2SK1056, 2SK1057, 2SK1058

Size: px
Start display at page:

Download "2SK1056, 2SK1057, 2SK1058"

Transcription

1 SK6, SK7, SK8 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with SJ160, SJ161 and SJ16 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier

2 1 3 SK6, SK7, SK8 Outline TO-3P D G S 1. Gate. Source (Flange) 3. Drain Absolute Maximum Ratings (Ta = C) Item Symbol Ratings Unit Drain to source voltage SK6 V DSX V SK7 140 SK8 160 Gate to source voltage V GSS ±1 V Drain current I D 7 A Body to drain diode reverse drain current I DR 7 A Channel dissipation Pch* 1 0 W Channel temperature Tch 10 C Storage temperature Tstg to +10 C Note: 1. Value at T C = C

3 SK6, SK7, SK8 Electrical Characteristics (Ta = C) Item Symbol Min Typ Max Unit Test conditions Drain to source SK6 V (BR)DSX V I D = ma, V GS = V breakdown voltage SK7 140 SK8 160 Gate to source breakdown voltage V (BR)GSS ±1 V I G = ±0 µa, V DS = 0 Gate to source cutoff voltage V GS(off) V I D = 0 ma, V DS = V Drain to source saturation voltage V DS(sat) 1 V I D = 7 A, V GD = 0 * 1 Forward transfer admittance yfs S I D = 3 A, V DS = V * 1 Input capacitance Ciss 600 pf V GS = V, V DS = V, Output capacitance Coss 30 pf f = 1 MHz Reverse transfer capacitance Crss pf Turn-on time t on 180 ns V DD = 0 V, I D = 4 A, Turn-off time t off 60 ns Note: 1. Pulse test 3

4 SK6, SK7, SK8 Channel Dissipation Pch (W) Power vs. Temperature Derating 0 0 Case Temperature T C ( C) 10 0 Maximum Safe Operation Area I D max (Continuous) PW = ms 1 shot DC Operation (T C = C) PW = 0 ms 1 shot PW = 1 s 1 shot Ta = C 0. SK6 SK7 SK Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics V GS = V T C = C Pch = 0 W Drain to Source Voltage V DS (V) V DS = V T C = C Gate to Source Voltage V GS (V) 4

5 SK6, SK7, SK8 Drain to Source Saturation Voltage V DS (on) (V) V GD = 0 Drain to Source Saturation Voltage vs. Drain Current C 7 C T C = C Drain to Source Voltage V DS (V) Drain to Source Voltage vs. Gate to Source Voltage T C = C A A I D = 1 A Gate to Source Voltage V GS (V) Input Capacitance Ciss (pf) Input Capacitance vs. Gate Source Voltage V DS = V f = 1 MHz Gate to Source Voltage V GS (V) Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Frequency T C = C V DS = V I D = A k 30 k 0 k 300 k 1 M 3 M M Frequency f (Hz)

6 SK6, SK7, SK8 00 Switching Time vs. Drain Current Switching Time ton,toff (ns) t on t off Switching Time Test Circuit Output R L = Ω Input PW = 0µs duty ratio = 1 % 0 Ω 0 V Input Waveforms 90 % % t on t off Output % 90 % 6

7 1.6 ± 0.3 φ3. ± 0..0 ± ± Unit: mm Max ± ± ± ± ± ± 0..4 ± 0. Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P Conforms.0 g

8 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi s or any third party s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party s rights, including intellectual property rights, in connection with use of the information contained in this document.. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., -6-, Ohte-machi, Chiyoda-ku, Tokyo , Japan Tel: Tokyo (03) Fax: (03) URL NorthAmerica : Europe : Asia (Singapore) : Asia (Taiwan) : Asia (HongKong) : Japan : For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 9134 Tel: <1> (408) Fax: <1>(408) Hitachi Europe GmbH Electronic components Group Dornacher Stra e 3 D-86 Feldkirchen, Munich Germany Tel: <49> (89) Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (168) 8000 Fax: <44> (168) 7783 Hitachi Asia Pte. Ltd. 16 Collyer Quay #0-00 Hitachi Tower Singapore Tel: 3-0 Fax: Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei () Tel: <886> () Fax: <886> () Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <8> () Fax: <8> () Telex: 4081 HITEC HX Copyright ' Hitachi, Ltd., All rights reserved. Printed in Japan.

Unit: mm Max Max Max Min 5.06 Max Min ± ± 0.10

Unit: mm Max Max Max Min 5.06 Max Min ± ± 0.10 19.20 20.00 Max 16 9 Unit: mm 6.30 7.40 Max 1 1.3 8 1.11 Max 2.54 ± 0.25 0.48 ± 0.10 0.51 Min 2.54 Min 5.06 Max 7.62 0.25 + 0.13 0.05 0 15 Hitachi Code JEDEC EIAJ Weight (reference value) DP-16 1.07 g

More information

HD61203U. (Dot Matrix Liquid Crystal Graphic Display 64-Channel Common Driver)

HD61203U. (Dot Matrix Liquid Crystal Graphic Display 64-Channel Common Driver) (Dot Matrix Liquid Crystal Graphic Display 64-Channel Common Driver) ADE-207-274(Z) '99.9 Rev. 0.0 Description The HD61203U is a common signal driver for dot matrix liquid crystal graphic display systems.

More information

Old Company Name in Catalogs and Other Documents

Old Company Name in Catalogs and Other Documents To our customers, Old Company Name in Catalogs and Other Documents On April st,, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all

More information

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 TPC811 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC811 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due

More information

Features. Symbol JEDEC TO-220AB

Features. Symbol JEDEC TO-220AB Data Sheet June 1999 File Number 2253.2 3A, 5V,.4 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching

More information

SSM3K335R SSM3K335R. 1. Applications. 2. Features. 3. Packaging and Pin Configuration. 2012-07-19 Rev.3.0. Silicon N-Channel MOS (U-MOS -H)

SSM3K335R SSM3K335R. 1. Applications. 2. Features. 3. Packaging and Pin Configuration. 2012-07-19 Rev.3.0. Silicon N-Channel MOS (U-MOS -H) MOSFETs Silicon N-Channel MOS (U-MOS-H) SSM3K335R SSM3K335R 1. Applications Power Management Switches DC-DC Converters 2. Features (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance : R DS(ON)

More information

DATA SHEET N-CHANNEL MOSFET FOR SWITCHING

DATA SHEET N-CHANNEL MOSFET FOR SWITCHING DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK159A N-CHANNEL MOSFET FOR SWITCHING FEATURES Directly driven by ICs having a 5 V power source. Not necessary to consider driving current because of its high input

More information

TPN4R712MD TPN4R712MD. 1. Applications. 2. Features. 3. Packaging and Internal Circuit. 2014-12 2015-04-21 Rev.4.0. Silicon P-Channel MOS (U-MOS )

TPN4R712MD TPN4R712MD. 1. Applications. 2. Features. 3. Packaging and Internal Circuit. 2014-12 2015-04-21 Rev.4.0. Silicon P-Channel MOS (U-MOS ) MOSFETs Silicon P-Channel MOS (U-MOS) TPN4R712MD TPN4R712MD 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) Low drain-source on-resistance: R DS(ON) = 3.8 mω (typ.)

More information

Silicon Planar Zener Diode for Surge Absorption and Stabilizer

Silicon Planar Zener Diode for Surge Absorption and Stabilizer Silicon Planar Zener Diode for Surge Absorption and Stabilizer Features These diodes are delivered taped. Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information REJ3G1512-2

More information

PMBFJ308; PMBFJ309; PMBFJ310

PMBFJ308; PMBFJ309; PMBFJ310 PMBFJ38; PMBFJ39; PMBFJ31 Rev. 3 23 July 24 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION The

More information

BSS84. 1. Product profile. P-channel enhancement mode vertical DMOS transistor. 1.1 General description. 1.2 Features. 1.

BSS84. 1. Product profile. P-channel enhancement mode vertical DMOS transistor. 1.1 General description. 1.2 Features. 1. Rev. 6 16 December 28 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor (DMOS) transistor in a small Surface-Mounted

More information

DATA SHEET. J174; J175; J176; J177 P-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS

DATA SHEET. J174; J175; J176; J177 P-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET P-channel silicon field-effect transistors File under Discrete Semiconductors, SC07 April 1995 DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92

More information

BUZ11. 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET. Features. [ /Title (BUZ1 1) /Subject. (30A, 50V, 0.040 Ohm, N- Channel. Ordering Information

BUZ11. 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET. Features. [ /Title (BUZ1 1) /Subject. (30A, 50V, 0.040 Ohm, N- Channel. Ordering Information Data Sheet June 1999 File Number 2253.2 [ /Title (BUZ1 1) /Subject (3A, 5V,.4 Ohm, N- Channel Power MOS- FET) /Autho r () /Keywords (Intersil Corporation, N- Channel Power MOS- FET, TO- 22AB ) /Creator

More information

Features Benefits Applications

Features Benefits Applications N9 N-Channel JFET Product Summary V GS(off) (V) V (BR)GSS Min (V) g fs Min SS Min (ma) 5 Features Benefits Applications Excellent High-Frequency Gain: Gps db @ MHz Very Low Noise: db @ MHz Very Low Distortion

More information

STN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description

STN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET Features Type V DSS (@Tjmax) Exceptional dv/dt capability Avalanche rugged technology 100% avalanche tested R DS(on) max STN3NF06L 60 V < 0.1

More information

200V, N-CHANNEL. Absolute Maximum Ratings. Features: www.irf.com 1 PD - 90370

200V, N-CHANNEL. Absolute Maximum Ratings. Features: www.irf.com 1 PD - 90370 PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF240 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF240 200V 0.18Ω 18A The HEXFET technology

More information

TSM2N7002K 60V N-Channel MOSFET

TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 5 @ V GS = 10V 100 60 5.5 @ V GS = 5V 100 Features Low On-Resistance ESD Protection High Speed Switching

More information

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 GT6J2 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT6J2 Current Resonance Inverter Switching Application Unit: mm Enhancement mode type High speed : t f =.6 μs (typ.) (I C = 6A) Low

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOS -H) TK80E07NE

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOS -H) TK80E07NE TK8E7NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOS -H) TK8E7NE E-Bike/UPS/Inverter Unit: mm Note : This product is designed for E-Bike / UPS / Inverter in China / India market. Low

More information

STP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

STP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06FP 60V

More information

STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET

STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STB80NF55-08/-1 STP80NF55-08 55 V 55 V

More information

STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET

STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

More information

STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06 60V

More information

OptiMOS Power-Transistor Product Summary

OptiMOS Power-Transistor Product Summary OptiMOS Power-Transistor Product Summary V DS 55 V R DS(on),max 4) 35 mω Features Dual N-channel Logic Level - Enhancement mode AEC Q11 qualified I D 2 A PG-TDSON-8-4 MSL1 up to 26 C peak reflow 175 C

More information

N-channel enhancement mode TrenchMOS transistor

N-channel enhancement mode TrenchMOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = V Low on-state resistance Fast switching I D = A High thermal cycling performance Low thermal resistance R DS(ON) mω (V GS = V) g s R DS(ON)

More information

OptiMOS TM Power-Transistor

OptiMOS TM Power-Transistor Type BSC28N6NS OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target

More information

OptiMOS TM 3 Power-Transistor

OptiMOS TM 3 Power-Transistor BSC47N8NS3 G OptiMOS TM 3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product Summary

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced

More information

OptiMOS TM 3 Power-Transistor

OptiMOS TM 3 Power-Transistor BSC7N1NS3 G OptiMOS TM 3 Power-Transistor Features Very low gate charge for high frequency applications Optimized for dc-dc conversion N-channel, normal level Excellent gate charge x R DS(on) product (FOM)

More information

OptiMOS 3 Power-Transistor

OptiMOS 3 Power-Transistor Type IPD6N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS

More information

N-channel enhancement mode MOS transistor

N-channel enhancement mode MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d V DS = V Fast switching Logic level compatible I D =.5 A Subminiature surface mount package R DS(ON) 5 mω (V GS =.5 V) g s V GS(TO).4 V

More information

STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT

STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT Table 1: General Features STGW40NC60V 600 V < 2.5 V 50 A HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY

More information

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM A M A A December 995 SEMICONDUCTOR RFG7N6, RFP7N6, RFS7N6, RFS7N6SM 7A, 6V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Features 7A, 6V r DS(on) =.4Ω Temperature Compensated PSPICE Model

More information

BSN20. 1. Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor

BSN20. 1. Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor Rev. 3 26 June 2 Product specification. Description in a plastic package using TrenchMOS technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible

More information

IRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings

IRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF150 100V 0.055Ω 38A IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543]

More information

IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET

IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE V DSS R DS(on) I D IRF740 400 V < 0.55 Ω 10 A TYPICAL R DS (on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY

More information

P-channel enhancement mode MOS transistor

P-channel enhancement mode MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage s V DS = - V Fast switching Logic level compatible I D = -.47 A Subminiature surface mount g package R DS(ON). Ω (V GS =.5 V) GENERAL DESCRIPTION

More information

SIPMOS Small-Signal-Transistor

SIPMOS Small-Signal-Transistor SIPMOS Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS V R DS(on),max 3.5 Ω I DSS,min.4 A Available with V GS(th) indicator on reel Pb-free lead plating; RoHS

More information

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type

More information

BIPOLAR ANALOG INTEGRATED CIRCUIT

BIPOLAR ANALOG INTEGRATED CIRCUIT DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT μpc823tu SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μpc823tu is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed as low noise

More information

OptiMOS 3 Power-Transistor

OptiMOS 3 Power-Transistor Type IPD36N4L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS

More information

STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP6N60FI 600 V < 1.2 Ω 3.8 A TYPICAL R DS(on) =1Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT

More information

Symbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 50 V V DGR Drain- gate Voltage (R GS =20kΩ) 50 V

Symbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 50 V V DGR Drain- gate Voltage (R GS =20kΩ) 50 V BUZ71A N - CHANNEL 50V - 0.1Ω - 13A TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) I D BUZ71A 50 V < 0.12 Ω 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT

More information

MOSFET N-channel enhancement switching transistor IMPORTANT NOTICE. http://www.philips.semiconductors.com use http://www.nxp.com

MOSFET N-channel enhancement switching transistor IMPORTANT NOTICE. http://www.philips.semiconductors.com use http://www.nxp.com Rev. 3 21 November 27 Product data sheet Dear customer, IMPORTANT NOTICE As from October 1st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets

More information

STP55NF06L STB55NF06L - STB55NF06L-1

STP55NF06L STB55NF06L - STB55NF06L-1 General features STP55NF06L STB55NF06L - STB55NF06L-1 N-channel 60V - 0.014Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II Power MOSFET Type V DSS R DS(on) I D STP55NF06L 60V

More information

Old Company Name in Catalogs and Other Documents

Old Company Name in Catalogs and Other Documents To our customers, Old Company Name in Catalogs and Other Documents On April 1 st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took

More information

AOT402 N-Channel Enhancement Mode Field Effect Transistor

AOT402 N-Channel Enhancement Mode Field Effect Transistor AOT42 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT42 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable

More information

CoolMOS TM Power Transistor

CoolMOS TM Power Transistor CoolMOS TM Power Transistor Features New revolutionary high voltage technology Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rated Product

More information

STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE V DSS R DS(on) I D STP62NS04Z CLAMPED

More information

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION TO-263 TO-25 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast

More information

BIPOLAR ANALOG INTEGRATED CIRCUIT

BIPOLAR ANALOG INTEGRATED CIRCUIT DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT μpc8tk SiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The μpc8tk is a silicon germanium carbon (SiGe:C) monolithic integrated circuit

More information

STP10NK80ZFP STP10NK80Z - STW10NK80Z

STP10NK80ZFP STP10NK80Z - STW10NK80Z STP10NK80ZFP STP10NK80Z - STW10NK80Z N-channel 800V - 0.78Ω - 9A - TO-220/FP-TO-247 Zener-protected supermesh TM MOSFET General features Type V DSS R DS(on) I D Pw STP10NK80Z 800V

More information

MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G. JFET Switching Transistors. N Channel

MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G. JFET Switching Transistors. N Channel LT1G, SLT1G, LT1G, LT1G JFET Switching Transistors NChannel Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable

More information

SMPS MOSFET. V DSS Rds(on) max I D

SMPS MOSFET. V DSS Rds(on) max I D Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 92004 IRF740A HEXFET Power MOSFET V DSS Rds(on) max I D 400V 0.55Ω A Benefits

More information

Symbol Parameter Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive

Symbol Parameter Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive BUZ11 N - CHANNEL 50V - 0.03Ω - 30A -TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) I D BUZ11 50 V < 0.04 Ω 30 A TYPICAL R DS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT

More information

STD30NF06L N-CHANNEL 60V Ω - 35A DPAK/IPAK STripFET POWER MOSFET

STD30NF06L N-CHANNEL 60V Ω - 35A DPAK/IPAK STripFET POWER MOSFET N-CHANNEL 60V - 0.022Ω - 35A DPAK/IPAK STripFET POWER MOSFET TYPE V DSS R DS(on) I D STD30NF06L 60 V

More information

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 2SA12 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA12 Power Amplifier Applications Power Switching Applications Unit: mm Low Collector saturation voltage: V CE (sat) =.5 V (max) (I C

More information

IRF840. 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002

IRF840. 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002 IRF84 Data Sheet January 22 8A, 5V,.85 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed

More information

Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 50 V V DGR Drain- gate Voltage (R GS = 20 kω) 50 V

Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 50 V V DGR Drain- gate Voltage (R GS = 20 kω) 50 V BUZ11 N - CHANNEL 50V - 0.03Ω - 33A TO-220 STripFET MOSFET TYPE V DSS R DS(on) I D BUZ11 50 V < 0.04 Ω 33 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY

More information

Features. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N8F6 110N8F6 TO-220 Tube

Features. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N8F6 110N8F6 TO-220 Tube N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max I D P TOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W TO-220

More information

60 V, 350 ma N-channel Trench MOSFET

60 V, 350 ma N-channel Trench MOSFET Rev. 1 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) 2N2219A 2N2222A DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed

More information

5A 3A. Symbol Parameter Value Unit

5A 3A. Symbol Parameter Value Unit STP5NA50 STP5NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP5NA50 STP5NA50FI 500 V 500 V

More information

STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET

STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type V DSS R DS(on) I D STW34NB20 200 V < 0.075 Ω 34 A FEATURES SUMMARY TYPICAL R DS(on) = 0.062 Ω EXTREMELY

More information

IRF510. 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002

IRF510. 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002 IRF5 Data Sheet January 22 5.6A, V,.5 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed

More information

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) PD 9399A AUTOMOTIVE MOSFET Typical Applications Electric Power Steering (EPS) Antilock Braking System (ABS) Wiper Control Climate Control Power Door Benefits Advanced Process Technology Ultra Low OnResistance

More information

P-Channel 1.25-W, 1.8-V (G-S) MOSFET

P-Channel 1.25-W, 1.8-V (G-S) MOSFET Si5DS P-Channel.5-W,.-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = -.5 V ±.5 -.7 at V GS = -.5 V ±. at V GS = -. V ± FEATURES Halogen-free According to IEC 9-- Available TrenchFET

More information

N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. BF91 Applications Input- and mixer stages especially for FM- and VHF TV-tuners

More information

CD4511BM CD4511BC BCD-to-7 Segment Latch Decoder Driver

CD4511BM CD4511BC BCD-to-7 Segment Latch Decoder Driver CD4511BM CD4511BC BCD-to-7 Segment Latch Decoder Driver General Description The CD4511BM CD4511BC BCD-to-seven segment latch decoder driver is constructed with complementary MOS (CMOS) enhancement mode

More information

2N5460, 2N5461, 2N5462. JFET Amplifier. P Channel Depletion. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS

2N5460, 2N5461, 2N5462. JFET Amplifier. P Channel Depletion. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS 2N546, 2N5461, JFET Amplifier PChannel Depletion Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Drain Gate Voltage V DG 4 Vdc Reverse Gate Source Voltage V GSR 4 Vdc Forward

More information

STB75NF75 STP75NF75 - STP75NF75FP

STB75NF75 STP75NF75 - STP75NF75FP STB75NF75 STP75NF75 - STP75NF75FP N-channel 75V - 0.0095Ω - 80A - TO-220 - TO-220FP - D 2 PAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STB75NF75 75V

More information

DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS

DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET N-channel silicon field-effect transistors Supersedes data of April 995 996 Jul BF5A; BF5B; BF5C FEATURES Interchangeability of drain and source connections Frequencies

More information

IRF640, RF1S640, RF1S640SM

IRF640, RF1S640, RF1S640SM IRF64, RFS64, RFS64SM Data Sheet January 22 8A, 2V,.8 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed,

More information

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated

More information

SMPS MOSFET. V DSS R DS (on) max I D

SMPS MOSFET. V DSS R DS (on) max I D Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 93773A IRF820A HEXFET Power MOSFET V DSS R DS (on) max I D 500V 3.0Ω 2.5A Benefits

More information

TLP227GA, TLP227GA-2

TLP227GA, TLP227GA-2 TOSHIBA Photocoupler Photo Relay TLP7GA, TLP7GA- Modem Telecommunications PBXs Unit: mm The Toshiba TLP7GA series consist of a gallium arsenide infrared-emitting diode optically coupled to a photo-mosfet

More information

IRF6201PbF. HEXFET Power MOSFET V DS 20 V. R DS(on) max. 2.75 mω. Q g (typical) 130 nc 27 A. Absolute Maximum Ratings

IRF6201PbF. HEXFET Power MOSFET V DS 20 V. R DS(on) max. 2.75 mω. Q g (typical) 130 nc 27 A. Absolute Maximum Ratings PD - 97500A IRF620PbF V DS 20 V HEXFET Power MOSFET R DS(on) max (@ = 4.5V) 2.45 mω 6 R DS(on) max (@ = 2.5V) 2.75 mω 6 6 Q g (typical) 30 nc * SO-8 I D (@T A = 25 C) 27 A Applications OR-ing or hot-swap

More information

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

J309, J310. N Channel Depletion. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

J309, J310. N Channel Depletion. Pb Free Packages are Available* Features.  MAXIMUM RATINGS MARKING DIAGRAM J9, Preferred Device JFET VHF/UHF Amplifiers NChannel Depletion Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V DS 25 Vdc Gate Source Voltage V GS

More information

DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING

DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING DATA SHEET SILICON POWER TRANSISTOR 2SA1010 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SA1010 is a mold power transistor developed for highvoltage high-speed switching,

More information

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

Features 1.7 A, 20 V. R DS(ON) Symbol Parameter Ratings Units

Features 1.7 A, 20 V. R DS(ON) Symbol Parameter Ratings Units N-Channel.5V Specified PowerTrench TM MOSFET April 999 General Description This N-Channel.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially

More information

DATA SHEET. BF998; BF998R Silicon N-channel dual-gate MOS-FETs DISCRETE SEMICONDUCTORS

DATA SHEET. BF998; BF998R Silicon N-channel dual-gate MOS-FETs DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET Silicon N-channel dual-gate MOS-FETs Supersedes data of April 99 File under Discrete Semiconductors, SC7 996 Aug FEATURES Short channel transistor with high forward transfer

More information

DISCONTINUED. Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN4015LK3-13 N4015L ,500

DISCONTINUED. Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN4015LK3-13 N4015L ,500 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V (BR)DSS 40V T A = 25 C 5mΩ @ = V 20.8A 20mΩ @ = 4.5V 8.0A Description and Applications This new generation MOSFET has been designed to minimize the

More information

Features -2.4A -1.8A. Part Number Case Packaging DMC6070LND-7 POWERDI ,000/Tape & Reel DMC6070LND-13 POWERDI ,000/Tape & Reel

