Optocoupler, Phototransistor Output, with Base Connection

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1 HA/HA2/HA3/HA4/HA5 FEATURES Interfaces with common logic families Input-output coupling capacitance < pf Industry standard dual-in line 6-pin package A C NC B C E Isolation test voltage: 5300 V RMS Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC i79004 DESCRIPTION The HAx family is an industry standard single channel phototransistor coupler. It includes the HA/HA2/HA3/HA4/HA5 couplers. Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. The isolation performance is accomplished through Vishay double molding isolation manufacturing process. Compliance to DIN EN partial discharge isolation specification is available is by ordering option. These isolation processes and the Vishay ISO900 quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers. Note: Designing with data sheet is covered in Application Note 45. APPLICATIONS AC mains detection Reed relay driving Switch mode power supply feedback Telephone ring detection Logic ground isolation Logic coupling with high frequency noise rejection AGENCY APPROVALS UL577, file no. E52744 system code H or J, double protection CSA 9375 BSI IEC 60950; IEC DIN EN available with option FIMKO ORDER INFORMATION PART REMARKS HA CTR > 50 %, DIP-6 HA2 CTR > 20 %, DIP-6 HA3 CTR > 20 %, DIP-6 HA4 CTR > 0 %, DIP-6 HA5 CTR > 30 %, DIP-6 HA-X006 CTR > 50 %, DIP mil (option 6) HA-X007 CTR > 50 %, SMD-6 (option 7) HA-X009 CTR > 50 %, SMD-6 (option 9) Note For additional information on the available options refer to option information. Document Number: For technical questions, contact: Rev..5, 08-May-08 27

2 HA/HA2/HA3/HA4/HA5 ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 6 V Forward current 60 ma Surge current t 0 µs SM 2.5 A Power dissipation P diss 00 mw OUTPUT Collector emitter breakdown voltage O 70 V Emitter base breakdown voltage V EBO 7 V Collector current I C 50 ma t < ms I C 00 ma Power dissipation P diss 50 mw COUPLER Isolation test voltage V ISO 5300 V RMS Creepage distance 7 mm Clearance distance 7 mm Insulation thickness between emitter and detector 0.4 mm Comparative tracking index per DIN IEC 2/VDE 0303, part 75 Isolation resistance V IO = 500 V, T amb R IO 0 2 Ω V IO = 500 V, T amb = 00 C R IO 0 Ω Storage temperature range T stg - 55 to + 50 C Operating temperature range T amb - 55 to + 00 C Junction temperature T j 00 C Soldering temperature max. 0 s, dip soldering: distance to seating plane.5 mm T sld 260 C Note T amb, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT HA V F..5 V HA2 V F..5 V Forward voltage = 0 ma HA3 V F..5 V HA4 V F..5 V HA5 V F..7 V Reverse current V R = 3 V I R 0 µa Capacitance V R = 0 V, f = MHz C O 50 pf OUTPUT Collector emitter breakdown voltage I C = ma, = 0 ma BO 30 V Emitter collector breakdown voltage I E = 00 µa, = 0 ma BV ECO 7 V Collector base breakdown voltage I C = 0 µa, = 0 ma BV CBO 70 V Collector emitter leakage current = 0 V, = 0 ma I CEO 5 50 na Emitter collector capacitance = 0 V C CE 6 pf For technical questions, contact: Document Number: Rev..5, 08-May-08

3 HA/HA2/HA3/HA4/HA5 ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT COUPLER Collector emitter, saturation voltage I CE = ma, = 0 ma sat 0.4 V Capacitance (input-output) C IO pf Note T amb, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT HA CTR DC 50 % HA2 CTR DC 20 % DC current transfer ratio = 0 V, = 0 ma HA3 CTR DC 20 % HA4 CTR DC 0 % HA5 CTR DC 30 % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Switching time I C = 2 ma, R L = 00 Ω, = 0 V t on, t off 3 µs TYPICAL CHARACTERISTICS T amb, unless otherwise specified V F -Forward Voltage (V) i4n25_0 = - 55 C = 85 C 0 - Forward Current (ma) 00 Fig. - Forward Voltage vs. Forward Current NCTR - Normalized CTR.5 = 0 V, = 0 ma, CTR CE(sat) NCTR(SAT) NCTR i4n25_02 Fig. 2 - Normalized Non-Saturated and Saturated CTR vs. LED Current Document Number: For technical questions, contact: Rev..5, 08-May

