MT..KB SERIES 55 A 90 A 110 A THREE PHASE CONTROLLED BRIDGE. Power Modules. Features. Description. Major Ratings and Characteristics
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1 MT..KB SERIES THREE PHASE CONTROLLED BRIDGE Power Modules Features Package fully compatible with the industry standard INT-A-pak power modules series High thermal conductivity package, electrically insulated case 55 A 90 A 0 A Outstanding number of power encapsulated components Excellent power volume ratio 4000 V RMS isolating voltage UL E78996 approved Description A range of extremely compact, encapsulated three phase controlled bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications. Major Ratings and Characteristics Parameters 53MT.KB 93MT.KB 3MT.KB 52MT.KB 92MT.KB 2MT.KB Units 5MT.KB 9MT.KB MT.KB I O T C C I 50Hz Hz A I 2 50Hz A 2 60Hz A 2 s I 2 t A 2 s V RRM range 800 to 600 V T STG range - 40 to 25 C T J range - 40 to 25 C
2 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V RRM, maximum V RSM, maximum V DRM, max. repetitive I RRM /I DRM max. Type number Code repetitive peak non-repetitive peak peak off-state T J = 25 C reverse voltage reverse voltage gate open circuit V V V ma /52/5MT..KB /92/9MT..KB 0 0 3/2/MT..KB Forward Conduction 53MT.KB 93MT.KB 3MT.KB Parameter 52MT.KB 92MT.KB 2MT.KB Units Conditions 5MT.KB 9MT.KB MT.KB I O Maximum DC output current A Rect conduction Case temperature C I TSM Maximum peak, one-cycle A t = 0ms No voltage forward, non-repetitive t = 8.3ms reapplied on state surge current t = 0ms % V RRM t = 8.3ms reapplied Initial I 2 t Maximum I 2 t for fusing A 2 s t = 0ms No voltage T J = T J max t = 8.3ms reapplied t = 0ms % V RRM t = 8.3ms reapplied I 2 t Maximum I 2 t for fusing A 2 s t = 0. to 0ms, no voltage reapplied V T(TO) Low level value of threshold V (6.7% x π x I T(AV) < I < π x I T(AV) T J max. voltage V T(TO)2 High level value of threshold (I > π x I T(AV) T J max. voltage r t Low level value on-state mω (6.7% x π x I T(AV) < I < π x I T(AV) T J max. slope resistance r t2 High level value on-state (I > π x I T(AV) T J max. slope resistance V TM Maximum on-state voltage drop V I pk = 50A, T J = 25 C t p = 400µs single junction di/dt Max. non-repetitive rate 50 A/µs T J = 25 o C, from 0.67 V DRM, I TM = π x I T(AV), of rise of turned on current I g = 500mA, t r < 0.5 µs, t p > 6 µs I H Max. holding current T J = 25 o C, anode supply = 6V, ma resistive load, gate open circuit I L Max. latching current 400 T J = 25 o C, anode supply = 6V, resistive load 2
3 Blocking MT..KB Series 53MT.KB 93MT.KB 3MT.KB Parameter 52MT.KB 92MT.KB 2MT.KB Units Conditions 5MT.KB 9MT.KB MT.KB V INS RMS isolation voltage 4000 V T J = 25 o C all terminal shorted f = 50Hz, t = s dv/dt Max. critical rate of rise 500 V/µs T J = T J max., linear to 0.67 V DRM, of off-state voltage (*) gate open circuit (*) Available with dv/dt = 0V/ms, to complete code add S90 i.e. 3MT60KBS90. Triggering 53MT.KB 93MT.KB 3MT.KB Parameter 52MT.KB 92MT.KB 2MT.KB Units Conditions 5MT.KB 9MT.KB MT.KB P GM Max. peak gate power 0 W T J = T J max. P G(AV) Max. average gate power 2.5 I GM Max. peak gate current 2.5 A -V GT Max. peak negative 0 V gate voltage V GT Max. required DC gate 4.0 V T J = - 40 C voltage to trigger 2.5 T J = 25 C Anode supply = 6V, resistive load.7 T J = 25 C I GT Max. required DC gate 270 T J = - 40 C current to trigger 50 ma T J = 25 C Anode supply = 6V, resistive load 80 T J = 25 C V GD Max. gate voltage 0.25 T J = T J max., rated V DRM applied that will not trigger I GD Max. gate current 6 ma that will not trigger Thermal and Mechanical Specifications 53MT.KB 93MT.KB 3MT.KB Parameter 52MT.KB 92MT.KB 2MT.KB Units Conditions 5MT.KB 9MT.KB MT.KB T J Max. junction operating -40 to 25 C temperature range T stg Max. storage temperature -40 to 25 C range R thjc Max. thermal resistance, K/W DC operation per module junction to case DC operation per junction Rect condunction angle per module Rect condunction angle per junction R thcs Max. thermal resistance, 0.03 K/W Per module case to heatsink Mounting surface smooth, flat an greased T Mounting to heatsink 4 to 6 Nm A mounting compound is recommended and the torque ± 0% to terminal 3 to 4 torque should be rechecked after a period of 3 hours to allow for the spread of the compound. wt Approximate weight 225 g Lubricated threads. 3
