CUSTOM MODULES (Commercial / Moisture Resistant / Hermetic)
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- Douglas Sharp
- 10 years ago
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1 TO O (ommercial / oisture esistant / ermetic) apabilities: ustomers looking for application specific custom power modules can benefit from owerex s years of experience in chip manufacturing and design / engineering. owerex custom power modules employ performance proven features. oldered-down and wire bonding fabrication and compression bonded encapsulation () of / iode elements offer increased switching speeds, lower losses, more efficient cooling and higher power handling capabilities. eliability / ualification Testing: eliability and qualification testing can be performed in accordance to military specificatio, including roup, and and specific customer requirements. eatures: xtended Temperature ange, - to oisture esistance ermetic ifferent ircuit onfiguratio (i.e. ommon mitter, hopper) igh oltage Isolation ow odule Weight arger ree-wheel iodes ackage eight, Width and ength Integrated eatsinks oth ir and iquid ooled by liminating the aseplate Over-current hutdown Temperature and urrent ee ifferent Termination tyles (i.e. Thicker us ars, -sub onnectors, ress On i, etc.) ubstrates: lumina luminum itride eo I ackages: icture rame tandard IT ases ustom ackage evelopment for oth lastic and ermetic ackages ie Technology: IT ipolar OT iode iode i OT TO i iode IT T O OTT umbering ystem... - roduct Overview... - ustom IT... - ustom OT... - ustom ast iode... - Outline rawings... - OT: TO, T: TO ustom IT ssemblies ssemblies ast ecovery iode Thyristor & iode iscrete ectifiers iscrete Thyristors i
2 - roduct Overview umbering ystem is a, ustom ingle ast iode odule / T OITIO I I () () () () () () () / OO ITT I8 I I I I I is a, ustom IT ual odule erial esignation (T) TO IT O OW I O O, OOT I I I I () I () () () () (8) (9) () erial esignation (I) I -I - T- I I I I I () roduct ine: = ustom odule () evice: = TO I = IT = OT = Traistor = ectifier T = Thyristor = ate river (ontinued on page -)
3 roduct Overview (ontinued from page -) umbering ystem TO OT TO T IO O I O I T IO () onfiguration: = -ridge (ingle-phase ridge) = ommon mitter (athode) = ouble / ual = Three-phase ull Wave = ommon node = onverter Inverter = Three-hase alf-wave = symmetrical alf-bridge = ow ide hopper = igh ide hopper = ingle T = Two Individual () oltage: = = = = = = = 8 = 8 9 = 9 to 99 X () urrent: = = = = = 8 = = = = = 8 = = = = = 8 to 99 X erial esignation T: () T = Terminal eight () 99 Terminal eight (mm) I: (8) 9 (umbered from 999 for (9) 9 each individual combination of () 9 previous digits.) ustom IT ssemblies ssemblies ast ecovery iode Thyristor & iode iscrete ectifiers iscrete Thyristors i -
