NSI45060JDT4G. Adjustable Constant Current Regulator & LED Driver. 45 V, ma 15%, 2.7 W Package

Save this PDF as:
 WORD  PNG  TXT  JPG

Size: px
Start display at page:

Download "NSI45060JDT4G. Adjustable Constant Current Regulator & LED Driver. 45 V, 60 100 ma 15%, 2.7 W Package"

Transcription

1 NSI5JDTG Adjustable Constant Current Regulator & Driver 5 V, ma 5%, 2.7 W Package The adjustable constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost effective solution for regulating current in s. The CCR is based on patent-pending Self-Biased Transistor (SBT) technology and regulates current over a wide voltage range. It is designed with a negative temperature coefficient to protect s from thermal runaway at extreme voltages and currents. The CCR turns on immediately and is at 2% of regulation with only.5 V Vak. The R adj pin allows I reg(ss) to be adjusted to higher currents by attaching a resistor between R adj (Pin 3) and the Cathode (Pin ). The R adj pin can also be left open (No Connect) if no adjustment is required. It requires no external components allowing it to be designed as a high or low side regulator. The high anodecathode voltage rating withstands surges common in Automotive, Industrial and Commercial Signage applications. This device is available in a thermally robust package and is qualified to stringent AEC Q standard, which is lead-free RoHS compliant and uses halogen-free molding compound. Features Robust Power Package: 2.7 Watts Adjustable up to ma Wide Operating Voltage Range Immediate Turn-On Voltage Surge Suppressing Protecting s AEC-Q Qualified SBT (Self Biased Transistor) Technology Negative Temperature Coefficient Eliminates Additional Regulation These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant Applications Automobile: Chevron Side Mirror Markers, Cluster, Display & Instrument Backlighting, CHMSL, Map Light AC Lighting Panels, Display Signage, Decorative Lighting, Channel Lettering Switch Contact Wetting Application Note AND839/D Power Dissipation Considerations Application Note AND839/D Automotive CHMSL 2 3 DPAK CASE 369C MARKING DIAGRAM ORDERING INFORMATION Device Package Shipping NSI5JDTG I reg(ss) = Vak = 7.5 V A R adj Anode Cathode YWW NSI JG DPAK (Pb Free) 3 R adj Y = Year WW = Work Week NSIJ = Specific Device Code G = Pb Free Package 25/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. C Semiconductor Components Industries, LLC, 2 August, 2 Rev. Publication Order Number: NSI5JD/D

2 NSI5JDTG MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol Value Unit Anode Cathode Voltage Vak Max 5 V Reverse Voltage V R 5 mv Operating and Storage Junction Temperature Range T J, T stg 55 to +5 C ESD Rating: Human Body Model Machine Model ESD Class 3A ( V) Class B (2 V) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit Steady State Vak = 7.5 V (Note ) I reg(ss) 5 69 ma Voltage Overhead (Note 2) V overhead.8 V Pulse Vak = 7.5 V (Note 3) I reg(p) ma Vak = 7.5 V (Note ) C 7 pf Vak = V (Note ) C 7 pf. I reg(ss) steady state is the voltage (Vak) applied for a time duration 8 sec, using 3 mm 2 2 oz. Copper traces, in still air. 2. V overhead = V in V s. V overhead is typical value for 65% I reg(ss). 3. I reg(p) non repetitive pulse test. Pulse width t msec.. f = MHz,.2 V RMS. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation (Note 5) P D 77.6 Thermal Resistance, Junction to Ambient (Note 5) R θja 7.6 C/W Thermal Reference, Junction to Lead (Note 5) RψJL 6.8 C/W Total Device Dissipation (Note 6) P D Thermal Resistance, Junction to Ambient (Note 6) R θja C/W Thermal Reference, Junction to Lead (Note 6) RψJL 6.3 C/W Total Device Dissipation (Note 7) P D Thermal Resistance, Junction to Ambient (Note 7) R θja. C/W Thermal Reference, Junction to Lead (Note 7) RψJL 6.5 C/W Total Device Dissipation (Note 8) P D Thermal Resistance, Junction to Ambient (Note 8) R θja 5.2 C/W Thermal Reference, Junction to Lead (Note 8) RψJL 5.9 C/W Total Device Dissipation (Note 9) P D Thermal Resistance, Junction to Ambient (Note 9) R θja 5. C/W Thermal Reference, Junction to Lead (Note 9) RψJL 6.2 C/W Total Device Dissipation (Note ) P D Thermal Resistance, Junction to Ambient (Note ) R θja 6. C/W Thermal Reference, Junction to Lead (Note ) RψJL 5.7 C/W Junction and Storage Temperature Range T J, T stg 55 to +5 C NOTE: Lead measurements are made by non contact methods such as IR with treated surface to increase emissivity to.9. Lead temperature measurement by attaching a T/C may yield values as high as 3% higher C/W values based upon empirical measurements and method of attachment mm 2, oz. copper traces, still air mm 2, 2 oz. copper traces, still air mm 2, oz. copper traces, still air mm 2, 2 oz. copper traces, still air mm 2, oz. copper traces, still 7 mm 2, 2 oz. copper traces, still air. 2