4 R Conduction (per Junction) (The following table shows the increment of thermal resistance R thjc when devices operate at different conduction angles than DC) Devices Sinusoidal T J max. Rectangular T J max. 80 o 20 o 90 o 60 o 30 o 80 o 20 o 90 o 60 o 30 o 53/52/5MT.KB K/W 93/92/9MT.KB /2/MT.KB Units Ordering Information Table Device Code 3 MT 60 K B S Current rating code: 5 = 55 A (Avg) 9 = 90 A (Avg) = 0 A (Avg) 2 - Circuit configuration code: 3 = Full-controlled bridge 2 = Positive half-controlled bridge = Negative half-controlled bridge 3 - Essential part number 4 - Voltage code: Code x 0 = V RRM (See Voltage Ratings Table) 5 - Generation 6 - Critical dv/dt: None = 500V/µs (Standard value) S90 = 0V/µs (Special selection) full-controlled bridge (53, 93, 3MT..KB) positive half-controlled bridge (52, 92, 2MT..KB) negative half-controlled bridge (5, 9, MT..KB) NOTE: To order the Optional Hardware see Bulletin I
5 Outline Table (with optional barriers) All dimensions in millimeters (inches) Outline Table (without optional barriers) All dimensions in millimeters (inches) 5
6 Maximum Allowable Case Temperature ( C) Instantaneous On-state Current (A) 0 0 T = 25 C J T = 25 C J Instantaneous On-state Voltage (V) Fig. - Current Ratings Characteristic Fig. 2 - Forward Voltage Drop Characteristics Maximum Total Power Loss (W) T = 25 C J 0.5 K/W 0.7 K/W K/W.5 K/W 0.4 K/W Maximum Allowable Ambient Temperature ( C) 0.3 K/W 0.2 K/W Fig. 3 - Total Power Loss Characteristics 0.2 K/W R = 0.05 K/W - Delta R thsa At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = Hz Hz 0.0 s Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 25 C No Voltage Reapplied Rated V RRMReapplied Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current 6
7 Maximum Allowable Case Temperature ( C) MT..KB Series Instantaneous On-state Current (A) 0 0 T J = 25 C T J = 25 C 93MT..KB Series Instantaneous On-state Voltage (V) Fig. 6 - Current Ratings Characteristic Fig. 7 - Forward Voltage Drop Characteristics Maximum Total Power Loss (W) MT..KB Series T = 25 C J 0.5 K/W 0.3 K/W 0.4 K/W 0.7 K/W K/W.5 K/W 0.2 K/W 0.2 K/W R = 0.05 K/W - Delta R thsa Maximum Allowable Ambient Temperature ( C) Fig. 8 - Total Power Loss Characteristics At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= Hz Hz 0.0 s MT..KB Series Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 25 C No Voltage Reapplied Rated V RRM Reapplied MT..KB Series Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 0 - Maximum Non-Repetitive Surge Current 7
8 Maximum Allowable Case Temperature ( C) MT..KB Series Instantaneous On-state Current (A) 0 0 T J = 25 C T J = 25 C 3MT..KB Series Instantaneous On-state Voltage (V) Fig. - Current Ratings Characteristic Fig. 2 - Forward Voltage Drop Characteristics Maximum Total Power Loss (W) MT..KB Series T = 25 C J 0.5 K/W 0.3 K/W 0.4 K/W 0.7 K/W K/W.5 K/W 0.2 K/W 0.2 K/W R = 0.05 K/W - Delta R thsa Maximum Allowable Ambient Temperature ( C) Fig. 3 - Total Power Loss Characteristics At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = Hz Hz 0.0 s 500 3MT..KB Series Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 25 C No Voltage Reapplied Rated V RRM Reapplied 500 3MT..KB Series Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current 8
