2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor

Transcription

1 August 06 N7000 / / NS700A N-Channel Enhancement Mode Field Effect Transistor Features High ensity Cell esign for Low R S(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability Ordering Information TO-9. Source. Gate 3. rain G SOT-3 (TO-36AB) /NS700A escription These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, MOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 ma C and can deliver pulsed currents up to A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. S G S N7000 / / NS700A N-Channel Enhancement Mode Field Effect Transistor Part Number Marking Package Packing Method Min Order Qty / Immediate Pack Qty N7000 N7000 TO-9 3L Bulk 0000 / 000 N7000_74Z N7000 TO-9 3L Ammo 000 / 000 N7000_75Z N7000 TO-9 3L Tape and Reel 000 / 000 N7000_6Z N7000 TO-9 3L Tape and Reel 000 / SOT-3 3L Tape and Reel 3000 / 3000 NS700A 7 SOT-3 3L Tape and Reel 3000 / Fairchild Semiconductor Corporation N7000 / / NS700A Rev..0

2 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T C = 5 C unless otherwise noted. Symbol Thermal Characteristics Values are at T C = 5 C unless otherwise noted. Electrical Characteristics Parameter Values are at T C = 5 C unless otherwise noted. Value N7000 NS700A V SS rain-to-source Voltage 60 V V GR rain-gate Voltage (R GS M 60 V V GSS Gate-Source Voltage - Continuous ±0 V Gate-Source Voltage - Non Repetitive (tp < 50 S) ±40 I Maximum rain Current - Continuous ma Maximum rain Current - Pulsed P Maximum Power issipation erated above 5 C mw mw/ C T J, T STG Operating and Storage Temperature Range -55 to to 50 C T L Maximum Lead Temperature for Soldering Purposes, /6-inch from Case for 0 Seconds 300 C Symbol Parameter Value N7000 NS700A R JA Thermal Resistance, Junction to Ambient C/W Symbol Parameter Conditions Type Min. Typ. Max. Unit Off Characteristics rain-source Breakdown BV SS V Voltage GS = 0 V, I = 0 A All 60 V I SS I GSSF I GSSR Zero Gate Voltage rain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Unit Unit V S = 48 V, V GS = 0 V N7000 A V S = 48 V, V GS = 0 V, ma T C = 5 C V S = 60 V, V GS = 0 V A V NS700A S = 60 V, V GS = 0 V, ma T C = 5 C V GS = 5 V, V S = 0 V V GS = 0 V, V S = 0 V V GS = -5 V, V S = 0 V V GS = -0 V, V S = 0 V N7000 NS700A N7000 NS700A 0 na 00 na -0 na -00 na N7000 / / NS700A N-Channel Enhancement Mode Field Effect Transistor 998 Fairchild Semiconductor Corporation N7000 / / NS700A Rev..0

3 Electrical Characteristics (Continued) Symbol Parameter Conditions Type Min. Typ. Max. Unit On Characteristics V GS(th) Gate Threshold Voltage V S = V GS, I = ma N V R S(ON) Static rain-source On-Resistance V S = V GS, I = 50 A V GS = 0 V, I = 500 ma NS700A N V GS = 0 V, I = 500 ma, T C = 5 C.9 9 V GS = 4.5 V, I = 75 ma V GS = 0 V, I = 500 ma. 7.5 V GS = 0 V, I = 500 ma, T C = 00 C V GS = 5 V, I = 50 ma V GS = 5 V, I = 50 ma, T C = 00 C V GS = 0 V, NS700A I = 500 ma. V GS = 0 V, I = 500 ma, T C = 5 C 3.5 V GS = 5 V, I = 50 ma.7 3 V GS = 5 V, I = 50 ma, T C = 5 C.8 5 V S(ON) rain-source On-Voltage V GS = 0 V, N7000 I = 500 ma V GS = 4.5 V, I = 75 ma V GS = 0 V, I = 500 ma V GS = 5.0 V, I = 50 ma V GS = 0 V, I = 500 ma NS700A 0.6 V GS = 5.0 V, I = 50 ma 0.09 I (ON) On-State rain Current V GS = 4.5 V, N7000 V S = 0 V V GS = 0 V, V S V S(on) V GS = 0 V, NS700A V S V S(on) g FS Forward Transconductance V S = 0 V, I = 00 ma V S V S(ON), I = 00 ma V S V S(ON), I = 00 ma N7000 NS700A V ma ms N7000 / / NS700A N-Channel Enhancement Mode Field Effect Transistor 998 Fairchild Semiconductor Corporation N7000 / / NS700A Rev..0 3