3 NSI5JDTG TYPICAL PERFORMANCE CURVES Minimum 3 mm 2, 2 oz Copper Trace, Still Air I reg, CURRENT REGULATION (ma) I reg(p), PULSE CURRENT (ma) , R adj = Open Vak, ANODE CATHODE VOLTAGE (V) Figure. General Performance Curve for CCR Vak, ANODE CATHODE VOLTAGE (V) Figure 3. Pulse Current (I reg(p) ) vs. Anode Cathode Voltage (Vak) 5 R adj = Open Non Repetitive Pulse Test I reg(ss), STEADY STATE CURRENT (ma) I reg(ss), STEADY STATE CURRENT (ma) T A = C T A = 85 C T A = 25 C DC Test Steady State, Still Air, R adj = Open Vak, ANODE CATHODE VOLTAGE (V) Figure 2. Steady State Current (I reg(ss) ) vs. Anode Cathode Voltage (Vak) 7.5 V R adj = Open I reg(p), PULSE CURRENT (ma).79 ma/ C Vak = 7.5 V.6 ma/ C Vak = 7.5 V.3 ma/ C Vak = 7.5 V Figure. Steady State Current vs. Pulse Current Testing I reg, CURRENT REGULATION (ma) V R adj = Open 8 9 I reg(ss), STEADY STATE CURRENT (ma) V TIME (s) R adj ( ), Max Power 25 Figure 5. Current Regulation vs. Time Figure 6. I reg(ss) vs. R adj 3

4 NSI5JDTG POWER DISSIPATION () mm 2 /2 oz mm 2 /2 oz mm 2 /2 oz mm 2 / oz mm 2 / oz 9 3 mm 2 / oz T A, AMBIENT TEMPERATURE ( C) Figure 7. Power Dissipation vs. Ambient T J = 5 C 2 APPLICATIONS D D Anode Q Q2 Qx Anode Q Q2 Qx Cathode R adj R adj R adj Cathode R adj R adj R adj + V in + V in Figure 8. Typical Application Circuit (3 ma each String) Number of s that can be connected is determined by: D is a reverse battery protection diode s = ((V in Q X V F D V F )/ V F ) Example: V in = 2 Vdc, Q X V F = 3.5 Vdc, DVF =.7 V V F = ma (2 Vdc.2 Vdc)/2.2 Vdc = 3 s in series. Figure 9. Typical Application Circuit (9 ma each String) Number of s that can be connected is determined by: D is a reverse battery protection diode Example: V in = 2 Vdc, Q X V F = 3.5 Vdc, DVF =.7 V V F = ma (2 Vdc ( Vdc))/2.6 Vdc = 3 s in series. Number of Drivers = current/3 ma 9 ma/3 ma = 3 Drivers (Q, Q2, Q3)

5 NSI5JDTG Comparison of Circuit using CCR vs. Resistor Biasing ON Semiconductor CCR Design Constant brightness over full Supply Voltage (more efficient), see Figure Little variation of power in s, see Figure Constant current extends strings lifetime, see Figure Current decreases as voltage increases, see Figure Current supplied to string decreases as temperature increases (self-limiting), see Figure 2 Single resistor is used for current select Fewer components, less board space required Surface mount component Resistor Biased Design Large variations in brightness over full Automotive Supply Voltage Large variations of current (power) in s High Supply Voltage/ Higher Current in strings limits lifetime Current increases as voltage increases current decreases as temperature increases Requires costly inventory (need for several resistor values to match intensity) More components, more board space required Through-hole components I (ma) Circuit Current with CCR Device Circuit Current with 25 2 Representative Test Data for Figure 8 Circuit, Current of s, 3 mm 2, 2 oz Copper Area Pd s () Power with CCR Device Power with 25 2 Representative Test Data for Figure 8 Circuit, Pd of s, 3 mm 2, 2 oz Copper Area V in (V) V in (V) Figure. Series Circuit Current Figure. Power Current Regulation: Pulse Mode (I reg(p) ) vs DC Steady-State (I reg(ss) ) There are two methods to measure current regulation: Pulse mode (I reg(p) ) testing is applicable for factory and incoming inspection of a CCR where test times are a minimum. (t < 3 s). DC Steady-State (I reg(ss) ) testing is applicable for application verification where the CCR will be operational for seconds, minutes, or even hours. ON Semiconductor has correlated the difference in I reg(p) to I reg(ss) for stated board material, size, copper area and copper thickness. I reg(p) will always be greater than I reg(ss) due to the die temperature rising during I reg(ss). This heating effect can be minimized during circuit design with the correct selection of board material, metal trace size and weight, for the operating current, voltage, board operating temperature (T A ) and package. (Refer to Thermal Characteristics table). 5

6 NSI5JDTG PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE C V S F B R 2 3 G L A K D 2 PL J H C.3 (.5) M T T SEATING PLANE E U Z NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G.8 BSC.58 BSC H J K L.9 BSC 2.29 BSC R S U.2.5 V Z RECOMMENDED FOOTPRINT SCALE 3: mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NSI5JD/D

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features NTMS9N Power MOSFET 3 V, 7 A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices

More information

ESD7484. 4-Line Ultra-Large Bandwidth ESD Protection

ESD7484. 4-Line Ultra-Large Bandwidth ESD Protection 4-Line Ultra-Large Bandwidth ESD Protection Functional Description The ESD7484 chip is a monolithic, application specific discrete device dedicated to ESD protection of the HDMI connection. It also offers

More information

AND8433/D. Using ON Semiconductor Constant Current Regulator (CCR) Devices in AC Applications APPLICATION NOTE

AND8433/D. Using ON Semiconductor Constant Current Regulator (CCR) Devices in AC Applications APPLICATION NOTE Using ON Semiconductor Constant Current Regulator (CCR) Devices in AC Applications Introduction This update includes additional information on 220 V ac lighting circuits with the addition of ON Semiconductors

More information

LC03-6R2G. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces. SO-8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 2 kw PEAK POWER 6 VOLTS

LC03-6R2G. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces. SO-8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 2 kw PEAK POWER 6 VOLTS Low Capacitance Surface Mount TVS for High-Speed Data terfaces The LC3- transient voltage suppressor is designed to protect equipment attached to high speed communication lines from ESD, EFT, and lighting.

