Low frequency transistor ( 20V, 5A)

Save this PDF as:
 WORD  PNG  TXT  JPG

Size: px
Start display at page:

Download "Low frequency transistor ( 20V, 5A)"

Transcription

1 2SB386 / 2SB42 / Transistors Low frequency transistor (, A) 2SB386 / 2SB42 / Features ) Low CE(sat). CE(sat) = 0.3 (Typ.) (IC/IB = 4A / 0.A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD98 / 2SD28 / 2SD97. External dimensions (Unit : mm) 2SB386 ± ± ±0. () ±0. (2) (3) 0.4±0. 0.±0. 0.4±0..±0..±0. 3.0± SB42.± Structure Epitaxial planar type PNP silicon transistor () Base ROHM : MPT3 (2) Collector EIAJ : SC-62 (3) Emitter Abbreviated symbol: BH ROHM : CPT3 EIAJ : SC-63 () Base (2) Collector (3) Emitter 6.8±0.2 2.± ± ± ± ±0.2 C0. 0.6± ± ±0. 0.±0..0±0.2 () (2) (3) 0.6Max..0 0.±0. 4.±0. () (2) (3) ±0. ROHM : AT () Emitter (2) Collector (3) Base Denotes hfe Rev.A /4

2 2SB386 / 2SB42 / Absolute maximum ratings () Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature 2SB386 2SB42 Symbol Limits Unit CBO CEO EBO IC PC Tj Tstg 30 6 A(DC) A(Pulse) 0. W 2 W 2 W W(Tc=) W 3 to C C Single pulse, Pw=ms 2 When mounted on a mm ceramic board. 3 Printed circuit board glass epoxy board.6 mm thick with copper plating mm 2 or larger. Electrical characteristics () Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Parameter voltage Transition frequency Output capacitance 2SB386,2SB42 Symbol BCBO BCEO BEBO ICBO IEBO CE(sat) hfe ft Cob Min Typ. Max. Unit Conditions µa µa 390 MHz pf IC= µa IC= ma IE= µa CB= EB= IC/IB= 4A/ 0.A CE= 2, IC= 0.A CE= 6, IE=mA, f=mhz CB=, IE=0A, f=mhz Measured using pulse current. Packaging specifications and hfe Package Taping Code T TL T2 Type hfe Basic ordering unit (pieces) SB386 PQR 2SB42 PQR QR hfe values are classified as follows : Item P Q R hfe 82 to 80 to to 390 Rev.A 2/4

3 2SB386 / 2SB42 / Electrical characteristic curves 2 0m 0m m m m m m 2m m Fig. CE= 2 Ta= C BASE TO EMITTER OLTAGE : BE () Grounded emitter propagation characteristics ma 4mA 40mA 3mA IB=0A COLLECTOR TO EMITTER OLTAGE : CE () Fig.2 30mA 2mA ma ma ma ma Grounded emitter output characteristics k 0 0 Fig.3 CE= DC current gain vs. 2 m 2m m k 0 0 Ta= C CE= m 2m m k 0 0 Ta= C CE= 2 m 2m m COLLECTOR SATURATION OLTAGE : CE(sat) () m m IC/IB=/ 40/ 30/ / Fig.4 DC current gain vs. Fig. DC current gain vs. Fig.6 COLLECTOR SATURATION OLTAGE : CE(sat) () Ta= C 0.0 2m m lc/lb= 2 COLLECTOR SATURATION OLTAGE : CE(sat) () m m lc/lb=30 Ta= C 2 COLLECTOR SATURATION OLTAGE : CE(sat) () m m Ta= C lc/lb=40 2 Fig.7 Fig.8 Fig.9 Rev.A 3/4

4 2SB386 / 2SB42 / COLLECTOR SATURATION OLTAGE : CE(sat) () lc/lb= 0.0 2m m Ta= C 2 TRANSEITION FREQUENCY : ft (MHz) CE= EMITTER CURRENT : IE (ma) COLLECTOR OUTPUT CAPACITANCE : Cob (pf) f=mhz IE=0A COLLECTOR TO BASE OLTAGE : CB () Fig. Fig. Gain bandwidth product vs. emitter current Fig.2 Collector output capacitance vs. collector-base voltage EMITTER INTPUT CAPACITANCE : Cib (pf) f=mhz IC=0A EMITTER TO BASE OLTAGE : EB () Fig.3 Emitter input capacitance vs. emitter-base voltage 2 0m 0m m m m m DC Pw=ms Pw=ms Single nonrepetitive pulse COLLECTOR TO EMITTER OLTAGE : CE () Fig.4 Safe operation area F(2SB42) Rev.A 4/4

5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex (Item 6) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix-Rev.