4 - ustom IT, (efer to device datasheets at for test conditio.) XI TI TI TITI -W IO T TITI Type I mperes I mperes T j(x) Isolation tatic Test onditio I mperes Typ. T j = Typ. (T) ax. (T) ynamic (T) Test ond. =, f = z ies n oes n res n esistive oad witching Times t d(on) t r t d(off) t r I mperes t rr IT (ax.) th(j-c) /W iode (ax.) th(j-c) /W Weight rams Outline rawings umber age ingle ustom IT I I Typ.. Typ ual / tandard onfiguration ustom IT I 9 I ual / ommon mitter ustom IT I I I I I Typ... Typ ow ide hopper ustom IT I I 9 I ingle ustom IT ual / tandard onfiguration ustom IT ual / ommon mitter ustom IT ow ide hopper ustom IT I, I I I I I, I, I I8 I, I, I 8 8 8
5 ustom IT, (efer to device datasheets at for test conditio.) XI TI TI TITI W IO T TITI Type I mperes I T j(x) mperes Isolation tatic Test onditio I mperes Typ. T j = Typ. (T) ax. (T) ynamic (T) Test ond. =, f = z ies n oes n res n esistive oad witching Times t d(on) t r t d(off) t r I mperes t rr IT (ax.) th(j-c) /W iode (ax.) th(j-c) /W Weight rams Outline rawings umber age hopper, uck oost ustom IT odule I ridge ustom IT odule I ac Three-hase ridge I hopper, uck oost ustom IT odule I -ridge ustom IT odule I -ac Three-hase ridge I W- W- W ustom IT ssemblies ssemblies ast ecovery iode Thyristor & iode iscrete ectifiers iscrete Thyristors i -
6 - ustom OT odule, (efer to device datasheets at for test conditio.) XI TI Type I mperes T j = (Typ.) T j(x) Isolation TI TITI tatic (on) (mω) (Typ.) (in.) I (µ) (ax.) (ax.) g (n) (Typ.) T TITI OT (Typ.) th(j-c) /W odule (ax.) th(c-f) /W Weight rams Outline rawings umber age ingle ustom OT odule ingle ustom OT odule ustom ast iode, (efer to device datasheets at for test conditio.) Type ( = + ) I (av) /T mperes/ (8 sin) I mperes (8.ms, Tj(max), % eapplied) OT I i t sec (8.ms, Tj(max), % eapplied) /I /mperes (Tj = ) t rr t rr at If mperes Outline di/dt th(j-c) th(c-s) T j(max) rawings mperes/µs /W /W Weight umber age ingle ast iode / 9,. / / 8,. / / / 9. / ingle ast iode,,,
7 I I I, I, I, ( ) T W ( ) ( ) T T Y ( ) Z ( ) ( ) ( ) ( ) X Z W X Y ±.. ±.. ±.. ±.. ±.. ± ±. ±.. ±..9 ±. etric. ad.. ad.. ad.. ad.. in.. in.. ia..8 ia.. ±.. ± ±.. ± T.9 ±.. ±..8 ±.. ±.. ia.. ia. W. ±..9±. X. ±..8 ±. Y. ±. ia.. ±. ia. Z etric T W.9. X.. Y.. Z.9.. ia.. ia etric ustom IT ssemblies ssemblies ast ecovery iode Thyristor & iode iscrete ectifiers iscrete Thyristors i -
8 -8 I8, I, I I, I I, T OIT T ( TY.) I () () () () ( TY.) ( TY.) # T ( TY.) () () () (). 9..±. 8.± ax.. ax ia.. ia... etric / /-..±. 9.±..88±. 8.± etric T. ia.. ia ax..8 ax ia.. ia.
9 8 9, I, I W ( TY.) ( TY.) T ( TY.) I () () () W () ( TY.) () () () X (8 ) ()...±. 9.±....89±. 8.±.. ax. ax ia.. ia. W etric / /-..±..±..9±..± T. ia.. ia W.. X..8 ustom IT ssemblies ssemblies ast ecovery iode Thyristor & iode iscrete ectifiers iscrete Thyristors i -9
10 - I I 8 (TY) 8 W T W (TY) T (WI T) T (TY) () (TY) (TY) (TY) (TY) X W Y ±. ± ia.. ia. ousing Types (..T. fg. o. td.) T /-..+./-. W.9. X. Y ±..±..±..± ±..± etric T. in.. in.. x..8 x..8 ia.. ia.