More information

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS N393, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 4 Vdc CollectorBase Voltage V CBO 6 Vdc EmitterBase

More information

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS 2N396 General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V

More information

NUP4106. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces SO 8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 500 WATTS PEAK POWER 3.

NUP4106. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces SO 8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 500 WATTS PEAK POWER 3. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces The NUP0 transient voltage suppressor is designed to protect equipment attached to high speed communication lines from ESD and lightning.

More information

MC10SX1190. Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit

MC10SX1190. Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit Description The MC10SX1190 is a differential receiver, differential transmitter specifically designed to drive coaxial cables. It incorporates

More information

LOW POWER SCHOTTKY. http://onsemi.com GUARANTEED OPERATING RANGES ORDERING INFORMATION

LOW POWER SCHOTTKY. http://onsemi.com GUARANTEED OPERATING RANGES ORDERING INFORMATION The TTL/MSI SN74LS151 is a high speed 8-input Digital Multiplexer. It provides, in one package, the ability to select one bit of data from up to eight sources. The LS151 can be used as a universal function

More information

SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS

SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS 1N5817 and 1N5819 are Preferred Devices... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features chrome barrier metal, epitaxial construction

More information

MTD3055VT4. http://onsemi.com. MAXIMUM RATINGS (T C = 25 C unless otherwise noted) MARKING DIAGRAMS ORDERING INFORMATION. R DS(on) TYP 60 V 100 m

MTD3055VT4. http://onsemi.com. MAXIMUM RATINGS (T C = 25 C unless otherwise noted) MARKING DIAGRAMS ORDERING INFORMATION. R DS(on) TYP 60 V 100 m MTD55V Preferred Device Power MOSFET Amps, 6 Volts NChannel This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching

More information

NCV8184. Micropower 70 ma Low Dropout Tracking Regulator/Line Driver

NCV8184. Micropower 70 ma Low Dropout Tracking Regulator/Line Driver Micropower 7 ma Low Dropout Tracking Regulator/Line Driver The NCV884 is a monolithic integrated low dropout tracking voltage regulator designed to provide an adjustable buffered output voltage that closely

More information

AND8365/D. 125 kbps with AMIS-4168x APPLICATION NOTE

AND8365/D. 125 kbps with AMIS-4168x APPLICATION NOTE 125 kbps with AMIS-4168x Introduction Question Is it possible to drive 125kB with the AMIS 41682? Please consider all possible CAN bit timings (TSEG1, TSEG2, SJW), a capacitive load at each can pin about

More information

ULN2803A ULN2804A OCTAL PERIPHERAL DRIVER ARRAYS

ULN2803A ULN2804A OCTAL PERIPHERAL DRIVER ARRAYS Order this document by ULN283/D The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry (such as TTL, CMOS or

More information

High Performance Schottky Rectifier, 1 A

High Performance Schottky Rectifier, 1 A High Performance Schottky Rectifier, A VS-MQNPbF Cathode Anode DO-24AC (SMA) PRODUCT SUMMARY Package DO-24AC (SMA) I F(AV) A V R V V F at I F.78 V I RM ma at 25 C T J max. 5 C Diode variation Single die

More information

NCP1090GEVB, NCP1094GEVB. Power-over-Ethernet PD Interface Evaluation Board User's Manual EVAL BOARD USER S MANUAL. http://onsemi.

NCP1090GEVB, NCP1094GEVB. Power-over-Ethernet PD Interface Evaluation Board User's Manual EVAL BOARD USER S MANUAL. http://onsemi. NCP1090GEVB, NCP1094GEVB Power-over-Ethernet PD Interface Evaluation Board User's Manual Introduction The NCP1090GEVB and NCP1094GEVB evaluation boards are designed to showcase the features of the NCP109x

More information

P D 215 1.25 Operating Junction Temperature T J 200 C Storage Temperature Range T stg 65 to +150 C

P D 215 1.25 Operating Junction Temperature T J 200 C Storage Temperature Range T stg 65 to +150 C SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold

More information

NCP707. 200 ma, Very-Low Quiescent Current, I Q 25 A, Low Noise, Low Dropout Regulator

NCP707. 200 ma, Very-Low Quiescent Current, I Q 25 A, Low Noise, Low Dropout Regulator NCP77 2 ma, Very-Low Quiescent Current, I Q 25 A, Low Noise, Low Dropout Regulator The NCP77 is 2 ma LDO that provides the engineer with a very stable, accurate voltage with very low noise suitable for

More information

(250 Volts Peak) SEMICONDUCTOR TECHNICAL DATA

(250 Volts Peak) SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MOC00/D (0 Volts Peak) The MOC00 Series consists of gallium arsenide infrared emitting diodes, optically coupled to silicon bilateral switch and are

More information

Schottky Rectifier, 100 A

Schottky Rectifier, 100 A Schottky Rectifier, A VS-BGQ Cathode Anode PowerTab PRODUCT SUMMARY Package PowerTab I F(AV) A V R V V F at I F 0.82 V I RM 180 ma at 125 C T J max. 175 C Diode variation Single die E AS 9 mj FEATURES

More information

AND8336. Design Examples of On Board Dual Supply Voltage Logic Translators. Prepared by: Jim Lepkowski ON Semiconductor. http://onsemi.

