STTH1R04-Y. Automotive ultrafast recovery diode. Features. Description

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1 Automotive ultrafast recovery diode Features Datasheet - production data K SMA STTH1R4AY Table 1. Device summary Symbol Value I F(AV) 1 A V RRM 4 V T j (max) 175 C V F (typ) t rr (typ) A K.9 V 14 ns A SMB STTH1R4UY Negligible switching losses Low forward and reverse recovery times High junction temperature AEC-Q1 qualified ECOPACK 2 compliant component Description The STTH1R4-Y series uses ST's new 4 V planar Pt doping technology. Specially suited for switching mode base drive and transistor circuits. Packaged in surface mount packages, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection for all automotive application. July 213 DocID24449 Rev 1 1/ This is information on a product in full production.

2 Characteristics STTH1R4-Y 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 4 V I F(AV) Average forward current, δ =.5 SMA T lead = 13 C SMB T lead = 14 C 1. A I FSM Surge non repetitive forward current t p = ms Sinusoidal 3 A T stg Storage temperature range -65 to +175 C T j Operating junction temperature (1) -4 to 175 C 1. On infinite heatsink with mm lead length Table 3. Thermal parameters Symbol Parameter Value Unit R th(j-l) Junction to lead SMA 3 SMB 25 C/W Table 4. Static electrical characteristics Symbol Parameter Test conditions Min Typ Max Unit I R (1) Reverse leakage current T j = 25 C 5 V R = V RRM T j = 125 C 5 5 µa T j = 25 C 1.6 V F (2) Forward voltage drop T j = C I F = 1. A V T j = 15 C Pulse test: t p = 5 ms, δ < 2 % 2. Pulse test: t p = 38 µs, δ < 2 % To evaluate the conduction losses use the following equation: P =.9 x I F(AV) +.25 x I F 2 (RMS) 2/ DocID24449 Rev 1

3 Characteristics Table 5. Dynamic characteristics Symbol Parameter Test conditions Min Typ Max Unit t rr I RM Reverse recovery time Reverse recovery current I F = 1 A, di F /dt = -5 A/µs, V R = 3 V, T j = 25 C I F = 1 A, di F /dt = - A/µs, V R = 3 V, T j = 25 C I F = 1 A, di F /dt = -2 A/µs, V R = 32 V, T j = 125 C ns A I t fr Forward recovery time F = 1 A di F /dt = A/µs 5 ns V FR = 1.1 x V Fmax, T j = 25 C V FP Forward recovery voltage I F = 1 A, di F /dt = A/µs, T j = 25 C 2.9 V 1.6 P(W) Figure 1. Conduction losses versus average forward current Figure 2. Forward voltage drop versus forward current. I FM (A) 1.4 δ=.5 δ=.1 δ=.2 δ=.5 δ=1 1.2 T J =15 C (Maximum values) T. 1. T J =15 C (Typical values) T J =25 C (Maximum values).2 IF(AV) (A) δ=tp/t tp V FM (V) Figure 3. Relative variation of thermal impedance junction to ambient versus pulse duration, SMA Z th(j-a) /Rth(j-a) SMA S cu= 1cm².2 Single pulse.1 t P (s). 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E Figure 4. Relative variation of thermal impedance junction to ambient versus pulse duration, SMB Z th(j-a) /Rth(j-a) SMB S cu = 1 cm Single pulse t P (s) 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 DocID24449 Rev 1 3/

4 Characteristics STTH1R4-Y Figure 5. Junction capacitance versus reverse voltage applied (typical values) Figure 6. Reverse recovery charges versus di F /dt (typical values) C(pF) F=1MHz V OSC =3mV RMS T j =25 C Q RR (nc) I F = 1 A V R =32 V T j =125 C 1 V R (V) 1 8 T j =25 C 4 di F /dt(a/µs) Figure 7. Reverse recovery time versus di F /dt (typical values) t RR (ns) T j =125 C T j =25 C di F /dt(a/µs) I F = 1 A V R =32 V Figure 8. Peak reverse recovery current versus di F /dt (typical values) I RM (A) I F = 1 A V R =32 V T j =125 C T j =25 C di F /dt(a/µs) Figure 9. Relative variations of dynamic parameters versus junction temperature Figure. Transient peak forward voltage versus di F /dt (typical values) Q RR ;I RM [T j ]/Q j RR ;I RM [T j =125 C] j I F = 1 A V R =32 V 3 25 V Fp (V) I F =1 A T j =125 C I RM Q RR T j ( C) di F /dt(a/µs) / DocID24449 Rev 1

5 Characteristics Figure 11. Forward recovery time versus di F /dt (typical values) t FR (ns) di F /dt(a/µs) I F =1 A T j =125 C Figure 12. Thermal resistance junction to ambient versus copper surface under each lead R th(j-a) (C/W) epoxy printed board FR4, copper thickness Cu = 35 µm SMA S CU (cm²) Figure 13. Thermal resistance junction to ambient versus copper surface under each lead 2 R th(j-a) (C/W) epoxy printed board FR4, copper thickness Cu = 35 µm SMB 15 5 S CU (cm²) DocID24449 Rev 1 5/

6 Package information STTH1R4-Y 2 Package information Epoxy meets UL94, V Lead-free package Cooling method: by conduction (C) In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Figure 14. SMB dimension definitions E1 D E A1 C L A2 b 6/ DocID24449 Rev 1

7 Package information Ref. Table 6. SMB dimension values Millimeters Dimensions Inches Min. Typ. Max. Min. Typ. Max. A A b c D E E L Figure 15. SMB footprint, dimensions in mm (inches) (.64) (.2) (.64) 2.18 (.86) 5.84 (.23) DocID24449 Rev 1 7/

8 Package information STTH1R4-Y Figure 16. SMA dimension definitions E1 D E A1 C L A2 b Ref. Table 7. SMA dimension values Millimeters Dimensions Inches Min. Typ. Max. Min. Typ. Max. A A b c D E E L Figure 17. SMA footprint, dimensions in mm (inches) (.55) (.4) (.55) 1.64 (.64) 5.43 (.214) 8/ DocID24449 Rev 1

9 Ordering information 3 Ordering information Table 8. Ordering information Order code Marking Package Weight Base qty Delivery mode STTH1R4AY HR4Y SMA.68 g 5 Tape and reel STTH1R4UY BR4Y SMB.12 g 25 Tape and reel 4 Revision history Table 9. Document revision history Date Revision Description of changes 9-Jul First issue DocID24449 Rev 1 9/

10 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 213 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America / DocID24449 Rev 1

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