NPN General Purpose Transistor

NPN General Purpose Transistor NPN General Purpose Transistor Features 1) BCEO < 45 (IC=1mA) 2) Complements the BC857B. External dimensions (Unit : mm) Package, marking, and Packaging specifications Part No. Packaging type SST3 Marking

More information

AM radio / FM IF stereo system IC

AM radio / FM IF stereo system IC AM radio / FM IF stereo system IC The is a tuner system IC for electronic tuning for AM radios, FM IF, and MPX. It has been developed for Hi-Fi component applications. The MPX VCO circuit requires no adjustment,

More information

Taping code. Reel size (mm) 2SCR513P MPT3 4540 T100 180 12 1,000 NC

Taping code. Reel size (mm) 2SCR513P MPT3 4540 T100 180 12 1,000 NC 2SCR53P NPN.0A 50 Middle Power Transistor Datasheet Outline Parameter alue MPT3 CEO 50 I C.0A Base Collector Emitter Features ) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR53P 3)

More information

Thick film rectangular

Thick film rectangular Thick film rectangular (126 size: 1 / 4W) Features 1) Power rating of 1 / 4W 2) Highly reliable chip resistor Ruthenium oxide dielectric offers superior resistance to the elements. 3) Electrodes not corroded

More information

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 2SA12 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA12 Power Amplifier Applications Power Switching Applications Unit: mm Low Collector saturation voltage: V CE (sat) =.5 V (max) (I C

More information

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) SC8 Color TV Vertical Deflection Output Applications Color TV Class-B Sound Output Applications Unit: mm High breakdown voltage: V CEO = 6 V

More information

Applications All household electric appliances such as TV, DVD, air conditioner and audio equipment. SIDE VIEW RSIP-A3 (H5) SIDE VIEW RSIP-A3 (H13)

Applications All household electric appliances such as TV, DVD, air conditioner and audio equipment. SIDE VIEW RSIP-A3 (H5) SIDE VIEW RSIP-A3 (H13) IR Receiver Module are remote control receiver modules. Small-sized, light-weight, and low current consumption modules have been achieved by using resin mold. Center frequency 37.9kHz Applications All

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) High power NPN epitaxial planar bipolar transistor Preliminary data Features High breakdown voltage V CEO = 230 V Typical f T = 30 MHz Application Audio power amplifier Description This device is a NPN

More information

DISCRETE SEMICONDUCTORS DATA SHEET

DISCRETE SEMICONDUCTORS DATA SHEET DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 23 2001 Oct 10 FEATURES High current (max. 1 A) Low voltage (max. 80 V). APPLICATIONS Audio and video amplifiers. PINNING

More information

Power driver for CD-ROM/DVD

Power driver for CD-ROM/DVD Power driver for CD-ROM/DD BHF BHF BHF is an IC which includes a ch PWM driver for motor drive of CD-ROM and DD-ROM players, and a pressure circuit for power MOSFET gate drive in output stage. Power MOS

More information

DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan 26. 2001 Sep 21.

DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan 26. 2001 Sep 21. DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D87 PBSS554Z 4 V low V CEsat PNP transistor Supersedes data of 21 Jan 26 21 Sep 21 FEATURES Low collector-emitter saturation voltage High current capability Improved

More information

40 V, 200 ma NPN switching transistor

40 V, 200 ma NPN switching transistor Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) 2N2219A 2N2222A DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed

More information

45 V, 100 ma NPN/PNP general-purpose transistor

45 V, 100 ma NPN/PNP general-purpose transistor Rev. 4 18 February 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

More information

65 V, 100 ma PNP/PNP general-purpose transistor

65 V, 100 ma PNP/PNP general-purpose transistor Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

More information

2SD882. NPN medium power transistor. Features. Applications. Description. High current Low saturation voltage Complement to 2SB772