AND8336. Design Examples of On Board Dual Supply Voltage Logic Translators. Prepared by: Jim Lepkowski ON Semiconductor. http://onsemi. Design Examples of On Board Dual Supply Voltage Logic Translators Prepared by: Jim Lepkowski ON Semiconductor Introduction Logic translators can be used to connect ICs together that are located on the

More information

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC Rev. 8 18 November 2010 Product data sheet 1. Product profile 1.1 General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package

More information

CM1402. SIM Card EMI Filter Array with ESD Protection

CM1402. SIM Card EMI Filter Array with ESD Protection SIM ard EMI Filter Array with ESD Protection Product Description The M1402 is an EMI filter array with ESD protection, which integrates three pi filters ( R ) and two additional channels of ESD protection.

More information

(250 Volts Peak) SEMICONDUCTOR TECHNICAL DATA

(250 Volts Peak) SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MOC0/D (20 Volts Peak) The MOC0, MOC02 and MOC0 devices consist of gallium arsenide infrared emitting diodes optically coupled to a monolithic silicon

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low

More information

DDSL01. Secondary protection for DSL lines. Features. Description

DDSL01. Secondary protection for DSL lines. Features. Description Secondary protection for DSL lines Features Stand off voltage: 30 V Surge capability: I pp = 30 A 8/20 µs Low capacitance device: 4.5 pf at 2 V RoHS package Low leakage current: 0.5 µa at 25 C 3 2 Description

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MPX5050/D The MPX5050 series piezoresistive transducer is a state of the art monolithic silicon pressure sensor designed for a wide range of applications,

More information

LM134-LM234-LM334. Three terminal adjustable current sources. Features. Description

LM134-LM234-LM334. Three terminal adjustable current sources. Features. Description Three terminal adjustable current sources Features Operates from 1V to 40V 0.02%/V current regulation Programmable from 1µA to 10mA ±3% initial accuracy Description The LM134/LM234/LM334 are 3-terminal

More information

EVERSPIN s New 2mm Exposed Pad DFN Package Meets Both SOIC-8 and DFN8 PCB Layouts

EVERSPIN s New 2mm Exposed Pad DFN Package Meets Both SOIC-8 and DFN8 PCB Layouts EVERSPIN s New 2mm Exposed Pad DFN Package Meets Both SOIC-8 and DFN8 PCB Layouts This Application Note is to inform Everspin customers that a new, DFN8 package with a 2mm bottom exposed pad has been added

More information

Table 1. Absolute maximum ratings (T amb = 25 C) Symbol Parameter Value Unit. ISO 10605 - C = 330 pf, R = 330 Ω : Contact discharge Air discharge

Table 1. Absolute maximum ratings (T amb = 25 C) Symbol Parameter Value Unit. ISO 10605 - C = 330 pf, R = 330 Ω : Contact discharge Air discharge Automotive dual-line Transil, transient voltage suppressor (TVS) for CAN bus Datasheet - production data Complies with the following standards ISO 10605 - C = 150 pf, R = 330 Ω : 30 kv (air discharge)

More information

Surface Mount Schottky Barrier

Surface Mount Schottky Barrier FEATURES - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level, per J-STD-020 - Compliant to RoHS Directive

More information

ULN2801A, ULN2802A, ULN2803A, ULN2804A

ULN2801A, ULN2802A, ULN2803A, ULN2804A ULN2801A, ULN2802A, ULN2803A, ULN2804A Eight Darlington array Datasheet production data Features Eight Darlington transistors with common emitters Output current to 500 ma Output voltage to 50 V Integral

More information

NOM02A4-AG01G. 200DPI Contact Image Sensor Module

NOM02A4-AG01G. 200DPI Contact Image Sensor Module NOM02A4-AG01G 200DPI Contact Image Sensor Module Description The NOM02A4 AG01G contact image sensor (CIS) module integrates a green LED light source, lens and image sensor in a compact housing. The module

More information

LM1084 5A Low Dropout Positive Regulators

LM1084 5A Low Dropout Positive Regulators 5A Low Dropout Positive Regulators General Description The LM1084 is a series of low dropout voltage positive regulators with a maximum dropout of 1.5 at 5A of load current. It has the same pin-out as

More information

ETP01-xx21. Protection for Ethernet lines. Features. Description. Applications. Benefits. Complies with the following standards

ETP01-xx21. Protection for Ethernet lines. Features. Description. Applications. Benefits. Complies with the following standards ETP0-xx2 Protection for Ethernet lines Features Differential and common mode protection Telcordia GR089 Intrabuilding: 50 A, 2/0 µs ITU-T K20/2: 40 A, 5/30 µs Low capacitance: 3 pf max at 0 V UL94 V0 approved

More information

TYPICAL APPLICATION CIRCUIT. ORDER INFORMATION SOP-EP 8 pin A703EFT (Lead Free) A703EGT (Green)

TYPICAL APPLICATION CIRCUIT. ORDER INFORMATION SOP-EP 8 pin A703EFT (Lead Free) A703EGT (Green) www.addmtek.com 2 CHANNELS 150mA HIGH VOLTAGE ADJUSTABLE CURRENT REGULATOR DESCRIPTION A703 is a high voltage, adjustable constant current driver for LED applications. Two regulated current ports are designed

More information

CAT4026. 6-Channel LED Controller with Fault Diagnostics for Large Panel LED Backlighting

CAT4026. 6-Channel LED Controller with Fault Diagnostics for Large Panel LED Backlighting 6-Channel LED Controller with Fault Diagnostics for Large Panel LED Backlighting Description The CAT426 is a high performance, large panel LED controller designed to control six constant current high voltage

More information

BAS16 series. 1. Product profile. High-speed switching diodes. 1.1 General description. 1.2 Features and benefits. 1.

BAS16 series. 1. Product profile. High-speed switching diodes. 1.1 General description. 1.2 Features and benefits. 1. Rev. 6 4 September 04 Product data sheet. Product profile. General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number Package Configuration

More information

AAT4280 Slew Rate Controlled Load Switch

AAT4280 Slew Rate Controlled Load Switch General Description Features SmartSwitch The AAT4280 SmartSwitch is a P-channel MOSFET power switch designed for high-side load switching applications. The P-channel MOSFET device has a typical R DS(ON)

More information

Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 95 A

Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 95 A Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 95 A 95PF(R)... DO-203AB (DO-5) PRODUCT SUMMARY I F(AV) Package Circuit configuration 95PF(R)...W DO-203AB (DO-5) 95 A DO-203AB (DO-5) Single

More information

SC728/SC729. 2A Low Vin, Very Low Ron Load Switch. POWER MANAGEMENT Features. Description. Applications. Typical Application Circuit SC728 / SC729

SC728/SC729. 2A Low Vin, Very Low Ron Load Switch. POWER MANAGEMENT Features. Description. Applications. Typical Application Circuit SC728 / SC729 POWER MANAGEMT Features Input Voltage Range 1.1V to 2A Continuous Output Current Ultra-Low Ron 36mΩ Automatic Output Discharge Circuit Fast Turn-on Option With No Output Discharge Circuit SC728 Extended

More information

PHOTOTRANSISTOR OPTOCOUPLERS

PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2E MCT20 MCT27 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MCT2XXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor

More information

www.jameco.com 1-800-831-4242

www.jameco.com 1-800-831-4242 Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. LF411 Low Offset, Low Drift JFET Input Operational Amplifier General Description

More information

IRLR8729PbF IRLU8729PbF

IRLR8729PbF IRLU8729PbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits

More information

L78MxxAB L78MxxAC. Precision 500 ma regulators. Features. Description

L78MxxAB L78MxxAC. Precision 500 ma regulators. Features. Description L78MxxAB L78MxxAC Precision 500 ma regulators Features Output current to 0.5 A Output voltages of 5; 6; 8; 9; 10; 12; 15; 18; 24 V Thermal overload protection Short circuit protection Output transition

More information

SSM3K335R SSM3K335R. 1. Applications. 2. Features. 3. Packaging and Pin Configuration. 2012-07-19 Rev.3.0. Silicon N-Channel MOS (U-MOS -H)

SSM3K335R SSM3K335R. 1. Applications. 2. Features. 3. Packaging and Pin Configuration. 2012-07-19 Rev.3.0. Silicon N-Channel MOS (U-MOS -H) MOSFETs Silicon N-Channel MOS (U-MOS-H) SSM3K335R SSM3K335R 1. Applications Power Management Switches DC-DC Converters 2. Features (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance : R DS(ON)

More information

DSL01-xxxSC5. Secondary protection for DSL lines. Features. Description. Applications. Benefits. Complies with the following standards

DSL01-xxxSC5. Secondary protection for DSL lines. Features. Description. Applications. Benefits. Complies with the following standards -xxxsc5 Secondary protection for DSL lines Features Low capacitance devices: -xxxsc5: Delta C typ = 3.5 pf High surge capability: 30 A - 8/20 µs Voltage: 8 V, 10.5 V, 16 V, and 24 V RoHS package Benefits

More information

Power MOSFET FEATURES. IRFSL11N50APbF SiHFSL11N50A-E3. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 30

Power MOSFET FEATURES. IRFSL11N50APbF SiHFSL11N50A-E3. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 30 Power MOFET IRFL11N50, ihfl11n50 PRODUCT UMMRY V D (V) 500 R D(on) ( ) V G = 10 V 0.55 Q g (Max.) (nc) 51 Q gs (nc) 12 Q gd (nc) 23 Configuration ingle I 2 PK (TO262) G D FETURE Dynamic dv/dt Rating Repetitive

More information

LM78XX Series Voltage Regulators

LM78XX Series Voltage Regulators LM78XX Series Voltage Regulators General Description Connection Diagrams The LM78XX series of three terminal regulators is available with several fixed output voltages making them useful in a wide range

More information

STPS40L15CW. 2 x 20 Amps SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 40Amp V R = 15V. Bulletin PD-20622 rev. B 10/06. Description/ Features

STPS40L15CW. 2 x 20 Amps SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 40Amp V R = 15V. Bulletin PD-20622 rev. B 10/06. Description/ Features Bulletin PD-20622 rev. B 0/06 STPS40L5CW SCHOTTKY RECTIFIER 2 x 20 Amps I F(AV) = 40Amp V R = 5V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 40 A waveform V RRM 5

More information

Equivalent Circuit. Operating Characteristics at Ta = 25 C, V CC = ±34V, R L = 8Ω, VG = 40dB, Rg = 600Ω, R L : non-inductive load STK4181V

Equivalent Circuit. Operating Characteristics at Ta = 25 C, V CC = ±34V, R L = 8Ω, VG = 40dB, Rg = 600Ω, R L : non-inductive load STK4181V Ordering number: 2137B Thick Film Hybrid IC STK4181V AF Power Amplifier (Split Power Supply) (45W + 45W min, THD = 0.08%) Features Pin-compatible with the STK4102II series. The STK4101V series use the

More information

Y.LIN ELECTRONICS CO.,LTD.

Y.LIN ELECTRONICS CO.,LTD. Features Current transfer ratio (CTR 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up to +110 C Compact

More information

AUIPS71411G CURRENT SENSE HIGH SIDE SWITCH

AUIPS71411G CURRENT SENSE HIGH SIDE SWITCH February, 21st 2010 Automotive grade AUIPS71411G CURRENT SENSE HIGH SIDE SWITCH Features Suitable 24V battery operation Over current shutdown Over temperature shutdown Current sensing Active clamp Low

More information

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs TSAL64 High Power Infrared Emitting Diode, 94 nm, GaAlAs/GaAs DESCRIPTION 94 8389 TSAL64 is an infrared, 94 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic

More information

Symbol Parameters Units Frequency Min. Typ. Max. 850 MHz 14.8 16.3 17.8

Symbol Parameters Units Frequency Min. Typ. Max. 850 MHz 14.8 16.3 17.8 Product Description Sirenza Microdevices SGC-689Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active-bias network. The active bias network provides

More information

NOT RECOMMENDED FOR NEW DESIGN

NOT RECOMMENDED FOR NEW DESIGN Technical Data RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 00 MHz. The high gain and

More information

STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP

STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V - 1.76 Ω - 4 A SuperMESH Power MOSFET DPAK - D 2 PAK - IPAK - I 2 PAK - TO-220 - TO-220FP Features Type V DSS R DS(on)

More information

LM386 Low Voltage Audio Power Amplifier

LM386 Low Voltage Audio Power Amplifier Low Voltage Audio Power Amplifier General Description The LM386 is a power amplifier designed for use in low voltage consumer applications. The gain is internally set to 20 to keep external part count

More information

NCP3065, NCV3065. Up to 1.5 A Constant Current Switching Regulator for LEDs

NCP3065, NCV3065. Up to 1.5 A Constant Current Switching Regulator for LEDs Up to.5 A Constant Current Switching Regulator for LEDs The NCP3065 is a monolithic switching regulator designed to deliver constant current for powering high brightness LEDs. The device has a very low

More information

AUTOMOTIVE GRADE. Base part number Package Type Standard Pack Orderable Part Number

AUTOMOTIVE GRADE. Base part number Package Type Standard Pack Orderable Part Number UTOMOTVE GRDE URG4P40S-E nsulated Gate Bipolar Transistor Features V ES = 600V Standard: Optimized for minimum saturation voltage and low operating frequencies ( < khz) Generation 4 GBT design provides

More information

LM118/LM218/LM318 Operational Amplifiers

LM118/LM218/LM318 Operational Amplifiers LM118/LM218/LM318 Operational Amplifiers General Description The LM118 series are precision high speed operational amplifiers designed for applications requiring wide bandwidth and high slew rate. They

More information

unit : mm With heat sink (see Pd Ta characteristics)

unit : mm With heat sink (see Pd Ta characteristics) Ordering number: EN1321E Monolithic Linear IC LA4261 3.5 W 2-Channel AF Power Amplifier for Home Stereos and Music Centers Features. Minimum number of external parts required (No input capacitor, bootstrap

More information

Description. Table 1. Device summary. Order codes. TO-220 (single gauge) TO-220 (double gauge) D²PAK (tape and reel) TO-220FP

Description. Table 1. Device summary. Order codes. TO-220 (single gauge) TO-220 (double gauge) D²PAK (tape and reel) TO-220FP 1.2 V to 37 V adjustable voltage regulators Description Datasheet - production data TO-220 TO-220FP The LM217, LM317 are monolithic integrated circuits in TO-220, TO-220FP and D²PAK packages intended for

More information

Hardware Documentation. Data Sheet HAL 202. Hall-Effect Sensor. Edition Sept. 18, 2014 DSH000159_002EN

Hardware Documentation. Data Sheet HAL 202. Hall-Effect Sensor. Edition Sept. 18, 2014 DSH000159_002EN Hardware Documentation Data Sheet HAL 202 Hall-Effect Sensor Edition Sept. 18, 2014 DSH000159_002EN HAL202 Copyright, Warranty, and Limitation of Liability The information and data contained in this document

More information

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection CNY7 Optocoupler, Phototransistor FEATURES Isolation test voltage 5 V RMS A 6 B Long term stability i79 C NC 5 C E Industry standard dual-in-line package Lead (Pb-free component Component in accordance