0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) Features 0.603 (15.32) 0.573 (14.55) 0.104 (2.64) 0.094 (2.39)
*.6 (4.6).9 (2.28).25 (5.2).9 (4.83).45 (.54) Max..4 (.4).35 (8.89).54 (3.9).42 (3.6) ia. PIN S.48 (29.6).8 (28.4) * May be notched or flat.3 (2.87).2 (2.56).635 (6.3).58 (4.73).37 (.94).26 (.66).5 (2.67).95
AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD 9399A AUTOMOTIVE MOSFET Typical Applications Electric Power Steering (EPS) Antilock Braking System (ABS) Wiper Control Climate Control Power Door Benefits Advanced Process Technology Ultra Low OnResistance
Table of Contents Introduction... 2 Amphenol MIL-DTL-5015 and MIL-5015 Type Standard Cylindrical Connectors General Information, Class
able of ontents age Introduction...................................... 2 mphenol I--5015 and I-5015 ype tandard ylindrical onnectors eneral Information, lass esignations............................. 3
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD - 9569 NSULTED GTE BPOLR TRNSSTOR RG4B30UPbF UltraFast Speed GBT Features UltraFast: optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 GBT design
HG SERIES REED RELAYS HGRM HGR2M HGR2MT HGSR HGSM HGJM HGJ2MT HGWR HGWM HGW2MT HG HGM
HG ERIE REED RELAY DERIPTION The HGRM is available in single side and bistable adjustments for all types of industrial as well as classic telecom and datacom applications. A potted relay body with a metal
HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω
P - 93757 IRLML2502 HEXFET Power MOSFET Utra Low On-Resistance N-hanne MOSFET SOT-23 Footprint Low Profie (
Amphenol. Amphenol 97 Series Standard Cylindrical Connector. MIL-5015 Style Connectors widely used for: 12-022-14
mphenol 97 eries tandard ylindrical onnector 12-022-14 I-5015 tyle onnectors widely used for: actory utomation, obotics achine Tool, Instrumentation Welding quipment edical quipment mphenol 97 eries onnectors
AUTOMOTIVE GRADE. Orderable Part Number AUIRF7805Q SO-8 Tape and Reel 4000 AUIRF7805QTR
UTOMOTIVE GRE UIRF7805Q Features dvanced Planar Technology Low On-Resistance Logic Level N Channel MOSFET Surface Mount vailable in Tape & Reel 150 C Operating Temperature Lead-Free, RoHS Compliant utomotive
Amphenol. Amphenol 97 Series Standard Cylindrical Connector. MIL-5015 Style Connectors widely used for: 12-022-15
mphenol 97 eries tandard ylindrical onnector 12-022-15 I-5015 tyle onnectors widely used for: actory utomation, obotics achine Tool, Instrumentation Welding quipment edical quipment mphenol 97 eries onnectors
KF-Modulecarrier taylor made for DCS. Triconex + -
OE UTOTIO OE UTOTIO KF-odulecarrier taylor made for Triconex X0. X0. X0. Y X0. X0. X0.0 0 0 X0. X0. X0. X0. X0. X0. X0. X0. X0. 0 -U-0 00 00 0 EE+FUH 0 annheim 0 K FF FF + - X0 larm + - Table of contents
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
FQP8N80C/FQPF8N80C/FQPF8N80CYTU 800V N-Channel MOFET General escription These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, MO technology.
A I DM. -55 to + 175 T STG. Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw
IGITL UIO MOSFET P 9673 IRFB565PbF Features Key Parameters Optimized for Class udio mplifier pplications Low R SON for Improved Efficiency Low Q G and Q SW for Better TH and Improved Efficiency Low Q RR
IRFB3607PbF IRFS3607PbF IRFSL3607PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
FLC21-135A LOW POWER FIRE LIGHTER CIRCUIT. Application Specific Discretes A.S.D.
Application Specific iscretes A.S.. LC21-135A LOW POWER IRE LIGHTER CIRCUIT EATURES EICATE THYRISTOR STRUCTURE OR CAPACITIVE ISCHARGE IGNITION OPERATION HIGH PULSE CURRENT CAPABILITY I RM =90A @ tp=10µs
CMOS 5 V/+5 V 4 Single SPDT Switches ADG619/ADG620
a FEATURE (Max) On Resistance. (Max) On Resistance Flatness.7 V to 5.5 ingle upply.7 V to 5.5 V ual upply Rail-to-Rail Operation -Lead OT-3 Package, -Lead MOP Package Typical Power Consumption (
P-Channel 12 V (D-S) MOSFET
New Product SiEH P-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) a Q g (Typ.) G -. at V GS = -.5 V -.6 at V GS = -.5 V -.7 at V GS = -.8 V -. at V GS = -.5 V - SOT-6 SC-7 (6-LEAS) Top
V DS 100 V R DS(ON) typ. @ 10V 72.5 m: Q g typ. 15 nc Q sw typ. 8.3 nc R G(int) typ. 2.2 Ω T J max 175 C