2SD882. NPN medium power transistor. Features. Applications. Description. High current Low saturation voltage Complement to 2SB772 NPN medium power transistor Features High current Low saturation Complement to 2SB772 Applications Voltage regulation Relay driver Generic switch Audio power amplifier DC-DC converter Description The device

More information

BD238. Low voltage PNP power transistor. Features. Applications. Description. Low saturation voltage PNP transistor

BD238. Low voltage PNP power transistor. Features. Applications. Description. Low saturation voltage PNP transistor Low voltage PNP power transistor Features Low saturation voltage PNP transistor Applications Audio, power linear and switching applications Description The device is manufactured in planar technology with

More information

BD135 - BD136 BD139 - BD140

BD135 - BD136 BD139 - BD140 BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are pre-selected in DC current gain Application General purpose Description These epitaxial planar transistors are mounted

More information

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN

More information

BD434/436/438. Symbol Parameter Value Units V CBO Collector-Base Voltage : BD434 : BD436 : BD438

BD434/436/438. Symbol Parameter Value Units V CBO Collector-Base Voltage : BD434 : BD436 : BD438 Medium Power Linear and Switching Applications Complement to BD433, BD435 and BD437 respectively 1 TO26 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25 C

More information

2PD601ARL; 2PD601ASL

2PD601ARL; 2PD601ASL Rev. 01 6 November 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1.

More information

DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 04. 2004 Feb 03.

DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 04. 2004 Feb 03. DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 Supersedes data of 2002 Oct 04 2004 Feb 03 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS

More information

EN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at www.hest ore.hu.

EN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at www.hest ore.hu. EN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at www.hest ore.hu. 2N3055, MJ2955 Complementary power transistors Features Datasheet - production

More information

BC807; BC807W; BC327

BC807; BC807W; BC327 Rev. 06 7 November 009 Product data sheet. Product profile. General description PNP general-purpose transistors. Table. Product overview Type number Package NPN complement NXP JEIT BC807 SOT - BC87 BC807W

More information

16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS

16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS Preferred Devices The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Total Harmonic

More information

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. http://onsemi.com MAXIMUM RATINGS

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. http://onsemi.com MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Package is Available* COLLECTOR 1 2 BASE MAXIMUM RATINGS Collector-Emitter oltage Collector-Base oltage Rating Symbol alue Unit CEO 65

More information

DATA SHEET. BC875; BC879 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.

DATA SHEET. BC875; BC879 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 May 28 2004 Nov 05 FEATURES High DC current gain (min. 1000) High current (max. 1 A) Low voltage (max. 80 V) Integrated

More information

BC327, BC327-16, BC327-25, BC327-40. Amplifier Transistors. PNP Silicon. These are Pb Free Devices* http://onsemi.com. Features MAXIMUM RATINGS

BC327, BC327-16, BC327-25, BC327-40. Amplifier Transistors. PNP Silicon. These are Pb Free Devices* http://onsemi.com. Features MAXIMUM RATINGS BC327, BC327-16, BC327-25, BC327-4 Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 45 Vdc CollectorEmitter Voltage

More information

2STBN15D100. Low voltage NPN power Darlington transistor. Features. Application. Description

2STBN15D100. Low voltage NPN power Darlington transistor. Features. Application. Description Low voltage NPN power Darlington transistor Features Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode TAB Application Linear

More information

SILICON TRANSISTOR 2SC3355

SILICON TRANSISTOR 2SC3355 DATA SHEET SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BFQ34 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DISCRETE SEMICONDUCTORS DATA SHEET. BFQ34 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14 DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC4 September 995 DESCRIPTION PINNING NPN transistor encapsulated in a 4 lead SOTA envelope with a ceramic cap. All leads are isolated

More information

MPS2907A Series. General Purpose Transistors. PNP Silicon. These are Pb Free Devices* Features MAXIMUM RATINGS

MPS2907A Series. General Purpose Transistors. PNP Silicon. These are Pb Free Devices*  Features MAXIMUM RATINGS General Purpose Transistors PNP Silicon Features These are PbFree Devices* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 6 Vdc CollectorBase Voltage V CBO 6 Vdc EmitterBase

More information

TIP31C. Power transistors. General features. Applications. Description. Internal schematic diagram. Order codes

TIP31C. Power transistors. General features. Applications. Description. Internal schematic diagram. Order codes Power transistors General features New enhanced series High switching speed h FE improved linearity h FE Grouping Applications Linear and switching industrial application TO-220 1 2 3 Description The TIP31C

More information

BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors

BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors BD241A BD241C NPN power transistors Features. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with

More information

DATA SHEET. BST50; BST51; BST52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Feb 20.