More information

RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs Freescale Semiconductor Technical Data RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs These 90 W RF power LDMOS transistors are designed for wideband RF power amplifiers covering the frequency

More information

1W High Power Purple LED Technical Data Sheet. Part No.: LL-HP60MUVA

1W High Power Purple LED Technical Data Sheet. Part No.: LL-HP60MUVA 1W High Power Purple LED Technical Data Sheet Part No.: LL-HP60MUVA Spec No.: HP60M Rev No.: V.2 Date: Aug./18/2009 Page: 1 OF 8 Features: Luckylight High power LED type. Lead frame type package (Heat

More information

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET

More information

DUAL/QUAD LOW NOISE OPERATIONAL AMPLIFIERS

DUAL/QUAD LOW NOISE OPERATIONAL AMPLIFIERS Order this document by MC3378/D The MC3378/9 series is a family of high quality monolithic amplifiers employing Bipolar technology with innovative high performance concepts for quality audio and data signal

More information

TSM020N03PQ56 30V N-Channel MOSFET

TSM020N03PQ56 30V N-Channel MOSFET PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value Unit V DS 30 V R DS(on) (max) V GS = 10V 2 V GS = 4.5V 3 mω Q

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BT151 series C Thyristors

DISCRETE SEMICONDUCTORS DATA SHEET. BT151 series C Thyristors DISCRETE SEMICONDUCTORS DATA SHEET Product specification April 24 Product specification GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT

More information

Dual P-Channel 2.5 V (G-S) MOSFET

Dual P-Channel 2.5 V (G-S) MOSFET Si593DC Dual P-Channel.5 V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).55 at V GS = -.5 V ±.9 -.8 at V GS = - 3.6 V ±.7.6 at V GS = -.5 V ±. FEATURES Halogen-free According to IEC 69-- Definition

More information

1 TO 4 CLOCK BUFFER ICS551. Description. Features. Block Diagram DATASHEET

1 TO 4 CLOCK BUFFER ICS551. Description. Features. Block Diagram DATASHEET DATASHEET 1 TO 4 CLOCK BUFFER ICS551 Description The ICS551 is a low cost, high-speed single input to four output clock buffer. Part of IDT s ClockBlocks TM family, this is our lowest cost, small clock

More information

CD4511BM CD4511BC BCD-to-7 Segment Latch Decoder Driver

CD4511BM CD4511BC BCD-to-7 Segment Latch Decoder Driver CD4511BM CD4511BC BCD-to-7 Segment Latch Decoder Driver General Description The CD4511BM CD4511BC BCD-to-seven segment latch decoder driver is constructed with complementary MOS (CMOS) enhancement mode

More information

STTH3R02QRL. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes DO-15 STTH3R02Q DO-201AD STTH3R02

STTH3R02QRL. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes DO-15 STTH3R02Q DO-201AD STTH3R02 Ultrafast recovery diode Main product characteristics I F(V) 3 V RRM 2 V T j (max) V F (typ) 175 C.7 V K t rr (typ) 16 ns Features and benefits Very low conduction losses Negligible switching losses K

More information

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 TPC811 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC811 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due

More information

Features Benefits Description TO-247AC (Modified) Absolute Maximum Ratings Parameter Max Units

Features Benefits Description TO-247AC (Modified) Absolute Maximum Ratings Parameter Max Units Bulletin PD -.338 rev. B /4 HEXFRED TM HFA5PB6 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced

More information

NOT RECOMMENDED FOR NEW DESIGN

NOT RECOMMENDED FOR NEW DESIGN Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 00 MHz. The high gain and

More information

AND8451/D. Power Stage Design Guidelines for the NCL30000 Single Stage CrM Flyback LED Driver APPLICATION NOTE

AND8451/D. Power Stage Design Guidelines for the NCL30000 Single Stage CrM Flyback LED Driver APPLICATION NOTE AND8/D Power Stage Design Guidelines for the NCL0000 Single Stage CrM Flyback LED Driver Introduction Single stage critical conduction mode (CrM) flyback converters require different design considerations

More information

Pulse Proof Thick Film Chip Resistors

Pulse Proof Thick Film Chip Resistors Pulse Proof Thick Film Chip Resistors FEATURES High pulse performance, up to kw Stability R/R 1 % for h at 70 C AEC-Q200 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

More information

N-Channel 20-V (D-S) 175 C MOSFET

N-Channel 20-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUD7N-4P PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.37 @ V GS = V 37.6 @ V GS = 4.5 V 9 TO-5 D FEATURES TrenchFET Power MOSFET 75 C Junction Temperature PWM Optimized for

More information

AN2703 Application note

AN2703 Application note Application note list for SCRs, TRIACs, AC switches, and DIACS Introduction All datasheet parameters are rated as minimum or maximum values, corresponding to the product parameter distribution. In each

More information

Lower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)

Lower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W) PD -97428 IRFH5020PbF HEXFET Power MOSFET V DS 200 V 55 m: R DS(on) max (@V GS = V) Q g (typical) 36 nc R G (typical).9 : I D (@T c(bottom) = 25 C) 43 A PQFN 5X6 mm Applications Secondary Side Synchronous

More information

Local Interconnect Network (LIN) Physical Interface

Local Interconnect Network (LIN) Physical Interface Freescale Semiconductor Engineering Bulletin EB215 Rev. 1.0, 03/2005 Local Interconnect Network (LIN) Physical Interface Difference Between MC33399 and MC33661 Introduction This engineering bulletin highlights

