Silicon NPN Phototransistor
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1 Silicon NPN Phototransistor DESCRIPTION 7 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth is matched with 9 nm to 95 nm IR emitters. FEATURES Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 High radiant sensitivity Daylight blocking filter matched with 9 nm emitters Fast response times Angle of half sensitivity: = ± 15 Base terminal connected Material categorization: For definitions of compliance please see APPLICATIONS Detector for industrial electronic circuitry, measurement and control PRODUCT SUMMARY COMPONENT I ca (ma) (deg).5 (nm) 9 ± 15 9 to 9 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: pcs, pcs/bulk T-1¾ Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector base voltage V CBO V Collector emitter voltage V CEO 7 V Emitter base voltage V EBO 5 V Collector current I C 5 ma Collector peak current t p /T =.5, t p 1 ms I CM 1 ma Power dissipation T amb 7 C P V 15 mw Junction temperature T j 1 C Operating temperature range T amb - to + 1 C Storage temperature range T stg - to + 1 C Soldering temperature t 5 s, 2 mm from body T sd 26 C Thermal resistance junction/ambient Connected with Cu wire,.1 mm 2 R thja 35 K/W Rev. 1.6, 3-May-13 1 Document Number: 155 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
2 2 P V - Power Dissipation (mw) R thja T amb - Ambient Temperature ( C) 1 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I C = 1 ma V (BR)CEO 7 V Collector emitter dark current V CE = 1 V, E = I CEO 1 5 na DC current gain, I C = 5 ma, E = h FE 5 Collector emitter capacitance V CE = V, f = 1 MHz, E = C CEO 15 pf Collector base capacitance V CE = V, f = 1 MHz, E = C CBO 19 pf Collector light current E e = 1 mw/cm 2, = 95 nm, V CB = 5 V I ca 3 9 ma Angle of half sensitivity ± 15 deg Wavelength of peak sensitivity p 93 nm Range of spectral bandwidth.5 9 to 9 nm Collector emitter saturation voltage E e = 1 mw/cm 2, = 95 nm, I C = 1 ma V CEsat 13 3 mv Turn-on time V S = 5 V, I C = 5 ma, R L = 1 t on 6 μs Turn-off time V S = 5 V, I C = 5 ma, R L = 1 t off 5 μs Cut-off frequency V S = 5 V, I C = 5 ma, R L = 1 f c 11 khz BASIC CHARACTERISTICS (T amb = 25 C, unless otherwise specified) 1 2. I CEO - Collector Dark Current (na) V CE = 1 V 6 T amb - Ambient Temperature ( C) 1 I ca rel - Relative Collector Current E e = 1 mw/cm 2 λ = 95 nm T amb - Ambient Temperature ( C) Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature Rev. 1.6, 3-May-13 2 Document Number: 155 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
3 I ca - Collector Light Current (ma) λ = 95 nm C CBO - Collector Base Capacitance (pf) 2 f = 1 MHz E e - Irradiance (mw/cm²) 9 26 V CB - Collector Base Voltage (V) Fig. - Collector Light Current vs. Irradiance Fig. 7 - Collector Base Capacitance vs. Collector Base Voltage I ca - Collector Light Current (ma) 1 λ = 95 nm E e = 1 mw/cm mw/cm 2.2 mw/cm mw/cm 2.5 mw/cm 2.2 mw/cm V CE - Collector Emitter Voltage (V) 1 C CEO - Collector Ermitter Capacitance (pf) f = 1 MHz V CE - Collector Ermitter Voltage (V) 1 Fig. 5 - Collector Light Current vs. Collector Emitter Voltage Fig. - Collector Emitter Capacitance vs. Collector Emitter Voltage B - Amplification t on /t off - Turn-on/Turn-off Time (µs) R L = 1 Ω λ = 95 nm t on t off 9 25 I C - Collector Current (ma) I C - Collector Current (ma) Fig. 6 - Amplification vs. Collector Current Fig. 9 - Turn-on/Turn-off Time vs. Collector Current Rev. 1.6, 3-May-13 3 Document Number: 155 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
4 S(λ) rel - Relative Spectral Sensitivity λ - Wavelength (nm) S rel - Relative Sensitivity ϕ - Angular Displacement Fig. 1 - Relative Spectral Sensitivity vs. Wavelength Fig Relative Radiant Sensitivity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters ±.15 C 5.75 E B ±.15 (.55) Chip position R 2.5 (sphere).3 ±.5 35 ±.3.6 ± ± <.7 Area not plane 1.5 ± nom nom. technical drawings according to DIN specifications Drawing-No.: Issue:1; Rev. 1.6, 3-May-13 Document Number: 155 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
5 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun- 1 Document Number: 91
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2N2222A. Small Signal Switching Transistor. NPN Silicon. MIL PRF 19500/255 Qualified Available as JAN, JANTX, and JANTXV. http://onsemi.com.