4 HA/HA2/HA3/HA4/HA5 N CTR - Normalized CTR.5 0. i4n25_03 = 0 V, = 0 ma, CTR CE(sat) = 50 C NCTR 0 NCTR(SAT) 00 I CE - Collector Current (ma) i4n25_06 50 C 70 C 25 C 85 C Fig. 3 - Normalized Non-Saturated and Saturated CTR vs. LED Current Fig. 6 - Collector Emitter Current vs. Temperature and LED Current NCTR - Normalized CTR.5 = 0 V, = 0 ma, CTR CE(sat) = 70 C NCTR(SAT) NCTR I CEO - Collector Emitter (na) Typical = 0 V 0. i4n25_ i4n25_ T amb - Ambient Temperature ( C) 00 Fig. 4 - Normalized Non-Saturated and Saturated CTR vs. LED Current Fig. 7 - Collector Emitter Leakage Current vs. Temperature NCTR - Normalized CTR.5 0. i4n25_05 = 0 V, = 0 ma, CTR CE(sat) = 85 C 0 NCTR(SAT) NCTR 00 Fig. 5 - Normalized Non-Saturated and Saturated CTR vs. LED Current NCTR cb - Normalized CTR cb.5 V CB = 9.3 V, = 0 ma, 25 C 50 C 70 C i4n25_08 Fig. 8 - Normalized CTR cb vs. LED Current and Temperature For technical questions, contact: Document Number: Rev..5, 08-May-08

5 HA/HA2/HA3/HA4/HA5 Normalized Photocurrent 0 = 0 ma, 0. Nib, = - 20 C Nib, = 20 C Nib, = 50 C Nib, = 70 C i4n25_09 Fig. 9 - Normalized Photocurrent vs. and Temperature t PLH - Propagation Delay (µs) = 0 ma, V CC = 5.0 V, V th =.5 V t PHL t PLH Fig. 2 - Propagation Delay vs. Collector Load Resistor i4n25_2 R L - Collector Load Resistor (kω) t PHL - Propagation Delay (µs).2 70 C Nh FE - Normalized h FE C 25 C I B = 20 µa, = 0 V, V O t D t R t PLH V TH =.5 V i4n25_0 I b - Base Current (µa) i4n25_3 t PHL t S t F Fig. 0 - Normalized Non-Saturated h FE vs. Base Current and Temperature Fig. 3 - Switching Timing Nh FE(sat) - Normalized Saturated h FE.5 70 C 25 C - 20 C 50 C = 0 V, I b = 20 µa i4n25_ I b - Base Current (µa) = 0 ma i4n25_4 F = 0 khz DF = 50 % V CC = 5.0 V R L V O Fig. - Normalized HFE vs. Base Current and Temperature Fig. 4 - Switching Schematic Document Number: For technical questions, contact: Rev..5, 08-May

6 HA/HA2/HA3/HA4/HA5 PACKAGE DIMENSIONS in inches (millimeters) 3 2 Pin one ID (6.30) (6.50) ISO method A (8.50) (8.70) 39 (0) min. 48 (0.45) 22 (5) 0.30 (3.30) (7.62) typ. 0 (3.8) 4 typ. 8 (0.45) 22 (5) 3 (0.80) min. 3 (0.80) 35 (0.90) 0 (2.54) typ. 3 to (0.25) typ to (7.62 to 8.8) 0.4 (2.90) 0.30 (3.0) i78004 Option 6 Option 7 Option (0.36) 0.39 (9.96) (7.8) 0.29 (7.4) (7.62) typ (9.53) (3 ) (7.62) ref. 4 (0.35) 0 (0.25) (0.6) (0.92) 28 (0.7) 0.35 (8.0) min (8.4) min (0.3) max (4.6) 0.60 (4.) 040 (2) 098 (0.249) 20 ( ) 40 (2 ) 0.35 (8.00) min. 2 (0.30 ) typ. 5 max For technical questions, contact: Document Number: Rev..5, 08-May-08

7 HA/HA2/HA3/HA4/HA5 OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (987) and its London Amendments (990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 9/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D Heilbronn, Germany Document Number: For technical questions, contact: Rev..5, 08-May

8 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: Revision: 8-Jul-08

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