PD 9698A DIGITAL AUDIO MOSFET IRFB422PbF Features Key parameters optimized for ClassD audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency
IRFP460LC PD - 9.1232. HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.27Ω I D = 20A
HEXFET Power MOSFET PD - 9.232 IRFP460LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive
AUIRFR8405 AUIRFU8405
Features Advanced Process Technology New Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
IRFB3004PbF IRFS3004PbF IRFSL3004PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
FDD5N50F N-Channel MOSFET, FRFET 500V, 3.5A, 1.55Ω Features
F5N50F N-Channel MOFET, FRFET 500V, 3.5A,.55Ω Features R (on) =.25Ω ( Typ.)@ V G = 0V, I =.75A Low gate charge ( Typ. nc) Low C rss ( Typ. 5pF) Fast switching 00% avalanche tested Improved dv/dt capability
Audio Jack Detection and Configuration, MIC / GND Cross Point Switch
FS8049 udio Jack Detection and onfiguration, MI / GND ross Point Switch Features Detection V DD THD (MI) ESD (IE 61000-4-2) (ir Gap) udio Plug GND & MI Polarity 2.5 to 4.4 V 0.002% Typical 15 kv Operating
C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
5STP 06T1600 Old part no. T 906C-640-16
Phase Control Thyristor Properties 5STP T1 Old part no. T 9C--1 Key Parameters High operational capability V DRM, V RRM = 1 V Possibility of serial and parallel connection I TAVm = 1 A Applications I TSM
Air Cylinder. Series NCA1 NFPA Interchangeable
N4- ir ylinder Series N N Interchangeable Medium uty.5 to 4 ore ifferent N Mounting Options Non-otating Option Tandem ylinder Option uto Switch apable ir ylinder N Interchangable Series N Improved cushion
5SNA 3600E170300 HiPak IGBT Module
Data Sheet, Doc. No. 5SYA 44-6 2-24 5SNA 36E73 HiPak IGBT Module VCE = 7 V IC = 36 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling
TO-220AB contribute to its wide acceptance throughout the industry.
l LogicLevel Gate rive l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
3000W Single Output Power Supply
SPECIFICATION MODEL OUTPUT INPUT POTECTION DC OLTAGE ATED CUENT CUENT ANGE ATED POWE OLTAGE ADJ. ANGE LINE EGULATION LOAD EGULATION SETUP, ISE TIME HOLD UP TIME (Typ.) OLTAGE ANGE FEQUENCY ANGE EFFICIENCY
3000W Single Output Power Supply
SP-3000 s eries SPECIFICATION MODEL OUTPUT INPUT POTECTION OTHES NOTE DC OLTAGE ATED CUENT CUENT ANGE ATED POWE OLTAGE ADJ. ANGE LINE EGULATION LOAD EGULATION SETUP, ISE TIME HOLD UP TIME (Typ.) OLTAGE
Amphenol Miniature Cylindrical Connectors 12-070-15. Meets MIL-C-26482, Series 1 Specifications. Amphenol
mphenol iniature ylindrical onnectors 12-070-15 eets I--26482, eries 1 pecifications mphenol Table of ontents age o. Introduction, mphenol iniature ylindrical eneral Information, esign lexibility...................1,
SEMICONDUCTOR TECHNICAL DATA
EIODUTO TEHIAL DATA Order this document by PX2700/D The PX2700 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output directly proportional to the
2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
November 995 N7 / N7 / NS7A N-Channel Enhancement Mode Field Effect Transistor General escription Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary,
Chapter 2. Technical Terms and Characteristics
Chapter 2 Technical Terms and Characteristics CONTENTS Page 1 IGBT terms 2-2 2 IGBT characteristics 2-5 This section explains relevant technical terms and characteristics of IGBT modules. 2-1 1 IGBT terms
5STP 21H4200 Old part no. TV 989-2100-42
Phase Control Thyristor Properties 5STP 1H Old part no. T 989-1- Key Parameters High operational capability DRM, RRM = Possibility of serial and parallel connection I TAm = 19 A Applications I TSM = 3
AUTOMOTIVE GRADE. Base part number Package Type Standard Pack Orderable Part Number
UTOMOTVE GRDE URG4P40S-E nsulated Gate Bipolar Transistor Features V ES = 600V Standard: Optimized for minimum saturation voltage and low operating frequencies ( < khz) Generation 4 GBT design provides
Features S 1. TA=25 o C unless otherwise noted. (Note 1b) 0.8
FC54P V P-Channel Logic Level PowerTrench MOSFET February 22 FC54P General escription This V P-Channel MOSFET uses Fairchild s high voltage PowerTrench process. It has been optimized for power management
D D D G S. E AS Single Pulse Avalanche Energy (Note 4) 337 mj Power Dissipation (Note 1a) 2.5 P D Power Dissipation (Note 1b) 1.
F883NZ N-Channel PowerTrench MOFET 3V, 8.5A, 4.5mΩ Features Max r (on) = 4.5mΩ at V G = V, I = 8.5A Max r (on) = 6.mΩ at V G = 4.5V, I =6A HBM E protection level of 5.6KV typical (note 3) High performance
Low-Power, High-Speed CMOS Analog Switches
Low-Power, High-peed MO Analog es G1/3/ -V upply Max Rating 1-V Analog ignal Range On-Resistance r (on) : Low Leakage I (on) : pa Fast ing t ON : ns Ultra Low Power Requirements P :.3 W TTL, MO ompatible
W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.0. V/ns T J. mj I AR. Thermal Resistance Symbol Parameter Typ. Max.
PD 9727 IRFP326PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
5STP 30T1800 Old part no. T 989C-3030-18
Phase Control Thyristor Properties 5STP 3T18 Old part no. T 989C-33-18 Key Parameters High operational capability V DRM, V RRM = 1 8 V Possibility of serial and parallel connection I TAVm = 3 18 A Applications
V DSS R DS(on) max Qg. 30V 3.2mΩ 36nC
PD - 96232 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
Amphenol JT/LJT Subminiature Cylindrical Connectors. Amphenol JT Connectors MIL-DTL-38999 Series II Crimp and MIL-C-27599 Series II Solder
mphenol J/J ubminiature ylindrical onnectors 2-090-8 mphenol J onnectors I--38999 eries II rimp and I--27599 eries II older mphenol J onnectors I--38999 eries I rimp and I--27599 eries I older mphenol
CoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rated Product
IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
IRF7303 PD - 9.1239D. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.050Ω SO-8. Absolute Maximum Ratings. Thermal Resistance Ratings.
l Generation V Technology l Ultra Low On-Resistance l ual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching escription Fifth Generation HEXFETs from International
W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 38. V/ns T J. mj I AR
PD 967 IRFB465PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S V DSS HEXFET
W/ C V GS Gate-to-Source Voltage ± 16 dv/dt Peak Diode Recovery e 21
PD 97369 IRLB43PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
High Efficiency Thyristor
LE2HB High Efficiency hyristor 2 M.4 Single hyristor Part number LE2HB Backside: anode 2 Features / dvantages: pplications: Package: O-247 hyristor for line frequency Planar passivated chip Long-term stability
19TQ015PbF. 19 Amp SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 19Amp V R = 15V. Bulletin PD-20840 rev. B 04/06. Major Ratings and Characteristics
Bulletin PD-0840 rev. B 04/06 9TQ05PbF SCHOTTKY ECTIFIE 9 Amp I F(A) = 9Amp = 5 Major atings and Characteristics Characteristics alues Units I F(A) ectangular 9 A waveform M 5 I FSM @ tp = 5 μs sine 700
FDS6679AZ P-Channel PowerTrench MOSFET -30V, -13A, 9mΩ General Description
FS6679AZ P-Channel PowerTrench MOSFET -3V, -3A, 9mΩ General escription This P-Channel MOSFET is producted using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored
TISP4500H3BJ Overvoltage Protector
*RoHS COMPLINT TISP4500H3BJ BIDIRECTIONL THYRISTOR OVERVOLTGE PROTECTORS TISP4500H3BJ Overvoltage Protector Non-Conductive During K.20/21/45 Power Contact Test - Off-State Voltage... >245 V rms - For Controlled
POWER SWITCHES CATALOG
P ATALG U P 8100 hurchill Ave., Leeds, Alabama 35094 Telephone (205) 699-0840 Facsimile (205) 699-0858 www.uscopower.com [email protected] www.hubbellpowersystems.com NT: ecause ubbell has
Amphenol. Amphenol 97 Series Standard Cylindrical Connector. MIL-5015 Style Connectors widely used for: 12-022-14
mphenol 97 eries tandard ylindrical onnector 12-022-14-5015 tyle onnectors widely used for: actory utomation, obotics achine Tool, nstrumentation Welding quipment edical quipment mphenol 97 eries onnectors
IRFP054N. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.012Ω I D = 81A
l l l l l dvanced Process Technology ynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
5SDD 92Z0401. Housingless Welding Diode. I FAVm = 9 244 A I FSM = 60 000 A V TO = 0.780 V Applications r T = 0.031 m. Types.
