DISCRETE SEMICONDUCTORS DATA SHEET. BFQ34 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

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1 DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC4 September 995

2 DESCRIPTION PINNING NPN transistor encapsulated in a 4 lead SOTA envelope with a ceramic cap. All leads are isolated from the stud. It is primarily intended for driver and final stages in MATV system amplifiers. It is also suitable for use in low power band IV and V equipment. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. The device also features high output voltage capabilities. PIN DESCRIPTION Code: / collector emitter 3 base 4 emitter lfpage 4 3 Top view MBK87 Fig. SOTA. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CBO collector-base voltage open emitter 5 V V CEO collector-emitter voltage open base 8 V I C collector current 5 ma P tot total power dissipation up to T c = 6 C.7 W f T transition frequency I C = 5 ma; V CE = 5 V; f = 5 MHz 4 GHz V o output voltage I C = ma; V CE = 5 V; R L =75Ω; T amb = 5 C; d im = 6 db f (p+q-r) = MHz. V P L output power at db gain compression I C = ma; V CE = 5 V; R L =75Ω; f = 8 MHz; T amb = 5 C ITO third order intercept point I C = ma; V CE = 5 V; R L =75Ω; T amb = 5 C 6 dbm 45 dbm Product and environmental safety - toxic materials WARNING This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. September 995

3 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter 5 V V CEO collector-emitter voltage open base 8 V V EBO emitter-base voltage open collector V I C DC collector current 5 ma P tot total power dissipation up to T c = 6 C.7 W T stg storage temperature 65 5 C T j junction temperature C THERMAL RESISTANCE SYMBOL PARAMETER THERMAL RESISTANCE R th j-c thermal resistance from junction to case 5 K/W September 995 3

4 CHARACTERISTICS T j = 5 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector cut-off current I E = ; V CB = 5 V µa h FE DC current gain I C = 75 ma; V CE = 5 V 5 7 I C = 5 ma; V CE = 5 V 5 7 f T transition frequency I C = 75 ma; V CE = 5 V; f = 5 MHz GHz I C = 5 ma; V CE = 5 V; GHz f = 5 MHz C c collector capacitance I E = ; V CB = 5 V; f = MHz.75 pf C e emitter capacitance I C = ; V EB =.5 V; f = MHz pf C re feedback capacitance I C = ma; V CE = 5 V; f = MHz;.35 pf T amb =5 C C c-s collector-stud capacitance note.8 pf F noise figure (see Fig.) I C = ma; V CE = 5 V; f = 5 MHz; T amb =5 C 8 db G UM maximum unilateral power gain (note ) I C = ma; V CE = 5 V; f = 5 MHz; T amb =5 C Notes. Measured with grounded emitter and base.. G UM is the maximum unilateral power gain, assuming S is zero and 3. d im = 6 db (DIN 454B, par. 6.3.: 3-tone); I C = ma; V CE = 5 V; R L = 75 Ω; T amb = 5 C; V p = V O at d im = 6 db; f p = MHz; V q = V O 6 db; f q = 83.5 MHz; V r = V O 6 db; f r = 85.5 MHz; measured at f (p+q r) = MHz. 4. I C = ma; V CE = 5 V; T amb = 5 C; R L = 75 Ω; measured at f = 8 MHz. 5. I C = ma; V CE = 5 V; R L = 75 Ω; T amb = 5 C; P p = ITO 6 db; f p = 8 MHz; P q = ITO 6 db; f q = 8 MHz; measured at f (q p) = 8 MHz and at f (p q) = 799 MHz. 6.3 db V o output voltage Figs and 7 and note 3. V P L output power at db gain note 4 6 dbm compression (see Fig.) ITO third order intercept point (see Fig.) note 5 45 dbm S G UM = log db. S S September 995 4

5 handbook, halfpage MBB36 handbook, halfpage. nf V BB. nf V CC h FE input 75 Ω L nf L Ω nf DUT nf output 75 Ω pf 4 Ω 4 Ω MEA I C (ma) f = 4 to 86 MHz; L = L = 5 µh Ferroxcube coil. V CE = 5 V; T j =5 C. Fig. Intermodulation distortion MATV test circuit. Fig.3 DC current gain as a function of collector current. 6 handbook, halfpage Cc (pf) MEA3 8 handbook, halfpage f T (GHz) 6 MBB V (V) CB I C (ma) I E = ; f = MHz; T j =5 C. V CE = 5 V; f = 5 MHz; T j =5 C. Fig.4 Collector capacitance as a function of collector-base voltage. Fig.5 Transition frequency as a function of collector current. September 995 5

6 4 handbook, halfpage gain (db) 3 MEA39 handbook, halfpage d im (db) 3 MEA3 4 5 G UM Is I 6 f (GHz) I C (ma) I c = ma; V CE = 5 V; T amb =5 C. V o =. V; V CE = 5 V; f (p+q r) = MHz Fig.6 Gain as a function of frequency. Fig.7 Intermodulation distortion as a function of collector current. September 995 6

7 handbook, full pagewidth.5 + j j.. MHz I c = ma; V CE = 5 V; T amb =5 C. Z o =5Ω. MEA35 Fig.8 Common emitter input reflection coefficient (S ). handbook, full pagewidth 9 MHz ϕ ϕ MEA37 I c = ma; V CE = 5 V; T amb =5 C. Fig.9 Common emitter forward transmission coefficient (S ). September 995 7

8 handbook, full pagewidth MHz.. + ϕ ϕ I c = ma; V CE = 5 V; T amb =5 C. 9 MEA38 Fig. Common emitter reverse transmission coefficient (S ). handbook, full pagewidth j..5 5 j 8 5. MHz 5.5 MEA36 I c = ma; V CE = 5 V; T amb =5 C. Z o =5Ω. Fig. Common emitter output reflection coefficient (S ). September 995 8

9 PACKAGE OUTLINE Studded ceramic package; 4 leads SOTA D ceramic BeO A Q metal c N D A N D w M A M W N 3 X M H detail X b L 4 α 3 H 5 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) N UNIT A b c D D D H L M M N N 3 Q W max mm UNC w.38 α 9 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOTA September 995 9

10 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 995

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