Ultrafast Soft Recovery Diode, 60 A FRED Pt

Transcription

1 VS-60EPU06PbF, VS-60EPU06-N3, VS-60PU06PbF, VS-60PU06-N3 Ultrafast Soft Recovery iode, 60 FRE Pt TO-247 modified athode to base athode node VS-60EPU06PbF VS-60EPU06-N3 PROUT SUMMRY TO-247 athode to base node node VS-60PU06PbF VS-60PU06-N3 Package TO-247 modified (2 pins), TO-247 I F(V) 60 V R 600 V V F at I F 1.11 V t rr typ. See Recovery table T J max. 175 iode variation Single die FETURES Ultrafast recovery time Low forward voltage drop 175 operating junction temperature esigned and qualified according to JEE -JES47 Material categorization: for definitions of compliance please see /doc?99912 BENEFITS Reduced RFI and EMI Higher frequency operation Reduced snubbing Reduced parts count vailable ESRIPTION / PPLITIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST ONITIONS MX. UNITS athode to anode voltage V R 600 V ontinuous forward current I F(V) T = Single pulse forward current I FSM T = Maximum repetitive forward current I FRM Square wave, 20 khz 120 Operating junction and storage temperatures T J, T Stg -55 to +175 ELETRIL SPEIFITIONS (T J = 25 unless otherwise specified) PRMETER SYMBOL TEST ONITIONS MIN. TYP. MX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = μ Forward voltage V F I F = 60, T J = I F = V I F = 60, T J = V R = V R rated Reverse leakage current I R T J = 150, V R = V R rated μ Junction capacitance T V R = 600 V pf Revision: 09-Jul-15 1 ocument Number: For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T /doc?90

2 VS-60EPU06PbF, VS-60EPU06-N3, VS-60PU06PbF, VS-60PU06-N3 YNMI REOVERY HRTERISTIS (T J = 25 unless otherwise specified) PRMETER SYMBOL TEST ONITIONS MIN. TYP. MX. UNITS Reverse recovery time t rr T J = ns I F = 1, di F /dt = 200 /μs, V R = 30 V T J = Peak recovery current I RRM T I F = 60 J = di F /dt = 200 /μs T J = 125 V R = 200 V T J = Reverse recovery charge Q rr T J = n THERML - MEHNIL SPEIFITIONS PRMETER SYMBOL TEST ONITIONS MIN. TYP. MX. UNITS Thermal resistance, R thj junction to case K/W Thermal resistance, Mounting surface, flat, smooth R ths case to heatsink and greased Weight Mounting torque Marking device ase style TO-247 modified ase style TO g oz. 1.2 (10) - 60EPU06 60PU (20) N m (lbf in) 0 0 I F - Instantaneous Forward urrent () 10 T J = 175 T J = 125 T J = 25 I R - Reverse urrent (µ) T J = 175 T J = 125 T J = V F - Forward Voltage rop (V) V R - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage rop haracteristics Fig. 2 - Typical Values of Reverse urrent vs. Reverse Voltage Revision: 09-Jul-15 2 ocument Number: For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T /doc?90

3 VS-60EPU06PbF, VS-60EPU06-N3, VS-60PU06PbF, VS-60PU06-N3 0 T - Junction apacitance (pf) T J = V R - Reverse Voltage (V) Fig. 3 - Typical Junction apacitance vs. Reverse Voltage Z thj - Thermal Impedance ( /W) T J τ 1 i = τi/ri R 1 R 2 R 3 τ 2 τ 3 t on - Rectangular Pulse uration (s) T Ri ( /W) τi (s) Notes: 1. uty factor = t on /period 2. Peak T J = P M x Z thj + T 10 Fig. 4 - Maximum Thermal Impedance Z thj haracteristics llowable ase Temperature ( ) Square wave ( = 0.50) 80 % rated V R applied See note (1) verage Power Loss (W) RMS limit = 0.01 = 0.02 = 0.05 = 0.10 = 0.20 = I F(V) - verage Forward urrent () I F(V) - verage Forward urrent () Fig. 5 - Maximum llowable ase Temperature vs. verage Forward urrent Fig. 6 - Forward Power Loss haracteristics Revision: 09-Jul-15 3 ocument Number: For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T /doc?90