SDD 92Z41 Housingless Welding Diode Properties SDD 92Z41 Key Parameters High forward current capability V RRM = 4 V Low forward and reverse recovery losses I FAVm = 9 244 A I FSM = 6 A V TO =.78 V Applications
ISDN SIGNALLING MODULE SINGLE E1/T1
IDN IGNALLING ODUL INGL 1/T1 NODO IDN IGNALLING ODUL INGL 1/T1 (I INGL) is designed for signalling over a single Primary Rate Interface (PRI) of public or private Integrated ervices Digital Networks (IDN)
A I DM Pulsed Drain Current -15 P D @T C = 25 C Power Dissipation 2.5
l Adavanced Process Technology l Ultra Low OnResistance l PChannel MOFET l urface Mount l Available in Tape & Reel l ynamic dv/dt Rating l Fast witching escription Fourth Generation HEXFETs from International
The CyberPower Story. A History of Firsts. Global Distribution 1.877.297.6937 UPS SYSTEMS
UPS SYSTS UPS SYSTS The yberpower Story The growth of yberpower Systems is attributable to a strategic plan that engages our own award-winning international research and development team in the design
Power MOSFET Basics By Vrej Barkhordarian, International Rectifier, El Segundo, Ca.
Power MOFET Basics By Vrej Barkhordarian, International Rectifier, El egundo, Ca. Breakdown Voltage... On-resistance... Transconductance... Threshold Voltage... iode Forward Voltage... Power issipation...
V DSS I D. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 973B IRFB432PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low
Welcome. to the Inventory Management Manual. How to Use This Guide. Contents. Index. Modules
Welcome to the nventory anagement anual How to se his Guide ontents ndex odules How to se his Guide Go to the How to se his Guide page (this page)....ext on page... Go to the ontents. Go to the previous
AUIRLR2905 AUIRLU2905
Features dvanced Planar Technology Logic Level Gate Drive Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free,
N-Channel 80-V (D-S) MOSFET
Si785P N-Channel 80-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) 80 8 7 6 0.065 at V GS = 0 V.5 0.0 at V GS = 6 V 0.9 PowerPAK SO-8 5 S 6.5 mm 5.5 mm Ordering Information: Bottom View S S 3 G
SPW32N50C3. Cool MOS Power Transistor V DS @ T jmax 560 V
SPW3N5C3 Cool MOS Power Transistor V DS @ T jmax 56 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances
CMOS 5 V/5 V 4 Dual SPST Switches ADG621/ADG622/ADG623
a FEATURE 5.5 (Max) On Resistance.9 (Max) On-Resistance Flatness 2.7 V to 5.5 ingle upply 2.7 V to 5.5 V ual upply Rail-to-Rail Operation 1-Lead OIC Package Typical Power Consumption (
N-Channel 30-V (D-S) MOSFET
Si3456V N-Channel 3-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) d Q g (Typ.) 3.4 at V GS = V 6.3.5 at V GS = 4.5 V 5.7 TSOP-6 Top View.8 nc FEATURES Halogen-free According to IEC 649-- efinition
1 pc Charge Injection, 100 pa Leakage CMOS 5 V/5 V/3 V 4-Channel Multiplexer ADG604
a FEATURES 1 pc Charge Injection (Over the Full Signal Range) 2.7 V to 5.5 V ual Supply 2.7 V to 5.5 ingle Supply Automotive Temperature Range: 4 C to +125 C 1 pa Max @ 25 C Leakage Currents 85 Typ On
= 600 V = 56 A = 2.7 V. C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 32 ns V CE(SAT) t fi(typ. Preliminary Data Sheet
HiPerFAST TM IGBT IXGR 4N6C2 ISOPLUS247 TM IXGR 4N6C2D C2-Class High Speed IGBTs (Electrically Isolated Back Surface) S = 6 V 25 = 56 A (SAT) = 2.7 V t fi(typ = 32 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D
Power Management Solutions for Xilinx and Altera FPGAs
M echnology for Innovators M An Analog roduct atalog Inside ow ropout egulators High-erformance F s... ltra-ow ropout inear egulators with oft-tart and racking... tep-own ontrollers ynchronous Buck / ontroller...