4 Electrical Characteristics (Continued) Symbol Parameter Conditions Type Min. Typ. Max. Unit ynamic Characteristics C iss Input Capacitance V S = 5 V, V GS = 0 V, All 0 50 pf C oss Output Capacitance f =.0 MHz All 5 C rss Reverse Transfer Capacitance All 4 5 t on Turn-On Time V = 5 V, R L = 5, N7000 ns I = 500 ma, 0 V GS = 0 V, R GEN = 5 V = 30 V, R L = 50, I = 00 ma, V GS = 0 V, R GEN = 5 t off Turn-Off Time V = 5 V, R L = 5, I = 500 ma, V GS = 0 V, R GEN = 5 V = 30 V, R L = 50, I = 00 ma, V GS = 0 V, R GEN = 5 Note:. Pulse test : Pulse Width 300 μs, uty Cycel %. NS700A 0 N NS700A 0 rain-source iode Characteristics and Maximum Ratings I S Maximum Continuous rain-source iode Forward 5 ma Current NS700A 80 I SM Maximum Pulsed rain-source iode Forward 0.8 A Current NS700A.5 V rain-source iode S Forward Voltage V GS = 0 V, I S = 5 ma () V V GS = 0 V, NS700A I S = 400 ma () ns N7000 / / NS700A N-Channel Enhancement Mode Field Effect Transistor 998 Fairchild Semiconductor Corporation N7000 / / NS700A Rev..0 4

5 Typical Performance Characteristics R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE I, RAIN-SOURCE CURRENT (A).5 = 0V V GS V S, RAIN-SOURCE VOLTAGE (V V GS = 0V I = 500mA T, JUNCTION TEMPERATURE ( C) J Figure. On-Region Characteristics Figure 3. On-Resistance Variation with Temperature V = 0 S T J = -55 C N7000 / / NS700A C C R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE V th, N I, RAIN CURRENT (A) V GS =4.0V V GS T J = 5 C 5 C C Figure. On-Resistance Variation with Gate Voltage and rain Current I, RAIN CURRENT (A) Figure 4. On-Resistance Variation with rain Current and Temperature V S= V GS I = ma N7000 / / NS700A N-Channel Enhancement Mode Field Effect Transistor V, GATE TO SOURCE VOLTAGE (V GS Figure 5. Transfer Characteristics T, JUNCTION TEMPERATURE ( C) J Figure 6. Gate Threshold Variation with Temperature 998 Fairchild Semiconductor Corporation N7000 / / NS700A Rev..0 5

6 S Typical Performance Characteristics (Continued) BV NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE CAPACITANCE (pf) I = 50µA T, JUNCTION TEMPERATURE ( C) J V S, RAIN TO SOURCE VOLTAGE (V) V GS Figure 7. Breakdown Voltage Variation with Temperature f = MHz V GS = 0V Figure 9. Capacitance Characteristics R GEN V IN G V R L N7000 / / NS700A UT C iss C oss C rss V OUT I, REVERSE RAIN CURRENT (A) V GS, GA E-SOURCE VOLTAGE (V) V GS T J = 5 C 5 C -55 C V S, BOY IOE FORWAR VOLTAGE (V) Figure 8. Body iode Forward Voltage Variation with V S = 5V I =500mA 80mA mA Q g, ATE CHARGE (nc) Figure 0. Gate Charge Characteristics t d(on) Output, Vout Input, Vin t on 0% 50% tr 90% t d(off) 50% t off 90% 90% 0% t f Inverted N7000 / / NS700A N-Channel Enhancement Mode Field Effect Transistor S 0% Pulse Width Figure. Figure. Switching Waveforms 998 Fairchild Semiconductor Corporation N7000 / / NS700A Rev..0 6

7 Typical Performance Characteristics (Continued) r(t), NORMALIZE EFFECTIVETRANSIENT THERMAL RESISTANCE r(t), NORMALIZE EFFECTIVETRANSIENT THERMAL RESISTANCE t, TIME (sec) Figure 6. TO-9, N7000 Transient Thermal Response Curve Figure 3. N7000 Maximum Safe Operating Area Figure 5. NS7000A Maximum Safe Operating Area t, TIME (sec) R Figure 4. Maximum Safe Operating Area Figure. R R = (See atasheet) P(pk) t t TJ - TA = P * (t), uty Cycle = (See atasheet) TJ - TA = P * (t), uty Cycle N7000 / / NS700A N-Channel Enhancement Mode Field Effect Transistor 998 Fairchild Semiconductor Corporation N7000 / / NS700A Rev..0 7

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