# NSI45060JDT4G. Adjustable Constant Current Regulator & LED Driver. 45 V, ma 15%, 2.7 W Package

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4 NSI5JDTG POWER DISSIPATION () mm 2 /2 oz mm 2 /2 oz mm 2 /2 oz mm 2 / oz mm 2 / oz 9 3 mm 2 / oz T A, AMBIENT TEMPERATURE ( C) Figure 7. Power Dissipation vs. Ambient T J = 5 C 2 APPLICATIONS D D Anode Q Q2 Qx Anode Q Q2 Qx Cathode R adj R adj R adj Cathode R adj R adj R adj + V in + V in Figure 8. Typical Application Circuit (3 ma each String) Number of s that can be connected is determined by: D is a reverse battery protection diode s = ((V in Q X V F D V F )/ V F ) Example: V in = 2 Vdc, Q X V F = 3.5 Vdc, DVF =.7 V V F = ma (2 Vdc.2 Vdc)/2.2 Vdc = 3 s in series. Figure 9. Typical Application Circuit (9 ma each String) Number of s that can be connected is determined by: D is a reverse battery protection diode Example: V in = 2 Vdc, Q X V F = 3.5 Vdc, DVF =.7 V V F = ma (2 Vdc ( Vdc))/2.6 Vdc = 3 s in series. Number of Drivers = current/3 ma 9 ma/3 ma = 3 Drivers (Q, Q2, Q3)

5 NSI5JDTG Comparison of Circuit using CCR vs. Resistor Biasing ON Semiconductor CCR Design Constant brightness over full Supply Voltage (more efficient), see Figure Little variation of power in s, see Figure Constant current extends strings lifetime, see Figure Current decreases as voltage increases, see Figure Current supplied to string decreases as temperature increases (self-limiting), see Figure 2 Single resistor is used for current select Fewer components, less board space required Surface mount component Resistor Biased Design Large variations in brightness over full Automotive Supply Voltage Large variations of current (power) in s High Supply Voltage/ Higher Current in strings limits lifetime Current increases as voltage increases current decreases as temperature increases Requires costly inventory (need for several resistor values to match intensity) More components, more board space required Through-hole components I (ma) Circuit Current with CCR Device Circuit Current with 25 2 Representative Test Data for Figure 8 Circuit, Current of s, 3 mm 2, 2 oz Copper Area Pd s () Power with CCR Device Power with 25 2 Representative Test Data for Figure 8 Circuit, Pd of s, 3 mm 2, 2 oz Copper Area V in (V) V in (V) Figure. Series Circuit Current Figure. Power Current Regulation: Pulse Mode (I reg(p) ) vs DC Steady-State (I reg(ss) ) There are two methods to measure current regulation: Pulse mode (I reg(p) ) testing is applicable for factory and incoming inspection of a CCR where test times are a minimum. (t < 3 s). DC Steady-State (I reg(ss) ) testing is applicable for application verification where the CCR will be operational for seconds, minutes, or even hours. ON Semiconductor has correlated the difference in I reg(p) to I reg(ss) for stated board material, size, copper area and copper thickness. I reg(p) will always be greater than I reg(ss) due to the die temperature rising during I reg(ss). This heating effect can be minimized during circuit design with the correct selection of board material, metal trace size and weight, for the operating current, voltage, board operating temperature (T A ) and package. (Refer to Thermal Characteristics table). 5

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