DATA SHEET. BST50; BST51; BST52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Feb 20. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 Supersedes data of 2001 Feb 20 2004 Dec 09 FEATURES High current (max. 0.5 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS

More information

(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6034. Plastic Darlington Complementary Silicon Power Transistors

(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6034. Plastic Darlington Complementary Silicon Power Transistors (PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors are designed for general purpose

More information

BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.

BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages. 65 V, 00 ma NPN general-purpose transistors Rev. 07 7 November 009 Product data sheet. Product profile. General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.

More information

MPSA92, MPSA93. High Voltage Transistors. PNP Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS MARKING DIAGRAM

MPSA92, MPSA93. High Voltage Transistors. PNP Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS MARKING DIAGRAM MPSA92, High Voltage Transistors PNP Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit MPSA92 MPSA92 V CEO V CBO 200

More information

2N2222A. Small Signal Switching Transistor. NPN Silicon. MIL PRF 19500/255 Qualified Available as JAN, JANTX, and JANTXV. http://onsemi.com.

2N2222A. Small Signal Switching Transistor. NPN Silicon. MIL PRF 19500/255 Qualified Available as JAN, JANTX, and JANTXV. http://onsemi.com. Small Signal Switching Transistor NPN Silicon Features MILPRF19/ Qualified Available as JAN, JANTX, and JANTXV COLLECTOR MAXIMUM RATINGS (T A = unless otherwise noted) Characteristic Symbol Value Unit

More information

PMD9002D. 1. Product profile. MOSFET driver. 1.1 General description. 1.2 Features. 1.3 Applications. Quick reference data

PMD9002D. 1. Product profile. MOSFET driver. 1.1 General description. 1.2 Features. 1.3 Applications. Quick reference data Rev. 0 20 November 2006 Product data sheet. Product profile. General description NPN Resistor-Equipped Transistor (RET), NPN general-purpose transistor and high-speed switching diode connected in totem

More information

2N6426, 2N6427. Darlington Transistors. NPN Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N6426, 2N6427. Darlington Transistors. NPN Silicon. These are Pb Free Devices* Features.  MAXIMUM RATINGS THERMAL CHARACTERISTICS 2N6426, 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 40 Vdc Collector Base

More information

PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAM

PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available*  Features MAXIMUM RATINGS MARKING DIAGRAM , General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Collector-Emitter Voltage Rating Symbol Value Unit V CEO 3 4 2 BASE 1 EMITTER Collector-Base

More information

TIP41C TIP42C. Complementary power transistors. Features. Applications. Description

TIP41C TIP42C. Complementary power transistors. Features. Applications. Description TIP41C TIP42C Complementary power transistors Features Complementary PNP-NPN devices New enhanced series High switching speed h FE grouping h FE improved linearity Applications General purpose circuits

More information

Quality assurance and reliability

Quality assurance and reliability ROHM product quality We put quality first Quality here refers to both the integrity of the products that we manufacture and price and timely delivery of those products to our customers. Although we put

More information

MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS

MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS , is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit

More information

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS THERMAL CHARACTERISTICS General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 6 Vdc Emitter

More information

BC847/BC547 series. 45 V, 100 ma NPN general-purpose transistors

BC847/BC547 series. 45 V, 100 ma NPN general-purpose transistors 45 V, ma NPN general-purpose transistors Rev. 6 9 May 5 Product data sheet. Product profile. General description NPN general-purpose transistors. Table : Product overview Type number [] Package PNP complement

More information

BCX BCX56... NPN Silicon AF Transistors. For AF driver and output stages High collector current Low collctor-emitter saturation voltage

BCX BCX56... NPN Silicon AF Transistors. For AF driver and output stages High collector current Low collctor-emitter saturation voltage BCX4... BCX6... NPN Silicon AF Transistors For AF driver and output stages High collector current Low collctoremitter saturation voltage Complementary types: BCX...BCX (PNP) Pbfree (RoHS compliant) package

More information

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish N393, N393 is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Package May be Available. The GSuffix Denotes a PbFree Lead Finish MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter

More information

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS 2N396 General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V