Small Signal Switching Transistor NPN Silicon Features MILPRF19/ Qualified Available as JAN, JANTX, and JANTXV COLLECTOR MAXIMUM RATINGS (T A = unless otherwise noted) Characteristic Symbol Value Unit
IR Receiver Modules for Remote Control Systems
IR Receiver Modules for Remote Control Systems FEATURES Very low supply current Photo detector and preamplifier in one package Internal filter for PCM frequency Supply voltage: 2.5 V to 5.5 V Improved
50 W Power Resistor, Thick Film Technology, TO-220
50 W Power Resistor, Thick Film Technology, TO-220 FEATURES 50 W at 25 C heatsink mounted Adjusted by sand trimming Leaded or surface mount versions High power to size ratio Non inductive element Material
1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. www.vishay.
TRANSZORB Transient Voltage Suppressors Case Style.5KE FEATURES Glass passivated chip junction Available in uni-directional and bi-directional 500 W peak pulse power capability with a /0 μs waveform, repetitive
5 V, 1 A H-Bridge Motor Driver
, A H-Bridge Motor Driver DESCRIPTION The SIP200 is an integrated, buffered H-bridge with TTL and CMOS compatible inputs with the capability of delivering up to A continuous current at DD supply. The SIP200
BC807; BC807W; BC327
Rev. 06 7 November 009 Product data sheet. Product profile. General description PNP general-purpose transistors. Table. Product overview Type number Package NPN complement NXP JEIT BC807 SOT - BC87 BC807W
N-Channel 100 V (D-S) MOSFET
Si4DS N-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).4 at V GS = V..67 at V GS = 6 V..9 nc.78 at V GS = 4.5 V.7 FEATURES TrenchFET Power MOSFET % R g Tested
45 V, 100 ma NPN general-purpose transistors
Rev. 9 2 September 214 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number
Knob Potentiometer FEATURES. P16NP P16NM Panel Cutout. Thickness nut 2 mm washer 1.5 mm. Panel sealing ring 12 wrench Thread M10 x 0.75 10.2 9.
Knob Potentiometer P6, PA6 FEATURES Test according to CECC 4000 or IEC 60393- P6 - Version for professional and industrial applications (cermet) W at 40 C PA6 - Version for professional audio applications
SuperTan Extended (STE) Capacitors, Wet Tantalum Capacitors with Hermetic Seal
SuperTan Extended () Capacitors, Wet Tantalum Capacitors with Hermetic Seal FEATURES SuperTan Extended () represents a major breakthrough in wet tantalum capacitor Available technology. Its unique cathode
VJ 6040 UHF Chip Antenna for Mobile Devices
VJ 64 UHF Chip Antenna for Mobile Devices VJ 64 The company s products are covered by one or more of the following: WO2862 (A1), US2833 (A1), US283575 (A1), WO281173 (A1). Other patents pending. DESCRIPTION
Aluminum Capacitors Solid Axial
SAL-A End of Life. Last Available Purchase Date is -December- Radial higher CV/volume Fig. QUICK REFERENCE DATA DESCRIPTION VALUE Maximum case size (Ø D x L in mm) 6.7 x. to.9 x. Rated capacitance range
2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40 80 VOLTS, 30 WATTS
,, Medium-Power Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation Voltage Excellent
Metal Film Resistors, Pulse Withstanding Protective
End of Life - August 213 www.vishay.com Metal Film Resistors, Pulse Withstanding Protective STANDARD ELECTRICAL SPECIFICATIONS GLOBAL HISTORICAL POWER RATING P 7 C W FEATURES Special design provides lightning
DATA SHEET. BC875; BC879 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 May 28 2004 Nov 05 FEATURES High DC current gain (min. 1000) High current (max. 1 A) Low voltage (max. 80 V) Integrated
GaAs/GaAlAs IR Emitting Diodes in ø 5 mm Package
GaAs/GaAlAs IR Emitting Diodes in ø 5 mm Package Description TSIL64 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison
Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.077 Q g (Max.) (nc) 72 Q gs (nc) 11 Q gd (nc) 32 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
Schottky Rectifier, 100 A
Schottky Rectifier, A VS-BGQ Cathode Anode PowerTab PRODUCT SUMMARY Package PowerTab I F(AV) A V R V V F at I F 0.82 V I RM 180 ma at 125 C T J max. 175 C Diode variation Single die E AS 9 mj FEATURES
Knob Potentiometer with Switch
Knob Potentiometer with Switch The is a revolutionary concept in panel mounted potentiometers. This unique design consists of a knob driving and incorporating a cermet potentiometer. Only the mounting
P-Channel 60 V (D-S) MOSFET
TP6K P-Channel 6 V (D-S) MOSFET G S PRODUCT SUMMARY V DS (V) R DS(on) ( ) V GS(th) (V) I D (ma) - 6 6 at V GS = - V - to - - 85 TO-6 (SOT-) Top View D Marking Code: 6Kwll 6K = Part Number Code for TP6K
DATA SHEET. BST50; BST51; BST52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Feb 20.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 Supersedes data of 2001 Feb 20 2004 Dec 09 FEATURES High current (max. 0.5 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS