30BQ100PbF SCHOTTKY RECTIFIER. 3 Amp. I F(AV) = 3.0Amp V R = 100V. Bulletin PD rev. C 01/07. Major Ratings and Characteristics
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1 30BQ00PbF SCHOTTKY RECTIFIER 3 Amp I F(AV) = 3.0Amp V R = 00V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 3.0 A waveform V RRM 00 V I t p = 5 μs sine 800 A V 3.0 Apk, T = 25 C 0.62 V T range - 55 to 75 C Description/ Features The 30BQ00PbF surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection. Small foot print, surface mountable Very low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Lead-Free ("PbF" suffix) Case Styles SMC
2 30BQ00PbF Voltage Ratings Part number 30BQ00PbF V R Max. DC Reverse Voltage (V) 00 V RWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters 30BQ Units Conditions I F(AV) Max. Average Forward Current 3.0 A 50% duty T L = 48 C, rectangular wave form % duty T L = 38 C, rectangular wave form I FSM Max. Peak One Cycle Non-Repetitive 800 A 5μs Sine or 3μs Rect. pulse Surge Current 70 0ms Sine or 6ms Rect. pulse Following any rated load condition and with rated V RRM applied E AS Non Repetitive Avalanche Energy 3.0 m T = 25 C, I AS =.0A, L = 6mH I AR Repetitive Avalanche Current 0.5 A Current decaying linearly to zero in μsec Frequency limited by T max. Va =.5 x Vr typical Electrical Specifications Parameters 30BQ Units Conditions V FM Max. Forward Voltage Drop () A A A A I RM Max. Reverse Leakage Current () 0.5 ma T = 25 C T = 25 C T = 25 C V R = rated V R 5.0 ma T = 25 C C T Max. unction Capacitance 5 pf V R = 5V DC (test signal range 00KHz to Mhz) 25 C L S Typical Series Inductance 3.0 nh Measured lead to lead 5mm from package body dv/dt Max. Voltage Rate of Change 0000 V/μs (Rated V R ) () Pulse Width < 300μs, Duty Cycle < 2% Thermal-Mechanical Specifications Parameters 30BQ Units Conditions T Max. unction Temperature Range (*) - 55 to 75 C T stg Max. Storage Temperature Range - 55 to 75 C R thl Max. Thermal Resistance 2 C/W DC operation unction to Lead (**) R tha Max. Thermal Resistance 46 C/W DC operation unction to Ambient wt Approximate Weight 0.24 (0.008) g (oz.) Case Style SMC Similar to DO-24AB Device Marking IR3 (*) dptot < thermal runaway condition for a diode on its own heatsink dtj Rth( j-a) (**) Mounted inch square PCB 2
3 30BQ00PbF Instantaneous Forward Current - I F 0 T = 75 C T = 25 C T = 25 C Reverse Current - I R (ma) unction Capacitance - C T (p F) Reverse Voltage - V R (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage (Per Leg) T = 75 C 50 C 25 C 00 C 75 C 50 C 25 C T = 25 C Forward Voltage Drop - V FM (V) Fig. - Max. Forward Voltage Drop Characteristics (Per Leg) Reverse Voltage - V R (V) Fig. 3 - Typical unction Capacitance Vs. Reverse Voltage (Per Leg) ( C/W) thc Thermal Impedance Z 0 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 P DM Notes: Single Pulse. Duty factor D = t/ t2. (Thermal Resistance) 2. Peak Tj = Pdm x ZthC + Tc t, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thc Characteristics (Per Leg) t t 2 3
4 30BQ00PbF Allowable Lead Temperature ( C) DC Square wave (D = 0.50) 80% Rated Vr applied see note (2) D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 Average Power Loss (Watts) D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 RMS Limit DC Average Forward Current - I F(AV) Fig. 4 - Maximum Average Forward Current Vs. Allowable Lead Temperature Average Forward Current - I F(AV) Fig. 5 - Maximum Average Forward Dissipation Vs. Average Forward Current Non-Repetitive Surge Current - I FSM At Any Rated Load Condition And With Rated Vrrm Applied Following Surge Square Wave Pulse Duration - T p (Microsec) Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration (2) Formula used: T C = T - (Pd + Pd REV ) x R thc ; Pd = Forward Power Loss = I F(AV) x V (I F(AV) / D) (see Fig. 6); Pd REV = Inverse Power Loss = V R x I R ( - D); I V R = 80% rated V R 4
