FCX V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY SOT 89. V CEO=120V; V CE(sat)= 1V; I C= 1A

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1 120V NPN SILION HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY V EO=120V; V E(sat)= 1V; I = 1A DESRIPTION This new NPN Darlington transistor provides users with very efficeint performance combining low V E (sat) and very high Hfe to give extremely low on state losses at 120V operation. This makes it deal for use in a variety of efficient driving functions including motors, lamps relays and solenoids and will also benefit circuits requiring high output current switching. FEATURES Low Saturation SOT 89 Hfe min 1A I = 1A ontinuous SOT89 package with Plot 1W Specification is also available in Eline and SOT223 package outlines B APPLIATIONS Various driving functions - Lamps - Motors - Relays and solenoids E High output current switches E ORDERING INFORMATION DEVIE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL B FX605TA 7 12mm embossed 00 units Top View DEVIE MARKING 605 1

2 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT NPN UNIT ollector-base V BO 140 V ollector-emitter V EO 120 V Emitter-Base V EBO V Peak Pulse urrent I M 4 A ontinuous ollector urrent I 1 A Power Dissipation at TA=25 (a) Linear Derating Factor Power Dissipation at TA=25 (b) Linear Derating Factor P D 1 8 P D W mw/ W mw/ Operating and Storage Temperature Range T j :T stg -55 to +150 THERMAL RESISTANE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θja 125 /W Junction to Ambient (b) R θja 45 /W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PB measured at t 5 secs. 2

3 ELETRIAL HARATERISTIS (at T amb = 25 unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT ONDITIONS. ollector-base Breakdown ollector-emitter Breakdown V (BR)BO 140 V I =0 A V (BR)EO 120 V I =ma* Emitter-Base Breakdown V (BR)EBO V I E =0 A ollector ut-off urrent I BO 0 na µa V B =V V B = 120V Tamb = 0 Emitter ut-off urrent I EBO 0.1 µa V EB =8V ollector Emitter ut-off urrent I ES µa V ES =120V ollector-emitter Saturation V E(sat) 1 V V I =250mA, I B =0.25mA* I =1A, I B =1mA* Base-Emitter Saturation V BE(sat) V I =1A, I B =1mA* Base-Emitter Turn-On V BE(on) 1.7 V I =1A,V E =5V* Static Forward urrent Transfer Ratio h FE 2K 5K 2K 0.5 0K I =50mA,V E =5V* I =500mA, V E =5V* I =1A, V E =5V* I =2A, V E =5V* Transition Frequency f T 150 MHz I =0mA, V E =V f=20mhz Input apacitance ibo 90 pf V B =500mV, f=1mhz Output apacitance obo 15 pf V B =V, f=1mhz Turn-On Time t (on) 0.5 µs I =500mA, V E =V I B1 =I B2 =0.5mA Turn-Off Time t (off) µs I =500mA, V E =V I B1 =I B2 =0.5mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2% Nb. Spice parameter data is available upon request for this device. 3

4 VBE - (Volts) FX605 NPN TYPIAL HARATERISTIS I/IB= VE=5V hfe - Gain normalised to 1 Amp VE(sat) - (Volts) VE(sat) v I hfe v I VBE(sat) - (Volts) I/IB=0 VE=5V VBE(sat) v I VBE(on) v I Single Pulse Test at Tamb= D.. 1s 0ms ms ms 0µs ZTX VE - ollector (Volts) Safe Operating Area ZTX605 4

5 PAKAGE DIMENSIONS PAD LAYOUT DETAILS SOT89 pattern. PAKAGE DIMENSIONS DIM Millimeters Inches Millimeters Inches DIM Min Max Min Max Min Max Min Max A e b E b E b G c H Zetex Semiconductors plc 2005 Europe Americas Asia Pacific orporate Headquarters Zetex GmbH Streitfeldstraße 19 D München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY USA Zetex (Asia) Ltd Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park hadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) Fax: (49) europe.sales@zetex.com Telephone: (1) Fax: (1) usa.sales@zetex.com Telephone: (852) Fax: (852) asia.sales@zetex.com Telephone (44) Fax: (44) hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the ompany in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The ompany reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to 5