More information

BC337, BC337-25, BC337-40. Amplifier Transistors. NPN Silicon. These are Pb Free Devices. http://onsemi.com. Features MAXIMUM RATINGS

BC337, BC337-25, BC337-40. Amplifier Transistors. NPN Silicon. These are Pb Free Devices. http://onsemi.com. Features MAXIMUM RATINGS BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage

More information

STP03D kv NPN Darlington transistor. Features. Application. Description (2, TAB) B (1) E (3)

STP03D kv NPN Darlington transistor. Features. Application. Description (2, TAB) B (1) E (3) 2 kv NPN Darlington transistor Features Extra high voltage capability High gain characteristic TAB Application Active start-up network in 3 phase S.M.P.S. (see application note AN2454) Description The

More information

2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40 80 VOLTS, 30 WATTS

2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40 80 VOLTS, 30 WATTS ,, Medium-Power Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation Voltage Excellent

More information

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS N393, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 4 Vdc CollectorBase Voltage V CBO 6 Vdc EmitterBase

More information

BC846PN/UPN_BC847PN BC846PN BC846UPN BC847PN. Type Marking Pin Configuration Package BC846PN BC846UPN. 1Os 1Os BC847PN SOT363 SC74 SOT

BC846PN/UPN_BC847PN BC846PN BC846UPN BC847PN. Type Marking Pin Configuration Package BC846PN BC846UPN. 1Os 1Os BC847PN SOT363 SC74 SOT NPN/PNP Silicon AF Transistor Arrays For AF input stage and driver applications High current gain Low collectoremitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistor in one package

More information

BDX33/A/B/C. Symbol Parameter Value Units V CBO Collector-Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C

BDX33/A/B/C. Symbol Parameter Value Units V CBO Collector-Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C Power Linear and Switching Applications High Gain General Purpose Power Darlington TR Complement to BDX34/34A/34B/34C respectively 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor

More information

P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features. http://onsemi.com

P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features. http://onsemi.com Amplifier Transistors NPN Silicon Features These are PbFree Devices* MAXIMUM RATINGS (T A = 25 C unless otherwise noted) Characteristic Symbol Value Unit CollectorEmitter Voltage V CEO 4 CollectorBase

More information

45 V, 100 ma NPN general-purpose transistors

45 V, 100 ma NPN general-purpose transistors Rev. 9 2 September 214 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number

More information

Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C

Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C 2N6284 (NPN); 2N6286, Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general purpose amplifier and low frequency switching applications. Features High

More information

NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472

NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472 and Available on commercial versions NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472 DESCRIPTION Qualified Levels: JAN, JANTX, and JANTX This high speed NPN transistor is military

More information

IrDA Infrared Communication Module

IrDA Infrared Communication Module Photo ink Module Infrared Communication Module is an infrared communication module for er. 1.2 (ow Power). The infrared ED, PIN photo diode, SI are all integrated into a single package. This module is

More information

BC847/BC547 series. 45 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in small plastic packages.

BC847/BC547 series. 45 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in small plastic packages. Rev. 7 December 8 Product data sheet. Product profile. General description NPN general-purpose transistors in small plastic packages. Table. Product overview Type number [] Package PNP complement NXP JEITA

More information

PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291

PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 LEVELS 2N2906A 2N2907A JAN 2N2906AL 2N2907AL JANTX 2N2906AUA 2N2907AUA JANTXV 2N2906AUB 2N2907AUB JANS 2N2906AUBC * 2N2907AUBC

More information

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO 65 45

More information

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60-80 VOLTS

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60-80 VOLTS 2N6388 is a Preferred Device Plastic MediumPower Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500

More information

DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING

DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING DATA SHEET SILICON POWER TRANSISTOR 2SA1010 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SA1010 is a mold power transistor developed for highvoltage high-speed switching,

More information

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO SFH64 Optocoupler, Phototransistor Output, with Base Connection, 3 V BV CEO i1794-3 DESCRIPTION The SFH64 is an optocoupler with very high BV CER, a minimum of 3 V. It is intended for telecommunications

More information

Silicon NPN Phototransistor

Silicon NPN Phototransistor Silicon NPN Phototransistor DESCRIPTION 7 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth

More information

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection CNY7 Optocoupler, Phototransistor FEATURES Isolation test voltage 5 V RMS A 6 B Long term stability i79 C NC 5 C E Industry standard dual-in-line package Lead (Pb-free component Component in accordance

More information

SMD General Purpose Transistor (NPN) BC846/BC847/BC848. Features. Mechanical Data. Marking Information

SMD General Purpose Transistor (NPN) BC846/BC847/BC848. Features. Mechanical Data. Marking Information SMD General Purpose Transistor (NPN) SMD General Purpose Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: SOT-23, Plastic

More information

2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS

2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS NPN Darlington Silicon Power Transistor The NPN Darlington silicon power transistor is designed for general purpose amplifier and low frequency switching applications. High DC Current Gain h FE = 3000

More information

EXPERIMENT 9: BIPOLAR AND FIELD EFFECT TRANSISTOR CHARACTERISTICS

EXPERIMENT 9: BIPOLAR AND FIELD EFFECT TRANSISTOR CHARACTERISTICS EXPERIMENT 9: BIPOLAR AND FIELD EFFECT TRANSISTOR CHARACTERISTICS In this experiment we will study the characteristics of bipolar and junction field-effect (JFET) transistors, and will learn to use the

More information

Type Marking Pin Configuration Package BCX41 EKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO

Type Marking Pin Configuration Package BCX41 EKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO BX4 NPN Silicon AF and Switching Transistor For general AF applications High breakdown voltage Low collectoremitter saturation voltage omplementary type: BX4 (PNP) Pbfree (RoHS compliant) package Qualified

More information

TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors

TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features

More information

NPN wideband transistor in a SOT89 plastic package.

NPN wideband transistor in a SOT89 plastic package. SOT89 Rev. 05 21 March 2013 Product data sheet 1. Product profile 1.1 General description in a SOT89 plastic package. 1.2 Features and benefits High gain Gold metallization ensures excellent reliability

More information

BC107/ BC108/ BC109 Low Power Bipolar Transistors

BC107/ BC108/ BC109 Low Power Bipolar Transistors TO-18 Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low noise and good h FE linearity, eg. audio pre-amplifiers, and instrumentation. TO-18 Metal Can Package Dimension

More information

TIP31, TIP32 High Power Bipolar Transistor

TIP31, TIP32 High Power Bipolar Transistor Features: Collector-Emitter sustaining voltage - V CEO(sus) = 60V (Minimum) - TIP31A, TIP32A = 100V (Minimum) - TIP31C,. Collector-Emitter saturation voltage - V CE(sat) = 1.2V (Maximum) at I C = 3.0A.

More information

Note: The product(s) described herein should not be used for any other application.

Note: The product(s) described herein should not be used for any other application. Discrete IGBTs Silicon N-Channel IGBT GT50JR22 GT50JR22 1. Applications Dedicated to Current-Resonant Inverter Switching Applications The product(s) described herein should not be used for any other application.

More information

Optocoupler, Phototransistor Output, With Base Connection

Optocoupler, Phototransistor Output, With Base Connection IL/ IL2/ IL5 Optocoupler, Phototransistor Output, With Base Connection Features Current Transfer Ratio (see order information) Isolation Test Voltage 5300 V RMS Lead-free component Component in accordance

More information

BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS

BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK Designed for Complementary Use with the BD240 Series 30 W at 25 C Case Temperature TO-220 PACKAGE (TOP VIEW) 2 A Continuous Collector Current B 1 4 A Peak

More information

4N25 Phototransistor Optocoupler General Purpose Type

4N25 Phototransistor Optocoupler General Purpose Type 4N Phototransistor Optocoupler General Purpose Type Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxe denotes a lead-free product Description The 4N is an

More information

ST13005. High voltage fast-switching NPN power transistor. Features. Applications. Description

ST13005. High voltage fast-switching NPN power transistor. Features. Applications. Description High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications

More information

NPN wideband silicon germanium RF transistor

NPN wideband silicon germanium RF transistor Rev. 1 29 April 211 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F

More information

AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor

AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor AT- Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Description Avago s AT- is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT- is housed in

More information

Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package

Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package Optocoupler, Phototransistor Output, FEATURES High BV CEO, 70 V Vishay Semiconductors i79002 A K NC NC 2 3 4 8 7 6 5 NC B C E Isolation test voltage, 4000 V RMS Industry standard SOIC-8A surface mountable

