NSI45060JDT4G. Adjustable Constant Current Regulator & LED Driver. 45 V, ma 15%, 2.7 W Package

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1 NSI5JDTG Adjustable Constant Current Regulator & Driver 5 V, ma 5%, 2.7 W Package The adjustable constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost effective solution for regulating current in s. The CCR is based on patent-pending Self-Biased Transistor (SBT) technology and regulates current over a wide voltage range. It is designed with a negative temperature coefficient to protect s from thermal runaway at extreme voltages and currents. The CCR turns on immediately and is at 2% of regulation with only.5 V Vak. The R adj pin allows I reg(ss) to be adjusted to higher currents by attaching a resistor between R adj (Pin 3) and the Cathode (Pin ). The R adj pin can also be left open (No Connect) if no adjustment is required. It requires no external components allowing it to be designed as a high or low side regulator. The high anodecathode voltage rating withstands surges common in Automotive, Industrial and Commercial Signage applications. This device is available in a thermally robust package and is qualified to stringent AEC Q standard, which is lead-free RoHS compliant and uses halogen-free molding compound. Features Robust Power Package: 2.7 Watts Adjustable up to ma Wide Operating Voltage Range Immediate Turn-On Voltage Surge Suppressing Protecting s AEC-Q Qualified SBT (Self Biased Transistor) Technology Negative Temperature Coefficient Eliminates Additional Regulation These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant Applications Automobile: Chevron Side Mirror Markers, Cluster, Display & Instrument Backlighting, CHMSL, Map Light AC Lighting Panels, Display Signage, Decorative Lighting, Channel Lettering Switch Contact Wetting Application Note AND839/D Power Dissipation Considerations Application Note AND839/D Automotive CHMSL 2 3 DPAK CASE 369C MARKING DIAGRAM ORDERING INFORMATION Device Package Shipping NSI5JDTG I reg(ss) = Vak = 7.5 V A R adj Anode Cathode YWW NSI JG DPAK (Pb Free) 3 R adj Y = Year WW = Work Week NSIJ = Specific Device Code G = Pb Free Package 25/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. C Semiconductor Components Industries, LLC, 2 August, 2 Rev. Publication Order Number: NSI5JD/D

2 NSI5JDTG MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol Value Unit Anode Cathode Voltage Vak Max 5 V Reverse Voltage V R 5 mv Operating and Storage Junction Temperature Range T J, T stg 55 to +5 C ESD Rating: Human Body Model Machine Model ESD Class 3A ( V) Class B (2 V) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit Steady State Vak = 7.5 V (Note ) I reg(ss) 5 69 ma Voltage Overhead (Note 2) V overhead.8 V Pulse Vak = 7.5 V (Note 3) I reg(p) ma Vak = 7.5 V (Note ) C 7 pf Vak = V (Note ) C 7 pf. I reg(ss) steady state is the voltage (Vak) applied for a time duration 8 sec, using 3 mm 2 2 oz. Copper traces, in still air. 2. V overhead = V in V s. V overhead is typical value for 65% I reg(ss). 3. I reg(p) non repetitive pulse test. Pulse width t msec.. f = MHz,.2 V RMS. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation (Note 5) P D 77.6 Thermal Resistance, Junction to Ambient (Note 5) R θja 7.6 C/W Thermal Reference, Junction to Lead (Note 5) RψJL 6.8 C/W Total Device Dissipation (Note 6) P D Thermal Resistance, Junction to Ambient (Note 6) R θja C/W Thermal Reference, Junction to Lead (Note 6) RψJL 6.3 C/W Total Device Dissipation (Note 7) P D Thermal Resistance, Junction to Ambient (Note 7) R θja. C/W Thermal Reference, Junction to Lead (Note 7) RψJL 6.5 C/W Total Device Dissipation (Note 8) P D Thermal Resistance, Junction to Ambient (Note 8) R θja 5.2 C/W Thermal Reference, Junction to Lead (Note 8) RψJL 5.9 C/W Total Device Dissipation (Note 9) P D Thermal Resistance, Junction to Ambient (Note 9) R θja 5. C/W Thermal Reference, Junction to Lead (Note 9) RψJL 6.2 C/W Total Device Dissipation (Note ) P D Thermal Resistance, Junction to Ambient (Note ) R θja 6. C/W Thermal Reference, Junction to Lead (Note ) RψJL 5.7 C/W Junction and Storage Temperature Range T J, T stg 55 to +5 C NOTE: Lead measurements are made by non contact methods such as IR with treated surface to increase emissivity to.9. Lead temperature measurement by attaching a T/C may yield values as high as 3% higher C/W values based upon empirical measurements and method of attachment mm 2, oz. copper traces, still air mm 2, 2 oz. copper traces, still air mm 2, oz. copper traces, still air mm 2, 2 oz. copper traces, still air mm 2, oz. copper traces, still 7 mm 2, 2 oz. copper traces, still air. 2

