STTA506D/F/B TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) V RRM 600V. t rr (typ) 20ns. VF (max) 1.

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1 STT506D/F/B TURBOSWITCH ULTR-FST HIGH OLTGE DIODE MIN PRODUCTS CHRCTERISTICS IF() RRM K t rr (typ) 20ns F (max) 1.5 K K FETURES ND BENEFITS SPECIFICTO FREEWHEELMODE OPERTIONS: FREEWHEEL OR BOOSTER DIODE ULTR-FST ND SOFT RECOERY ERY LOW OERLL POWER LOSSES IN BOTH THE DIODE ND THE COMPNION TRNSISTOR HIGH FREQUENCY OPERTIONS INSULTED PCKGE: Electrical insulation : 2000DC Capacitance < 12 pf TO-220C STT506D K NC STT506F DPK STT506B DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600 to TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all freewheel mode operations and is particularly suitable and efficient in motor control freewheelapplicationsand in booster diode applications in power factor control circuitries. Packaged either in TO-220C, or in DPK, these 600 devices are particularly intended for use on 240 domestic mains. BSOLUTE RTINGS (limiting values) Symbol Parameter alue Unit RRM Repetitive peak reverse voltage 600 RSM Non repetitive peak reverse voltage 600 IF(RMS) RMS forward current TO-220C 20 DPK 10 IFRM Repetitive peak forward current tp=5µs F=5kHz square 65 IFSM Surge non repetitive forward current tp=10 ms sinusoidal 55 Tj Maximum operating junction temperature 150 C Tstg Storage temperature range -65 to 150 C TM : TURBOSWITCH is a trademark of STMicroelectronics November Ed : 3D 1/10

2 THERML ND POWER DT Symbol Parameter Test conditions alue Unit R th(j-c) Junction to case TO-220C/ DPK P1 Pmax Conduction power dissipation I F() =5 δ=0.5 Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) STTIC ELECTRICL CHRCTERISTICS Symbol Parameter Test conditions Min Typ Max Unit F * Forward voltage drop I F =5 Tj = 25 C Tj = 125 C 1.25 IR ** Reverse leakage current R =0.8 x RRM Tj=25 C Tj = 125 C 0.75 to Threshold voltage Ip < 3.I Tj = 125 C 1.15 rd Dynamic resistance 70 mω Test pulse : * tp = 380 µs, δ <2% ** tp = 5 ms, δ <2% TO-220C/ DPK TO-220C/ DPK To evaluate the maximum conduction losses use the following equation : P=to xif() +rdxif 2 (RMS) Tc= 118 C Tc= 96 C Tc= 115 C Tc= 90 C C/W 9 W 10 W µ m DYNMIC ELECTRICL CHRCTERISTICS TURN-OFF SWITCHING Symbol Parameter Test conditions Min Typ Max Unit t rr Reverse recovery time Tj = 25 C IF = 0.5 IR = 1 Irr = 0.25 IF =1 dif/dt =-50/µs R= ns I RM Maximum reverse recovery current Tj = 125 C R = 400 I F =5 dif/dt = -40 /µs dif/dt = -500 /µs S factor Softness factor Tj = 125 C R = 400 I F =5 dif/dt = -500 /µs TURN-ON SWITCHING Symbol Parameter Test conditions Min Typ Max Unit tfr Forward recovery time Tj=25 C IF =5, dif/dt = 40 /µs measured at 1.1 F max 500 ns Fp Peak forward voltage Tj=25 C IF =5, dif/dt = 40 /µs 10 2/10

3 Fig. 1: Switching OFF losses versus di/dt P3(W) Tj=125 C F = 10kHz R=600 dif/dt(/µs) Fig. 2: Forward voltage drop versus forward current FM() MXIMUM LUES Tj=125 o C IFM() Fig. 3: Peak reverse recovery current versus dif/dt. IRM() % CONFIDENCE Tj=125 o C R=400 IF=10 IF=2.5 IF= dif/dt(/ s) Fig. 4: Reverse recovery time versus dif/dt. 180 trr(ns) IF=2.5 90% CONFIDENCE Tj=125 o C IF=5 R=400 IF=10 20 dif/dt(/ s) Fig. 5: Softness factor (tb/ta) versus di F /dt. Fig. 6: Relative variation of dynamic parameters versus junction temperature(reference Tj = 125 C). 2.0 S factor Typical values Tj=125 o C dif/dt(/ s) IF<2xIF(av) R= S factor IRM 0.6 Tj(oC) /10