More information

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors TIP140, TIP141, TIP142, (); TIP145, TIP146, TIP147, () Darlington Complementary Silicon Power Transistors Designed for generalpurpose amplifier and low frequency switching applications. Features High DC

More information

TLP521 1,TLP521 2,TLP521 4

TLP521 1,TLP521 2,TLP521 4 TLP2,TLP2 2,TLP2 4 TOSHIBA Photocoupler GaAs Ired & Photo Transistor TLP2,TLP2 2,TLP2 4 Programmable Controllers AC/DC Input Module Solid State Relay Unit in mm The TOSHIBA TLP2, 2 and 4 consist of a photo

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) BUL312FP HIGH OLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH OLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ERY HIGH SWITCHING SPEED FULLY CHARACTERIZED

More information

Features: Characteristic Symbol Rating Unit. Collector-Emitter Voltage V CEO 100 Collector-Base Voltage I C

Features: Characteristic Symbol Rating Unit. Collector-Emitter Voltage V CEO 100 Collector-Base Voltage I C Designed for use in general purpose power amplifier and switching applications. Features: Collector-Emitter Sustaining Voltage V CEO(sus) = 100V (Minimum) - TIP35C, TIP36C DC Current Gain h FE = 25 (Minimum)

More information

NPN Darlington Power Silicon Transistor

NPN Darlington Power Silicon Transistor Available NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/539 DESCRIPTION This high speed NPN transistor is rated at 8 amps and is military qualified up to a JANTX level. This TO-213AA

More information

BSP52T1 MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR

BSP52T1 MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package,

More information

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 GT6J2 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT6J2 Current Resonance Inverter Switching Application Unit: mm Enhancement mode type High speed : t f =.6 μs (typ.) (I C = 6A) Low

More information

Y.LIN ELECTRONICS CO.,LTD.

Y.LIN ELECTRONICS CO.,LTD. Features Current transfer ratio (CTR 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up to +110 C Compact

More information

TIP140 to TIP142 & TIP145 to TIP147 Darlington Transistors

TIP140 to TIP142 & TIP145 to TIP147 Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications. Collector-Emitter sustaining voltage V CEO (sus) = 60V (Minimum) - TIP140, TIP145 = 80V (Minimum) - TIP141, TIP146

More information

2MBI600VX-120-50. Power Module (V series) 1200V / 600A / 2-in-1 package. IGBT Modules

2MBI600VX-120-50. Power Module (V series) 1200V / 600A / 2-in-1 package. IGBT Modules 2MBI6VX125 Power Module (V series) 12V / 6A / 2in1 package Features Low V CE(sat) Low Inductance Module structure Solderless pressfit terminals Applications Inverter for Motor Drives, AC and DC Servo Drives

More information

BU323Z. NPN Silicon Power Darlington. High Voltage Autoprotected 10 AMPERE DARLINGTON AUTOPROTECTED VOLTS CLAMP, 150 WATTS

BU323Z. NPN Silicon Power Darlington. High Voltage Autoprotected 10 AMPERE DARLINGTON AUTOPROTECTED VOLTS CLAMP, 150 WATTS NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, highvoltage power Darlington with a builtin active zener clamping circuit. This device is specifically designed

More information

High performance video signal switcher Five inputs Dual Circuits Video Signal Switchers BA7626F,BA7626FS. 2011.03 - Rev.A 1/6

High performance video signal switcher Five inputs Dual Circuits Video Signal Switchers BA7626F,BA7626FS. 2011.03 - Rev.A 1/6 High performance video signal switcher Five inputs Dual Circuits Video Signal Switchers BA2F,BA2FS No.110EAT01 Description The BA2F/FS is a 5-input video signal switching circuit with a broadband db amplifier

More information

MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications

MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications MJD (NPN), MJD7 (PNP) Complementary Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as

More information

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection HA/HA2/HA3/HA4/HA5 FEATURES Interfaces with common logic families Input-output coupling capacitance < pf Industry standard dual-in line 6-pin package A C NC 2 3 6 5 4 B C E Isolation test voltage: 5300

More information

Ambient Light Sensor

Ambient Light Sensor TEPT56 Ambient Light Sensor DESCRIPTION 94 839 TEPT56 ambient light sensor is a silicon NPN epitaxial planar phototransistor in a T-1¾ package. It is sensitive to visible light much like the human eye

More information