V CES = 1200V I C = Tc = 100 C. T c = 25 C 610 T c = 100 C 475 A

Transcription

1 APTGL475U12DAG Single switch with Series diode Trench + Field Stop IGBT4 V CES = 12V I C = Tc = 1 C EK E G C CK Application Zero Current Switching resonant mode Features Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration AlN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit V CES Collector - Emitter Breakdown Voltage 12 V I C Continuous Collector Current T c = 25 C 61 T c = 1 C 475 A I CM Pulsed Collector Current T c = 25 C 8 V GE Gate Emitter Voltage ±2 V P D Maximum Power Dissipation T c = 25 C 237 W RBSOA Reverse Bias Safe Operating Area T j = 15 C 115V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT52 on APTGL475U12DAG Rev 2 October, 212

2 All T j = 25 C unless otherwise specified APTGL475U12DAG Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I CES Zero Gate Voltage Collector Current V GE = V ; V CE = 12V 4 ma V CE(sat) Collector Emitter Saturation Voltage V GE =15V T j = 25 C I C = 4A T j = 15 C 2.2 V V GE(th) Gate Threshold Voltage V GE = V CE, I C = 1 ma V Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C ies Input Capacitance V GE = V 24.6 C oes Output Capacitance V CE = 25V 1.62 nf Reverse Transfer Capacitance f = 1MHz 1.38 C res Q G Gate charge V GE =±15V 3.4 µc T d(on) Turn-on Delay Time Inductive Switching (25 C) 16 T r Rise Time V GE = ±15V 3 V CE = 6V ns T d(off) Turn-off Delay Time I 34 C = 4A T f Fall Time R G = T d(on) Turn-on Delay Time Inductive Switching (15 C) 17 V GE = ±15V T r Rise Time V 4 CE = 6V ns T d(off) Turn-off Delay Time I C = 4A 45 T f Fall Time R G = E on Turn-on Switching Energy V GE = ±15V V CE = 6V T J = 25 C T J = 15 C mj E off Turn-off Switching Energy I C = 4A T J = 25 C 22 R G = 1.8 T J = 15 C 37.2 mj I SC Short circuit current V GE 15V ; V CC =9V t p 1µs ; T j =15 C 2 A Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V RRM Maximum Repetitive Reverse Voltage 12 V I RM Maximum Reverse Leakage Current V R =12V T j = 25 C 4 T j = 125 C 2 µa I F DC Forward Current T j = 9 C 36 A I F = 36A V F Diode Forward Voltage I F = 72A 3 V I F = 36A T j = 125 C 1.8 t rr Q rr Reverse Recovery Time Reverse Recovery Charge I F = 36A V R = 8V di/dt = 12A/µs T j = 25 C 265 T j = 125 C 35 T j = 25 C 3.3 T j = 125 C ns µc APTGL475U12DAG Rev 2 October, 212

3 APTGL475U12DAG Thermal and package characteristics Symbol Characteristic Min Typ Max Unit R thjc Junction to Case Thermal Resistance IGBT.65 Series diode.13 C/W V ISOL RMS Isolation Voltage, any terminal to case t =1 min, 5/6Hz 4 V T J Operating junction temperature range T STG Storage Temperature Range C T C Operating Case Temperature -4 1 Torque Mounting torque To Heatsink M6 3 5 For teminals M N.m Wt Package Weight 3 g SP6 Package outline (dimensions in mm) See application note APT61 - Mounting Instructions for SP6 Power Modules on Typical IGBT Performance Curve Fmax, Operating Frequency (khz) Operating Frequency vs Collector Current 8 V CE =6V 7 D=5% 6 R G =1.8 Ω T J =15 C 5 ZCS Tc=75 C 4 3 Hard ZVS switching I C (A) APTGL475U12DAG Rev 2 October, 212

4 APTGL475U12DAG 8 Output Characteristics (V GE =15V) 8 Output Characteristics T J = 15 C 6 T J =25 C 6 V GE =19V 4 T J =15 C 4 V GE =15V V GE =9V V CE (V) V CE (V) Transfert Characteristics T J =25 C E (mj) Energy losses vs Collector Current V CE = 6V V GE = 15V R G = 1.8 Ω T J = 15 C Eon Eoff 2 T J =15 C V GE (V) Switching Energy Losses vs Gate Resistance V CE = 6V V GE =15V I C = 4A T J = 15 C Eon Reverse Bias Safe Operating Area E (mj) Eoff V GE =15V T J =15 C R G =1.8 Ω Gate Resistance (ohms) V CE (V).7 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance ( C/W).6.9 IGBT Single Pulse rectangular Pulse Duration (Seconds) APTGL475U12DAG Rev 2 October, 212

5 Typical Series diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration.15 APTGL475U12DAG Thermal Impedance ( C/W) Single Pulse Rectangular Pulse Duration (Seconds) I F, Forward Current (A) Forward Current vs Forward Voltage T J =25 C t rr, Reverse Recovery Time (ns) Trr vs. Current Rate of Charge V R =8V 72 A 36 A 18 A V F, Anode to Cathode Voltage (V) -di F /dt (A/µs) Q RR, Reverse Recovery Charge (µc) QRR vs. Current Rate Charge V R =8V 72 A 36 A 18 A di F /dt (A/µs) I RRM, Reverse Recovery Current (A) IRRM vs. Current Rate of Charge V R =8V 72 A 36 A 18 A di F /dt (A/µs) C, Capacitance (pf) Capacitance vs. Reverse Voltage V R, Reverse Voltage (V) Max. Average Forward Current vs. Case Temp. 6 Duty Cycle =.5 T J =175 C 48 I F (AV) (A) Case Temperature (ºC) APTGL475U12DAG Rev 2 October, 212

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