N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Transcription

1 N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. BF91 Applications Input- and mixer stages especially for FM- and VHF TV-tuners up to 3 MHz. Features Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance 3 G D G BF91 Marking: BF91 Plastic case (TO 5) 1=Drain, =Source, 3=Gate 1, =Gate 13 S Absolute Maximum Ratings T amb = 5 C, unless otherwise specified Parameter Test Conditions Type Symbol Value Unit Drain - source voltage V DS V Drain current I D 3 ma Gate 1/Gate - source peak current ±I G1/GSM 1 ma Total power dissipation T amb C P tot mw Channel temperature T Ch 15 C Storage temperature range T stg 55 to +15 C Maximum Thermal Resistance T amb = 5 C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Channel ambient on glass fibre printed board ( x 5 x 1.5) mm 3 plated with 35m Cu R thcha 5 K/W Document Number 5 Rev. 3, -Jan-99 1 (7)

2 BF91 Electrical DC Characteristics T amb = 5 C, unless otherwise specified Parameter Test Conditions Type Symbol Min Typ Max Unit Drain - source I D = 1 A, V G1S = V GS = V V (BR)DS V breakdown voltage Gate 1 - source ±I G1S = 1 ma, V GS = V DS = ±V (BR)G1SS 1 V breakdown voltage Gate - source ±I GS = 1 ma, V G1S = V DS = ±V (BR)GSS 1 V breakdown voltage Gate 1 - source ±V G1S = 5 V, V GS = V DS = ±I G1SS 1 na leakage current Gate - source ±V GS = 5 V, V G1S = V DS = ±I GSS 1 na leakage current Drain current V DS = 15 V, V G1S =, V GS = V BF91 I DSS ma BF91A I DSS 1.5 ma BF91B I DSS 9.5 ma Gate 1 - source V DS = 15 V, V GS = V, I D = A V G1S(OFF) 3.5 V cut-off voltage Gate - source cut-off voltage V DS = 15 V, V G1S =, I D = A V GS(OFF) 3.5 V Electrical AC Characteristics V DS = 15 V, I D = 1 ma, V GS = V, f = 1 MHz, T amb = 5 C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Forward transadmittance y 1s 1 15 ms Gate 1 input capacitance C issg1 3.7 pf Gate input capacitance V G1S =, V GS = V C issg 1. pf Feedback capacitance C rss 5 ff Output capacitance C oss 1. pf Power gain G S = ms, G L =.5 ms, f = MHz G ps db AGC range V GS = to V, f = MHz G ps 5 db Noise figure G S = ms, G L =.5 ms, f = MHz F 1..5 db (7) Document Number 5 Rev. 3, -Jan-99

3 Typical Characteristics (T amb = 5 C unless otherwise specified) BF91 P tot Total Power Dissipation ( mw ) I D Drain Current ( ma ) 9 11 Y 1S Forward Transadmittance ( ms ) T amb Ambient Temperature ( C ) Figure 1. Total Power Dissipation vs. Ambient Temperature V G1S =.V.V.V.V.V.V.V V DS Drain Source Voltage ( V ) Figure. Drain Current vs. Drain Source Voltage I DS =1mA V GS Gate Source Voltage ( V ) V G1S =.5V V.5V Figure 3. Forward Transadmittance vs. Gate Source Voltage Y 1S Forward Transadmittance ( ms ) 9 11 C issg1 Gate 1 Input Capacitance ( pf ) C issg Gate Input Capacitance ( pf ) f=1mhz V GS =5V V V 3V V 1V V G1S Gate 1 Source Voltage ( V ) Figure. Forward Transadmittance vs. Gate 1 Source Voltage V GS =V f=1mhz V G1S Gate 1 Source Voltage ( V ) Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage V G1S = f=1mhz V GS Gate Source Voltage ( V ) Figure. Gate Input Capacitance vs. Gate Source Voltage Document Number 5 Rev. 3, -Jan-99 3 (7)

4 BF91 C oss Output Capacitance ( pf ) V GS =V f=1mhz V DS Drain Source Voltage ( V ) Figure 7. Output Capacitance vs. Drain Source Voltage Im ( y 11 ) ( ms ) MHz 3MHz MHz 1MHz MHz f=7mhz 5MHz Re (y 11 ) ( ms ) V GS =V I D =5...mA f=5...7mhz Figure. Short Circuit Input Admittance Im ( y 1 ) ( ms ) V GS =V f=5...7mhz 5 I D =5mA 1MHz 1mA 1 ma MHz 3MHz 15 MHz 5MHz 5 MHz 7MHz Re (y 1 ) ( ms ) f=5mhz Figure 9. Short Circuit Forward Transfer Admittance Im ( y ) ( ms ) I D =5mA 3MHz MHz 1MHz MHz 5MHz Re (y ) ( ms ) f=7mhz MHz I D =ma V GS =V I D =5...mA f=5...7mhz Figure 1. Short Circuit Output Admittance (7) Document Number 5 Rev. 3, -Jan-99

5 V DS = 15 V, I D = 5 to ma, V GS = V, Z = 5 BF91 S 11 S 1 j.5 j j 1 9 j. j ÁÁÁ. ÁÁÁ.5 ÁÁ 1 ÁÁ ÁÁ MHz.. j. 7 MHz 5 3 j S 1 j.5 j 1 9 j Figure 11. Input reflection coefficient Figure 13. Reverse transmission coefficient S 9 1 j.5 j j 3 j. j MHz. 1. I D = ma 1mA 5mA 3 3 j j5 7 MHz Figure 1. Forward transmission coefficient j.5 j 1 93 j Figure 1. Output reflection coefficient Document Number 5 Rev. 3, -Jan-99 5 (7)

6 BF91 Dimensions in mm 9 1 (7) Document Number 5 Rev. 3, -Jan-99

7 BF91 Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol (197) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. Class I and II ozone depleting substances in the Clean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision /5/EEC and 91/9/EEC Annex A, B and C ( transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-75 Heilbronn, Germany Telephone: 9 () , Fax number: 9 () Document Number 5 Rev. 3, -Jan-99 7 (7)