2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) Complementary Silicon High Power Transistors

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1 (NPN), (NPN), MJ6 (PNP) and MJ6 are Preferred Devices Complementary Silicon HighPower Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dctodc converters, inverters, or for inductive loads requiring higher safe operating area than the N. Features CurrentGain I C = Adc f T =.8 MHz (Min) NPN =. MHz (Min) PNP Safe Operating Area Rated to 6 V and V, Respectively PbFree Packages are Available* MAXIMUM RATINGS (Note ) Rating Symbol Value Unit CollectorEmitter Voltage CollectorBase Voltage CollectorEmitter Voltage Base Reversed Biased V CEO 6 V CBO V CEV EmitterBase Voltage V EBO 7. Collector Current Continuous I C Adc Base Current I B 7. Adc Total Device T C = C Derate above C Total Device T C = C Derate above C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D.6 8 W W/ C T J, T stg 6 to + C Characteristics Symbol Max Max Unit Thermal Resistance, JunctiontoCase R JC..98 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Indicates JEDEC Registered Data. () *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 6, VOLTS, 8 WATTS MARKING DIAGRAMS G AYWW MEX TO4AA (TO) CASE 7 STYLE MJxG AYWW MEX = Device Code MJx = Device Code x = or 6 G = PbFree Package A = Assembly Location Y = Year WW = Work Week MEX = Country of Origin ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: /D

2 (NPN), (NPN), MJ6 (PNP) ELECTRICAL CHARACTERISTICS (T C = C unless otherwise noted) Î Characteristic Symbol Min Max Unit OFF CHARACTERISTICS (Note ) CollectorEmitter Sustaining Voltage (Note ) V (I C = madc, I B Î CEO(sus) 6 ÎÎ = ) Collector Cutoff Current I (V CE =, V BE(off) = ) Î CEO madc ÎÎ (V CE = 6, V BE(off) = ) ÎÎÎ.7 Collector Cutoff Current (Note ) Î I CEV ÎÎÎ. madc (V CEV = Rated Value, V BE(off) =. ) Collector Cutoff Current I (V CEV = Rated Value, V BE(off) =., Î CEV madc ÎÎ T C = C) ÎÎÎ 6. Emitter Cutoff Current Î I EBO ÎÎÎ. madc (V EB = 7., I C = ). SECOND BREAKDOWN (Note ) Second Breakdown Collector Current with Base Forward Biased Î I S/b Î Adc (t = s nonrepetitive).9 (V CE = 6 ). ÎÎÎ ON CHARACTERISTICS (Note and ) DC Current Gain h FE Î (I C = 4. Adc, V CE =. ) ÎÎÎ 7 (I C = 4. Adc, V CE = 4. ) 7 (I C = Adc, V CE Î = 4. ). CollectorEmitter Saturation Voltage V (I C = 4. Adc, I B = 4 madc) Î CE(sat) ÎÎ (I C = Adc, I B =. Adc) (I C = Adc, I B ÎÎ.. = 7. Adc). Î BaseEmitter On Voltage V (I C = 4. Adc, V CE = 4. ) Î BE(on).7 ÎÎ.8 DYNAMIC CHARACTERISTICS (Note ) CurrentGain Bandwidth Product, f T Î.8 (I C = Adc, V CE = 4., f = MHz) MJ6. ÎÎÎ 6. MHz 8 Output Capacitance Î C ob 6 ÎÎ (V CB =, I E =, f = MHz) ÎÎ 6 pf SWITCHING CHARACTERISTICS ( only) (Note ) RESISTIVE LOAD Î Delay Time ÎÎÎ Î Rise Time Î (V CC =, I C = 4. Adc, Î t r ÎÎÎ 4. s I B = I B =.4 Adc, Î Storage Time t Î p = s Duty Cycle % t s ÎÎ. s Î ÎÎ Fall Time 6.. Pulse Test: Pulse Width = s, Duty Cycle %.. Indicates JEDEC Registered Data. () t d t f s s

3 (NPN), (NPN), MJ6 (PNP) P D(AV), AVERAGE POWER DISSIPATION (W) MJ6 7 7 T C, CASE TEMPERATURE ( C) Figure. Power Derating h FE, DC CURRENT GAIN 7 7. T J = C C V CE = 4. V C..7 7 V CE, COLLECTOREMITTER VOLTAGE (VOLTS) T J = C I C = A 4 A 8 A.... I B, BASE CURRENT (AMP) Figure. DC Current Gain Figure. Collector Saturation Region V, VOLTAGE (VOLTS).... T C = C V I C /I B = V V CE = 4 V V I C /I B =..7 7 f, T CURRENTGAIN BANDWIDTH PRODUCT (MHz).. MJ6... I C, COLLECTOR CURRENT (AMPS) Figure 4. On Voltages Figure. CurrentGain Bandwidth Product

4 (NPN), (NPN), MJ6 (PNP) + V s V CC + V 7. SCOPE t, TIME ( s) μ 7.7 V CC = V I C /I B = T J = C t r V t r, t f ns DUTY CYCLE = % V N67... t d..7 7 Figure 6. Switching Times Test Circuit (Circuit shown is for NPN) Figure 7. TurnOn Time t, TIME ( s) μ t f V CC = I C /I B = I B = I B T J = C t s..7 7 I C, COLLECTOR CURRENT (AMPS) C, CAPACITANCE (pf) 4 C ib.. C ob V R, REVERSE VOLTAGE (VOLTS) T J = C MJ6 Figure 8. TurnOff Times Figure 9. Capacitances

5 , COLLECTOR CURRENT ( A) μ I C I C, COLLECTOR CURRENT (AMPS),. +. NPN V CE = V T J = C C REVERSE C (NPN), (NPN), MJ6 (PNP) I C = I CES FORWARD V BE, BASEEMITTER VOLTAGE (VOLTS) Figure., BONDING WIRE LIMIT THERMAL T C = C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 6 V CE, COLLECTOREMITTER VOLTAGE (VOLTS) Figure. Forward Bias Safe Operating Area COLLECTOR CUTOFF REGION s s ms ms dc, COLLECTOR CURRENT ( A) μ I C..... PNP V CE = V T J = C C REVERSE C I C = I CES FORWARD V BE, BASEEMITTER VOLTAGE (VOLTS) Figure. MJ6 BONDING WIRE LIMIT THERMAL T C = C (SINGLE PULSE) SECOND BREAKDOWN LIMIT +.4 ms ms Figure. Forward Bias Safe Operating Area + ms. 6 V CE, COLLECTOREMITTER VOLTAGE (VOLTS) dc There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe Operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures and is based on T C = C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to % but must be derated for temperature according to Figure. ORDERING INFORMATION G G MJ6 MJ6G Device Package Shipping TO4 TO4 (PbFree) TO4 TO4 (PbFree) TO4 TO4 (PbFree) Units / Tray Units / Tray

6 (NPN), (NPN), MJ6 (PNP) PACKAGE DIMENSIONS TO4 (TO) CASE 7 ISSUE Z V H E A N U Q C T SEATING PLANE D PL K (.) M T Q M Y M L G Y B NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, 98.. CONTROLLING DIMENSION: INCH.. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO4AA OUTLINE SHALL APPLY. INCHES MILLIMETERS DIM MIN MAX MIN MAX A. REF 9.7 REF B 6.67 C D E G.4 BSC.9 BSC H. BSC.46 BSC K L.66 BSC 6.89 BSC N.8 8 Q U.87 BSC BSC V (.) M T Y M STYLE : PIN. BASE. EMITTER CASE: COLLECTOR