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Vertical deflection booster for 3 App TV/monitor applications with 0 V flyback generator Features Figure. Heptawatt package Power amplifier Flyback generator Stand-by control Output current up to 3.0 App

More information

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION TO-263 TO-25 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast

More information

LM380 Audio Power Amplifier

LM380 Audio Power Amplifier LM380 Audio Power Amplifier General Description The LM380 is a power audio amplifier for consumer application In order to hold system cost to a minimum gain is internally fixed at 34 db A unique input

More information

MM54C150 MM74C150 16-Line to 1-Line Multiplexer

MM54C150 MM74C150 16-Line to 1-Line Multiplexer MM54C150 MM74C150 16-Line to 1-Line Multiplexer MM72C19 MM82C19 TRI-STATE 16-Line to 1-Line Multiplexer General Description The MM54C150 MM74C150 and MM72C19 MM82C19 multiplex 16 digital lines to 1 output

More information

Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20

Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 10 V 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel

More information

STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET

STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STB80NF55-08/-1 STP80NF55-08 55 V 55 V

More information

INTEGRATED CIRCUITS DATA SHEET. TBA120U Sound I.F. amplifier/demodulator for TV. Product specification File under Integrated Circuits, IC02

INTEGRATED CIRCUITS DATA SHEET. TBA120U Sound I.F. amplifier/demodulator for TV. Product specification File under Integrated Circuits, IC02 INTEGRATED CIRCUITS DATA SHEET Sound I.F. amplifier/demodulator for TV File under Integrated Circuits, IC02 March 1986 GENERAL DESCRIPTION The is an i.f. amplifier with a symmetrical FM demodulator and

More information

ICS650-01 SYSTEM PERIPHERAL CLOCK SOURCE. Description. Features. Block Diagram DATASHEET

ICS650-01 SYSTEM PERIPHERAL CLOCK SOURCE. Description. Features. Block Diagram DATASHEET DATASHEET ICS650-01 Description The ICS650-01 is a low-cost, low-jitter, high-performance clock synthesizer for system peripheral applications. Using analog/digital Phase-Locked Loop (PLL) techniques,

More information

DSC1001. Low-Power Precision CMOS Oscillator 1.8~3.3V. Features. General Description. Benefits. Block Diagram

DSC1001. Low-Power Precision CMOS Oscillator 1.8~3.3V. Features. General Description. Benefits. Block Diagram DSC.8~.V LowPower Precision CMOS Oscillator General Description The DSC is a silicon MEMS based CMOS oscillator offering excellent jitter and stability performance over a wide range of supply voltages

More information

AAT3238 DATA SHEET. 300mA MicroPower TM High Performance LDO Linear Regulator. Applications. Features. General Description. Typical Application

AAT3238 DATA SHEET. 300mA MicroPower TM High Performance LDO Linear Regulator. Applications. Features. General Description. Typical Application General Description The MicroPower low dropout (LDO) linear regulator is ideally suited for portable applications where very fast transient response, extended battery life, and small size are critical.

More information

Silicon Planar Zener Diode for Surge Absorption and Stabilizer

Silicon Planar Zener Diode for Surge Absorption and Stabilizer Silicon Planar Zener Diode for Surge Absorption and Stabilizer Features These diodes are delivered taped. Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information REJ3G1512-2

More information

AND8229/D. An Introduction to Transient Voltage Suppression Devices APPLICATION NOTE

AND8229/D. An Introduction to Transient Voltage Suppression Devices APPLICATION NOTE An Introduction to Transient Voltage Suppression Devices Prepared by: Jim Lepkowski ON Semiconductor APPLICATION NOTE INTRODUCTION Transient Voltage Suppression (TVS) protection devices such as shielded

More information

Description YD/T 950. YD/T 993 YD/T 1082 GR 1089 Inter-building GR 1089 Intra-building IEC 61000-4-2 V V DRM. @250V/µs I H

Description YD/T 950. YD/T 993 YD/T 1082 GR 1089 Inter-building GR 1089 Intra-building IEC 61000-4-2 V V DRM. @250V/µs I H SDP Series - SOT23-5 RoHS Pb e3 Description This new SIDACtor series is targeted for the tertiary or line driver side protection position for VDSL2+, ADSL2 applications and general I/O protection functions.

More information

LC03-6. Low Capacitance TVS for High-Speed Data Interfaces. Features. Description. Mechanical Characteristics. Applications

LC03-6. Low Capacitance TVS for High-Speed Data Interfaces. Features. Description. Mechanical Characteristics. Applications Description The LC0- transient voltage suppressor is designed to protect components which are connected to high speed telecommunication lines from voltage surges caused by lightning, electrostatic discharge

More information

TLI4946. Datasheet TLI4946K, TLI4946-2K, TLI4946-2L. Sense and Control. May 2009

TLI4946. Datasheet TLI4946K, TLI4946-2K, TLI4946-2L. Sense and Control. May 2009 May 2009 TLI4946 High Precision Hall Effect Latches for Industrial and Consumer Applications TLI4946K, TLI4946-2K, TLI4946-2L Datasheet Rev. 1.0 Sense and Control Edition 2009-05-04 Published by Infineon

More information

logic level for RCD/ GFI/ LCCB applications

logic level for RCD/ GFI/ LCCB applications logic level for RCD/ GFI/ LCCB applications BT68W series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope

More information