5STP 21H4200 Old part no. TV

Transcription

1 Phase Control Thyristor Properties 5STP 1H Old part no. T Key Parameters High operational capability DRM, RRM = Possibility of serial and parallel connection I TAm = 19 A Applications I TSM = 3 A Controlled rectifiers TO = 1.9 AC drives r T =.191 m Types 5STP 1H 5STP 1H36 Conditions: RRM, DRM 3 6 T j = - 15 C, half sine waveform, f = 5 Hz, note 1 Mechanical Data F m Mounting force 5 ± 5 kn m Weight.93 kg D S D a Surface creepage distance Air strike distance 36 mm 15 mm Fig. 1 Case ABB s.r.o. Novodvorska 1768/138a, 1 1 Praha, Czech Republic tel.: , TS - T/1/a Jul-11 1 of 5

2 Maximum Ratings Maximum Limits Unit RRM DRM Repetitive peak reverse and off-state voltage T j = - 15 C, note 1 5STP 1H 5STP 1H RSM DSM I TRMS I TAm I TSM I t (di T /dt) cr (dv D /dt) cr Non-repetitive peak reverse and off-state voltage T j = 5 15 C RMS on-state current T c = 7 C, half sine waveform, f = 5 Hz Average on-state current T c = 7 C, half sine waveform, f = 5 Hz Peak non-repetitive surge half sine pulse, R = Limiting load integral half sine pulse, R = Critical rate of rise of on-state current I T = I TAm, half sine waveform, f = 5 Hz, D = /3 DRM, t r =.3 µs, I GT = A Critical rate of rise of off-state voltage 5STP 1H 5STP 1H36 t p = 1 ms t p = 8.3 ms t p = 1 ms t p = 8.3 ms A 19 A A A s 15 A/µs 1 /µs D = /3 DRM P GAm Maximum average gate power losses 5 W I FGM Peak gate current 1 A FGM Peak gate voltage 1 RGM Reverse peak gate voltage 1 T jmin - T jmax Operating temperature range - 15 C T stgmin - T stgmax Storage temperature range - 15 C Unless otherwise specified T j = 15 C Note 1: De-rating factor of.13% RRM or DRM per C is applicable for T j below 5 C TS - T/1/a Jul-11 of 5

3 Characteristics alue Unit min. typ. max. TM Maximum peak on-state voltage I TM = A.3 T Threshold voltage 1.9 r T I DM I RM t gd t q Q rr Slope resistance I T1 = 3 99 A, I T = A Peak off-state current D = DRM Peak reverse current R = RRM Delay time T j = 5 C, D =. DRM, I TM = I TAm, t r =.3 µs, I GT = A Turn-off time I T = A, di T /dt = 1.5 A/µs, D = /3 DRM, dv D /dt = 5 /µs Recovery charge the same conditions as at t q.191 m 3 µs 7 µs 3 µc I H Holding current T j = 5 C T j = 15 C I L Latching current T j = 5 C T j = 15 C GT Gate trigger voltage D = 1, I T = A T j = - C T j = 5 C T j = 15 C.5 3 I GT Gate trigger current D = 1, I T = A T j = - C T j = 5 C T j = 15 C Unless otherwise specified T j = 15 C Thermal Parameters alue Unit R thjc Thermal resistance junction to case double side cooling 1. K/kW anode side cooling 16. cathode side cooling 6.5 R thch Thermal resistance case to heatsink double side cooling 3. K/kW single side cooling 6. TS - T/1/a Jul-11 3 of 5

4 Transient Thermal Impedance Analytical function for transient thermal impedance Z thjc 5 i 1 R (1 exp( t / )) Conditions: F m = 5 ± 5 kn, Double side cooled i Correction for periodic waveforms 18 sine: add 1. K/kW 18 rectangular: add 1. K/kW 1 rectangular: add 1.5 K/kW 6 rectangular: add 3. K/kW i i i ( s ) R i ( K/kW ) Z thjc ( K/kW ) ,1,1,1 1 1 Square wave pulse duration t d ( s ) Fig. Dependence transient thermal impedance junction to case on square pulse IT ( A ) 1 1 T j = 5 C 15 C I TSM ( ka ) 5 5 I TSM i dt 8 7 i dt (1 6 A s) T ( ) 1 1 t ( ms ) 1 Fig. 3 Maximum on-state characteristics Fig. Surge on-state current vs. pulse length, half sine wave, single pulse, R =, T j = T jmax TS - T/1/a Jul-11 of 5

5 PT ( W ) 6 = PT ( W ) 6 = Fig. 5 On-state power loss vs. average on-state current, sine waveform, f = 5 Hz, T = 1/f Fig. 6 On-state power loss vs. average on-state current, square waveform, f = 5 Hz, T = 1/f TC ( C ) 13 1 TC ( C ) = = Fig. 7 Max. case temperature vs. aver. on-state current, sine waveform, f = 5 Hz, T = 1/f Fig. 8 Max. case temperature vs. aver. on-state current, square waveform, f = 5 Hz, T = 1/f Notes: TS - T/1/a Jul-11 5 of 5