9 Transient Thermal Impedance Z (K/W) thjc Steady State Value R thjc =.07 K/W R thjc = 0.86 K/W R thjc = 0.70 K/W (DC Operation) 93MT..KB Series Square Wave Pulse Duration (s) Fig. 6 - Thermal Impedance Z thjc Characteristics 3MT..KB Series Instantaneous Gate Voltage (V) 0 Rectangular gate pulse a) Recommended load line for rated di/dt: 20 V, 30 ohms tr = 0.5 µs, tp >= 6 µs b) Recommended load line for <= 30% rated di/dt: 20 V, 65 ohms tr = µs, tp >= 6 µs (a) (b) TJ = 25 C TJ = 25 C TJ = -40 C VGD IGD 53/ 93/ 3MT..KB Series Frequency Limited by PG(AV) Instantaneous Gate Current (A) Fig. 7 - Gate Characteristics () PGM = W, tp = 500 µs (2) PGM = 50 W, tp = ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 0 W, tp = 5 ms (4) (3) (2) () 9
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PD - 96232 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
MCR100 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 A RMS 100 thru 600 V
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls,
Final data. Maximum Ratings Parameter Symbol Value Unit
SPPN8C3 SPN8C3 Cool MOS Power Transistor V DS 8 V Feature R DS(on).45 Ω New revolutionary high voltage technology Ultra low gate charge I D Periodic avalanche rated Extreme dv/dt rated Ultra low effective
IRGP4068DPbF IRGP4068D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low V CE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature
Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
SK54B SCHOTTKY RECTIFIER
Applications: SCHOTTKY RECTIFIER Features: Switching power supply Converters Free-Wheeling diodes Reverse battery protection Disk drives Battery charging Small foot print, surface mountable Very low forward
TISP4500H3BJ Overvoltage Protector
*RoHS COMPLINT TISP4500H3BJ BIDIRECTIONL THYRISTOR OVERVOLTGE PROTECTORS TISP4500H3BJ Overvoltage Protector Non-Conductive During K.20/21/45 Power Contact Test - Off-State Voltage... >245 V rms - For Controlled
RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000
PD 97437A IRF93PbF HEXFET Power MOSFET V DS 30 V R DS(on) max (@V GS = V) I D (@T A = 25 C) 4. mω 20 A * SO8 Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits
Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 5.0 V 0.077 Q g (Max.) (nc) 64 Q gs (nc) 9.4 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel
CoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rated Product
TISP4600F3, TISP4700F3 OBSOLETE
*RoHS COMPLIANT TISP4600F3, TISP4700F3 HIGH OLTAGE BIDIRECTIONAL THYRISTOR OEROLTAGE PROTECTORS TISP4600F3, TISP4700F3 Ion-Implanted Breakdown Region Precise and Stable oltage Low oltage Overshoot under
Features. Case: TO-220-3 (2), TO-220F-3 (Option 1), TO-252-2 (1) and TO- 263-2 Power Management Instrumentation
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V F (MAX) (V) I R (MAX) (ma) V RRM (V) I O (A) @ +25 C @ +25 C 100 2x10 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch
STTH1R04-Y. Automotive ultrafast recovery diode. Features. Description
Automotive ultrafast recovery diode Features Datasheet - production data K SMA STTH1R4AY Table 1. Device summary Symbol Value I F(AV) 1 A V RRM 4 V T j (max) 175 C V F (typ) t rr (typ) A K.9 V 14 ns A
Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.077 Q g (Max.) (nc) 72 Q gs (nc) 11 Q gd (nc) 32 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 38. V/ns T J. mj I AR
PD 967 IRFB465PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S V DSS HEXFET
W/ C V GS Gate-to-Source Voltage ± 16 dv/dt Peak Diode Recovery e 21
PD 97369 IRLB43PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
IRF6201PbF. HEXFET Power MOSFET V DS 20 V. R DS(on) max. 2.75 mω. Q g (typical) 130 nc 27 A. Absolute Maximum Ratings
PD - 97500A IRF620PbF V DS 20 V HEXFET Power MOSFET R DS(on) max (@ = 4.5V) 2.45 mω 6 R DS(on) max (@ = 2.5V) 2.75 mω 6 6 Q g (typical) 30 nc * SO-8 I D (@T A = 25 C) 27 A Applications OR-ing or hot-swap
P6KE6.8A thru P6KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. www.vishay.com FEATURES PRIMARY CHARACTERISTICS