Features -2.4A -1.8A. Part Number Case Packaging DMC6070LND-7 POWERDI ,000/Tape & Reel DMC6070LND-13 POWERDI ,000/Tape & Reel YYWW ADVANCED NEW PRODUCT INFORMATION COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET POWERDI Product Summary Device V (BR)DSS R DS(ON) max Q 6V Q -6V I D max T A = +5 C 85mΩ @ V = V 3.A mω @ V = 4.5V.7A 5mΩ

More information

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching

More information

OptiMOS 2 Small-Signal-Transistor

OptiMOS 2 Small-Signal-Transistor OptiMOS 2 Small-Signal-Transistor Features N-channel Enhancement mode Super Logic level (2.5V rated) Avalanche rated Product Summary V DS 2 V R DS(on),max V GS =4.5 V 14 mω V GS =2.5 V 25 I D 1.5 A Qualified

More information

Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM - 600 V

Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM - 600 V TS985C6R Low-Loss Fast Recovery Diode Maximum Rating and Characteristics Maximum ratings (at Ta=25 C unless otherwise specified.) Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM

More information

Note: The product(s) described herein should not be used for any other application.

Note: The product(s) described herein should not be used for any other application. Discrete IGBTs Silicon N-Channel IGBT GT50JR22 GT50JR22 1. Applications Dedicated to Current-Resonant Inverter Switching Applications The product(s) described herein should not be used for any other application.

More information

DISCONTINUED. Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN4009LK3-13 N4009L ,500

DISCONTINUED. Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN4009LK3-13 N4009L ,500 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V (BR)DSS 40V R DS(on) T A = 25 C 8.5mΩ @ = V 27.6A 4mΩ @ = 4.5V 2.5A Description and Applications This new generation MOSFET has been designed to

More information

Features G D. TO-220 FQP Series

Features G D. TO-220 FQP Series FQP33N10 FQP33N10 100V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,

More information

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

Power MOSFET FEATURES. IRF740APbF SiHF740A-E3 IRF740A SiHF740A

Power MOSFET FEATURES. IRF740APbF SiHF740A-E3 IRF740A SiHF740A Power MOSFET PRODUCT SUMMARY V DS (V) 400 R DS(on) ( ) = 0 V 0.55 Q g (Max.) (nc) 36 Q gs (nc) 9.9 Q gd (nc) 6 Configuration Single D TO220AB G FEATURES Low Gate Charge Q g Results in Simple Drive Requirement

More information

C Storage temperature Tstg -40 ~ 125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min. 2500 VAC Screw torque

C Storage temperature Tstg -40 ~ 125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min. 2500 VAC Screw torque 2MBIVA-6-5 IGBT MODULE (V series) 6V / A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier

More information

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 5.0 V 0.077 Q g (Max.) (nc) 64 Q gs (nc) 9.4 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel

More information

HEXFET MOSFET TECHNOLOGY

HEXFET MOSFET TECHNOLOGY PD-90711C POWER MOSFET THRU-HOLE (TO-254AA) IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFMG50 2.0Ω 5.6A HEXFET MOSFET technology is the key to International

More information

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.077 Q g (Max.) (nc) 72 Q gs (nc) 11 Q gd (nc) 32 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET

More information

OptiMOS -3 Small-Signal-Transistor

OptiMOS -3 Small-Signal-Transistor BSS66N OptiMOS -3 Small-Signal-Transistor Features N-channel Enhancement mode Logic level (.5V rated) Avalanche rated Product Summary V DS 6 V R DS(on),max V GS = V 6 mw V GS =.5 V 9 I D 3. A Qualified

More information

AP4511GM Pb Free Plating Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp.

AP4511GM Pb Free Plating Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. AP5GM Pb Free Plating Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BV DSS 35V Low On-resistance D D D R DS(ON) 5mΩ D D D D D Fast

More information

STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP

STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V - 1.76 Ω - 4 A SuperMESH Power MOSFET DPAK - D 2 PAK - IPAK - I 2 PAK - TO-220 - TO-220FP Features Type V DSS R DS(on)

More information