Features: Characteristic Symbol Rating Unit. Collector-Emitter Voltage V CEO 100 Collector-Base Voltage I C

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1 Designed for use in general purpose power amplifier and switching applications. Features: Collector-Emitter Sustaining Voltage V CEO(sus) = 100V (Minimum) - TIP35C, TIP36C DC Current Gain h FE = 25 (Minimum) at I C = 1.5A. Current Gain-Bandwidth Product f T = 3.0MHz (Minimum) at I C = 1.0A. Pin 1. Base 2. Collector 3. Emitter Maximum Ratings Dimensions Minimum Maximum A B C D E F G H I J K L M N O P Dimensions : Millimetres NPN TIP35C PNP TIP36C 25 Ampere Complementary Silicon Power Transistors 100 Volts 125 Watts TO-247(3P) Characteristic Symbol Rating Unit Collector-Emitter Voltage V CEO 100 Collector-Base Voltage V CBO Emitter-Base Voltage V EBO 5.0 Collector Current-Continuous -Peak I C A Base Current I B 5.0 Total Power Dissipation at T c = 25 C P 125 W D Derate above 25 C 1.0 W/ C Operating and Storage Junction Temperature Range T J, T STG -65 to +150 C V Page 1 31/05/05 V1.0

2 Thermal Characteristics Characteristic Symbol Maximum Unit Thermal Resistance Junction to Case Rθjc 1.0 C/W Figure - 1 Power Derating P D, Power Dissipation (Watts) T C, Temperature ( C) Electrical Characteristics (T C = 25 C unless otherwise noted) Characteristic Symbol Minimum Maximum Unit OFF Characteristics Collector-Emitter Sustaining Voltage (1) (I C = 30mA, I B = 0) Collector Cut off Current (V CE = 60V, I B = 0) Collector Cut off Current (V CE = 100V, V EB = 0) Emitter Cut off Current (V EB = 5.0V, I C = 0) ON Characteristics (1) DC Current Gain (I C = 1.5A, V CE = 4.0V) (I C = 15A, V CE = 4.0V) V CEO(SUS) V I CEO I CES I EBO h FE ma Collector-Emitter Saturation Voltage (I C = 15A, I B = 1.5A) (I C = 25A, I B = 5.0A) Base-Emitter On Voltage (I C = 15A, V CE = 4.0V) (I C = 25A, V CE = 4.0V) V CE(sat) V BE(on) V Dynamic Characteristics Current Gain Bandwidth Product (2) (I C = 1.0mA, V CE = 10V, f TEST = 1MHz) Small-Signal Current Gain (I C = 1.0A, V CE = 10V, f = 1kHz) f T MHz h fe (1) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0% (2) f T = h fe f test Page 2 31/05/05 V1.0

3 Figure - 2 DC Current Gain Figure - 3 Turn-Off Time h FE, DC Current Gain t, Time (µs) Figure - 4 Turn-On time Figure - 5 Reverse Base Safe Operating Area t, Time (µs) I C Collector Current (AMP) Figure - 6 Active Region Safe Operating Area V CE, Collector Emitter (Volts) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate I C -V CE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure - 6 is based on T C = 25 C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycle to 10% but must be derated when T C 25 C, second breakdown limitations do not derate the same as thermal limitation. V CE, Collector Emitter (Volts) Page 3 31/05/05 V1.0

4 Specifiations I C(av) maximum (A) V CEO maximum (V) h FE minimum at I C = 15A P tot at 25 C (W) Package Type Part Number TO-247 NPN PNP TIP35C TIP36C Page 4 31/05/05 V1.0

5 Notes: International Sales Offices: AUSTRALIA Farnell InOne Tel No: Fax No: FINLAND Farnell InOne Tel No: Fax No: NETHERLANDS Farnell InOne Tel No: Fax No: SWITZERLAND Farnell InOne Tel No: Fax No: AUSTRIA Farnell InOne FRANCE Farnell InOne NEW ZEALAND Farnell InOne UK Farnell InOne Tel No: Tel No: Tel No: Tel No: Fax No: Fax No: Fax No: Fax No: BELGIUM Farnell InOne GERMANY Farnell InOne NORWAY Farnell InOne UK BuckHickman InOne Tel No: Tel No: Tel No: Fax No: Fax No: Fax No: BRAZIL Tel No: Fax No: HONG KONG Tel No: Fax No: PORTUGAL Farnell InOne Tel No: Fax No: UK CPC CHINA Tel No: Fax No: IRELAND Farnell InOne Tel No: Fax No: SINGAPORE Tel No: Fax No: export EXPORT Farnell InOne Tel No: Fax No: For enquiries from all other markets DENMARK Farnell InOne ITALY Farnell InOne SPAIN Farnell InOne Tel No: Tel No: Tel No: Fax No: Fax No: Fax No: ESTONIA Farnell InOne Tel No: Fax No: MALAYSIA Tel No: Fax No: SWEDEN Farnell InOne Tel No: Fax No: Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. Premier Farnell plc Page 5 31/05/05 V1.0

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