TRANSZORB Transient Voltage Suppressors DO-204AC (DO-15) PRIMARY CHARACTERISTICS V WM 5.8 V to 459 V V BR uni-directional 6.8 V to 540 V V BR bi-directional 6.8 V to 440 V P PPM 600 W P D 5.0 W I FSM (uni-directional
N-channel enhancement mode TrenchMOS transistor
FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = V Low on-state resistance Fast switching I D = A High thermal cycling performance Low thermal resistance R DS(ON) mω (V GS = V) g s R DS(ON)
SMD version of BUK118-50DL
DESCRIPTION QUICK REFERENCE DT Monolithic temperature and SYMBOL PRMETER MX. UNIT overload protected logic level power MOSFET in TOPFET2 technology V DS Continuous drain source voltage 50 V assembled in
A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units
V DS 2 V V GS Max ± 2 V R DSon) max @V GS = V) 24 m * PD - 9787A HEXFET Power MOSFET R DSon) max @V GS = 4.V) 4 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits
IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
A I DM. W/ C V GS Gate-to-Source Voltage ± 12. Thermal Resistance Symbol Parameter Typ. Max. Units
V DS 2 V V GS Max ±2 V * PD - 973A HEXFET Power MOSFET R DSon) max @V GS = 4.V) 2. m R DSon) max @V GS = 2.V) 27. m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits
Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
BYT60P-1000 BYT261PIV-1000
BY6P-1 BY261PIV-1 FAS RECOVERY RECIFIER DIODES MAJOR PRODUC CHARACERISICS K2 A2 I F(AV) V RRM VF (max) trr (max) FEAURES AND BENEFIS 2 x 6 A 1 V 1.8 V 7 ns K1 A1 BY261PIV-1 VERY LOW REVERSE RECOVERY IME
IRLR8729PbF IRLU8729PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.0. V/ns T J. mj I AR. Thermal Resistance Symbol Parameter Typ. Max.
PD 9727 IRFP326PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
= 600 V = 56 A = 2.7 V. C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 32 ns V CE(SAT) t fi(typ. Preliminary Data Sheet
HiPerFAST TM IGBT IXGR 4N6C2 ISOPLUS247 TM IXGR 4N6C2D C2-Class High Speed IGBTs (Electrically Isolated Back Surface) S = 6 V 25 = 56 A (SAT) = 2.7 V t fi(typ = 32 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D
Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640
Power MOSFET PRODUCT SUMMARY V DS (V) 200 R DS(on) (Ω) = 10 V 0.50 Q g (Max.) (nc) 44 Q gs (nc) 7.1 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D
PDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information
Green 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI 5 Product Summary I F V R V F MAX (V) I R MAX (ma) (V) (A) @ +25 C @ +25 C 1 5..71.35 Description and Applications This Schottky Barrier Rectifier
AN2012-01. Technical Information Bipolar Semiconductors. www.ifbip.com www.ifbip-shop.com
AN2012-01 Technical Information Bipolar Semiconductors www.ifbip.com www.ifbip-shop.com Products and Innovations The goal of highest reliability and efficiency in a core technology is always a moving target;
Features. Symbol JEDEC TO-220AB
Data Sheet June 1999 File Number 2253.2 3A, 5V,.4 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching
IRF5305PbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.06Ω I D = -31A
dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize
V DSS I D. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 973B IRFB432PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low
1N5820, 1N5821, 1N5822. Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
1N58, 1N5821, 1N5822 1N58 and 1N5822 are Preferred Devices Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features
SPW32N50C3. Cool MOS Power Transistor V DS @ T jmax 560 V
SPW3N5C3 Cool MOS Power Transistor V DS @ T jmax 56 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances
Schematic Mechanical Drawing Derating Curve. Input. Output. Product Catalogue
Input 1 Product Catalogue Single Phase SSR (24VAC) 1 ~ 4 Amps : DC Control, : Triac output 42.5 Series : 1 J/K 3 Input (+) & 4 Input (-) 1 & 2 35.6 25.5 57.75 28. 45. A = 3.2 C/W B = 1. C/W C & D =.5 C/W