3 NSI5JDTG TYPICAL PERFORMANCE CURVES Minimum 3 mm 2, 2 oz Copper Trace, Still Air I reg, CURRENT REGULATION (ma) I reg(p), PULSE CURRENT (ma) , R adj = Open Vak, ANODE CATHODE VOLTAGE (V) Figure. General Performance Curve for CCR Vak, ANODE CATHODE VOLTAGE (V) Figure 3. Pulse Current (I reg(p) ) vs. Anode Cathode Voltage (Vak) 5 R adj = Open Non Repetitive Pulse Test I reg(ss), STEADY STATE CURRENT (ma) I reg(ss), STEADY STATE CURRENT (ma) T A = C T A = 85 C T A = 25 C DC Test Steady State, Still Air, R adj = Open Vak, ANODE CATHODE VOLTAGE (V) Figure 2. Steady State Current (I reg(ss) ) vs. Anode Cathode Voltage (Vak) 7.5 V R adj = Open I reg(p), PULSE CURRENT (ma).79 ma/ C Vak = 7.5 V.6 ma/ C Vak = 7.5 V.3 ma/ C Vak = 7.5 V Figure. Steady State Current vs. Pulse Current Testing I reg, CURRENT REGULATION (ma) V R adj = Open 8 9 I reg(ss), STEADY STATE CURRENT (ma) V TIME (s) R adj ( ), Max Power 25 Figure 5. Current Regulation vs. Time Figure 6. I reg(ss) vs. R adj 3

4 NSI5JDTG POWER DISSIPATION () mm 2 /2 oz mm 2 /2 oz mm 2 /2 oz mm 2 / oz mm 2 / oz 9 3 mm 2 / oz T A, AMBIENT TEMPERATURE ( C) Figure 7. Power Dissipation vs. Ambient T J = 5 C 2 APPLICATIONS D D Anode Q Q2 Qx Anode Q Q2 Qx Cathode R adj R adj R adj Cathode R adj R adj R adj + V in + V in Figure 8. Typical Application Circuit (3 ma each String) Number of s that can be connected is determined by: D is a reverse battery protection diode s = ((V in Q X V F D V F )/ V F ) Example: V in = 2 Vdc, Q X V F = 3.5 Vdc, DVF =.7 V V F = ma (2 Vdc.2 Vdc)/2.2 Vdc = 3 s in series. Figure 9. Typical Application Circuit (9 ma each String) Number of s that can be connected is determined by: D is a reverse battery protection diode Example: V in = 2 Vdc, Q X V F = 3.5 Vdc, DVF =.7 V V F = ma (2 Vdc ( Vdc))/2.6 Vdc = 3 s in series. Number of Drivers = current/3 ma 9 ma/3 ma = 3 Drivers (Q, Q2, Q3)

5 NSI5JDTG Comparison of Circuit using CCR vs. Resistor Biasing ON Semiconductor CCR Design Constant brightness over full Supply Voltage (more efficient), see Figure Little variation of power in s, see Figure Constant current extends strings lifetime, see Figure Current decreases as voltage increases, see Figure Current supplied to string decreases as temperature increases (self-limiting), see Figure 2 Single resistor is used for current select Fewer components, less board space required Surface mount component Resistor Biased Design Large variations in brightness over full Automotive Supply Voltage Large variations of current (power) in s High Supply Voltage/ Higher Current in strings limits lifetime Current increases as voltage increases current decreases as temperature increases Requires costly inventory (need for several resistor values to match intensity) More components, more board space required Through-hole components I (ma) Circuit Current with CCR Device Circuit Current with 25 2 Representative Test Data for Figure 8 Circuit, Current of s, 3 mm 2, 2 oz Copper Area Pd s () Power with CCR Device Power with 25 2 Representative Test Data for Figure 8 Circuit, Pd of s, 3 mm 2, 2 oz Copper Area V in (V) V in (V) Figure. Series Circuit Current Figure. Power Current Regulation: Pulse Mode (I reg(p) ) vs DC Steady-State (I reg(ss) ) There are two methods to measure current regulation: Pulse mode (I reg(p) ) testing is applicable for factory and incoming inspection of a CCR where test times are a minimum. (t < 3 s). DC Steady-State (I reg(ss) ) testing is applicable for application verification where the CCR will be operational for seconds, minutes, or even hours. ON Semiconductor has correlated the difference in I reg(p) to I reg(ss) for stated board material, size, copper area and copper thickness. I reg(p) will always be greater than I reg(ss) due to the die temperature rising during I reg(ss). This heating effect can be minimized during circuit design with the correct selection of board material, metal trace size and weight, for the operating current, voltage, board operating temperature (T A ) and package. (Refer to Thermal Characteristics table). 5

6 NSI5JDTG PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE C V S F B R 2 3 G L A K D 2 PL J H C.3 (.5) M T T SEATING PLANE E U Z NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G.8 BSC.58 BSC H J K L.9 BSC 2.29 BSC R S U.2.5 V Z RECOMMENDED FOOTPRINT SCALE 3: mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NSI5JD/D

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