Features D G. T A =25 o C unless otherwise noted. (Note 1a) 3.8. (Note 1b) 1.6
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1 6V P-Channel PowerTrench MOSFET March 25 General Description This 6V P-Channel MOSFET uses Fairchild s high voltage PowerTrench process. It has been optimized for power management applications. Applications DC/DC converter Power management Load switch Features 5 A, 6 V. R DS(ON) = V GS = V R DS(ON) = 3 V GS = 4.5 V Fast switching speed High performance trench technology for extremely low R DS(ON) High power and current handling capability S G D G S TO-252 D Absolute Maximum Ratings T A =25 o C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain-Source Voltage 6 V V GSS Gate-Source Voltage ±2 V I D Drain Current Continuous (Note 3) 5 A P D Pulsed (Note a) 45 Power Dissipation for Single Operation (Note ) 42 (Note a) 3.8 (Note b).6 T J, T STG Operating and Storage Junction Temperature Range 55 to +75 C Thermal Characteristics R θjc Thermal Resistance, Junction-to-Case (Note ) 3.5 C/W R θja Thermal Resistance, Junction-to-Ambient (Note a) 4 C/W R θja Thermal Resistance, Junction-to-Ambient (Note b) 96 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 3 6mm 25 units W 25 Fairchild Semiconductor Corporation Rev..4
2 Electrical Characteristics T A = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note ) W DSS I AR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Off Characteristics V DD = 3 V, I D = 4.5 A 9 mj 4.5 A BV DSS Drain Source Breakdown Voltage V GS = V, I D = 25 µa 6 V BVDSS T J Breakdown Voltage Temperature Coefficient I D = 25 µa, Referenced to 25 C 49 mv/ C I DSS Zero Gate Voltage Drain Current V DS = 48 V, V GS = V µa I GSSF Gate Body Leakage, Forward V GS = 2V, V DS = V na I GSSR Gate Body Leakage, Reverse V GS = 2 V, V DS = V na On Characteristics (Note 2) V GS(th) Gate Threshold Voltage V DS = V GS, I D = 25 µa.6 3 V VGS(th) T J Gate Threshold Voltage Temperature Coefficient I D = 25 µa, Referenced to 25 C 4 mv/ C R DS(on) Static Drain Source V GS = V, I D = 4.5 A 76 mω On Resistance V GS = 4.5 V, I D = 3.9 A 99 3 V GS = V,I D = 4.5 A,T J =25 C I D(on) On State Drain Current V GS = V, V DS = 5 V 2 A g FS Forward Transconductance V DS = 5 V, I D = 3 A 8 S Dynamic Characteristics C iss Input Capacitance V DS = 3 V, V GS = V, 759 pf C oss Output Capacitance f =. MHz 9 pf C rss Reverse Transfer Capacitance Switching Characteristics (Note 2) 39 pf t d(on) Turn On Delay Time V DD = 3 V, I D = A, 7 4 ns t r Turn On Rise Time V GS = V, R GEN = 6 Ω 2 ns t d(off) Turn Off Delay Time 9 34 ns t f Turn Off Fall Time 2 22 ns Q g Total Gate Charge V DS = 3V, I D = 4.5 A, 5 24 nc Q gs Gate Source Charge V GS = V 2.5 nc Q gd Gate Drain Charge 3. nc Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain Source Diode Forward Current 3.2 A V SD Drain Source Diode Forward Voltage V GS = V, I S = 3.2 A (Note 2).8.2 V Rev..4
3 Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) R θja = 4 C/W when mounted on a in 2 pad of 2 oz copper b) R θja = 96 C/W when mounted on a minimum pad. Scale : on letter size paper 2. Pulse Test: Pulse Width < 3µs, Duty Cycle < 2.% PD R 3. Maximum current is calculated as: DS(ON) where P D is maximum power dissipation at T C = 25 C and R DS(on) is at T J(max) and V GS = V. Package current limitation is 2A Rev..4
4 Typical Characteristics I D, DRAIN CURRENT (A) 5 V GS = -V -4.5V 2-6.V -4.V -3.5V V 3-2.5V V DS, DRAIN-SOURCE VOLTAGE (V) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = -3.5V -4.V -4.5V -5.V -6.V -V I D, DRAIN CURRENT (A) Figure. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2.4 R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = -4.5A V GS = -V R DS(ON), ON-RESISTANCE (OHM).3.2. T A = 25 o C T A = 25 o C I D = -2.3 A T J, JUNCTION TEMPERATURE ( o C) V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. I D, DRAIN CURRENT (A) V DS = -5V T A = -55 o C 25 o C 25 o C I S, REVERSE DRAIN CURRENT (A).. V GS = V T A = 25 o C 25 o C -55 o C V GS, GATE TO SOURCE VOLTAGE (V) V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Rev..4
5 Typical Characteristics V GS, GATE-SOURCE VOLTAGE (V) I D = -4.5A 8 V DS = -4V -3V 6-2V Q g, GATE CHARGE (nc) CAPACITANCE (pf) C ISS 2 C OSS C RSS V DS, DRAIN TO SOURCE VOLTAGE (V) f = MHz V GS = V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. I D, DRAIN CURRENT (A). R DS(ON) LIMIT V GS = -V SINGLE PULSE R θja = 96 o C/W T A = 25 o C.. DC s s ms -V DS, DRAIN-SOURCE VOLTAGE (V) ms ms µs P(pk), PEAK TRANSIENT POWER (W) t, TIME (sec) SINGLE PULSE R θja = 96 C/W T A = 25 C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D = SINGLE PULSE t, TIME (sec) P(pk) R θja (t) = r(t) + R θja R θja = 96 C/W t t 2 T J - T A = P * R θja (t) Duty Cycle, D = t / t 2 Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note b. Transient thermal response will change depending on the circuit board design. Rev..4
6
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Preliminary First Production Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make No Identification Needed Full Production changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. Obsolete Not In Production The datasheet is for reference information only. Rev. I77 Fairchild Semiconductor Corporation
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