4 VS-60EPU06PbF, VS-60EPU06-N3, VS-60PU06PbF, VS-60PU06-N3 t rr (ns) T J = 125 T J = 25 I F = 30 I F = 60 Q rr (n) T J = 125 T J = 25 I F = 30 I F = di F /dt (/µs) Fig. 7 - Typical Reverse Recovery Time vs. di F /dt Note (1) Formula used: T = T J - (Pd + Pd REV ) x R thj ; Pd = Forward power loss = I F(V) x V FM at (I F(V) /) (see fig. 6); Pd REV = Inverse power loss = V R1 x I R (1 - ); I R at V R1 = 80 % rated V R di F /dt (/µs) Fig. 8 - Typical Stored harge vs. di F /dt V R = 200 V L = 70 μh 0.01 Ω.U.T. di F /dt adjust G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test ircuit (3) t rr 0 I F t a tb (2) I RRM Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM (1) di F /dt (1) di F /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig Reverse Recovery Waveform and efinitions Revision: 09-Jul-15 4 ocument Number: For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T /doc?90

5 VS-60EPU06PbF, VS-60EPU06-N3, VS-60PU06PbF, VS-60PU06-N3 ORERING INFORMTION TBLE evice code VS- 60 E P U 06 PbF product 2 - urrent rating (60 = 60 ) 3 - ircuit configuration: E = single diode = single diode, 3 pins 4 - Package: P = TO-247 (modified) 5 - Type of silicon: U = ultrafast recovery 6 - Voltage rating (06 = 600 V) 7 - Environmental digit: PbF = lead (Pb)-free and RoHS-compliant -N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free ORERING INFORMTION (Example) PREFERRE P/N QUNTITY PER T/R MINIMUM ORER QUNTITY PKGING ESRIPTION VS-60EPU06PbF ntistatic plastic tube VS-60EPU06-N ntistatic plastic tube VS-60PU06PbF ntistatic plastic tube VS-60PU06-N ntistatic plastic tube LINKS TO RELTE OUMENTS imensions Part marking information TO-247 modified TO-247 TO-247 modified PbF TO-247 modified -N3 TO-247PbF TO-247-N3 /doc?95541 /doc?95542 /doc?95255 /doc?95442 /doc?95226 /doc?95007 Revision: 09-Jul-15 5 ocument Number: For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T /doc?90

6 IMENSIONS in millimeters and inches TO mils L/F modified Outline imensions B (2) R/2 Q (3) E N S 2 (6) Ø P (atum B) Ø K M B M Ø P1 2 2 x R (2) Thermal pad 4 (5) L1 L See view B E1 2 x b2 3 x b 0.10 M M b4 2 x e 1 View - Plating (b1, b3, b5) Base metal E E (c) c1 (b, b2, b4) Section -, -, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES E E b e 5.46 BS BS b Ø K b L b L b N 7.62 BS 0.3 b Ø P c Ø P c Q R S 5.51 BS BS Notes (1) imensioning and tolerance per SME Y14.5M-1994 (2) ontour of slot optional (3) imension and E do not include mold flash. Mold flash shall not exceed mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body Thermal pad contour optional with dimensions 1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEE outline TO-247 with exception of dimension c and Q Revision: 21-pr-15 1 ocument Number: For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T /doc?90

7 TO mils L/F Outline imensions IMENSIONS in millimeters and inches B (2) R/2 Q (3) E N S 2 Ø K M B M (6) Φ P (atum B) 2 Φ P1 2 x R (2) Thermal pad 4 (5) L1 L See view B E M B M 2 x b2 3 x b 0.10 M M b4 2 x e 1 View - Plating (b1, b3, b5) Base metal E E (c) c1 (b, b2, b4) Section -, -, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES E E b e 5.46 BS BS b Ø K b L b L b N 7.62 BS 0.3 b Ø P c Ø P c Q R S 5.51 BS BS Notes (1) imensioning and tolerancing per SME Y14.5M-1994 (2) ontour of slot optional (3) imension and E do not include mold flash. Mold flash shall not exceed mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body Thermal pad contour optional with dimensions 1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEE outline TO-247 with exception of dimension c and Q Revision: 21-pr-15 1 ocument Number: For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T /doc?90

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