA Motorola, Inc RF DEVICE DATA MRF228 1

2 ELECTRICAL CHARACTERISTICS continued (TC = 2 C unless otherwise noted.) ON CHARACTERISTICS DC Current Gain (IC = madc, VCE =. Vdc) Characteristic Symbol Min Typ Max Unit hfe DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 1 Vdc, IE =, f = 1. MHz) FUNCTIONAL TESTS (Figure 1) Common Emitter Amplifier Power Gain (VCC =. Vdc, Pout = 1 W, f = 17 MHz) Collector Efficiency (VCC =. Vdc, Pout = 1 W, f = 17 MHz) Cob 33 pf Gpe 13 db η 8 % Load Mismatch (VCC = 1. Vdc, Pin = 2. db Overdrive, Load VSWR = 3:1) ψ No Degradation in Output Power C11 RFC2 + R3 C C13 +. V L7 R2 C1 RFC1 R1 L1 L2 C2 C3 C4 C L3 L4 L L C1 D.U.T. C C7 C8 C9 C1, C1, C11 1 pf Ceramic Chip Capacitor C2 27 pf Mini Unelco Capacitor C3 33 pf Mini Unelco Capacitor C4, C 27 pf Unelco J11 Capacitor C, C9 pf Mini Unelco Capacitor C7 91 pf Mini Unelco Capacitor C8 8 pf Mini Unelco Capacitor C.1 µf Monolythic Capacitor C13 1 µf, 1 V Electrolytic L1 3 Turns # AWG, 3/1 ID L2 1 1/8 # AWG into 1/2 High Loop L3 Copper Pad,.2 x.4 x. L4 1/4 # AWG into 1/8 High Loop L 3 Turns # AWG Enameled, 3/32 ID L Turns # AWG Enameled, 3/32 ID L7 1 3/4 #1 AWG into 3/4 High Loop R1 Ω, 1/2 W Carbon R2 1 Ω, 1. W Carbon R3 1 Ω, 1. W Carbon RFC1.1 µh Molded Choke RFC2 Ferroxcube Choke, VK2 4B Figure 1. Broadband Circuit MRF228 2

3 VCC =. V.8 W. W.4 W f = 13 MHz VCC =. V 1 MHz 17 MHz 22 MHz f, FREQUENCY (MHz) Pin, INPUT POWER (WATTS) Figure 2. Output Power versus Frequency Figure 3. Output Power versus Input Power W. W.2 W.7 W. W.2 W f = 22 MHz f = 17 MHz Figure 4. Output Power versus Supply Voltage Figure. Output Power versus Supply Voltage W. W W f = 1 MHz.7 W. W.2 W f = 13 MHz Figure. Output Power versus Supply Voltage Figure 7. Output Power versus Supply Voltage MRF228 3

4 1 14 GPE 8 GPE, POWER GAIN (db) ηc INPUT VSWR 1: f, FREQUENCY (MHz) Pin =.7 W VCC =. V 1.:1 1.2:1 7 η c, COLLECTOR EFFICIENCY Figure 8. Typical Performance in a Broadband Circuit Zin f = 13 MHz Zo = 1 Ω f = 13 MHz f MHz ZOL* VCC =. V, Pout = 1 W Zin Ohms.9 j.8.8 j.1.9 j j.39 ZOL* Ohms.7 j j j3.4.2 j2.4 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. Figure 9. Series Equivalent Impedance MRF228 4

5 PACKAGE DIMENSIONS 3 T F P 8 32 NC 2A WRENCH FLAT 2 4 A 1 D K M J SEATING PLANE U E B S C MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D E G 1.2. J K M 4 NOM 4 NOM P S T U STYLE 1: PIN 1. EMITTER 2. BASE 3. EMITTER 4. COLLECTOR CASE 4 4 ISSUE J MRF228

6 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 29; Phoenix, Arizona 83. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 BP, England. JAPAN: Nippon Motorola Ltd.; , Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF228 MOTOROLA RF DEVICE MRF228/D DATA

P D 215 1.25 Operating Junction Temperature T J 200 C Storage Temperature Range T stg 65 to +150 C

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