5 30BQ00PbF Outline Table Device Marking: IR (.08) 3.5 (.24) 5.59 (.220) 6.22 (.245) CATHODE ANODE 2.00 (.079) 2.62 (.03) 6.60 (.260) 7. (.280).52 (.006).305 (.02) 2 POLARITY 2 PART NUMBER 0.76 (.030).52 (.060) 7.75 (.305) 8.3 (.320).02 (.004).203 (.008) Outline SMC Dimensions in millimeters and (inches) For recommended footprint and soldering techniques refer to application note #AN-994 Marking & Identification Each device has 2 rows for identification. The first row designates the device as manufactured by International Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID. IR3 VOLTAGE CURRENT IR LOGO PYWWX SITE ID WEEK 2nd digit of the YEAR "Y" = st digit of the YEAR "standard product" "P" = "Lead-Free" 5
6 30BQ00PbF Tape & Reel Information Dimensions in millimetres and (inches) 30BQ00 ******************************************** * SPICE Model Diode * ********************************************.SUBCKT 30BQ00 ANO CAT D ANO CAT *Define diode model.model DMOD D (IS=00N, N=.3478, BV=20, RS= M, CO=58.574P, V=3.6795, M= M, EG=., XTI=2, RL= MEG). ******************************************************************************.ENDS 30BQ00 Thermal Model Subcircuit.SUBCKT 30BQ00 5 CTHERM E-0 CTHERM E+0 CTHERM E+02 CTHERM E+03 RTHERM E+00 RTHERM E+00 RTHERM E+00 RTHERM E-0.ENDS 30BQ00 6
7 30BQ00PbF Ordering Information Table Device Code 30 B Q 00 TR PbF Current Rating 2 - B = Single Lead Diode 3 - Q = Schottky Q Series 4 - Voltage Rating (00 = 00V) 5 - none= Box (000 pieces) TR = Tape & Reel (3000 pieces) 6 - none= Standard Production PbF = Lead-Free Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (30) TAC Fax: (30) Visit us at for sales contact information. 0/07 7
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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
BZW50. Transil, transient voltage surge suppressor (TVS) Features. Description
Transil, transient voltage surge suppressor (TVS) Datasheet production data Features Peak pulse power: 5000 W (10/0 µs) Stand-off voltage range from 10 V to 180 V Unidirectional and bidirectional types
@V GE = 15V, I C = 28A Latest technology IGBT design offers tighter parameter distribution coupled with exceptional n-channel reliability
PD - 97 INSULATED GATE BIPOLAR TRANSISTOR IRG4PF5W Features C Optimized for use in Welding and Switch-Mode Power Supply applications V CES = 9V Industry benchmark switching losses improve efficiency of
NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features
NTMS9N Power MOSFET 3 V, 7 A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices
5STP 21H4200 Old part no. TV 989-2100-42
Phase Control Thyristor Properties 5STP 1H Old part no. T 989-1- Key Parameters High operational capability DRM, RRM = Possibility of serial and parallel connection I TAm = 19 A Applications I TSM = 3
P6KE. Transil, transient voltage surge suppressor (TVS) Features. Description. Complies with the following standards
Transil, transient voltage surge suppressor (TVS) Datasheet production data Features Peak pulse power: 600 W (10/0 µs ) Stand-off voltage range 6.8 to 440 V Unidirectional and bidirectional types Low clamping
W/ C V GS Gate-to-Source Voltage ± 16 dv/dt Peak Diode Recovery e 21
PD 97369 IRLB43PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated
AUIRLR2905 AUIRLU2905
Features dvanced Planar Technology Logic Level Gate Drive Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free,
Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
SMPS MOSFET. V DSS R DS (on) max I D
Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 93773A IRF820A HEXFET Power MOSFET V DSS R DS (on) max I D 500V 3.0Ω 2.5A Benefits
1SMB59xxBT3G Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators
9xxBTG Series, SZ9xxTG Series Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of W Zener diodes offers the following advantages. Features Zener Voltage Range. V to V ESD Rating
5STP 06T1600 Old part no. T 906C-640-16
Phase Control Thyristor Properties 5STP T1 Old part no. T 9C--1 Key Parameters High operational capability V DRM, V RRM = 1 V Possibility of serial and parallel connection I TAVm = 1 A Applications I TSM
STTH1R04-Y. Automotive ultrafast recovery diode. Features. Description
Automotive ultrafast recovery diode Features Datasheet - production data K SMA STTH1R4AY Table 1. Device summary Symbol Value I F(AV) 1 A V RRM 4 V T j (max) 175 C V F (typ) t rr (typ) A K.9 V 14 ns A
V DS 100 V R DS(ON) typ. @ 10V 72.5 m: Q g typ. 15 nc Q sw typ. 8.3 nc R G(int) typ. 2.2 Ω T J max 175 C
PD 9698A DIGITAL AUDIO MOSFET IRFB422PbF Features Key parameters optimized for ClassD audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency
Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit. f = 50 Hz, t p = 10 ms, T vj = 0 160 C f = 5 Hz, t p = 10 ms,
V RSM = 2800 V Rectifier Diode I F(AV)M = 6830 A I F(RMS) = 10730 A I FSM = 87 10 3 A V F0 = 0.8 V r F = 0.05 mw 5SDD 60N2800 Patented free-floating silicon technology Very low on-state losses Optimum
SMPS MOSFET. V DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 92004 IRF740A HEXFET Power MOSFET V DSS Rds(on) max I D 400V 0.55Ω A Benefits
Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
Green. Part Number Qualification Case Packaging B1X0Q-13-F Automotive SMA 5,000/Tape & Reel B1X0BQ-13-F Automotive SMB 3,000/Tape & Reel
reen 1.0A SURFAE MOUNT SHOTTKY BARRIER RETIFIER Product Summary B120Q/BQ-B140Q/BQ V RRM (V) I O (A) V F Max (V) I R Max (ma) T A = +25 T A = +25 20/30/40 1.0 0.5 0.5 B150Q/BQ, B160Q/BQ V F Max (V) I R
IRFP460LC PD - 9.1232. HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.27Ω I D = 20A
HEXFET Power MOSFET PD - 9.232 IRFP460LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive
5STP 30T1800 Old part no. T 989C-3030-18
Phase Control Thyristor Properties 5STP 3T18 Old part no. T 989C-33-18 Key Parameters High operational capability V DRM, V RRM = 1 8 V Possibility of serial and parallel connection I TAVm = 3 18 A Applications
MMSZxxxT1G Series, SZMMSZxxxT1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZxxxTG Series, SZMMSZxxxTG Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
C106 Series. Sensitive Gate Silicon Controlled Rectifiers
C6 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control;
91 P D @T C = 25 C Power Dissipation 330 P D @T C = 100 C Power Dissipation Linear Derating Factor
PD - 9778 IRFB4229PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation in PDP
STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET
STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP10NK60Z STP10NK60ZFP STB10NK60Z STB10NK60Z-1
STIEC45-xxAS, STIEC45-xxACS
Transil TVS for IEC 61000-4-5 compliance Datasheet - production data differential mode MIL STD 883G, method 3015-7 Class 3B 25 kv HBM (human body model) Resin meets UL 94, V0 MIL-STD-750, method 2026 solderability
STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET
N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
NSI45060JDT4G. Adjustable Constant Current Regulator & LED Driver. 45 V, 60 100 ma 15%, 2.7 W Package
NSI5JDTG Adjustable Constant Current Regulator & Driver 5 V, ma 5%, 2.7 W Package The adjustable constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost effective