4 Fig. 7: Transient peak forward voltage versus dif/ft FP() 90% CONFIDENCE Tj=125 o C IF=IF(av) dif/dt(/ s) Fig. 8: Forward recovery time versus dif/dt. tfr(ns) % CONFIDENCE Tj= o C Fr=1.1*F max. 400 IF=IF(av) dif/dt(/ s) Fig. 9: Relative cariation of thermal transient impedance junction to case versus pulse duration (TO-220C and DPK). Fig. 10: Relative cariation of thermal transient impedance junction to case versus pulse duration (). 4/10

5 PPLICTION DT The TURBOSWITCH is especially designed to provide the lowest overall power losses in any FREEWHEEL Mode application (Fig.) considering both the diode and the companion transistor, thus optimizing the overall performance in the end application. The way of calculating the power losses is given below: TOTL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 Watts CONDUCTION LOSSES in the diode REERSE LOSSES in the diode SWITCHING LOSSES in the diode SWITCHING LOSSES in the transistor due to the diode Fig. : FREEWHEEL MODE SWITCHING TRNSISTOR DIODE: TURBOSWITCH IL R t T F=1/T =t/t LOD 5/10

6 PPLICTION DT (Cont d) Fig. B : STTIC CHRCTERISTICS I Conduction losses : P1 = t0.if() +Rd.IF 2 (RMS) I F Rd R I R to F Reverse losses: P2 = R.IR.(1-δ) Fig. C : TURN-OFF CHRCTERISTICS IL Turn-on losses : (in the transistor, due to the diode) I TRNSISTOR t P5 = R I RM 2 ( S ) F 6 x dif dt + R I RM I L ( S + 2 ) F 2 x di F dt Turn-off losses (in the diode) : I di F/dt DIODE P3 = R I RM 2 S F 6 xdi F dt I RM ta tb di R/dt t P3 and P5 are suitable for power MOSFET and IGBT R trr = ta + tb S = tb / ta I di F /dt = R /L RECTIFIER OPERTION I RM ta tb di R/dt t R trr = ta + tb S = tb/ta 6/10

7 PPLICTION DT (Cont d) Fig. D : TURN-ON CHRCTERISTICS I F di F /dt I Fmax Turn-on losses : P4 = 0.4 ( FP - F ).I Fmax.t fr.f 0 t Fp F 1.1 F F 0 t tfr 7/10

8 PCKGE MECHNICL DT DPK DIMENSIONS REF. Millimeters Inches Min. Max Min. Max B B C C D E G H L typ typ. L FOOTPRINT DIMENSIONS (in millimeters) 6.7 Cooling method : by conduction(c) /10

9 Diam STT506D/F/B PCKGE MECHNICL DT H B REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max B L6 D L2 L3 L7 E F F F1 G H L typ typ. L L F D E L G Diam Cooling method : by conduction(c) Recommanded torque value : 0.55m.N Maximum torque value : 0.7m.N 9/10

10 PCKGE MECHNICL DT TO-220C DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. H2 ØI L5 C L C D E F L2 L6 F G L9 F1 L4 D H L typ typ. L F M E L L G L L M 2.6 typ typ. Diam. I Cooling method : by conduction(c) Recommanded torque value : 0.55m.N Maximum torque value : 0.7m.N Ordering type Marking Package Weight Base qty Delivery mode STT506D STT506D TO-220C 1.86g 50 Tube STT506F STT506F 2g 50 Tube STT506B STT506B DPK 0.3g 75 Tube STT506B-TR STT506B DPK 0.3g 2500 Tape & reel Epoxy meets UL94,0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - ll rights reserved. STMicroelectronics GROUP OF COMPNIES ustralia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S /10