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mphenol /atrix /tandard --5015 ylindrical onnectors 12-026-4 ith rimp ear elease ontacts Qualified for nvironmental and irewall pplications mphenol his catalog covers the mphenol /atrix - -5015 amily of
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STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT
N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT Table 1: General Features STGW40NC60V 600 V < 2.5 V 50 A HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY
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Fiber Optic Interconnects
mphenol iber Optic nterconnects with --29504 ize 16 iber Optic ermini with ize 20 iber Optic ermini with iber Optic ermini 801 iber Optic onnector and ermini ybrid with iber Optic ermini and igh ontacts
STPS20L15DPbF SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 20Amp V R = 15V. Bulletin PD-20873 rev. A 02/07. Major Ratings and Characteristics
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Ultrafast Soft Recovery Diode, 60 A FRED Pt
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IRGP4068DPbF IRGP4068D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low V CE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature
IRLR8729PbF IRLU8729PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
W/ C V GS Gate-to-Source Voltage ± 30 dv/dt Peak Diode Recovery e 18.5. V/ns T J. mj I AR
PD 9675 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
Project Planning Tools. GANTT Chart. Chapter 7 Project Planning. GANTT Chart (Figure 7.3) CPM Chart (Figure 7.12) PERT Chart (Figure 7.
Project Planning ools hapter 7 Project Planning Lecture 2 Project Planning nd Management ools GN hart (Figure 7.) PM hart (Figure 7.2) P hart (Figure 7.5) GN: eveloped by Henry Gantt PM: ritical Path Method
3 k t h R e m e A c c e s s b t t t V T T c h t h p V T. Cl ic e ot rad io ut on nex o PN unnel yp e and oose e ap rop riat e PN unnel Int erfac e. 4.
C i s c o P r o f i l e C o n t a c t s & F e e d b a c k H e l p Cisc o SM B Sup p ort Assist ant Configure ASA/PIX as Easy VPN Server or Client H om e > W ork W it h M y Sec urit y D ev ic es > Cisc
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Audio. Description. Output Stage. 5k (10k) + - Out. Ref
Low-Noise, High Performance udio Preamplifier I THT 1510, 1512 TURS Low Noise: 1 nv/ Hz input noise (60d gain) 34 nv/ Hz input noise (0d gain) (1512) Low TH+N (full audio bandwidth): 0.001% 40 d gain 0.005%
Digital Integrated Circuit (IC) Layout and Design - Week 3, Lecture 5
igital Integrated Circuit (IC) Layout and esign - Week 3, Lecture 5! http://www.ee.ucr.edu/~rlake/ee134.html EE134 1 Reading and Prelab " Week 1 - Read Chapter 1 of text. " Week - Read Chapter of text.
OptiMOS 3 Power-Transistor
Type IPD6N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS
For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit.
Current Transducer HO-P series I PN = 6, 10, 25 A Ref: HO 6-P, HO 10-P, HO 25-P For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary
Tanktop Mounted Return Line Filters. BGT Series. MAX 2400 I/min - 10 bar LEIF LEIF FILTER FEATURING AN INNOVATIVE GREEN. Low pressure filters
GT Series X 2 I/min - bar N INNOVTIV GRN FITR FTURING IF IF 2 ow pressure filters GT Series Features & enefits Features bar rated filter ast aluminium head IF elements agnetic pre-filtration In-to-Out
IRL2203N. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 7.0mΩ I D = 116A
Advanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Description Advanced HEXFET Power MOSFETs from Internationa Rectifier
OptiMOS Power-Transistor Product Summary
OptiMOS Power-Transistor Product Summary V DS 55 V R DS(on),max 4) 35 mω Features Dual N-channel Logic Level - Enhancement mode AEC Q11 qualified I D 2 A PG-TDSON-8-4 MSL1 up to 26 C peak reflow 175 C
Final data. Maximum Ratings Parameter Symbol Value Unit
SPPN8C3 SPN8C3 Cool MOS Power Transistor V DS 8 V Feature R DS(on).45 Ω New revolutionary high voltage technology Ultra low gate charge I D Periodic avalanche rated Extreme dv/dt rated Ultra low effective
